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Part Manufacturer Description Datasheet Download Buy Part
2N2906AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN
2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4
2N2906A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA,
2N2906AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
JAN2N2906A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN
JANTXV2N2906AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
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2N2906 SOLIST Bristol Electronics 154 - -
2N2906 Central Semiconductor Corp Avnet - $0.95 $0.87
2N2906 Motorola Semiconductor Products ComS.I.T. 1,154 - -
2N2906 Solid State Manufacturing Allied Electronics & Automation - $0.48 $0.44
2N2906 Motorola Semiconductor Products Bristol Electronics 1 - -
2N2906 Synertek Systems Incorporated Bristol Electronics 2,007 - -
2N2906 New Jersey Semiconductor Products, Inc. Bristol Electronics 25,005 - -
2N2906 Texas Instruments Bristol Electronics 2 - -
2N2906A Central Semiconductor Corp Avnet - - -
2N2906A SPC Multicomp Farnell element14 994 £1.17 £0.34
2N2906A Solid State Manufacturing Allied Electronics & Automation - $0.48 $0.44
2N2906A SPC Multicomp Newark element14 104 $0.27 $0.21
2N2906A SPC Multicomp element14 Asia-Pacific 611 $0.71 $0.31
2N2906ACSM TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD - $23.69 $22.58
J2N2906 Raytheon Bristol Electronics 40 - -
JAN2N2906 . Bristol Electronics 7 $4.48 $4.48
JANTX2N2906A Motorola Semiconductor Products New Advantage Corporation 60 - -
JANTX2N2906A Microsemi Corporation Chip1Stop 183 $20.20 $11.50
JANTX2N2906AUB Microsemi Corporation Future Electronics - $13.54 $10.83
JANTXV2N2906 Motorola Semiconductor Products Bristol Electronics 6 - -
JANTXV2N2906A Microsemi Corporation Bristol Electronics 38 - -

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2N2906 datasheet (195)

Part Manufacturer Description Type PDF
2N2906 Central Semiconductor PNP SILICON TRANSISTOR Original PDF
2N2906 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2906 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2906 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2906 Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original PDF
2N2906 STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES Original PDF
2N2906 Bharat Electronics Transistor Selection Guide Scan PDF
2N2906 Central Semiconductor PNP METAL CAN Transistors Scan PDF
2N2906 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 0.6A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan PDF
2N2906 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N2906 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N2906 Dionics PNP Si High Current Transistor Scan PDF
2N2906 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan PDF
2N2906 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
2N2906 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
2N2906 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N2906 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N2906 General Diode Transistor Selection Guide Scan PDF
2N2906 General Electric Semiconductor Data Book 1971 Scan PDF
2N2906 Infineon Technologies TRANS GP BJT PNP 40V 0.6A 2TO-18 Scan PDF

2N2906 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2n2907

Abstract: 2N2907A 2n2906 2N2907JAN J 2N2907 2N2906JAN 2N2906A
Text: q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V 2N2906. 2N2907 2N2906A. 2N2907A v (BR)CBO 40 60 60 - Vdc - , SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , . Initial and End P oint Lim its Symbol *CBO 2N2906. 2N2907 2N2906A 2N2907A hFE 2N2906. 2N2907 , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite


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PDF 2N2906 2N2906A. 2N2907 2N2907A 2N2906A 2N2906. 2N2907JAN J 2N2907 2N2906JAN
2N2907

Abstract: 2n2907 TRANSISTOR PNP 2N2906 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC transistor 2n2906 J 2N2906
Text: 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA ( 2N2906 , 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA ( 2N2906A , 2N2907A Only) 40 75 hFE VCE=10V, lc=1.0mA ( 2N2906 , 2N2907 Only) 25 50 hFE VCE=10V, lc=1.0mA ( 2N2906A , 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA ( 2N2906 , 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA ( 2N2906A


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PDF 2N2906, 2N2907, 2N2906 2N2907 2N2906A 2N2907A 2N2907 2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC transistor 2n2906 J 2N2906
2N2906

Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 transistor 2n2907 2N2907 a TRANSISTOR 2N2907 2N2906 to-92 T31N
Text: -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â


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PDF 5b07013 2N2906 2N2907 SO-132A C7/B11 500mA, 600mA 150mA 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 transistor 2n2907 2N2907 a TRANSISTOR 2N2907 2N2906 to-92 T31N
2004 - 2N2906

Abstract: No abstract text available
Text: 2N2906 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2906 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2906 at our online store! 2N2906 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2906 Information Did you Know , for Parts Request a Quote Test Houses 2N2906 Specifications Military/High-Rel : N V(BR)CEO (V


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PDF 2N2906 2N2906 STV3208 LM3909N LM3909
2012 - 2N2907

Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
Text: 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP , hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA ( 2N2906 , 2N2907) VCE=10V, IC=0.1mA ( 2N2906A , 2N2907A) VCE=10V, IC=1.0mA ( 2N2906 , 2N2907) VCE=10V, IC=1.0mA ( 2N2906A , 2N2907A) VCE=10V, IC=10mA ( 2N2906 , 2N2907) VCE


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PDF 2N2906 2N2907 2N2906A 2N2907A 2N2906, 2N2907 2N2907A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
2N2906

Abstract: 2N2906A PN2221 2N2221 2N2221A 2N290 PN2221A PN2906 PN2906A
Text: 2N290Ô ■2N2906A PN 2906 ■PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES I THE 2N2906 , 2N2906A , PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE , , 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906 , 2N2906A ARE PACKED IN TO-18. THE FN2906, PN2906A ARE PACKED IN TO-92A. CASE TO-18 CASE TO-92A 0 CBE 2N2906 2N2906A EBC PN2906 PN2906A ABSOLUTS MAXIMUM RATINGS 2N2906 2N2906A PN2906 PN290ÇA Collector-Base Vcsltage -VCBO 60V 60V 60V 60V Collector-Emitter Voltage


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PDF 2N290Ã 2N2906A PN2906A 2N2906, 2N2906A, PN2906, COMPLEMEN171ARY 2N2221 2N2221A, 2N2906 PN2221 2N2221 2N2221A 2N290 PN2221A PN2906
motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2N2906 2n2907 Motorola TRANSISTOR 2n2904 2N2905 transistor 2N2905 motorola 2N2907A
Text: €” Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-53 2N2904,A, 2N2905,A, 2N2906.A , 2N2907,A, 2N3485,A, 2N3486 , VdcMD 2N2904, 2N2906 , 2N3485 20 _ _ 2N2905, 2N2907, 2N3486 30 — — 2N2904A, 2N2906A , 2N3485A , Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906 ,A, 2N2907A 2N3485,A , 2N2906 /2907 TO-18 (TO-206AA) CASE 26-03, STYLE 1 2N3485/3486 TO-46 (TO-206AB) GENERAL PURPOSE TRANSISTOR


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PDF 2N2904 2N2905 2N2906 2N2907 2N3485 2N3486 2N2904A 2N2907A motorola transistor 2N2907A 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola TRANSISTOR 2n2904 transistor 2N2905 motorola
1997 - 2N2906

Abstract: 2N2222A 0612 transistor 2N2222 PHILIPS 2N2222 2N2222A 2N2906A transistor 2n2906
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906 ; 2N2906A PNP switching transistors , . MAX. -60 UNIT open base V 2N2906 - -40 V 2N2906A - -60 V - , Product specification PNP switching transistors 2N2906 ; 2N2906A LIMITING VALUES In accordance , voltage VCEO - - VCBO -60 V - -5 V open base 2N2906 2N2906A VEBO , Product specification PNP switching transistors 2N2906 ; 2N2906A CHARACTERISTICS Tamb = 25 °C


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PDF M3D125 2N2906; 2N2906A 2N2222 2N2222A. MAM263 SCA54 117047/00/02/pp8 2N2906 2N2222A 0612 transistor 2N2222 PHILIPS 2N2222A 2N2906A transistor 2n2906
2N2906

Abstract: No abstract text available
Text: complements: 2N2222 and 2N2222A. PINNING PIN 1 2 3 emitter base 2N2906 ; 2N2906A DESCRIPTION collector , collector-emitter voltage 2N2906 2N2906A collector current (DC) total power dissipation DC current gain transition , System (IEC 134). SYMBOL V cB O V CEO 2N2906 ; 2N2906A PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A emitter-base voltage collector current (DC) peak collector current peak , otherwise specified SYMBOL ICBO PARAMETER collector cut-off current 2N2906 collector cut-off current 2N2906A


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PDF 2N2222 2N2222A. 2N2906; 2N2906A 2N2906 2N2906A MG0624
2N2907

Abstract: 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
Text:  2N2906 , 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , turn-off time, saturated operation Fig. 3: Test circuit for non-saturated operation 150 2N2906 , 2N2907 , 2N2906 hFE 20 — — - 2N2907 hFE 35 - - - at-VcE = 10 V, -lc = 1 mA 2 N2906 hFE 25 - - - 2N2907 hFE 50 - - - at-VcE = 10 V, -lc = 10 mA 2N2906 hFE 35 - - - 2N2907 hFE 75 - - - at -VCE = 10 V, -lc = 150 mA 2N2906 hFE 40 - 120 - 2N2907 hFE 100 - 300 - at-VcE = 10 V, -lc = 0.5 A 2N2906 hFE 20


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PDF 2N2906, 2N2907 2N2907 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
2001 - Not Available

Abstract: No abstract text available
Text: 5290 e-mail sales@cdil.com www.cdil.com 2N2906_07Rev240901 Continental Device India Limited , Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2906 , 07 TO-18 Metal Can Package , Page 1 of 4 NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2906 , 07 TO-18 Metal Can Package , Current Gain DESCRIPTION DYNAMIC CHARACTERISTICS Transition Frequency hFE 2N2906 MIN MAX 20 , Device India Limited Data Sheet Page 2 of 4 2N2906 , 07 TO-18 Metal Can Package TO-18 Metal


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PDF 2N2906, C-120 2N2906 07Rev240901
Not Available

Abstract: No abstract text available
Text: TO THE NPN TYPE 2N2221, 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906 , 2N2906A ARE PACKED IN , 2N2906 2N2906A 2N2906 ABSOLUTE MAXIMUM RATINGS PN2906 PN2906A 2N2906A PN2906 PN2906A , (TA~25°C PARAMETER Collector-Base Breakdown Voltage unless otherwise noted) 2N2906A 2N2906 , 2N 2906 PN 2906 M • 2N2906A ■PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A , PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL


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PDF 2N2906A PN2906A 2TT2906, 2N2906A, PN2906, PN2906A 2N2221, 2N2221A, PN2221 PN2221A
Not Available

Abstract: No abstract text available
Text: 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E Continental , 13.5" 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet , Fax + 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E , SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E
2n2906

Abstract: PN2221 PN2906A 2N2221A 2N2906A PN2906
Text:  2N2906 ■2N2906A PN 2906 ■PN2906A pnp silicon general purpose amplifiers and switches J THE 2n2906 , 2n2906a , pn2906, pn2906a are pnp SILICON planar epitaxial transistors FOR GENERAL , RATINGS 2n2906 2n2906a pn2906 pn2906a Collector-Base Veltage -vcbo 60v 60v 60v 60v , ) PARAMETER symbol 2n2906 pn2906 min max 2n2906a pn2906a min max unit test conditions Collector-Base , , 2N2221A, PN2221, pn2221a respectively. THE 2W2906, 2N2906A ARE packed in to-18. THE PN2906, pn2906a ARE


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PDF 2N2906 2N2906A PN2906A 2n2906, 2n2906a, pn2906, pn2906a 2n2221 2N2221A, PN2221, 2n2906 PN2221 2N2221A PN2906
2003 - 2n2907

Abstract: 2N2906 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
Text: 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E , " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page , SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E 2n2907 2N2906 equivalent data sheet transistor 2n2907 2N2907 application notes 2N2907 SO
2N2906

Abstract: 2N2907
Text: 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E , " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page , SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E 2N2907
2N2906

Abstract: 2N2906A
Text: lector-base voltage (open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2906 2N2906A , Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N2906 2N2906A h^E T , ) —IC < 100 mA 2N2906 -vCEO max. 40 V 2N2906A ~vCEO max. 60 V Emitter-base voltage (open collector , CHARACTERISTICS T"amb = 25 °C unless otherwise specified LTE D ■bb53^31 DÜSÖ1S7 273 I 2N2906 2N2906A A IAPX 2N2906 2N2906A Collector cut-off current lE = 0;-VCB = 50V ~'CBO < 20 10 nA


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PDF 2N2906A 2N2906 2N2906A 150mA -16V-
2N2907 application notes

Abstract: 2N2907 Transistor data sheet transistor 2n2907 2N2907 2n2907 metal can 2N2906 IB115
Text: 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E , " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page , PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear


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PDF 2N2906 2N2907 C-120 2N2906 2907Rev010303E 2N2907 application notes 2N2907 Transistor data sheet transistor 2n2907 2N2907 2n2907 metal can IB115
2N2906A

Abstract: 2N2221 2N2221A 2N2906 PN2221 PN2221A PN2906 PN2906A
Text: 2N2221, 2N2221A, PN2221, PN2221A RESPECTIVELY. THE 2N2906 , 2N2906A ARE PACKED IN TO-18. THE PN2906, PN2906A ARE PACKED IN TO-92A. CASE TO-18 CBE 2N2906 2N2906A CASE TO-92A EBC FN2906 PN2906A ABSOLUTE MAXIMUM RATINGS 2N2906 2N2906A PN2906 PN2906A Collector-Base Voltage -VCBO 60V 60V 4 60V 60V , I THE 2N2Q06, 2N2906A , PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL , \ t Collector-Emitter Saturation Volt-ï ve 2N2906 PN2906 MIN MAX 60 40 5 20 20 50 50 -VCE(sat


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PDF 2N2Q06, 2N2906A, PN2906, PN2906A 2N2221, 2N2221A, PN2221, PN2221A 2N2906, 2N2906A 2N2221 2N2221A 2N2906 PN2221 PN2906
2907

Abstract: 2N2907 2907a 2N2908 2N2906 2N2907A 2n2906a A2907A J 2N2907 2IM2907
Text: 46 n> Turn-off time Temps total de coupure ( r IJ.Z) lc »-150 mA Igj »-15 mA 'B2 w+15mA Vf 2N2906.A , PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNP SILICIUM, PLANAR EPITAXIAUX * 2N2906 , 2907A -20 -10 nA lE =0 VCB =-50 V T,mb=150°C 2N2906 2N 2907 2N 2906A 2N2907A -20 -10 ilA , 2N2906 2N 2907 2N 2906A 2N 2907A 35 75 40 100 * Pulsed t =<300jus S <2% Impulsions 2/6 236 2N 2906 , =—150 mA vCE =-10 V h21E* 2N 2906.A 2N 2907, A 40 120 100 300 iç =-500 mA vCE =-10V 2N2906 2N 2907


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PDF 2N2906 2N2907 2907 2907a 2N2908 2N2907A 2n2906a A2907A J 2N2907 2IM2907
2n390g

Abstract: 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor TPQ6700 2N3799 TPQ6502 2N2906 NPN Transistor 2n2222
Text: 400 150 2N2906 TPQ2907 60 40 5 50 100 — 150 10 200 8.0 400 150 2N2907 TPQ3798 60 40 5 10 150 â , €” 150 10 200 8.0 400 150 2N2221/ 2N2906 TPQ6002 60 30 5 30 100 — 150 10 200 8.0 400 150 2N2222/2N2907 , 10 200 8.0 400 150 2N2221/ 2N2906 TPQ6502 60. 30 5 30 100 — 150 10 200 8.0 400 150 2N2222/2N2907


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PDF 14-lead 2N3799 TPQ3906 TPQ6001 2N2221/2N2906 TPQ6002 2N2222/2N2907 TPQ6100 2N2483/2N3798 TPQ6100A 2n390g 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor TPQ6700 2N3799 TPQ6502 2N2906 NPN Transistor 2n2222
Not Available

Abstract: No abstract text available
Text: “ v CBO Collector-base voltage (open emitter) 2N2906 2N2906A Collector-emitter voltage , ‚¬ Qualification approved to CECC 50 002-299 October 1982 755 N AMER PHILIPS/DISCRETE 2N2906 2N2906A , bbSB'lBl 002A127 273 I IAPX 2N2906 2N2906A D Silicon planar epitaxial transistors , 2N2906 2N2906A -'C B O < 20 10 nA IE = 0; - V CB = 50 V; Tamb = 150 °C - ‘CBO , N AMER PHILIPS/DISCRETE bbSB'lBl DDEfilBS 4T0 ■IAPX b'JE T > A ZN ZyU b 2N2906A


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PDF 2N2906A 2N2906
1994 - transistor 2N2905

Abstract: 2N2906 equivalent 2n2907 2N2904 data sheet transistor 2n2907 2N2905 transistor 2N2905 equivalent 2N2905 2N2904-2N2905-2N2906-2N2907 2N290
Text: 2N2904/2N2905 2N2906 /2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are designed for high-speed saturated switching and general purpose applications. 2N2904/2N2905 approved to CECC 50002102, 2N2906 /2N2907 approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE


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PDF 2N2904/2N2905 2N2906/2N2907 2N2904, 2N2905, 2N2906 2N2907 2N2905) 2N2907) transistor 2N2905 2N2906 equivalent 2N2904 data sheet transistor 2n2907 2N2905 transistor 2N2905 equivalent 2N2905 2N2904-2N2905-2N2906-2N2907 2N290
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Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO , Number 8078 Issue 2 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 ELECTRICAL , PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31


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PDF 2N2906 -600mA 400mW Sy455 O-206AA)
st 2n2907 to-18

Abstract: P008B 2N2904 2n2905 ST
Text: SGS-THOMSON R aD SM U LK E in ^O M lD ei D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si licon planar epitaxial PNP transistors in Jedec TO39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are desi gned for high-speed saturated switching and gene ral purpose applications. ^ 2N2904/2N2905 approved to CECC 50002102, 2N2906 /2N2907 approved to CECC 50002-103 available on request. 2N2904/2N2905 2N2906 /2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES A B S O


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PDF 2N2904, 2N2905, 2N2906 2N2907 2N2905) 2N2907) 2N2904/2N2905 2N2906/2N2907 st 2n2907 to-18 P008B 2N2904 2n2905 ST
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