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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N2907AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
2N2907AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
2N2907AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4
2N2907AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
2N2907A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
2N2907AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN
SF Impression Pixel

Search Stock (120)

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N2907 ON Semiconductor Rochester Electronics 1 $0.47 $0.38
2N2907 Motorola Mobility LLC Rochester Electronics 38,414 $0.47 $0.38
2N2907 Chip One Exchange - - -
2N2907 Solid State Manufacturing Allied Electronics & Automation 194 $0.48 $0.44
2N2907 STMicroelectronics New Advantage Corporation 225 - -
2N2907 Central Semiconductor Corp Avnet - - -
2N2907 SPC Multicomp Farnell element14 27,682 £1.04 £0.30
2N2907 ITT Interconnect Solutions New Advantage Corporation 33 - -
2N2907 New Jersey Semiconductor Products, Inc. Bristol Electronics 74,930 - -
2N2907 SPC Multicomp element14 Asia-Pacific 26,962 $0.71 $0.31
2N2907 Samsung Semiconductor Bristol Electronics 1,720 $0.75 $0.15
2N2907 Motorola Semiconductor Products Bristol Electronics 90 $0.94 $0.35
2N2907 . Bristol Electronics 4 - -
2N2907 STMicroelectronics Bristol Electronics 64 $0.94 $0.61
2N2907A Continental Device India Ltd Schukat electronic 10,150 €0.27 €0.20
2N2907A SPC Multicomp element14 Asia-Pacific 71,336 $0.86 $0.38
2N2907A Rochester Electronics - - -
2N2907A Cobham Semiconductor Solutions Avnet - - -
2N2907A TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD - $2.95 $2.83
2N2907A Central Semiconductor Corp Avnet - - -
2N2907A Central Semiconductor Corp ComS.I.T. 800 - -
2N2907A ACTIVE COMPNTS/DIODES Bisco Industries 10 - -
2N2907A NTE Electronics Inc Master Electronics 120 $0.64 $0.43
2N2907A Taitron Components Inc Master Electronics 2 $1.61 $0.50
2N2907A SPC Multicomp Farnell element14 71,364 £1.04 £0.30
2N2907A Microsemi Corporation Chip1Stop 1,780 $7.73 $3.13
2N2907ACSM TT Electronics Power and Hybrid / Semelab Limited element14 Asia-Pacific 196 $18.41 $15.64
2N2907ACSM TT Electronics Power and Hybrid / Semelab Limited Farnell element14 196 £14.64 £9.51
2N2907ACSM TT Electronics Power and Hybrid / Semelab Limited Allied Electronics & Automation - $17.76 $17.76
2N2907ACSM TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD 16 - -
2N2907ACSM TT Electronics Power and Hybrid / Semelab Limited Newark element14 196 $17.76 $17.76
2N2907ACSM-QR-EB TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD - $37.28 $35.54
2N2907ADCSM TT Electronics Power and Hybrid / Semelab Limited Allied Electronics & Automation - $39.42 $39.42
2N2907AJANTXV Semicoa Semiconductors Newark element14 5 $6.47 $4.24
2N2907AUA TT Electronics OPTEK Technology Sager - $21.01 $19.41
2N2907AUB Microsemi Corporation Future Electronics 4,347 $6.90 $5.52
2N2907AUB Microsemi Corporation New Advantage Corporation 4,345 $9.86 $9.20
2N2907AUB TT Electronics OPTEK Technology Allied Electronics & Automation - $18.70 $18.70
2N2907AUB TT Electronics OPTEK Technology Sager - $19.51 $18.00
2N2907AUBTX TT Electronics OPTEK Technology Allied Electronics & Automation - $13.99 $13.99
2N2907HR STMicroelectronics Avnet - - -
2N2907JANTX Motorola Semiconductor Products ComS.I.T. 270 - -
GRP-DATA-JANS2N2907A Microsemi Corporation Chip1Stop 1 $1270.00 $1270.00
GRP-DATA-JANTX2N2907AUB Microsemi Corporation Chip1Stop 1 $688.00 $688.00
JANS2N2907AUB Semicoa Semiconductors Chip1Stop 1 $68.76 $68.76
JANSR2N2907AUBT STMicroelectronics Avnet 4 - -
JANTX2N2907A Chip One Exchange 3 - -
JANTX2N2907A Microsemi Corporation Richardson RFPD - $3.69 $3.55
JANTX2N2907AL Microsemi Corporation Future Electronics - $6.57 $6.19
JANTX2N2907AUA Microsemi Corporation Future Electronics 24 $28.68 $22.94
JANTX2N2907AUB Microsemi Corporation Future Electronics 3,264 $9.33 $7.46
JANTX2N2907AUB Microsemi Corporation New Advantage Corporation 3,510 $13.33 $12.44
JANTX2N2907AUB STC New Advantage Corporation 1 - -
JANTXV2N2907A ON Semiconductor Rochester Electronics 2,831 $5.25 $4.27
JANTXV2N2907A Chip One Exchange 77 - -
JANTXV2N2907AUB Semicoa Semiconductors Chip1Stop 2 $12.13 $12.13
JANTXV2N2907AUB-P Microsemi Corporation Future Electronics - $8.10 $6.75
P2N2907ARL1 Chip One Exchange 454 - -
P2N2907ARL1 Motorola Semiconductor Products Chip One Exchange 14,458 - -
P2N2907AZL1 ON Semiconductor Rochester Electronics 8,000 $0.05 $0.04

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2N2907 datasheet (371)

Part Manufacturer Description Type PDF
2N2907 Micro Commercial Components PNP Switching Transistor Original PDF
2N2907 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistor, TO-18 - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2907 On Semiconductor 2N2907 - TRANSISTOR 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, BIP General Purpose Small Signal Original PDF
2N2907 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2907 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2907 Semico Chip Type 2C2907A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2907 Siemens Cross Reference Guide 1998 Original PDF
2N2907 STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2907 Various Russian Datasheets Transistor Original PDF
2N2907 Central Semiconductor PNP METAL CAN Transistors Scan PDF
2N2907 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 0.6A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Scan PDF
2N2907 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N2907 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N2907 Dionics PNP Si High Current Transistor Scan PDF
2N2907 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Scan PDF
2N2907 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
2N2907 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N2907 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
2N2907 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N2907 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF

2N2907 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N2907

Abstract: 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP data sheet transistor 2N2907 2N2222 equivalent 2N2907A 2n2907 metal can 2n2907 transistor
Text: PNP 2N2907 ­ 2N2907A NPN 2N2222 ­ 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and , Junction Temperature TStg Storage Temperature range Value 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 , , Junction to case COMSET SEMICONDUCTORS Value 2N2907A 2N2907 2N2907A 2N2907 Unit 350 K/W 146 K/W 1/3 PNP 2N2907 ­ 2N2907A NPN 2N2222 ­ 2N2222A ELECTRICAL CHARACTERISTICS TC


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PDF 2N2907 2N2907A 2N2222 2N2222A 2N2907 2N2907aA 2N2222 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor
2012 - 2N2907

Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
Text: 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP , hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA (2N2906, 2N2907 ) VCE=10V, IC=0.1mA (2N2906A, 2N2907A ) VCE=10V, IC=1.0mA (2N2906, 2N2907 ) VCE=10V, IC=1.0mA (2N2906A, 2N2907A ) VCE=10V, IC=10mA (2N2906, 2N2907 ) VCE


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PDF 2N2906 2N2907 2N2906A 2N2907A 2N2906, 2N2907 2N2907A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
2n2907

Abstract: 2N2907A 2n2906 2N2907JAN J 2N2907 2N2906JAN 2N2906A
Text: SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite , q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V 2N2907 2N2906A. 2N2907A v (BR)CBO 40 60 60 - Vdc - , GainO) dC - 0.1 mAdc, Vq e = 10 Vdc) hFE 2N2906 2N2907 2N2906A 2N2907A 2N2906 2N2907 2N2906A 2N2907A


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PDF 2N2906 2N2906A. 2N2907 2N2907A 2N2906A 2N2906. 2N2907JAN J 2N2907 2N2906JAN
2N2907 PNP Transistor to 92

Abstract: 2N2907A plastic 2N2907 NPN Transistor 2n2907 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor
Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value ST 2N2907 ST 2N2907A 60 , / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - - hFE


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PDF 2N2907 2N2907A 2N2222 2N2222A 2N2907 PNP Transistor to 92 2N2907A plastic 2N2907 NPN Transistor 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor
2N2907

Abstract: 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
Text: 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , turn-off time, saturated operation Fig. 3: Test circuit for non-saturated operation 150 2N2906, 2N2907 , 2N2906 hFE 20 — — - 2N2907 hFE 35 - - - at-VcE = 10 V, -lc = 1 mA 2 N2906 hFE 25 - - - 2N2907 hFE 50 - - - at-VcE = 10 V, -lc = 10 mA 2N2906 hFE 35 - - - 2N2907 hFE 75 - - - at -VCE = 10 V, -lc = 150 mA 2N2906 hFE 40 - 120 - 2N2907 hFE 100 - 300 - at-VcE = 10 V, -lc = 0.5 A 2N2906 hFE 20


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PDF 2N2906, 2N2907 2N2907 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
1997 - 2n2905 2n2907

Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
Text: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907 , . 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO , 2N2907 at T case 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature November 1997 -65 to 200 o C 200 o C 1/5 2N2905/ 2N2907 THERMAL DATA T


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PDF 2N2905 2N2907 2N2905 2N2907 2N2905) 2N2907) 2n2905 2n2907 2N2905 equivalent st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
2N2901

Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 LB-15N PN2907 2N2907A
Text: CRO 2N 2907 2N2907A 2907 PN 2907A THE 2N2907 , 2N2907A , PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907 , 2N2907A ARE PACKED IN TO-18. THE PN29071 PN2907A ARE PACKED IN T0-92A. CASE TO-18 Ä CASE TO-92A 0 CBE 2N2907 2N2907A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2n2907 2n2907a pn2907 pn2907a Collector-Base Vsltage , otherwise noted) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS


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PDF 2N2907A 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2901 npn 2907a EBC 2N2907 FN2907 PH2907 2N2222 LB-15N PN2907 2N2907A
2N2907 PNP Transistor to 92

Abstract: 2N2907 plastic 2N2907 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92
Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A , 2N2907 / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - -


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PDF 2N2907 2N2907A 2N2222 2N2222A 150at 2N2907 PNP Transistor to 92 2N2907 plastic 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92
2N2907

Abstract: 2n2907 TRANSISTOR PNP 2N2906 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC transistor 2n2906 J 2N2906
Text: =150mA, lB1=lB2=15mA 100 100 ns (Continued on Reverse Side) R3 2N2906, A and 2N2907.A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA (2N2906, 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA (2N2906A, 2N2907A , 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , , 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA (2N2906, 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA (2N2906A


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PDF 2N2906, 2N2907, 2N2906 2N2907 2N2906A 2N2907A 2N2907 2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC transistor 2n2906 J 2N2906
1996 - 2n2907 Motorola

Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
Text: 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 35 40 75 - - - - - - (IC = ­ 1.0 mAdc, VCE = ­ 10 Vdc) 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 25 40 100 - , ) 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 30 40 50 - - - - - - - - , MOTOROLA General Purpose Transistors 2N2904A* thru 2N2907 ,A* PNP Silicon Annular , Current­Gain - Bandwidth Product - fT = 200 MHz (Min) @ IC = 50 mAdc *2N2904A, 2N2905A and 2N2907A are


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PDF 2N2904A* 2N2907 2N2904A, 2N2905A 2N2907A 2N2904A 2N2907, 2N2219, 2N2222, 2N2904A/D* 2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application
2N2907

Abstract: 2N2222
Text: . PINNING PIN 1 2 3 emitter base 2N2907 ; 2N2907A DESCRIPTION collector, connected to case , voltage collector-emitter voltage 2N2907 2N2907A collector current (DC) total power dissipation DC current , System (IEC 134). SYMBOL VcBO V CEO 2N2907 ; 2N2907A PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A emitter-base voltage collector current (DC) peak collector current peak , current 2N2907A emitter cut-off current DC current gain 2N2907 lE = 0; V cb - 50 V |E = 0; V cb = -5 0


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PDF 2N2907; 2N2907A 2N2222 2N2222A. 2N2907 2N2907A MGD624
2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 transistor 2n2907 2N2907 a TRANSISTOR 2N2907 2N2906 to-92 T31N
Text: -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â


OCR Scan
PDF 5b07013 2N2906 2N2907 SO-132A C7/B11 500mA, 600mA 150mA 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 transistor 2n2907 2N2907 a TRANSISTOR 2N2907 2N2906 to-92 T31N
Not Available

Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE bTE T > bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l , . 600 mA ^tot 2N2907 2N2907A max. _ IC Collector-base voltage (open emitter) max , /DISCRETE 2N2907 2N2907A bTE T > bti53T31 DDE6130 fibfl R A T IN G S Limiting values in , Silicon planar epitaxial transistors bb53T31 DDEfll31 7TM ■APX 2N2907 1 2N2907A J C H A R A , ; 5 < 0,02. r August 1990 761 N AMER PHILIPS/DISCRETE 2N2907 2N2907A bTE D â


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PDF 2N2907 2N2907A
2N2907

Abstract: PN2907A PN2907 J 2N2907 NPN 2907 PNP pN2907 PN2222A PN2222 2N2907A 2N2222A
Text: 2N 2907 2N2907A P N 2 9 07 PN2907A THE 2N2907 , 2N2907A , PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907 , 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE PACKED IN T0-92A. CASE TO-18 CBE 2N2907 2N2907A CASE TO-92A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2N2907 2N2907A PN2907 PN2907A Collector-Base Völtage "vCB0 60V 60V , ) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown


OCR Scan
PDF 2N2907A PN2907A 2N2907, 2N2907A, PN2907, 2N2222, 2N2222A, PN2222, PN2222A 2N2907 PN2907 J 2N2907 NPN 2907 PNP pN2907 PN2222 2N2222A
1997 - st 2n2907 to-18

Abstract: IC 7430 transistor 2N2222 PHILIPS 2N2907 philips 2N2907A 2N2222A 0612 2N2907 2N2222A 2n2907a philips 2N2222
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907 ; 2N2907A PNP switching transistors , open base V 2N2907 - -40 V 2N2907A - -60 V - -600 mA mW IC , switching transistors 2N2907 ; 2N2907A LIMITING VALUES In accordance with the Absolute Maximum Rating , - -5 V open base; IC < -100 mA 2N2907 2N2907A VEBO emitter-base voltage IC , PNP switching transistors 2N2907 ; 2N2907A CHARACTERISTICS Tamb = 25 °C unless otherwise


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PDF M3D125 2N2907; 2N2907A 2N2222 2N2222A. MAM263 SCA54 117047/00/02/pp8 st 2n2907 to-18 IC 7430 transistor 2N2222 PHILIPS 2N2907 philips 2N2907A 2N2222A 0612 2N2907 2N2222A 2n2907a philips
2003 - ic 4521

Abstract: 2N2907 10Vdc 2N2907 TRANSISTOR J 2N2907A equivalent 2N2907A 2N2907A IC 406 2N2907 a TRANSISTOR 2n2907 TRANSISTOR PNP
Text: MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base , cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE , MCC 2N2907 , 2N2907A Symbol Parameter Min Max Units - 400 1.6 mVdc Vdc


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PDF 2N2907 2N2907A 600mA) 150mAdc, 15mAdc) 500mAdc, 50mAdc) ic 4521 2N2907 10Vdc 2N2907 TRANSISTOR J 2N2907A equivalent 2N2907A 2N2907A IC 406 2N2907 a TRANSISTOR 2n2907 TRANSISTOR PNP
2N2907 Transistor

Abstract: 2N2907 2N2907A v2n2907a J 2N2907 2N2907 philips
Text: N AUER PHILIPS/DISCRETE b^E D m 1,^53^31 ooeaia^ 04b i 2N2907 2N2907A IAPX I SILICON PLANAR , voltage (open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2907 2N2907A ~vCEO -VCEO , Material Copyrighted By Its Respective Manufacturer AUER PHILIPS/DISCRETE 2N2907 2N2907A bTE D 0DS6130 , 2N2907 -VCEO max. 40 V 2N2907A -VCE0 max. 60 V Emitter-base voltage (open collector) -vEB0 max. 5 V , * bTE D ■bbSa'm 0D2Ö131 7TM 2N2907 2N2907A IAPX A Collector cut-off current 2N2907 2N2907A


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PDF 2N2907 2N2907A 2N2907 Transistor 2N2907A v2n2907a J 2N2907 2N2907 philips
2N2907

Abstract: 2N2907A PN2907 PN2907A pn2222 2n2222 2N2222 pn2907 2n2907 PN2222A PN2222 2N2222A
Text: THE 2N2907 , 2N2907A , PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907 , 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE , Temperature Range CASE TO-18 Irl CASE TO-92A CBE 2N2907 2N2907A 0 EBC PN2907 PN2907A 2N2907 2N2907A PN2907 , °C ELECTRICAL CHARACTERISTICS (TA°25°C unless otherwise noted) PARAMETER SYMBOL 2n2907 pn29o7 min max 2n2907a


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PDF 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2907A 2N2907 PN2907 pn2222 2n2222 2N2222 pn2907 2n2907 PN2222 2N2222A
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and , *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2907 >20 , 2N2907 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise , 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , Page 3 of 4 Customer Notes 2N2906 2N2907 TO-18 Metal Can Package Com pon e n t D isposa


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E
2003 - 2N2907

Abstract: ic 4521 2N2907 TRANSISTOR
Text: !"# 2N2907 2N2907A Features · · High current (max.600mA) Low voltage (max.60V) PNP Switching , Ratings Symbol VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE


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PDF 2N2907 2N2907A 600mA) 2N2907A ic 4521 2N2907 TRANSISTOR
2003 - 2N2907A

Abstract: No abstract text available
Text: 2N2907 2N2907A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Transistors Maximum Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A , hFE Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150℃) 2N2907A , NOTE Φ Φ ΦTYP 2N2907 , 2N2907A Symbol Parameter Min Max Units - 400 , Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC


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PDF 2N2907 2N2907A 600mA) 150mAdc, 15mAdc) 500mAdc, 50mAdc) 2N2907A
motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2N2906 2n2907 Motorola TRANSISTOR 2n2904 2N2905 transistor 2N2905 motorola 2N2907A
Text: €” 2N2905, 2N2907 , 2N3486 35 — — 2N2904A, 2N2906A, 2N3485A 40 — — 2N2905A, 2N2907A , 2N3486A 75 — — dC = 1.0 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 25 _ _ 2N2905, 2N2907 , 2N3486 50 , 40 — — 2N2905A, 2N2907A , 2N3486A 50 — — ^ALSO AVAILABLE 2N2905ALJANS AND 2N2907AJANS , €” Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907 ,A 2N3485.A 2N3486.A Total Device Dissipation , Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A


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PDF 2N2904 2N2905 2N2906 2N2907 2N3485 2N3486 2N2904A 2N2907A motorola transistor 2N2907A 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola TRANSISTOR 2n2904 transistor 2N2905 motorola
2003 - 2N2907 application notes

Abstract: 2n2907
Text: !"# 2N2907 2N2907A Features · · · High current (max.600mA) Low voltage (max.60V) Lead Free , VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base Voltage , Directive Annex 7. www.mccsemi.com Revision: 3 1 of 3 2008/01/01 2N2907 , 2N2907A MCC Micro , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) Emitter Cut-off current (IC


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PDF 2N2907 2N2907A 600mA) 2N2907A 2N2907 application notes
2004 - pin configuration transistor 2n2907

Abstract: 2N2907 NPN Transistor 2N2907 TRANSISTOR 2N2907 application notes 2n2907 multicomp applications of ic 4066 2N2907 High speed switching Transistor
Text: 2N2907 High Speed Switching Transistor Features: · NPN silicon planar switching transistors. · , . Collector Page 1 31/05/05 V1.0 2N2907 High Speed Switching Transistor Switching and Linear , Test : Length : 300µs, Duty Cycle 2% Page 2 31/05/05 V1.0 2N2907 High Speed Switching , Part Number 40 0.6 0.4 100 100 400 TO-18 2N2907 Page 3 31/05/05 V1.0 2N2907 High Speed Switching Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell


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PDF 2N2907 pin configuration transistor 2n2907 2N2907 NPN Transistor 2N2907 TRANSISTOR 2N2907 application notes 2n2907 multicomp applications of ic 4066 2N2907 High speed switching Transistor
2003 - 2n2907

Abstract: 2N2906 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and , 300 *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2907 , 2N2906 2N2907 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified , 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , 4 Customer Notes 2N2906 2N2907 TO-18 Metal Can Package Disclaimer The product


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E 2n2907 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
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