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JAN2N2329S Microsemi Corporation Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-5, 3 PIN
JANTXV2N2329S Microsemi Corporation Silicon Controlled Rectifier, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, TO-5, 3 PIN
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2N2329 Solid State Devices Inc (SSDI) Bristol Electronics 10 $10.75 $5.38
2N2329 Solid State Manufacturing Allied Electronics & Automation 15 $6.23 $5.69
2N2329 Central Semiconductor Corp Avnet - $5.49 $4.99
2N2329 New Jersey Semiconductor Products, Inc. Bristol Electronics 585 - -
2N2329A New Jersey Semiconductor Products, Inc. Bristol Electronics 610 - -
2N2329A Solid State Manufacturing Allied Electronics & Automation - $6.23 $5.69
2N2329AJANTX Cobham Semiconductor Solutions Avnet - - -
2N2329AJANTXV Cobham Semiconductor Solutions Avnet - - -
2N2329ASJANTX Cobham Semiconductor Solutions Avnet - - -
2N2329ASJANTXV Cobham Semiconductor Solutions Avnet - - -
2N2329JAN Cobham Semiconductor Solutions Avnet - - -
2N2329JANTX Cobham Semiconductor Solutions Avnet 134 - -
2N2329JANTXV Cobham Semiconductor Solutions Avnet - - -
2N2329SJANTX Cobham Semiconductor Solutions Avnet 26 - -
2N2329SJANTX Microwave Semiconductor ComS.I.T. 205 - -
2N2329SJANTXV Cobham Semiconductor Solutions Avnet - - -
JAN2N2329A Cobham Semiconductor Solutions Avnet - - -
JAN2N2329AS Cobham Semiconductor Solutions Avnet - - -
JAN2N2329S Cobham Semiconductor Solutions Avnet - - -
JAN2N2329S Microsemi Corporation Chip1Stop 882 $22.82 $19.39
JANTX2N2329 Microsemi Corporation Chip1Stop 678 $87.03 $85.71
JANTX2N2329 Microsemi Corporation Bristol Electronics 9 $46.80 $46.80
JANTX2N2329A Microsemi Corporation Chip1Stop 1,648 $75.03 $66.81
JANTX2N2329S Microsemi Corporation Chip1Stop 105 $75.42 $67.16

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2N2329 datasheet (61)

Part Manufacturer Description Type PDF
2N2329 Central Semiconductor Leaded Thyristor SCR Original PDF
2N2329 Microsemi Silicon Controlled Rectifier Original PDF
2N2329 Semelab Bipolar NPNP Device in a Hermetically Sealed TO39 Metal Package Original PDF
2N2329 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
2N2329 General Electric Semiconductor Data Book 1971 Scan PDF
2N2329 General Electric Semiconductor Data Handbook 1977 Scan PDF
2N2329 Microsemi Scan PDF
2N2329 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N2329 Motorola The European Selection Data Book 1976 Scan PDF
2N2329 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N2329 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N2329 Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
2N2329 Others GE Transistor Specifications Scan PDF
2N2329 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2N2329 Others Cross Reference Datasheet Scan PDF
2N2329 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2329 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2329 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2329 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2329 Others Short Form Datasheet and Cross Reference Data Scan PDF

2N2329 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N2324

Abstract: 2N2329 2N2323 2N2326 2N2324 JANTXV 2N2326S 2N2329S 2N2324A application 2N2323 2n2328
Text: 2N2326A 2N2326AS 2N2328 2N2328S 2N2328A 2N2328AS JAN JANTX JANTXV 2N2329 2N2329S , Vdc VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru , 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS Max. Unit IFBX1 10 µAdc IKG 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS , thru 2N2329 and 2N2323S thru 2N2329S dv/dt = 0.7 v/µs, R3 = 2 k 2N2323A thru 2N2328A and 2N2323AS


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PDF MIL-PRF-19500/276 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2324 2N2329 2N2323 2N2326 2N2324 JANTXV 2N2326S 2N2329S 2N2324A application 2N2323 2n2328
2013 - 2N2323A

Abstract: 2n2326 2N2329
Text: 2N2323S thru 2N2329S 2N2323A thru 2N2329A VR = 50 Vdc 2N2323AS thru 2N2329AS 2N2323, S, A, AS , , 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS , / 2N2329 , S/ Unit 2N2323A, S 2N2324A, S 2N2326A, S 2N2328A, S 2N2329A , S Reverse Voltage VRM 50 , Forward Blocking Current R2 = 1 kΩ 2N2323 thru 2N2329 R2 = 2 kΩ 2N2323S thru 2N2329S 2N2323A thru 2N2329A VR = 50 Vdc 2N2323AS thru 2N2329AS 2N2323, S, A, AS VR = 100 Vdc 2N2324, S, A


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PDF 2N2323, 2N2324, 2N2326, 2N2328 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S 2N2329S 2N2323A 2n2326 2N2329
2N2324

Abstract: 2N2323 JANTX application 2N2323 2N2326S 2N2323 2n2329s 2N2323A 2N2326 JANTX 2N2326 2N2324A
Text: ) .22 15 6 15 2N2328A, AS, AU4 300 400 500 400 (3) .22 15 6 15 2N2329 , S, U4 2N2329A , AS , 2N2329 , S, U4 2N2323A, AS, AU4 2N2324A, AS, AU4 2N2326A, AS, AU4 2N2328A, AS, AU4 2N2329A , AS, AU4 , , THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N2323, 2N2324, 2N2326, 2N2328, 2N2329 , AND S AND U4 VERSIONS, 2N2323A, 2N2324A, 2N2326A, 2N2328A, 2N2329A , AND AS AND AU4 VERSIONS, JAN, JANTX, AND JANTXV , , U4 2N2326, S, U4 2N2328, S, U4 2N2329 , S, U4 tp = 8.5 ms max 2N2323A, AS, AU4 2N2324A, AS


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PDF MIL-PRF-19500/276H 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A, 2N2324A, 2N2326A, 2N2324 2N2323 JANTX application 2N2323 2N2326S 2N2323 2n2329s 2N2323A 2N2326 JANTX 2N2326 2N2324A
2002 - 2N2328A

Abstract: 2N2324 2n2329 2N2329s JANtx 2N2324 JANTXV 2N2323 JANTX 2N2326 JANTX 2N2324A
Text: 2N2328A 2N2328AS Qualified Level 2N2329 2N2329S JAN JANTX JANTXV MAXIMUM RATINGS Ratings Sym 2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/ 2N2329 ,S Unit 2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S Reverse Voltage , VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS , thru 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS VGT1 IGT1 VGT1 , seconds dv/dt = 1.8 v/µs, R3 = 1 k 2N2323 thru 2N2329 and 2N2323S thru 2N2329S dv/dt = 0.7 v/µs, R3 = 2 k


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PDF MIL-PRF-19500/276 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2328A 2n2329 2N2329s JANtx 2N2324 JANTXV 2N2323 JANTX JANTX 2N2324A
application 2N2323

Abstract: D 4206 TRANSISTOR 2N2329 2N2323 DIODE dla 9-F 2N2324 3S74 2N2326 2N2328 2N2328A
Text: TYPES 2N2323, 2N2324, 2N2326, 2N2328, 2N2329 , 2N2323S, 2N2324S, 2N2326S, 2N2328S, 2N2329S , 2N2223A , ; following "2N2328" add •'2N2328S"; following "2N2328A" add "2N2328AS; following " 2N2329 " add " 2N2329S , RECTIFIERS), SILICON TYPES (BOTH TX AND NON-TX) 2N2323, 2N2324, 2N2326, 2N2328, 2N2329 , 2N2323A, 2N2324A , ,000 ohms; 2N2328, 2N2328A, and 2N2329 , RL = 4,000 ohms." PAGE 13 Add the following new paragraph , , 2N2326S, 2N2328S, 2N2329S , 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, D is .500 (12.70 mm) minimum, and .750


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PDF MIL-S-19500/276A 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A, 2N2324A, 2N2326A, 2N2328A application 2N2323 D 4206 TRANSISTOR 2N2329 2N2323 DIODE dla 9-F 2N2324 3S74 2N2326 2N2328 2N2328A
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 2N2322(A)-2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high , 2N2326A 2N2327 2N2327A 2N2328 2N2328A 2N2329 Peak repetitive forward voltage VDRM 25 , SEMICONDUCTORS 2N2322(A)-2N2328(A), 2N2329 SILICON CONTROLLED RECTIFIERS 1.6 AMP, PLANAR ELECTRICAL , sales@digitroncorp.com www.digitroncorp.com Rev. 20130116 DIGITRON SEMICONDUCTORS 2N2322(A)-2N2328(A), 2N2329


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PDF 2N2322 -2N2328 2N2329 MIL-PRF-19500, 2N2322 2N2322A 2N2323 2N2323A 2N2324 2N2324A
2N2329

Abstract: 2N2327 2N2328
Text: 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits . MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000 Symbol VRSM(REP) VRSM(NON-REP) IT(RMS) ITSM Ratings Peak reverse blocking voltage (1 , 2N2328 2N2329 250 300 400 V 350 400 500 V 1.6 Amp 15 Amp PGM , 2N2329 IDRM VT IGT VGT IH Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Forward «


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PDF 2N2327 2N2329 2N2327 2N2328 2N2329 2N2328
2N2323

Abstract: 2N2324
Text: Blocking Voltage, Notes 1 and 2 2N2323 2N2324 2N2326 2N2329 Non-Repetitive Peak Reverse Blocking Voltage (t · 5 ms. Notes and 2) 2N2323 2N2324 2N2326 2N2329 RMS On-State Current (All Conduction Angles , . M O T O R O LA T H Y R IS T O R D EVIC E DATA 3-14 2N2323 thru 2N2329 * MAXIMUM RATINGS -


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PDF O-205AD) 2N2323 2N2324
2008 - 2N2324

Abstract: 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 2N2328 semiconductor case marking 16
Text: 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC , Corp. 2N2326 2N2327 2N2328 2N2329 SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS


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PDF 2N2322 2N2323 2N2324 2N2325 2N2326 2N2327 2N2328 2N2329 11-December 2N2324 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 2N2328 semiconductor case marking 16
RE130

Abstract: 2n2323
Text: o d e C o m m o n to Case G lass-to-Metal B ond for M a xim u m Hermetic Seal 2N2323 thru 2N2329 , Reverse Blocking Voltage, Note 1 2N2329 Non-Repetitive Peak Reverse Blocking Voltage (Tj = 25 to 125°C) (t « 5 ms) 2N2323 2N2324 2N2326 2N2329 R M S On-State Current , 3-11 2N2323 thru 2N2329 " M A X IM U M RA TIN G S - continued (Tc = 25°C unless otherwise noted


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PDF 2N2323 2N2329 2N2324 2N2326 2N2329 RE130
SCR C106Y1

Abstract: 1N177 ge c106b1 G C106B1 2N1777A 2N1932 2N2344 C107F 2N2325 Z4XL18
Text: €” 2N1935 — — 2N2328 2N1S99 C106C1-4 C107C1-4 400 — — — — — 2N2329 - C106D1-4 CI 0701-4 , €”65 to +85°C 50V 100V .001 C5BR1200 2N2326 1.6A —65 to +85°C 100V 200V .001 C5DR1200 2N2329 1.6A â


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PDF 2N877-81 2N1929-35 2N2344-48 2N2322-29 2NI1595-99 2S-20O Z4XL12 Z4XL14 Z4XL16 Z4XL18 SCR C106Y1 1N177 ge c106b1 G C106B1 2N1777A 2N1932 2N2344 C107F 2N2325
2004 - 2N1595

Abstract: 2N2324 2N1599A 2N1595A 2n2328 2N1599 2N2323 2N2329 2N1596 2n2326
Text: SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A 2N2328 2N1599 2N1599A 2N2329 400 CS18D CS18DZ 600 CS18M CS18MZ 800 CS18N CS18NZ IGT


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PDF 2N2322 2N1595 2N1595A 2N2323 2N1596 2N1596A 2N2324 2N2325 CS18B CS18BZ 2N1595 2N2324 2N1599A 2N1595A 2n2328 2N1599 2N2323 2N2329 2N1596 2n2326
2002 - Not Available

Abstract: No abstract text available
Text: 2N2329 Dimensions in mm (inches). Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021) dia. IC = 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100


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PDF 2N2329 O205AD) 17-Jul-02
2N3555

Abstract: 2N4110 2n2344 2N6332 2N1595 2N3005 2N4212 2n2009 2N3562 2N949
Text: SFS1829 2N6337 2N2329 2N2329A 2N3276 Contact SSDI for higher voltage units.


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PDF 180mA 200mA 260mA 275mA 280mA 350mA 390mA 500mA T0-39 2N4212 2N3555 2N4110 2n2344 2N6332 2N1595 2N3005 2n2009 2N3562 2N949
BTX30-500

Abstract: btx30-100 BTX30-200 TAG606 BTX30 TAG611-800 TAG606-200 TAG606-600 2N2324A BTX30-400
Text: 300V BTX30-300 2N2328 2N2328A 400V BTX30-1+00 2N2329 2N2329A TAG611-400 TAG612-400 TAG613


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PDF 2N2322 2N2322A BTX30- 2N2323 2N2323A BTX30-100 2N2324 2N2324A TAG611-100 TAG612-100 BTX30-500 BTX30-200 TAG606 BTX30 TAG611-800 TAG606-200 TAG606-600 BTX30-400
2n1596

Abstract: 2N1595 2N2325 2N1599 2N1596A 2N1595A CS18BZ CS18B 2N2324 2N2323
Text: SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A 2N2328 2N1599 2N1599A 2N2329 400 CS18D CS18DZ 600 CS18M CS18MZ 800 CS18N CS18NZ IGT


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PDF 2N2322 2N1595 2N1595A 2N2323 2N1596 2N1596A 2N2324 2N2325 CS18B CS18BZ 2n1596 2N1595 2N2325 2N1599 2N1596A 2N1595A CS18BZ CS18B 2N2324 2N2323
2N2323

Abstract: 2N2329 CPS057 CS39-4D
Text: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 BACKSIDE ANODE 145 Adams


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PDF CPS057 CS39-4D 2N2323 2N2329 2N2329 CPS057 CS39-4D
brx49

Abstract: Thyristors BRX49 BRX44/PH
Text: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors THYRISTORS type number V rrm max. (V) LEADED TYPES 2N881/PH 2N2329 BRX44/PH BRX45/PH BRX46/PH BRX47/PH BRX48/PH BRX49/PH 200 400 30 60 100 200 300 400 ' trm max. (A) 'ts m SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS V gt 'h V GT !GT package max. (A) 6 16 6 6 6 6 6 6 min. (V) 0.8 2.0 0.9 0.9 0.9 0.9 0.9 0.9 max. (mA) max. (V) 0.8 2 0.9 0.9 0.9 0.9 0.9 0.9 max. (HA) 0.6


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PDF 2N881/PH 2N2329 BRX44/PH BRX45/PH BRX46/PH BRX47/PH BRX48/PH BRX49/PH brx49 Thyristors BRX49
2010 - Not Available

Abstract: No abstract text available
Text: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 20,000Å/5,000Å/5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223


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PDF CPS057 CS39-4D 2N2323 2N2329 CS223-4M 22-March
2002 - 2N2329

Abstract: No abstract text available
Text: 2N2329 Dimensions in mm (inches). Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 0.41 (0.016) 0.53 (0.021) dia. IC = 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100


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PDF 2N2329 O205AD) 1-Aug-02 2N2329
2N1595

Abstract: 2N2324 2N1595A 2N2325 2N2323 2N2322 2N1597 2N1596A CS18D CS18BZ
Text: SCRS (Continued) IT (AMPS) 1.0 1.6 @ Tc (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 2N2325 200 CS18B CS18BZ 2N1597 2N1597A 2N2326 250 2N2327 300 2N1598 2N1598A 2N2328 400 CS18D CS18DZ 2N1599 2N1599A 2N2329 600 CS18M CS18MZ 800 CS18N CS18NZ IGT 200JJ.A 20|iA 10mA 2.0mA 200|xA VGT 0.8V 0.8 V 2.0V 2.0 V 0.8V IH 5.0mA 5.0mA 20mA 5.0mA 2.0mA


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PDF 2N2322 2N1595 2N1595A 2N2323 2N1596 2N1596A 2N2324 2N2325 CS18B CS18BZ 2N2324 2N2325 2N2323 2N2322 2N1597 CS18D
2N2327A

Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS PACKAGE TO-39 DEVICE TYPE 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 TO-5 2N2325A 2N2326 2N2326A 2N2327 2N2327A 2N2328 2N2328A 2N2329 2N2329A VOLTS 25 50 50 100 100 150 150 200 200 250 250 300 300 400 400 V drm TO-39/TO-5 i*GM IT AMPS 80°C 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 I drm HA VOLTS 0.35/0.8 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35


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PDF 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A
New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2323 2N2323A 2N2324 2N2322 2N2325A 2N2326 2N2326A 2N2327
Text: 2N2329 400 1.6 10 0.35/0.8 200 2.0 0.1 2N2329A 400 1.6 10 0.35/0.6 20 2.0 0.1 33 bSbH^a OGDCSbO 5TT


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PDF O-39/TO-5 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A New England Semiconductor 2n2326a 2N2327
1999 - Not Available

Abstract: No abstract text available
Text: Silicon Controlled Rectifiers Page 1 of 1 Package Home Device Type VDRM Volts IT Amps 80° C IDRM mA VGT Volts IGT mA IH Ma PGM Watts TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-5 TO-5 TO-5 TO-5 TO-5 TO-5 TO-5 TO-5 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A 2N2328 2N2328A 2N2329 2N2329A 25 50 50 100 100 150 150 200 200 250 250 300 300 400 400 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 10 10 10 10 10 10 10 10 10 10 10 10 10 10


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PDF 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327
Not Available

Abstract: No abstract text available
Text: SCRS (Continued) 1.0 I (AMPS) t 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-18 CASE TO-39 VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 CS18B CS18B Z 2N1597A 2N1597 2N2326 2N2327 250 2N1598 300 400 CS18D CS18DZ 600 CS18M CS18N 2N2328 2N1599 2N1599A 2N2329 CS18M Z 800 2N1598A CS18N Z 200|iA IGT 200JJ


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PDF 2N2322 2N1595 2N1595A 2N2323 2N1596 2N1596A 2N2324 2N2325 CS18B CS18B
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