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Top Results (3)

Part Manufacturer Description Datasheet Download Buy Part
2N2920A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
2N2920 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, HERMETICALLY SEALED, METAL PACKAGE-6
JANS2N2920 Microsemi Corporation Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, 6 PIN

Search Stock (38)

  You can filter table by choosing multiple options from dropdownShowing 38 results of 38
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N2920 Intersil Corporation Bristol Electronics 19 $12.00 $8.10
2N2920 Central Semiconductor Corp Avnet 300 $16.49 $14.69
2N2920 Central Semiconductor Corp Chip1Stop 6 $25.47 $25.47
2N2920 Motorola Semiconductor Products Bristol Electronics 2 $12.00 $12.00
2N2920 Microsemi Corporation Bristol Electronics 5 $12.00 $12.00
2N2920 Solid State Devices Inc (SSDI) Farnell element14 54 £11.35 £8.75
2N2920 New Jersey Semiconductor Products, Inc. Bristol Electronics - -
2N2920 Solid State Devices Inc (SSDI) Bristol Electronics 10 $12.00 $9.00
2N2920 Solid State Manufacturing Allied Electronics & Automation 0 $12.74 $11.64
2N2920 Solid State Devices Inc (SSDI) element14 Asia-Pacific 54 $16.44 $13.74
2N2920 Microsemi Corporation Chip1Stop 21 $43.80 $31.60
2N2920A Solid State Manufacturing Allied Electronics & Automation 0 $12.74 $11.64
2N2920A Solid State Devices Inc (SSDI) Farnell element14 36 £14.40 £8.06
2N2920A Solid State Devices Inc (SSDI) element14 Asia-Pacific 34 $16.44 $14.45
2N2920A New Jersey Semiconductor Products, Inc. Bristol Electronics - -
2N2920A Fairchild Semiconductor Corporation Bristol Electronics - -
2N2920AHRT STMicroelectronics Avnet - -
2N2920U Microsemi Corporation Chip1Stop 86 $50.40 $36.70
2N2920U Microsemi Corporation Future Electronics 0 $51.91 $36.34
GRP-DATA-JANS2N2920 Microsemi Corporation Chip1Stop 3 $1260.00 $1260.00
JANS2N2920 Motorola Semiconductor Products Bristol Electronics 8 $120.00 $115.38
JANS2N2920U Microsemi Corporation Chip1Stop 104 $158.00 $130.00
JANTX2N2920 Microsemi Corporation Chip1Stop 826 $53.20 $30.90
JANTX2N2920 Microsemi Corporation Future Electronics 57 $45.00 $31.50
JANTX2N2920 CRP Bristol Electronics 50 $13.50 $8.10
JANTX2N2920 Microsemi Corporation New Advantage Corporation 55 $75.00 $69.23
JANTX2N2920 Motorola Semiconductor Products Bristol Electronics 56 $13.50 $8.10
JANTX2N2920L Microsemi Corporation Chip1Stop 1 $334.00 $334.00
JANTX2N2920L Microsemi Corporation New Advantage Corporation 7 $65.75 $60.69
JANTX2N2920L Microsemi Corporation Future Electronics 9 $39.45 $37.00
JANTX2N2920L NES Bristol Electronics - -
JANTX2N2920U Microsemi Corporation Chip1Stop 341 $65.60 $46.30
JANTXV2N2920 Microsemi Corporation Chip1Stop 941 $48.00 $33.90
JANTXV2N2920 Microsemi Corporation Future Electronics 0 $49.38 $34.56
JANTXV2N2920 Unknown Bristol Electronics - -
JTX2N2920 National Semiconductor Corporation Bristol Electronics - -
JV2N2920 Unknown Bristol Electronics - -
JX2N2920 Unknown Bristol Electronics - -

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2N2920 datasheet (79)

Part Manufacturer Description Type PDF
2N2920 Central Semiconductor Leaded Small Signal Transistor Dual - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
2N2920 Motorola Bipolar Transistor, Dual NPN Silicon Annular Transistor - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
2N2920 Semelab DUAL NPN PLANAR TRANSISTOR IN TO77 PACKAGE Original PDF
2N2920 Semico Chip Type 2C2484 Geometry 0307 Polarity NPN - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
2N2920 Solid State Devices TRANS GP BJT NPN 60V 0.03A TO-78 - Pol=NPN / Pkg=TO77 / Vceo=60 / Ic=30m / Hfe=150-600 / fT(Hz)=60M / Pwr(W)=0.6 Original PDF
2N2920 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N2920 General Electric Semiconductor Data Book 1971 Scan PDF
2N2920 Micro Electronics Semiconductor Devices Scan PDF
2N2920 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N2920 Motorola European Master Selection Guide 1986 Scan PDF
2N2920 Motorola The European Selection Data Book 1976 Scan PDF
2N2920 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N2920 Others Semiconductor Master Cross Reference Guide Scan PDF
2N2920 Others Shortform Electronic Component Datasheets Scan PDF
2N2920 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N2920 Others Basic Transistor and Cross Reference Specification Scan PDF
2N2920 Others GE Transistor Specifications Scan PDF
2N2920 Others GE Transistor Specifications Scan PDF
2N2920 Others Shortform Transistor PDF Datasheet Scan PDF
2N2920 Others Shortform Transistor PDF Datasheet Scan PDF

2N2920 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N2920

Abstract:
Text: TECHNICAL DATA NPN SMALL SIGNAL UNITIZED DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/355 Devices 2N2919 2N2919L 2N2919U Qualified Level JAN JANTX JANTXV JANS 2N2920 2N2920L 2N2920U , , VCE = 5.0Vdc IC = 100 µAdc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0 Vdc 2N2919, 2N2919L 2N2920 , 2N2920L 2N2919, 2N2919L 2N2920 , 2N2920L 2N2919, 2N2919L 2N2920 , 2N2920L Collector-Emitter , 10 Adc µAdc 120101 Page 1 of 2 2N2919, L, 2N2920 , L, JAN SERIES ELECTRICAL


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PDF MIL-PRF-19500/355 2N2919 2N2919L 2N2919U 2N2920 2N2920L 2N2920U 2N2919, 2N2920, 2N2920 2N2919 transistor 2N2919 JANS2N2920 2N2920U JANTXV 2N2920 2N2920L 2N2919L JANTXV 2N2919L JANTX 2N2919L
2001 - 2n2920

Abstract:
Text: TECHNICAL DATA 2N2919 JAN, JTX, JTXV 2N2919L JAN, JTX, JTXV 2N2920 JAN, JTX, JTXV 2N2920L JAN, JTX, JTXV 2N2920U JAN, JTX, JTXV Processed per MIL-PRF-19500/355 MIL-PRF QML DEVICES NPN , , TA = +125°C and +25°C 2N2929, 2N2919L 2N2920 , 2N2920L , VCE(sat) VBE(sat) hFE2-1 2N2929, 2N2919L 2N2920 , 2N2920L , 2N2929, 2N2919L 2N2920 , 2N2920L , hFE 60 175 100 235 150 300 240 600 325 800 600 , , 2N2920 , L, U, JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. Unit


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PDF 2N2919 2N2919L 2N2920 2N2920L 2N2920U MIL-PRF-19500/355 2N2920A 2N2929
2N2918

Abstract:
Text: MAXIMUM RATINGS 2N2913 2N2917 2N2914 2N2918 2N2915 2N2919* 2N2916 2N2920 * ' also available as JAN, JANTX, JANTXV RATINGS SYMBOL 2N2913 thru 2N2918 2N2919 2N2920 UNITS Collector-Emitter Voltage , Breakdown Voltage Ic = 10 mAdc, IB = 0 2N2913 thru 2N2918 2N2919, 2N2920 V(BR)CEO(sus) 45 60 Vdc Collector-Base Breakdown Voltage Ic = 10 nAdc, IE = 0 2N2913 thru 2N2918 2N2919, 2N2920 V(BR)CBO 45 60 Vdc , , 2N2920 VCB= 45Vdc,IE= 0,TA= 150°C All Types IcBO 0.010 0.002 10 nAdc Emitter Cutoff Current VFB = 5.0


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PDF 2N2913 2N2917 2N2914 2N2918 2N2915 2N2919* 2N2916 2N2920* 2N2920 2N2919 2N2918 JAN 2N2920 JANTXV
2n2920

Abstract:
Text: MOTOROLA SC XSTRS/R 12E F I b3b?2S4 ooabdaa □ | 0 2N2913 thru 2N2920 MAXIMUM RATINGS Sym bol Rating 2N2913 thru 2N2918 2N2919 2N2920 JAN, JTX, JTXV, JANS , ) Collector-Base Breakdown Voltage (Iq = 10 /zAdc, ig = 0} Vdc V(BR)CBO 2N2913 thru 18, 2N2919, 2N2920 , ) Collector Cutoff Current (VCB = 45 Vdc, lE = 0) Vdc V(BR)CEOIsus) 2N2913 thru 18, 2N2919, 2N2920 ¿¿Ade ICBO 2N2913 thru 18, 2N2919, 2N2920 (VCB = 45 Vdc, Ie = 0, T a = 150°C) All Types â


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PDF 2N2913 2N2920 2N2918 2N2919 ab2917 2N2915 2N2917 2n2920 MOTOROLA 2n2920 2n2919 MOTOROLA 2n2919
2N2920

Abstract:
Text: 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by , R1 (4-April 2014) w w w. c e n t r a l s e m i . c o m 2N2920 2N2920A SILICON DUAL NPN , 0.70 V 600 40 225 300 60 MHz 6.0 pF 3.0 dB R1 (4-April 2014) 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS MATCHING CHARACTERISTICS: (TA=25°C unless otherwise noted


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PDF 2N2920 2N2920A 2N2920
1999 - 2N2920

Abstract:
Text: TECHNICAL DATA 2N2919 JTX, JTXV 2N2919L JTX, JTXV 2N2920 JTX, JTXV 2N2920L JTX, JTXV Processed per MIL-PRF-19500/355 MIL-PRF QPL DEVICES NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM , IC = 1.0 mAdc, IB = 100 µAdc 2N2929, 2N2919L 2N2920 , 2N2920L 2N2929, 2N2919L 2N2920 , 2N2920L 2N2929, 2N2919L 2N2920 , 2N2920L 60 175 100 235 150 300 240 600 325 800 600 1000 0.3 0.5 1.0 Vdc Vdc hFE VCE , )-794-1666 / (978) Fax: (978) 689-0803 03/98 REV: D Page 1 of 2 2N2919, L, 2N2920 , L, JAN SERIES


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PDF 2N2919 2N2919L 2N2920 2N2920L MIL-PRF-19500/355 2N2929, 2N2920, 2N2929
2n2920

Abstract:
Text: TYPES 2N2913 THRU 2N2920. 2N2915A. 2N2916A, 2N2919A, 2N2920A. DUAL N-P-N SILICON TRANSISTORS B U L , 15 6 2N2919 2N2919A 2N2920 2N2920A EACH TRIODE 60 60 6 1 ± 2 0 0 )t 30 0.3 0 .3 0.5 30 0 .2 5 , 2N2973 2N2975 2N2977 MIN MAX MIN MAX 45 45 6 10 10 2 2 600 60 60 60 6 2 10 2 2 240 2N2920 2N2920A , 5 0 1 2 · D A L LA S . T E X A S 75222 TYPES 2N2913 THRU 2N2920. 2N2915A, 2N2916A. 2N2919A, 2N2920A. DUAL N-P-N SILICON TRANSISTORS electrical characteristics at 25°C free-air temperature


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PDF 2N2913 2N2920. 2N2915A. 2N2916A, 2N2919A, 2N2920A. 2n2920 2n2915a 12S3C 2n2916 2N2919A 2N2979 2N2972 alc100 2N2919
2007 - jedec to-78 case

Abstract:
Text: Central 2N2920 NPN SILICON DUAL TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 is a silicon NPN dual transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. JEDEC TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base , =20MHz 60 UNITS nA nA nA V V V V V MHz R0 (22-February 2007) Central TM 2N2920


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PDF 2N2920 2N2920 140kHz 200Hz 22-February jedec to-78 case 2N2920 applications "dual TRANSISTORs" Dual Transistors TO-78
2N2920

Abstract:
Text: , NPN, SILICON, TYPES 2N2919, 2N2920 , 2N2919L, 2N2920L , 2N2919U, AND 2N2920U , JAN, JANTX, JANTXV, JANS , 2N2919 2N2919L 2N2920 2N2920L 2N2919U 2N2920U Min Max 60 240 175 600 VCE(SAT) VCE = 5 , , 2N2919L, 2N2919U 2N2920 , 2N2920L , 2N2920U Forward-current transfer ratio C/W 60 V dc 60 175 3076 100 235 VCE = 5 V dc; IC = 100 A dc 2N2919, 2N2919L, 2N2919U 2N2920 , 2N2920L , 2N2920U , Forward-current transfer ratio 2N2919, 2N2919L, 2N2919U 2N2920 , 2N2920L , 2N2920U Bias condition D; VCB = 45


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PDF MIL-PRF-19500/355N MIL-PRF-19500/355M 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, 2N2920U, MIL-PRF-19500. 2N2920 355N 2N2919 2N2919L 2N2920L 2N2920U 325 MMC JANHCB2N2919 pins 2N2920
2N2920

Abstract:
Text: ;:; 2N2979 2N2920 oo 04 ,.,&i \~ \ ABSOLUTE MMIMUM RATINGS :+ otherwise noted , ) Base-Emitter .Jr - 90 BVEBO 2N2913 thru 18, 2N2972 thru 77 2N2919, 2N2920 , 2N2978, 2N2979 All ~es I r." 45 60 BVCEO(SUS) tkru 2N2918, 2N2972 thru 2N2977 2N2920 , 2N2978, 2N2979 All , 2N2977 2N2919, 2N2920 , 2N2978, 2N2979 Wstaining ~ = O) Emitter-Base Breakdown (IE = 10 pAdc


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PDF 2N2979 2N2920 2N2919-20 2N2978-79 2N2972-77 45BVEBO 2N2913 2N2972 2N2919, 2N2920, 2N2920 2n2917 2N297 2N2919 2n2915 2n2914 2N2920 applications MOTOROLA 2n2920
MOTOROLA 2n2920

Abstract:
Text: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN , JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$' \.>.l , c*\~ ~!.?,:$,! a , % M-ROLA @ 2N2920 SERIES ELECTRICAL CHARACTERISTIC= - wntinud mA= 25°C unless cthewise noted.) Characteristic Symbol Mln M= Unit q ON CHAWCTERISTICS DC Current Gain(l) 2N2920 (Ic = 10 , q 2N2920 SERIES PACtiGE DIMENSIONS 4. mlmD 5 W~R 6. SASE 7. Um & oMrrrEo II


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PDF 2N2920JANID 2N2920JAN, S50SS. 1PHW4101 2N292W~ MOTOROLA 2n2920 2N2920 2N2920JAN
2013 - 2N2920U

Abstract:
Text: , NPN, SILICON, TYPES 2N2919, 2N2920 , 2N2919L, 2N2920L , 2N2919U, AND 2N2920U , JAN, JANTX, JANTXV, JANS , VCE = 5 V dc IC = 10 µA dc 2N2919 2N2919L 2N2920 2N2920L 2N2919U 2N2920U VCE(SAT) IC = 1 mA , , 2N2919L, 2N2919U 2N2920 , 2N2920L , 2N2920U Forward-current transfer ratio °C/W 60 V dc 60 , transfer ratio 2N2919, 2N2919L, 2N2919U 2N2920 , 2N2920L , 2N2920U * 3076 Base-emitter-voltage , , 2N2919L, 2N2919U 2N2920 , 2N2920L , 2N2920U 3076 Forward-current transfer ratio 2N2919, 2N2919L


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PDF MIL-PRF-19500/355R MIL-PRF-19500/355P 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, 2N2920U, 2N2920U
2000 - pins 2N2920

Abstract:
Text: 2N2920 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45° 0.71 (0.028) 0.86 (0.034 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/95 2N2920 ELECTRICAL CHARACTERISTICS (Tamb


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PDF 2N2920 100mA pins 2N2920 2N2920 2N292
2011 - 2N2920

Abstract:
Text: 235 300 240 325 600 600 800 1000 2N2920 , 2N2920L , 2N2920U hFE VCE(sat) 0.3 Vdc , TRANSISTOR Qualified per MIL-PRF-19500 /355 DEVICES LEVELS 2N2919 2N2920 2N2919L 2N2920L 2N2919U 2N2920U JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted , dimensions 2N2919, 2N2919L, 2N2920 , and 2N2920L (TO-78). T4-LDS-0202 Rev. 1 (110638) Page 3 of 4 , and 2N2920 , LL is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum. 12 For transistor


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PDF MIL-PRF-19500 2N2919 2N2920 2N2919L 2N2920L 2N2919U 2N2920U 2N2920U) T4-LDS-0202 2N2920 2N2920U lake transistor transistor 2N2919
2N2920

Abstract:
Text: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual (Matched) Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 MAXIMUM RATINGS Ie O m 3O mA 6O V SOO mW @ Ta ' (S O C 1SOO mW @ T c ' (S O C -6S O C to +(OO O C -6S O C to +(OO O C 3S O C/W 1 = COLLECTOR 1, 2 = BASE 1, 3 = EMITTER 1, 4 N/C, 5 = EMITTER 2, 6 = BASE 2, 7 = COLLECTOR 2 ALL LEADS ARE ISOLATED FROM THE CASE, ISOLATION FROM C1 TO C2 ±200V. CHARACTERISTICS Tc = 25


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PDF 2N2920
2N2483

Abstract:
Text: Data Sheet No. 2C2484 Generic Packaged Part: Chip Type 2C2484 Geometry 0307 Polarity NPN 2N2483, 2N2484, 2N2920 , 2N930 Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Part Numbers: Features: · High speed switching capabilities 2N930, 2N2483, 2N2484, 2N2920 Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base


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PDF 2C2484 2N2483, 2N2484, 2N2920, 2N930 2C2484 2N930, 2N2483 2N2920 2N930 2N2484 2N2920 applications 2N2920A
2920A

Abstract:
Text:  2N2920 2N 2920A SILICON PLANAR NPN DUAL, LOW-LEVEL, LOW-NOISE AMPLIFIERS The 2N 2920 arid 2N 2920A are six terminal devices containing two isolated silicon planar epitaxial NPN transistors in Jedec TO-77 metal case. The good thermal tracking over a wide current and temperature range offers the circuit designer matched transistors with specified performance for differential amplifiers. ABSOLUTE , °C Tamb=25to 125° C 0.8 1 0.4 0.5 mV mV mV mV 387 2N2920 2N 2920A ELECTRICAL CHARACTERISTICS


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PDF 2N2920 10//A 100MA 10MAo 100juAto1 500JUA 10jtiA 2920A 2N2920A
Not Available

Abstract:
Text: m 2N2920 \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual (Matched) Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 30 mA O m lc < MAXIMUM RATINGS 60 V P diss 500 mW @ TA = 25 °C P diss 1500 mW @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg CHARACTERISTICS tc= SYMBOL BVceo BVcbo BVebo IcBO IcEO Iebo V c E (S A T ) b e (o n ) hib h0b


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PDF 2N2920 2N2920 10Hzto
2N3053 NPN transistor

Abstract:
Text: 2N2918DCSM 2N2919 2N2919 CECC 2N2919A 2N2919DCSM 2N2920 2N2920 CECC 2N2920DCSM 2N2951 2N2960 2N2961 2N2979


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PDF 250mW 80min 30min 40min 4/30m 10/10m 360mW 2N3053 NPN transistor 2N2906AQF 2N2907AQF 2N2917 2n2917 dual transistor
1999 - 2N2919

Abstract:
Text: Data Sheet No. CP2920 2N2919 2N2920 Chip Type 2C2920KV Geometry 0307 Polarity NPN 18 MILS 18 MILS B E E 18 MILS B REF: MIL-PRF-19500L/355 18 MILS Chip type 2C2920KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance similar to these devices. Product Summary APPLICATIONS: Designed for general , , 2N2920 · High gain at low currents · Low VCE(sat) voltages M e c h a n ical Specifications


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PDF CP2920 2N2919 2N2920 2C2920KV MIL-PRF-19500L/355 2C2920KV MIL-PRF-19500L 2N2919, 2N2919 CP2920 2N2920 G5241 SEM 2006
2002 - 2N2920

Abstract:
Text: 2N2920 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Matched Dual transistors · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N2920J ) · JANTX level ( 2N2920JX ) · JANTXV level ( 2N2920JV ) · JANS level ( 2N2920JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD , www.SEMICOA.com Page 1 of 2 2N2920 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS


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PDF 2N2920 MIL-PRF-19500 2N2920J) 2N2920JX) 2N2920JV) 2N2920JS) MIL-STD-750 MIL-PRF-19500/355 1x10-3 2N2920 2N2920 applications 2N2920J 2N2920JS 2N2920JV 2N2920JX JANTXV 2N2920
2002 - 2N2920

Abstract:
Text: Solid State Devices, Inc. - SSDI SSDI PRODUCT DATASHEET 2N2920 Product Type: Transistors Product Subtype: NPN - Low Power (1W or Less) TO-78 PDF Datasheet: Contact Factory for Datasheet Ic [A] Vceo [V] HFE Pd [W] 30m 60 225 t(off) [sec] 0.3 ft [MHz] 60 SOLID STATE DEVICES, INC. 14830 Valley View Ave La Mirada, CA 90638 Tel: 562.404.4474 Fax: 562.404.1773 Copyright © 2002 - Solid States Devices, Inc. - All Rights Reserved http


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PDF 2N2920 asp5/16/2005 2N2920 Solid State Devices 2N2920 applications
Not Available

Abstract:
Text: 2N2920+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.150 h(FE) Max. Current gain.600 @I(C) (A) (Test Condition)10u @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N2920 Freq60M
Not Available

Abstract:
Text: 2N2920+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.150 h(FE) Max. Current gain.600 @I(C) (A) (Test Condition)10u @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N2920 Freq60M
Not Available

Abstract:
Text: -T -Z .1 -Z 3 Differential Amplifiers (Continued) Bipolar Monolithic Dual Transistors — NPN *B1-2 PART NUMBER PACKAGE VBE 1-2 mV Max pVI°C Max a v be (Note 1) h FE (Note 1) nA Min Max b V ceo V Min •CBO nA Max NF dB Max ff MHz @ lc Min c obo pF Max COMMENTS 2N2920 TO-78 3 10 150 60 2 3 typ. 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 TO-78 TO-78 TO-78 TO-71 TO-71 TO-71 3 5 5 3 5 5 3 10


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PDF 2N2920 2N4044 2N4045 2N4100 2N4878 2N4879 2N4880 IT120A IT121 IT122
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