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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N2369AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon,
2N2369A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
2N2369A Microsemi Corporation Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
2N2369AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon,
2N2369AU Microsemi Corporation Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6
2N2369A LEAD FREE Central Semiconductor Corp TRANS NPN 15V 0.2A TO-18
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N2369 New Jersey Semiconductor Products, Inc. Bristol Electronics 95,601 - -
2N2369 STMicroelectronics ComS.I.T. 360 - -
2N2369 SPC Multicomp Newark element14 54 $0.62 $0.22
2N2369 SPC Multicomp element14 Asia-Pacific 6,579 $0.68 $0.30
2N2369 Rochester Electronics - - -
2N2369 STMicroelectronics Chip One Exchange 3,000 - -
2N2369 SPC Multicomp Farnell element14 4,572 £1.12 £0.32
2N2369 Motorola Semiconductor Products Bristol Electronics 187 $1.50 $0.48
2N2369 STMicroelectronics Bristol Electronics 3 - -
2N2369 Unknown Bristol Electronics 67 - -
2N2369 NS Bristol Electronics 23 - -
2N2369 Fairchild Semiconductor Corporation Bristol Electronics 38 $1.50 $0.97
2N2369 Continental Device India Ltd TME Electronic Components 374 $0.57 $0.20
2N2369A Motorola Semiconductor Products New Advantage Corporation 47 - -
2N2369A SPC Multicomp Farnell element14 - £1.06 £0.30
2N2369A Microsemi Corporation Richardson RFPD - $3.05 $2.90
2N2369A SPC Multicomp Newark element14 1,892 $1.18 $0.43
2N2369A Continental Device India Ltd TME Electronic Components 788 $0.63 $0.21
2N2369A Microsemi Corporation Chip1Stop 2,023 $3.79 $3.79
2N2369A STMicroelectronics Chip One Exchange 600 - -
2N2369A Motorola Semiconductor Products Chip One Exchange 1,000 - -
2N2369A Central Semiconductor Corp Future Electronics 40 $1.44 $1.03
2N2369A Continental Device India Ltd ComS.I.T. 3,000 - -
2N2369A SPC Multicomp element14 Asia-Pacific 15,249 $0.61 $0.32
2N2369A Central Semiconductor Corp TME Electronic Components 35 $2.11 $1.45
2N2369A Chip One Exchange 17 - -
2N2369A/TR Microchip Technology Inc Avnet - $3.29 $2.89
2N2369ACSM TT Electronics Power and Hybrid / Semelab Limited Allied Electronics & Automation - $20.64 $18.72
2N2369ACSM TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD - - -
2N2369ACSM TT Electronics Power and Hybrid / Semelab Limited RS Components 17 £16.96 £15.64
2N2369ACSM-QR-B TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD 10 $32.66 $30.25
2N2369AJAN Microchip Technology Inc Avnet - $5.59 $4.99
2N2369AJAN National Semiconductor Corporation Rochester Electronics 2 $0.45 $0.37
2N2369AUAJAN Microchip Technology Inc Avnet - $31.79 $28.39
2N2369ZL1 STMicroelectronics Chip One Exchange 155 - -
JAN2N2369A Microsemi Corporation Chip1Stop 8 $5.70 $5.48
JAN2N2369A Microsemi Corporation Future Electronics - $7.06 $5.17
JANS2N2369A/TR Microchip Technology Inc Avnet - $81.59 $54.69
JANS2N2369AU Microchip Technology Inc Avnet - - -
JANS2N2369AUB Semicoa Semiconductors Chip1Stop 372 $86.21 $81.54
JANSF2N2369AU Microchip Technology Inc Avnet - $96.29 $79.39
JANSF2N2369AUB Microsemi Corporation Chip1Stop 49 $126.05 $123.87
JANTX2N2369A Microsemi Corporation New Advantage Corporation 1,844 $15.36 $14.33
JANTX2N2369A Microsemi Corporation Future Electronics 1,704 $7.97 $5.83
JANTX2N2369A Chip One Exchange 12 - -
JANTX2N2369A CRP New Advantage Corporation 1 - -
JANTX2N2369AUB Microsemi Corporation Chip1Stop 39 $23.93 $20.42
JANTXV2N2369A Microsemi Corporation Future Electronics 54 $8.34 $6.67
JANTXV2N2369A Microsemi Corporation New Advantage Corporation 1 - -
JANTXV2N2369A Microsemi Corporation Chip1Stop 797 $7.36 $7.03
P2N2369ZL1 ON Semiconductor Rochester Electronics 3,030 $0.05 $0.04
P2N2369ZL1G ON Semiconductor Rochester Electronics 40,000 $0.05 $0.04

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2N2369 datasheet (177)

Part Manufacturer Description Type PDF
2N2369 Boca Semiconductor NPN SILICON PLANAR EPITAXIAL TRANSISTORS - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 Motorola Bipolar Transistor, NPN Silicon Switching Transistor - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 Motorola Switching Transistors - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 On Semiconductor General Purpose Bipolar Transistor, NPN, 15V, TO-18, 3-Pin - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 Philips Semiconductors NPN switching transistor - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
2N2369 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 STMicroelectronics HIGH-FREQUENCY SATURATED SWITCH - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
2N2369 Various Russian Datasheets Transistor Original PDF
2N2369 Bharat Electronics Transistor Selection Guide Scan PDF
2N2369 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
2N2369 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N2369 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N2369 Fairchild Semiconductor NPN high speed saturated switch. - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=400M / Pwr(W)=0.36 Scan PDF
2N2369 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
2N2369 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N2369 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
2N2369 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N2369 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N2369 General Diode Transistor Selection Guide Scan PDF
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2N2369 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N2369 equivalent

Abstract: 2N2369 MA 4108 2N2369A MOTOROLA 2N2368 2N3227 MOTOROLA 2N3227 2N2369A J 2N2369 St 2N2369
Text: to +200 °C 2N2368 , 2N2369 , A 2N3227 2N2369A JAN, JTX JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO , ) 2N2368, 2N2369 , 2N2369A 2N3227 v(BR)EBO 4.5 6.0 - Vdc Collector Cutoff Current (Vce = 20 Vdc, Vbe = 3.0 , ICBO - 0.4 0.2 pAdc (Vcb = 20 Vdc, ig = 0, Ta = 150°C) 2N2368, 2N2369 , 2N2369A 2N3227 - 30 50 , -° Vdc) 2N2368 2N2369 2N2369A 2N3227 hFE 20 40 100 60 120 120 300 dc = 10 mAdc, Vce = 1'° Vdc, Ta = , Voltage(1) VcE(sat) Vdc dc = 10 mAdc, Ib = 1.0 mAdc) 2N2368, 2N2369 , 2N3227 — 0.25 2N2369A â


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PDF 2N2368 2N3227 2N2369A, 2N2368 2N2369 2N2368, 2N2369 equivalent MA 4108 2N2369A MOTOROLA 2N3227 MOTOROLA 2N2369A J 2N2369 St 2N2369
1996 - 2n2369

Abstract: No abstract text available
Text: Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A * NPN Silicon *Motorola Preferred , = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 Vdc, VBE = , © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 — 120 120 (IC , mAdc, VCE = 1.0 Vdc) 2N2369A 20 — (IC = 100 mAdc, VCE = 2.0 Vdc) 2N2369 20 â


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PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2n2369
1996 - 2N2369A

Abstract: 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
Text: Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A * NPN Silicon *Motorola Preferred , Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL , 2N2369 2N2369A 40 - 120 120 (IC = 10 mAdc, VCE = 1.0 Vdc, TA = ­55°C) 2N2369 20 - , Vdc) 2N2369 20 - 2N2369 2N2369A - - 0.25 0.20 (IC = 10 mAdc, IB = 1.0 mAdc


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PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369A 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
1996 - 2N2369

Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 equivalent 2N2369 motorola 2N2369 datasheet 1N916 J 2N2369 2N3227 MOTOROLA 2N3227
Text: Transistors 2N2369 2N2369A * NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 , , IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A Collector Cutoff Current (VCE = 20 , Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 40 - , 100 mAdc, VCE = 1.0 Vdc) 2N2369A 20 - (IC = 100 mAdc, VCE = 2.0 Vdc) 2N2369 20


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PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369 2N2369A 2N2369A MOTOROLA 2N2369 equivalent 2N2369 motorola 2N2369 datasheet 1N916 J 2N2369 2N3227 MOTOROLA 2N3227
2N2369

Abstract: 2N2369 equivalent 2n2369a 2N3227
Text: ) Motorola Small-Signal Transistors, FETs and Diodes Device Data 3-21 2N2369.A FIGURE B - MAXIMUM , Vdc, V be = ON CHARACTERISTICS DC Current Gain(1) (lç = 10 mAdc, Vce ~ 1.0 Vdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 40 - 20 20 30 120 120 - - ^ Symbol j Min | Max [ Unit j V(BR)CES VCEOisusJ V 2N2369 2N2369A *CES 2N2369A *b 2N2369A 40 15 40 , ) 2N2369A 2N2369 (VcE(sat) 2N2369 2IM2369A 2N2369A 2N2369A 2N2369A VßE(sat) AH Types 2N2369A 2N2369A 2N2369A


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PDF 2N2369 2N2369 equivalent 2n2369a 2N3227
2004 - 2N2369

Abstract: 2N2369At
Text: 2N2369 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2369 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2369 at our online store! 2N2369 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2369 Information Did you Know , Test Houses 2N2369 Specifications Military/High-Rel : N V(BR)CEO (V) : 15 V(BR)CBO (V) : 40 I(C


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PDF 2N2369 2N2369 STV3208 LM3909N 2N2369At
2N2369

Abstract: 2N2369 equivalent
Text: Switching Transistors NPN Silicon COLLECTOR 2N2369 2N2369A * 3 EMITTER MAXIMUM RATINGS R ating , ICBO 2N2369 2N2369A 'c e s 2N2369A 2N2369A 40 15 40 4.5 - - - - Vdc Vdc Vdc Vdc nAdc , CHARACTERISTICS DC Current G ainO ) (I q = 10 mAdc, V q e = 1 .0 Vdc) hFE 2N2369 2N2369A 2N2369 2N2369A 2N2369A 2N2369A 2N2369 v CE(sat) 2N2369 2N2369A 2N2369A 2N2369A 2N2369A v BE(sat) All Types 2N2369A 2N2369A , 2N2369A SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369 , 2N3227 +10.6 v -° - 1 . 5 ^ < 1 ns


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PDF 2N2369 2N2369A* 2N2369/D 2N2369 equivalent
2n2369a

Abstract: 2N2369 2N2369A MOTOROLA 2N2369 equivalent Lg 32lx2r-me
Text: uty Cycle « 2.0%. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-25 2N2369.A SWITCHING , = 10 m Adc, V c e h FE 1.0 Vdc) 2N2369 2N2369A - 55°C) -5 5 T ) 2 N 2369 2N2369A 2N2369A 40 - 20 20 30 120 120 2N2369 2N2369A 'CES 2N2369A >B 2N2369A - 0.4 ¿¿Ade V(BR)CES VCEO(sus) VfBRICBO v (BR)EBO , = 10 m Adc, lg = 1.0 m Adc) 2N2369A 2N2369 < v CE 2N2369 2N2369A 2N2369A 2N2369A 2N2369A v BE , 200 Unit Vdc Vdc Vdc Vdc mA mA 2N2369 ,A* CASE 22-03, STYLE 1 TO-18 (TO-206AA) THERMAL


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PDF 2N2369 O-206AA) 2n2369a 2N2369A MOTOROLA 2N2369 equivalent Lg 32lx2r-me
2n2369

Abstract: 2N2369A 2N2369 transistor transistor 2n2369
Text: Œ\ME£w 2N2369 2N2369A * "also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN , -18 MAXIMUM RATINGS RATINGS SYMBOL 2N2369 1 2N2369A UNITS Collector-Emitter Voltage ^CEO 15 Vdc , 2N2369 VCE = Rated VCB, IE =0, TA = 150°C 2N2369A IcBO 0.4 30 |xAdc nAdc Emitter-Base Breakdown , 1.0 Vdc 2N2369 Ic = 10 mAdc, VCE = 1.0 Vdc 2N2369A hFE 40 120 120 Collector-Emitter Saturation Voltage Ic = 10 mAdc, IB = 1.0 mAdc 2N2369 Ic= 10 mAdc, I„ = 1.0 mAdc 2N2369A ^CE(sat) 0.25 0.20 Vdc


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PDF 2N2369 2N2369A* 2N2369A 2N2369 transistor transistor 2n2369
2N2369

Abstract: 2N2369A NPN/2N2369
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369 /A are NPN , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , toff Storage Time ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0


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PDF 2N2369 2N2369A 2N2369/A T100mA, 300us, 2N2369 2N2369A NPN/2N2369
2N2369

Abstract: 2N2369 transistor J 2N2369 2N2369A
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369 /A are NPN , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , toff Storage Time ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 - >500


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PDF 2N2369 2N2369A 2N2369/A 300us, 2N2369 2N2369 transistor J 2N2369 2N2369A
2004 - 2369A

Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
Text: 2N2369 2N2369A 31/05/05 V1.0 2N2369 , 2369A High Speed Switching Transistors Notes , 2N2369 , 2369A High Speed Switching Transistors Features: · NPN Silicon Planar Epitaxial , . · 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High , .0 2N2369 , 2369A High Speed Switching Transistors Absolute Maximum Ratings Parameter Symbol VCEO , Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain 2N2369


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PDF 2N2369, 2N2369/A 2369A 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
2n2369

Abstract: PN2369 2N2369 SOT-23
Text: 2N2369 /PN2369/MMBT2369/MPQ2369 V glNational JuM Semiconductor 2N2369 PN2369 MMBT2369 MPQ2369 U // T °-'8 T L /G /1 0 1 0 0 -9 Eg U C U^ ffi/ T °-9 2 T L /G /1 0 1 0 0 -1 TO- 236 (SOT- 23) T L /G /1 0 1 0 0 -5 T L / G / , 0 00-7 , NPN Switching Transistor Electrical Characteristics t a Symbol OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR|CBO V(BR)EBO ICBO Collector-Emitter , , Vc = 10 Vdc, f = 100 MHz) 5.0 4.0 pF 10-14 2N2369 /PN2369/MMBT2369/MPQ2369 NPN Switching


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PDF 2N2369/PN2369/MMBT2369/MPQ2369 2N2369 PN2369 MMBT2369 MPQ2369 10/iA 20Vdc, 2N2369 SOT-23
2001 - 2N2369 transistor

Abstract: J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching , ) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 Collector , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


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PDF 2N2369 2N2369A 2N2369/A C-120 2N2369 transistor J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
2001 - J 2N2369

Abstract: 2N2369 2N2369A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


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PDF 2N2369 2N2369A 2N2369/A C-120 J 2N2369 2N2369 2N2369A
1994 - 2N2369

Abstract: transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
Text: 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching , 1/4 2N2369 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case , = 300 µs, duty cycle = 1 %. 2/4 0.2 2N2369 TO-18 MECHANICAL DATA mm inch DIM , 0.045 L 45o 45o D A G I E F H B L C 0016043 3/4 2N2369


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PDF 2N2369 2N2369 transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
2N2369

Abstract: J 2N2369 2N2369A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369 /A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB , ts 2N2369 >20 2N2369 /2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 MHZ pF <12


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PDF ISO/TS16949 2N2369 2N2369A 2N2369/A C-120 2N2369 J 2N2369 2N2369A
1997 - 2N2369

Abstract: transistor 2n2369 BP317 J 2N2369
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product , Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES , NPN switching transistor 2N2369 LIMITING VALUES In accordance with the Absolute Maximum Rating , Product specification NPN switching transistor 2N2369 CHARACTERISTICS Tj = 25 °C unless , oscilloscope Philips Semiconductors Product specification NPN switching transistor 2N2369


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PDF M3D125 2N2369 MAM264 SCA54 117047/00/02/pp8 2N2369 transistor 2n2369 BP317 J 2N2369
2N2369 equivalent

Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 motorola semiconductor handbook transistor 2n2369 2N3221
Text: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL " @ , ) lCBO 2N2369 2N3227 (VCB = 20 Vdc, TA = 150°C) Min Base Cutoff Current (vcE = 20 Vdc, vOB = 3 Vdc) 2N3227 CoHector-Base Bretidom (1c = 10v Adc, IB = o) BVEBO i BVCEO* 2N2369 , :2$B=1;:Lc) (Ic = 10 mAdc, VCE = 1.0 Vdc) 2N2369 2N3227 12 2N2369 2N3221 (Ic = 10 , , VCE = 2 Vdc) 2N2369 Small Signal Current Gtin (Ic = 10 mAdc, VCE = 10 Vdc, f = 100 mc) Output


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PDF 2N2369 2N3227 2N2369 equivalent 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 motorola semiconductor handbook transistor 2n2369 2N3221
transistor 2n2369

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN switching transistor FEATURES · Low current (max. 200 mA) · Low voltage (max. 15 V). PINNING PIN 1 2 APPLICATIONS · High-speed switching · VHF amplification. DESCRIPTION NPN switching transistor in a TO-18 metal package. 3 emitter base 2N2369 , Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VcEO V EBO 2N2369 PARAMETER collector-base , 2N2369 PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS lE =


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PDF 2N2369 transistor 2n2369
2010 - 2N2222B

Abstract: 2N2244 2N1104 2sc1449 BC175 LOW-POWER SILICON NPN 2N2362 rca 2N2270 2N2359 2N2306
Text: /51 2N2369 CSR Indus Inti Diode PPC Producl 2N2369 /51 2N2369 /KVT 2N2369 /TNT 2N2369 /TPT 2N2369A CSR


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PDF 2SCS02 BFY50 BFX50 NB311E NB311F NB311X NB311Y TP5189 2N1104 2N2222B 2N2244 2sc1449 BC175 LOW-POWER SILICON NPN 2N2362 rca 2N2270 2N2359 2N2306
2N2222A itt

Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 2N914 2N2369A BSY87 2n2222a fairchild
Text: 2N2369 40 15 500 40 2N2369A 40 15 500 40 10 10 10 1 10 100 100 1 10 10 10 10 Characteristics @ 25 , ‰0-60 10 _ 400 19154H 65 2N2369 0.36 40 0.1-100 40-120 10 — 500 19155F 65 2N2369A 0.36 40 0.1-100 , 120 10 0.25 10 500 4.0 35251F 65 2N914 15 360 20 20 30 120 10 0.25 20 300 6.0 35252D 65 2N2369 15 360 13 10 40 120 10 0.25 10 500 4.0 35253B 65 2N2369A 15 360 13 10 40 120 10 0.2 10 500 4.0 35254X 65


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PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2N2222A itt itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild
PD9002

Abstract: comparison cd 4093 stanag LISTING SCCB spec smd code marking a3a ultrasonic flaw detector stanag smd code marking a4a SMD a3a CECC - Detail Specifications
Text: permits. Ordering Information: (examples) Part Number Description Marking (*) 2N2369-JQR QR205 groups A,B 2N2369-JQR 2N2369-JQRB QR205 groups A,B 2N2369-JQRB 2N2369-JQRA QR205 groups A,B Screening to QR204 level B 2N2369-JQRA Screening to QR204 level A 2N2369-JQRS Space , A,B 2N2369-JQRS-C QR217 groups A,B and group C. Screening to QR216 2N2369-JQRS 2N2369-JQRS-CD , with Data Pack 2N2369-JQRS-PCD QR217 groups A,B and group C. Screening to QR216 2N2369-JQRS


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PDF 168hrs PD9002 comparison cd 4093 stanag LISTING SCCB spec smd code marking a3a ultrasonic flaw detector stanag smd code marking a4a SMD a3a CECC - Detail Specifications
2000 - smd diodes s4 1.5w

Abstract: marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
Text: . Ordering Information: (examples) Part Number 2N2369-JQR 2N2369-JQRB 2N2369-JQRA 2N2369-JQRS Description , Marking (*) 2N2369-JQR 2N2369-JQRB 2N2369-JQRA 2N2369-JQRS 19 DOC 2624 ISS 5 MIL-PRF , (suffix P) (suffix D) (suffix C) Ordering Information: (examples) Part Number 2N2369-JQRS 2N2369-JQRS-C 2N2369-JQRS-CD 2N2369-JQRS-PCD Description QR217 groups A,B Screening to QR216 Marking (*) 2N2369-JQRS 2N2369-JQRS 2N2369-JQRS 2N2369-JQRS QR217 groups A,B and group C. Screening to QR216 QR217 groups A,B


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PDF IRF130SMD05N IRFN130SMD05 IRF130SMD05 IRF130SMD05" IRF130SMD05 IRF130SMD05DSG O276AA) 650pF smd diodes s4 1.5w marking code PAD1 SMD U3158 GENERAL SEMICONDUCTOR SMD DIODES s4 PD9002 smd diode marking f4 diode smd marking GPO 27 lvt 817 smd code marking a3a
2N2369

Abstract: 2N2369 transistor 2N3227 2N708 MMCF2369 MMCF3227 MMCF708 transistor 2n708
Text: MMCF708 (SILICON) MMCF2369 MMCF3227 FLIP-CHIP NPN SWITCH AND AMPLIFIER TRANSISTORS Flip-Chip — NPN silicon Annular transistor family for low-current, high-speed switching applications similar to the 2N708, 2N2369 and 2N3227. Primary Electrical Features: • High speed switching characteristics similar to 2N2369. MAXIMUM RATINGS Rating Symbol MMCF708 MMCF2369 MMCF3227 Unit Collector-Emitter Voltage vCEO 15 15 20 Vdc Collector-Emitter Voltage VCES - 40 40 Vdc Collector-Base Voltage VCB


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PDF MMCF708 MMCF2369 MMCF3227 2N708, 2N2369 2N3227. 2N2369. MMCF708 MMCF3227 2N2369 transistor 2N3227 2N708 transistor 2n708
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