The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N2907AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
2N2907AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
2N2907AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4
2N2907AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
2N2907A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
2N2907AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN

2N2907 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N2907 equivalent

Abstract: No abstract text available
Text: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: (973) 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product. MECHANICAL DATA CASE: TERMINAL , TEKTRONIX TYPE 567 Sampling Oscilloscope or equivalent •16V •200ns FIGURE 1 TEST CIRCUIT FOR


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PDF 2N2907 2N2907 Z0-50ii I50PPS 200ns 2N2907 equivalent
1997 - 2n2905 2n2907

Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
Text: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907 , . 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO , 2N2907 at T case 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature November 1997 -65 to 200 o C 200 o C 1/5 2N2905/ 2N2907 THERMAL DATA T


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PDF 2N2905 2N2907 2N2905 2N2907 2N2905) 2N2907) 2n2905 2n2907 2N2905 equivalent st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
2n2907

Abstract: 2N2907A 2n2906 2N2907JAN J 2N2907 2N2906JAN 2N2906A
Text: SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite , q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V 2N2907 2N2906A. 2N2907A v (BR)CBO 40 60 60 - Vdc - , GainO) dC - 0.1 mAdc, Vq e = 10 Vdc) hFE 2N2906 2N2907 2N2906A 2N2907A 2N2906 2N2907 2N2906A 2N2907A


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PDF 2N2906 2N2906A. 2N2907 2N2907A 2N2906A 2N2906. 2N2907JAN J 2N2907 2N2906JAN
1996 - 2n2907 Motorola

Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
Text: MOTOROLA General Purpose Transistors 2N2904A* thru 2N2907 ,A* PNP Silicon Annular , (Max) @ IC = 150 mAdc · 2N2904A thru 2N2907 , A Complement to NPN 2N2219, A, 2N2222, A 1 EMITTER , 2N2904A/2N2905,A CASE 79­04, STYLE 1 TO­39 (TO­205AD) 2N2906A 2N2907 ,A Total Device Dissipation @ , Storage Junction Temperature Range TJ, Tstg ­ 65 to +200 Max 2N2906A/ 2N2907 ,A CASE 22­03 , 2N2904A 2N2905,A 2N2906A 2N2907 ,A Thermal Resistance, Junction to Ambient RqJA 292 438


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PDF 2N2904A* 2N2907 2N2904A, 2N2905A 2N2907A 2N2904A 2N2907, 2N2219, 2N2222, 2N2904A/D* 2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application
1997 - st 2n2907 to-18

Abstract: IC 7430 transistor 2N2222 PHILIPS 2N2907 philips 2N2907A 2N2222A 0612 2N2907 2N2222A 2n2907a philips 2N2222
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907 ; 2N2907A PNP switching transistors , May 30 Philips Semiconductors Product specification PNP switching transistors 2N2907 , open base V 2N2907 - -40 V 2N2907A - -60 V - -600 mA mW IC , switching transistors 2N2907 ; 2N2907A LIMITING VALUES In accordance with the Absolute Maximum Rating , - -5 V open base; IC < -100 mA 2N2907 2N2907A VEBO emitter-base voltage IC


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PDF M3D125 2N2907; 2N2907A 2N2222 2N2222A. MAM263 SCA54 117047/00/02/pp8 st 2n2907 to-18 IC 7430 transistor 2N2222 PHILIPS 2N2907 philips 2N2907A 2N2222A 0612 2N2907 2N2222A 2n2907a philips
2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 transistor 2n2907 2N2907 a TRANSISTOR 2N2907 2N2906 to-92 T31N
Text: -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â


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PDF 5b07013 2N2906 2N2907 SO-132A C7/B11 500mA, 600mA 150mA 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 transistor 2n2907 2N2907 a TRANSISTOR 2N2907 2N2906 to-92 T31N
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and , *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2907 >20 , 2N2907 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise , 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , Page 3 of 4 Customer Notes 2N2906 2N2907 TO-18 Metal Can Package Com pon e n t D isposa


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E
2N2475

Abstract: 2N2369 equivalent 2N2907 equivalent BS9302 BFS36A 2N2369 FERRANTI BAW63A BAW63 2N930 ic marking z7
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , 20 25* 175* 150 TO-18 2N2906 2N2222 30 800 0.4 150 15 100 300 150 250 20 25* 200* 150 TO-18 2N2907 , 150 15 200 8 G7 2N2907 60 40 45 100 100 300 150 10 0.4 150 15 200 8 G7 2N2894 12 12 60 90 40 150 30


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PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2369 equivalent 2N2907 equivalent 2N2369 FERRANTI ic marking z7
2014 - pq3230

Abstract: 20n60c3 CM6901XISTR
Text: -0.3 to VREF+0.3 V IC Test Equivalent External Circuit 215K CM6901 1 3 Rset VREF , GND 1 22uF/25V + R39 10 Q2 2N2907 C70 Q1 20N60C3 (20A/600V) C9 220uF/450V , 2N2907 6 R101 8.2K PGB From CM6500/02 Family 3 PGI C79 1nF C59 333 C27 334 2 , CSS GND Ilim RT/CT C65 1uF/25V 16 15 Q21 2N2907 12VS U3 CM6901 Family 2 , „¦ 13 12 12VSYNDRVH 11 10 9 R79 56KΩ 12VS Q23 2N2907 VREF C66 1000pF IPLIMIT


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PDF CM6901 CM6901 pq3230 20n60c3 CM6901XISTR
PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain 1N3605
Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS CHIP DRAWINGS Equivalent JEDEC Number GE Type Description Chip Dwg. Specification Sheet No. 1N914 Designed for high-speed switching and general purpos;e applications. 35.88 1N914A 1 1N914B M46P-X510 35.90 1N3064 M46P-X507 Very high , (Chip) except high voltage. 2 35.96 SILICON SIGNAL TRANSISTOR CHIPS Equivalent JEDEC Number GE Type , . (Electrically similar to JEDEC series only.) 2N2906 M67P-X504 9 35.93 2N2907 2N3414 M32P-X503


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PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain
2003 - 2N2907

Abstract: ic 4521 2N2907 TRANSISTOR
Text: !"# 2N2907 2N2907A Features · · High current (max.600mA) Low voltage (max.60V) PNP Switching , Ratings Symbol VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE , =0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE , .016 .021 0.406 0.533 NOTE TYP www.mccsemi.com Revision: 3 1 of 3 2008/01/01 2N2907


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PDF 2N2907 2N2907A 600mA) 2N2907A ic 4521 2N2907 TRANSISTOR
Not Available

Abstract: No abstract text available
Text: to -1.0V with respect to Ag ND- Adjusting this voltage is equivalent to adjusting sys­ tem gain , TDC1016 Equivalent Circuits 65 - 1016-03 Figure 2. Analog Output Equivalent Circuit, TTL and ECL Mode Figure 3. Digital Input Equivalent Circuit, TTL Mode Figure 4. Digital Input Equivalent , Transistors 1/4W 5% C4 2 .2 |o ,F 25V Q1 2N2907 1/4W 5% C5 0 .1 jliF 50V Q2 2N2907 330 1/4W 5% C6 2 -5 p F 50V Q3 2N2907 750 1/4W 5


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PDF TDC1016 10-bit DS90001016
1997 - TDC1016

Abstract: ttl to ecl converter Dual Diode mark b2 1016j SN7404 LM113 HA2539 2N2907 R20 marking DATASHEET OF ha2539
Text: AGND. Adjusting this voltage is equivalent to adjusting system gain The temperature stability of the , theoretical DP and DG due to quantizing error. 6 PRODUCT SPECIFICATION TDC1016 Equivalent , requires outside trim 65-1016-03 Figure 2. Analog Output Equivalent Circuit, TTL and ECL Mode VCC , 37K DGND VEE I = 75µA VEE 65-1016-04 Figure 3. Digital Input Equivalent Circuit, TTL Mode Figure 4. Digital Input Equivalent Circuit, ECL Mode 7 TDC1016 PRODUCT SPECIFICATION


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PDF TDC1016 10-Bit, TDC1016 10-bit DS90001016 ttl to ecl converter Dual Diode mark b2 1016j SN7404 LM113 HA2539 2N2907 R20 marking DATASHEET OF ha2539
C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent transistor c495 c637 transistor C735 transistor TRANSISTOR bc107 current gain c372 transistor
Text: 2N2906A 2N2222 2N2907 2N2222A 2N2907A NPN BC325 BC326 BCW34 NPN BC142 BC301 BC302 BFT32 BFT33 , Collector Current BS Type Commercial Case Min. Comments Number Equivalent Outline Polarity , BS9300 C673 2N2906 T018 PNP 60 40 5 40 120 150 200 1 BS9300 C674 2N2907 T018 PNP 60 40 6 100 300 150 , NPN 25 25 4 75 250 10 120 BS9300 0755 2N2907 * T018 PNP 25 25 4 75 250 10 120 BS9300 C756 2N2218 , 'Near Equivalent TO-5


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PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent transistor c495 c637 transistor C735 transistor TRANSISTOR bc107 current gain c372 transistor
2003 - 2N2907 application notes

Abstract: 2n2907
Text: !"# 2N2907 2N2907A Features · · · High current (max.600mA) Low voltage (max.60V) Lead Free , VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base Voltage , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE , =0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE , Directive Annex 7. www.mccsemi.com Revision: 3 1 of 3 2008/01/01 2N2907 ,2N2907A MCC Micro


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PDF 2N2907 2N2907A 600mA) 2N2907A 2N2907 application notes
2N2369 equivalent

Abstract: BS9302 BFS36A BFS36 BAW63A BAW63 2N930 2N929 ic marking z7 f025
Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Transistors Diodes Nearest metal can Device or E-line Device Type marking equivalent B.S. number* Page Type marking , 100 150 TO-18 2N2221 2N2907 40 600 0.4 150 15 100 300 150 200 50 45 100 150 TO-18 2N2222 ZT181 35 , 150 15 200 8 G7 2N2907 60 40 45 100 100 300 150 10 0.4 150 15 200 8 G7 2N2894 12 12 60 90 40 150 30


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PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2369 equivalent ic marking z7 f025
2004 - pin configuration transistor 2n2907

Abstract: 2N2907 NPN Transistor 2N2907 TRANSISTOR 2N2907 application notes 2n2907 multicomp applications of ic 4066 2N2907 High speed switching Transistor
Text: 2N2907 High Speed Switching Transistor Features: · NPN silicon planar switching transistors. · , . Collector Page 1 31/05/05 V1.0 2N2907 High Speed Switching Transistor Switching and Linear , Test : Length : 300µs, Duty Cycle 2% Page 2 31/05/05 V1.0 2N2907 High Speed Switching , Part Number 40 0.6 0.4 100 100 400 TO-18 2N2907 Page 3 31/05/05 V1.0 2N2907 High Speed Switching Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell


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PDF 2N2907 pin configuration transistor 2n2907 2N2907 NPN Transistor 2N2907 TRANSISTOR 2N2907 application notes 2n2907 multicomp applications of ic 4066 2N2907 High speed switching Transistor
2003 - 2n2907

Abstract: 2N2906 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and , 300 *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2907 , 2N2906 2N2907 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified , 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , 4 Customer Notes 2N2906 2N2907 TO-18 Metal Can Package Disclaimer The product


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E 2n2907 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
1016j7cx

Abstract: N4001 diode sn7404* dip 1016j5c HA2539 2N2907 N4001 TDC1016 1016J7C 1016j7a
Text: input is normally set to -1.0V with respect to AgND- Adjusting this voltage is equivalent to adjusting , Manufacturer PRODUCT SPECIFICATION TDC1016 Equivalent Circuits Rout 80q1 Agnd cout Août INPUT DATA , Equivalent Circuit, TTL and ECL Mode Figure 3. Digital Input Equivalent Circuit, TTL Mode Figure 4. Digital Input Equivalent Circuit, ECL Mode This Material Copyrighted By Its Respective Manufacturer 7 TDC1016 , 2N2907 Q2 2N2907 Q3 2N2907 Q4 2N6660 Q5 2N6660 Integrated Circuits U1 TDC1016 U2 LM113 U3 HA2539


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PDF TDC1016 10-Bit, 10-bit DS9000101 1016j7cx N4001 diode sn7404* dip 1016j5c HA2539 2N2907 N4001 TDC1016 1016J7C 1016j7a
2012 - 20N60C3 equivalent

Abstract: 20n60c3 circuit MOSFET 20N60c3
Text: RSET V to I Voltage -0.3 to VREF+0.3 V IC Test Equivalent External Circuit : 215K CM6901 , GND 1 22uF/25V + R39 10 Q2 2N2907 C70 Q1 20N60C3 (20A/600V) C9 220uF/450V , 2N2907 6 R101 8.2K PGB From CM6500/02 Family 3 PGI C79 1nF C59 333 C27 334 2 , CSS GND Ilim RT/CT C65 1uF/25V 16 15 Q21 2N2907 12VS U3 CM6901 Family 2 , „¦ 13 12 12VSYNDRVH 11 10 9 R79 56KΩ 12VS Q23 2N2907 VREF C66 1000pF IPLIMIT


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PDF CM6901 CM6901 20N60C3 equivalent 20n60c3 circuit MOSFET 20N60c3
Not Available

Abstract: No abstract text available
Text: MCC 2N2907 2N2907A   omponents 20736 Marilla Street Chatsworth  , Maximum Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A , hFE Collector cut-off current (VCB=50Vdc, IE=0) 2N2907 (VCB=50Vdc, IE=0,TA=150к) (VCB , Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC , Re vision: A 1 of 3 2 0 1 1 /0 1 /0 1 MCC 2N2907 ,2N2907A TM Micro Commercial


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PDF 2N2907 2N2907A 600mA)
2003 - 2N2907 plastic

Abstract: 2N2907A plastic 2N2907 a TRANSISTOR
Text: !"# 2N2907 2N2907A Features · · · High current (max.600mA) Low voltage (max.60V) Case Material: Molded Plastic. Classification Rating 94V-0 Rating Collector-Emitter Voltage 2N2907 2N2907A , Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB , =5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC , 0.406 0.533 NOTE TYP www.mccsemi.com Revision: 2 1 of 3 2006/05/17 2N2907 ,2N2907A


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PDF 2N2907 2N2907A 600mA) 2N2907A 2N2907 plastic 2N2907A plastic 2N2907 a TRANSISTOR
2N2906

Abstract: 2N2907
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and , 300 *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2907 , 2N2906 2N2907 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified , 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , 4 Customer Notes 2N2906 2N2907 TO-18 Metal Can Package Component Disposal


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E 2N2907
C495 transistor

Abstract: C735 transistor c638 transistor C756 TRANSISTOR C644 transistor transistor c495 PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
Text: Rating hFE at Collector Current BS Type Commercial Case Min. Comments Number Equivalent , 66 5 100 300 150 200 J BS9300 C673 2N2906 T018 PNP 60 40 5 40 120 150 200 1 BS9300 C674 2N2907 , 0754 2N2222" T018 NPN 25 25 4 75 250 10 120 BS9300 0755 2N2907 * T018 PNP 25 25 4 75 250 10 120 , 0 23 - 12-7 min - 'Near Equivalent TO-5


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PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR C644 transistor transistor c495 PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
NPN transistor 2n2222 beta value

Abstract: 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values
Text: 3.0V (CMOS thresholds). E levels are: L = 1.5V and H = 3.5V. All tests done using 2N2222 and 2N2907 , using 2N2222 and 2N2907 output transistors with B eta>40 @ Ic = 400 mA and B eta>27 @ Ic - 500 mA and V , minimum collector resist ance. In this way, small geometry transistors like the 2N2222 and 2N2907 devices , resistors, almost all 2N2222 and 2N2907 devices perform well, but we have obtained devic es from some , overshoot rather than one particular device's w avy curve. The typical 2N2222 and 2N2907 will deliver 750 mA


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PDF EL2021C EL2021C EL2021 EL2021, NPN transistor 2n2222 beta value 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values
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