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2N2647 SILI Bristol Electronics 48 - -
2N2647 Central Semiconductor Corp Avnet - - -
2N2647 Solid State Manufacturing Allied Electronics & Automation - $1.99 $1.82
2N2647 New Jersey Semiconductor Products, Inc. Bristol Electronics 1,609 - -
2N2647 Solid State Devices Inc (SSDI) Bristol Electronics 14 $3.00 $2.25
2N2647 Motorola Semiconductor Products Bristol Electronics 1 - -
2N2647 SPC Multicomp Newark element14 1,509 $3.63 $1.32
2N2647 Unknown Bristol Electronics 58 - -
2N2647 SSI Bristol Electronics 2 - -
2N2647 Chip One Exchange 730 - -
2N2647 SPC Multicomp element14 Asia-Pacific 312 $2.78 $1.84
2N2647 SPC Multicomp Farnell element14 275 £6.29 £1.96

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2N2647 datasheet (25)

Part Manufacturer Description Type PDF
2N2647 Comset Semiconductors Silicon Junction Transistors Original PDF
2N2647 Boca Semiconductor Silicon PN Unijuction Transistor Scan PDF
2N2647 Central Semiconductor UNIJUNCTION TRANSISTORS Scan PDF
2N2647 Central Semiconductor Scan PDF
2N2647 General Electric Semiconductor Data Book 1971 Scan PDF
2N2647 General Electric Semiconductor Data Handbook 1977 Scan PDF
2N2647 General Electric Silicon unijunction transistor. 30V, 50mA. Scan PDF
2N2647 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N2647 Motorola European Master Selection Guide 1986 Scan PDF
2N2647 Motorola The European Selection Data Book 1976 Scan PDF
2N2647 Motorola Silicon PN unijunction transistor. Scan PDF
2N2647 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N2647 Others Semiconductor Master Cross Reference Guide Scan PDF
2N2647 Others Basic Transistor and Cross Reference Specification Scan PDF
2N2647 Others GE Transistor Specifications Scan PDF
2N2647 Others Shortform Transistor PDF Datasheet Scan PDF
2N2647 Others GE Transistor Specifications Scan PDF
2N2647 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2647 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N2647 NEWMAR Product Portfolio 1972/73 Scan PDF

2N2647 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N2646

Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol "Power scr" rbbo
Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a , Temperature Capacitor discharge ­ 10µF or less, 30volts or less. 2N2646 2N2647 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C 2N2646 2N2647 ELECTRICAL CHARACTERISTICS , Ratings 2N2646 Intrinsic stand-off ratio VB2B1 = 10V 2N2647 Interbase Resistance , VB2B1 = 3V


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PDF 2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol "Power scr" rbbo
2N2646

Abstract: SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2647 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 power scr
Text: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter , Ratings 2N2646 2N2647 VB1E Base 1 ­ Emitter Voltage 30 V VB2E Base 2 ­ Emitter , Current V(BR)B1E 2N2646 ­ 2N2647 Max µA 12 30 COMSET SEMICONDUCTORS V 1/2 2N2646 2N2647 Symbol 2N2646 ­ 2N2647 Ratings RBBO Intrinsic stand-off ratio VB1B2 = 10 V


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PDF 2N2646 2N2647 2N2646 2N2647 SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 power scr
2n2646

Abstract: 2n2647
Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS , ) Symbol 2N2646 2N2647 Interbase resistance (VB2B1 = 3V, IE = 0) Min Typ Max Unit Î , peak pulse voltage(3) %/°C Volts mA 2N2646 2N2647 IEB2O - 0.005 0.005 12 0.2 µA 2N2646 2N2647 IP - 1 1 5 2 µA 2N2646 2N2647 IV 4 8 6 10 18 mA VOB1 3 6 5 7 - volts 2N2646 2N2647 Note 1: Intrinsic standoff voltage: Î


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PDF 2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647
2N2646

Abstract: 2N2646 transistor TO-220 2N2646
Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS , ) Symbol 2N2646 2N2647 Interbase resistance (VB2B1 = 3V, IE = 0) Min Typ Max Unit Î , peak pulse voltage(3) %/°C Volts mA 2N2646 2N2647 IEB2O - 0.005 0.005 12 0.2 µA 2N2646 2N2647 IP - 1 1 5 2 µA 2N2646 2N2647 IV 4 8 6 10 18 mA VOB1 3 6 5 7 - volts 2N2646 2N2647 Note 1: Intrinsic standoff voltage: Î


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PDF 2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646
GES2646

Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
Text: 2N2646.GES2646 2N2647.GES2647 MIN. TYP. MAX. MIN. TYP. MAX Intrinsic Standoff Ratio (VBB = 10 V , Transistors and Switches 2N2646, 2N2647 , GES2646, GES2647 Silicon Unijunction Transistors TO-92 TO-18 The GE/RCA 2N2646, GES2646 and 2N2647 , GES2647 Controlled Rectifiers and other applications where a , resulting in lower saturation voltage, peak-point current and 2N2647 and GES2647 are intended for , primary 2N2647 ) and in JEDEC TO-92 packages (GES2646, importance, and is ideal for use in firing circuits


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PDF 2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of
transistor motorola 2n2646

Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
Text: 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 •MAXIMUM RATINGS (TA = 25°C unless otherwise noted , /OPTO) 25E D ■b3b755S OQfiOTDl fi ■2N2646 • 2N2647 . 7-3 7-AI 'ELECTRICAL CHARACTERISTICS (Ta , (Vb2B1 = 10 V), Note 1 2N2646 2N2647 V 0.56 0.68 - 0.75 0.82 Interbase Resistance (VB2B1 = 3 V, lE = 0 , €” mA Emitter Reverse Current (vb2e = 30 v, Ibi = o) 2N2646 2N2647 'EB20 - 0.005 0.005 12 0.2 jua Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 IP - 1 1 5 2 ma Valley Point Current (VB2B1 = 20 V


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PDF b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
2N2646

Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
Text: unless otherwise noted.) 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 Rating Symbol Value Unit Power , €”10 fiF or less, 30 volts or less. http://www.bocasemi.com 2N2646 • 2N2647 „ 7-3 7- * ELECTRICAL , Standoff Ratio (VB2B1 = 10 V), Note 1 2N2646 2N2647 V 0.56 0.68 — 0.75 0.82 Interbase Resistance (VB2B1 , ) lB2(mod) — 15 — mA Emitter Reverse Current (VB2E = 30 v, Ibi = o) 2N2646 2N2647 'EB20 — 0.005 0.005 12 0.2 juA Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 IP — 1 1 5 2 MA Valley


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PDF 2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
2004 - Not Available

Abstract: No abstract text available
Text: LivePerson l l l l Submit ¡ ¡ ¡ 2N2647 Availability Buy 2N2647 at our online store ! 2N2647 Information Cate gory » Thyristors Class » Unijunction Transistors Type » PN (N -Type Base) 2N2647 Specifications Milita ry/High-R e l : N Absolute Max . Powe r Diss. (W ) : 300m Intrinsic Sta


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PDF 2N2647 STV3208
2010 - 2n2647

Abstract: transistor 2n2647
Text: 2N2647 Silicon Unijunction Transistor. 30V - 50mA. 1.29 Thyristors Uni. http://store.americanmicrosemiconductor.com/ 2n2647.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N2647 2N2647 Silic o n Unijunc t io n Trans is t o r. 3 0 V - 5 0 m A. Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find , Save: Americanmicrosemi 2N2647 $ 1.61 Information Spec Sheets Tutorials Shipping FAQs $ 1.29


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PDF 2N2647 com/2n2647 2N2647 transistor 2n2647
UJT 2N2646

Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2647 SCR firing inverter circuit 2N2646 UJT 2N2646 ratings UJT 2N2646 RANGE
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , ~ 2N264S 4.7- 9.1 .56-,75 12 30 General purpose. 2N2647 4.7- 9.1 .68.82 0.2 30 For long timing , Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new , guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter , . This specification on the 2N2646 and 2N2647 is used to ensure a minimum pulse amplitude for


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PDF 2N489-494â 2N2646-47â 26B-2N2647-HI UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2647 SCR firing inverter circuit 2N2646 UJT 2N2646 ratings UJT 2N2646 RANGE
GES2646

Abstract: 2N2646 Vp GES2647 2n2646 Unijunction transistor 2N2646 of 2n2646 to 92 2n2647 2N2646 TO-92 2n2646 of symbol transistor 2N 2646
Text: r bbo 2N2646|GES2646 MIN. 0.56 4.7 - 2N2647.GES2647 MIN. 0.68 4.7 - UNITS - TYP, 0.69 , and Switches 2N2646, 2N2647 , GES2646, GES2647 Silicon Unijunction Transistors TO-92 TO-18 C , E S 2 6 4 6 GES2647) pacKages ^ t b ^ 4 b , Th e G E /R C A 2N2646, G E S 2 6 4 6 and 2N2647 , G E , " Unijunction Transistors and Switches - 2N2646, 2N2647 , GES2646 , 2N2646 and 2N2647 is used to ensure a minimum pulse amplitude for applications in S C R firing circuits


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PDF 2N2646, 2N2647, GES2646, GES2647 -4257I GES2646 2N2646 Vp 2n2646 Unijunction transistor 2N2646 of 2n2646 to 92 2n2647 2N2646 TO-92 2n2646 of symbol transistor 2N 2646
2N2646

Abstract: Unijunction transistor 2N2646 of 2N2646 Vp 2N2647 rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 Maa 435 2N2646 -pin configuration
Text: Datasheet Central Semiconductor corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTOR JEDEC TO-18 CASE* DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2646, 2N2647 types are silicon PN unijunction transistors designed for general purpose industrial applications , »Conforms to JEDEC TO-18 outline except for lead configuration. 2N2647 VQB1 TEST CIRCUIT UNIT mW mA A V


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PDF 2N2646 2N2647 2N2646, 2N2647 100fi 2N2646 Unijunction transistor 2N2646 of 2N2646 Vp rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 Maa 435 2N2646 -pin configuration
1999 - 2N2647

Abstract: unijunction transistor
Text: 2N2647 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2647 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Application PACKAGE STYLE TO-18 (MOD) MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 2.0 A (PULSED) 30 V 300 m W @ TC = 25 OC -65 OC to +125 OC -65 OC to +150 OC 33 OC/W CHARACTERISTICS SYMBOL rBB rBB TC = 25 C O NONEd TEST CONDITIONS V V B2B1 MINIMUM 0.68 4.7 TYPICAL MAXIMUM 0.82 9.1 0.9 UNITS -K %/°C V mA =


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PDF 2N2647 2N2647 unijunction transistor
Not Available

Abstract: No abstract text available
Text: m 2N2647 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2647 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Application PACKAGE STYLE TO -18(M O D ) MAXIMUM RATINGS lc 2.0 A (PULSED) 30 V VC E P 300 m W @ Tc = 25 °C T, -65 °C to +125 °C 1 DIS S "^ "s T G -65 °C t o +150 °C Ö jc 33 °C/W CHARACTERISTICS t c = 2 5 ° c SYMBOL TEST CONDITIONS *1 V I"b b V arB B V EB


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PDF 2N2647 2N2647
2N2646 motorola

Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
Text: Uniformity 2N2646 2N2647 PN UJTs · M A X IM U M R A T IN G S IT a = 25°C u n le ss otherw ise noted , S/ OP TO ) 2N2646 · 2N2647 25E D b 3 b 7 5 5 5 OOflOTDl f i ^ m + t


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PDF b3b755S 2N2646 2N2647 2N2646 motorola 2N2647 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
2N2647

Abstract: No abstract text available
Text: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 · Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N2647 - Central Semiconductor 2N2647 -


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PDF 610-2N2647 2N2647 2N2647
2N2160

Abstract: 2N6027 2N2647 2N2646 2N6028 T018 T092 2n2646-met 2n2647-met
Text: OAHonepexoAHbie TpaH3MCTopbi B an^aBMTHOM nopaflKe Koa: R(BBO) l(V) min. l(p) max. V (OB1)mln. P max. Kopnyc @V(BB) = 3B Valley MaKC. TOK Mmh. nMKOB. MaKC. @ l(E) = 0 current BKniOHeHMfl Hanpa^eHMe MO^- ConpOTMBflGHMG Mmh. tok Ha 6a3e 1 HOCTb Mewfly 6a3aMM BblKniOHeHMfl [kOm] [mA] [mkA] [B] [Br] 2N2160 4,0-12,0 8 25 3 0,3 T05 2N2646-MET 4,7-9,1 4 5 3 0,3 T018 2N2647-MET 4,7-9,1 8 2 6 0,3 T018 Ugar l(a) l(v)mln. V(output)mln. Pmax. Kopnyc 06paTHoe MaKC. TOK @Rg=10KOM Mmh


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PDF 2N2160 2N2646-MET 2N2647-MET 06paTHoe 10KOM 2N6027 2N6028 2N2647 2N2646 T018 T092
ujt transistor 2n2160

Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , ~ 2N264S 4.7- 9.1 .56-,75 12 30 General purpose. 2N2647 4.7- 9.1 .68.82 0.2 30 For long timing


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PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
2N2646

Abstract: 2N4870 2N4871 AD 277 2N2647 KT132A KT133A KT132B
Text: OflHonepexoAHbie ôwnoëapHbie TpaH3MCTopû OôoçHaneHèe Aíanor Pmax (Bt) UMeœ.ôaç. max (B) la èMn. ( A ) la o6p. ( mkA ) UocTaT. ( B ) h Toêa Kopnyc KT132A KT132B 2N2646 2N2647 0,3 35 2,0 12,0 0,2 0,7-3,5 0,56-0,75 0,68-0,82 Case22A-01 KT133A KT133B 2N4870 2N4871 0,3 35 1,5 1,0 0,7-2,5 0,56-0,75 0,70-0,85 KT-26 m "3aBofl TPAH3ÈCTOP" PecnyôëMKa Benapycb, 220064, t.Mmhck, yn.KopœeHeBCKoro E-mail: trdir@integral.minsk.by KATAËOTnPOflYKÖMM TeneôoH: (8-017) 277-44-41 Teneôaêc


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PDF KT132A KT132B 2N2646 2N2647 Case22A-01 KT133A KT133B 2N4870 2N4871 KT-26 AD 277
2N2160

Abstract: 2n2647 2N2646 2n2647-met T092 T018 2N6028 10KOM 2N6027 2N2646-MET
Text: www.i-t.su ¡nfo@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics OAHonepexoAHbie TpaH3MCTopbi B an$aBMTHOM nopaflKe KoA: R(bbo) l(V) min l(p)max V(ob1)mir Pma* Kopnyc @ V(bb) =3B Tok l/lMnynbCH. l/lMnynbCH. Mo^- @l(E)=0 BbiKn. TOK Hanpa^eHMe HOCTb ConpoTMBn. Mewfly 3MMTTepa 6a3bi 1 6a30M 1 m 6a30M 2 [kOm] [mA] [mkA] [B] [Br] 2N2160 4,0-12,0 8 25 3 0,3 T05 2N2646-MET 4,7-9,1 4 5 3 0,3 T018 2N2647-MET 4,7-9,1 8 2 6 0,3 T018 U(ba) I (a) l(v)mir ^(ojtpjt)min


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PDF 6a30M 2N2160 2N2646-MET 2N2647-MET 10KOM 2N6027 2N6028 2n2647 2N2646 T092 T018 10KOM
UJT 2N2646

Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt 22A01 UJT 2N2646 oscillators ujt transistor
Text: 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 0.56 0.70 0.56 0.68 0.56 0.70 0.70 0.75 0.85 0.75 0.82


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PDF ITO-92) MUS4987 MUS4988 IeB20 2A-01 2N4870 2N4871 2N2646 2N2647 2N4851 UJT 2N2646 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt 22A01 UJT 2N2646 oscillators ujt transistor
UJT 2N2646

Abstract: 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt applications of ujt with circuits ujt timer CIRCUIT
Text: 2N2647 0.68 0.82 2.0 0.2 8.0 TO-220AB £n (TO-18) JL¿ PROGRAMMABLE UNIJUNCTION


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PDF O-226AA 2N2646 2A-01 2N2647 O-220AB 2N6027 2N6028 MBS4991 O-226AA UJT 2N2646 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt applications of ujt with circuits ujt timer CIRCUIT
2N4148

Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N2646 2N4147
Text: 2N4082 2N4216 2N4904 2N2646 2N3227 2N3792 2N4083 2N4217 2N4905 2N2647 2N3330 2N3810 2N4111 2N4218


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PDF 2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299 2N2483 2N3002 2N3731 2N4003 2N4148 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2n4146 transistor 2n2706 2N2646 2N4147
2N2646 equivalent

Abstract: SUS-2N4989 3n84 3N81 2N4991 D5K2 2N4988 20 amp 800 volt triac EQUIVALENT 2N1671 2N4983
Text: , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , triggering at gate. 8kHz 4kHz OSCILLATOR 2kHz I2K •oi : Siookf 2N2647 ^ , 470 pF ; ion Ã


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PDF 2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 3n84 3N81 2N4991 D5K2 2N4988 20 amp 800 volt triac EQUIVALENT 2N1671 2N4983
2N4893

Abstract: 2N4894 UJT 2N4871 UJT 2N4852 transistor 2n4871 90VSS 2n4852 ujt 2n2647 2N4949 2N4853
Text: M O T O R O L A SC O I O D E S / O P T O J 34 De | b3b7255 0G3Ö1S0 D S 6367255 MOTOROLA SC (DIODES/OPTO) 34C 38150 D SELICON THYRISTOR DIE (continued) ^ -3 5 -3 j die n o . 2C4871 LINE SOURCE - DTL58 Device assembled from this die type are similar to the fol lowing device types: 2N2647 2N39B0 2N4852 2N4853 2N4871 2N4893 2N4894 2N4949 MU4893 MU4894 UJT - Unijunction Transistor METALLIZATION - Top .


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PDF b3b7255 2C4871 DTL58 2N2647 2N39B0 2N4852 2N4853 2N4871 2N4893 2N4894 UJT 2N4871 UJT 2N4852 transistor 2n4871 90VSS ujt 2n2647 2N4949
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