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JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N3055 MJ2955 Datasheets Context Search

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2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2 , type voltage and current values are negative 3/7 Package mechanical data 3 2N3055 MJ2955


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
2013 - 2n3055

Abstract: mj2955 ST 2n3055
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER , e let o bs O 2/7 DocID4079 Rev 8 Value Unit 1.5 °C/W 2N3055 , MJ2955


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055 , MJ2955 50 µs dc 1 ms There are two limitations on the power handling , Region Safe Operating Area http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2013 - 2n3055 malaysia

Abstract: Mj2955
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 2N3055 , MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , : Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055 , MJ2955 , http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
1999 - 2N3055

Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , 2N3055 / MJ2955 Information furnished is believed to be accurate and reliable. However


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
1998 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case , V 70 V 1 3 V V 1.5 V 70 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm DIM , N B V E G U D R P003F 3/4 2N3055 / MJ2955 Information furnished is


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 2N3055 , MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055 , MJ2955 , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC , ) IB, Base Current (mA) Page 3 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
1999 - 2N3055

Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , 1.5 % For PNP types voltage and current values are negative. 2/4 70 2N3055 / MJ2955 TO , 1.193 A P C O N B V E G U D R P003F 3/4 2N3055 / MJ2955


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PDF 2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055 , MJ2955 500 200 300


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2n3055 motorola

Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
Text: id th < 300 ills , D uty C y c le < 2.0% . 2N3055 , MJ2955 There are two limitations on the , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR , 2N3055 MJ2955 PACKAGE DIMENSIONS NOTES; 1. DIMENSIONING AND TOLERANCING PER ANSI t l = f c l U-D , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C u n le ss o th e rw is e noted) Characteristic *OFF


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PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , /D 2N3055 , MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , Area http://onsemi.com 36 2N3055 , MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , 120 - fhfe 10 - kHz 2N3055 , MJ2955 There are two limitations on the power , Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955 , ) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D Com plem entary


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PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Rev. 4 1 Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC , Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055 , MJ2955 500 200 300 , , MJ2955 (PNP) http://onsemi.com 3 10 2N3055 , MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
1995 - Not Available

Abstract: No abstract text available
Text: . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA , derated for temperature according to Figure 1. 20 2N3055 , MJ2955 , Characteristic ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) 2N3055 MJ2955 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 V hFE , € Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N


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PDF 2N3055/D* 2N3055/D
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: BDW51C BDW52C BD435 MJE210 MJD122T4 BD336 MJD122T4 BD336 BD336 BDX33C BDX34C 2N3055 MJ2955 , MJ2955 MJE182 MJ2501 MJ2501 2N3055 MJ2955 TIP2955 MJ2955 MJ3001 MJ3001 BU326A BU326A BU931 , 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , nearest preferred 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98A BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C , NEAREST PREFERRED MJD122 BD336 MJD122 BD336 BDX33C BDX34C 2N3055 MJ2955 BD138 BD137 BD710 , MJ3001 MJ3001 MJ2955 MJ2955 MJE182 MJ2501 MJ2501 2N3055 MJ2955 Bipolar Transistors Cross , TIP2955 MJ2955 MJ3001 MJ3001 BU326A BU326A BU931 2N3055 MJ4032 MJ4032 MJ4032 MJ4035 MJ4035 , 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
B0411

Abstract: B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: BDW51C BDW51C BSS44 BSS44 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C BDW51C 8DW51C BUX10 2N5339 2N5339 2N5339 , BDX33C BDX34C 2N3055 MJ2955 BD138 BD137 BD710 BD709 BD140 BD139 BD433 BD433 BD434 BD434 BD235 BD236 BD237 , CROSS REFERENCE INDUSTRY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 , 2N5339 2N5339 BSS44 2N5884 2N5884 2N5339 BFX34 BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
2001 - texas 2n3055

Abstract: BU108 BU100 BU326 2N5655 equivalent 2n3055 replacement MJ2955 replacement BDX54 2SD424 2N5981 pnp transistor
Text: Operating Area 2N3055 * PNP MJ2955 * *Motorola Preferred Device NPN ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. 2N3055 MJ2955 2N3055 , MJ2955 , Area Motorola Bipolar Power Transistor Device Data 3­3 2N3055 MJ2955 NPN 2N3055 500 300 200 , ) 2N3055 2N3055A 2N6576 (2) 2N5881 2N6052 (2) MJ2955 MJ2955A 15 60 2N5879 20/100 20/100 2k , 4.0 V 100 70 50 30 20 25°C ­ 55°C 200 TJ = 150°C VCE = 4.0 V PNP MJ2955 0.1 0.2 0.3 0.5


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PDF 2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 BU100 BU326 2N5655 equivalent 2n3055 replacement MJ2955 replacement BDX54 2SD424 2N5981 pnp transistor
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: 2N3055 (NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors , Number: 2N3055 /D 2N3055 (NPN), MJ2955 (PNP) Î Î Î Î Î à , Area http://onsemi.com 2 2N3055 (NPN), MJ2955 (PNP) 500 200 300 VCE = 4.0 V TJ = 150 , € Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055 (NPN), MJ2955 (PNP) PACKAGE DIMENSIONS TOâ , Units / Tray MJ2955 175 Shipping TO−204AA TO−204AA 100 Units / Tray MJ2955G


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: 2N3055 (NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , Area http://onsemi.com 2 2N3055 (NPN), MJ2955 (PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE , , MJ2955 (PNP) http://onsemi.com 3 2N3055 (NPN), MJ2955 (PNP) PACKAGE DIMENSIONS TO-204 (TO


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
2001 - pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The , Width <300µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package TO-3 Metal Can Package A B K E C DIM F


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: 2N3055 (NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors , . Publication Order Number: 2N3055 /D 2N3055 (NPN), MJ2955 (PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Region Safe Operating Area http://onsemi.com 2 2N3055 (NPN), MJ2955 (PNP) 500 200 TJ = 150 , , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055 (NPN), MJ2955 (PNP) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
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