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2N2323 Motorola Semiconductor Products Bristol Electronics 3 - -
2N2323 Texas Instruments New Advantage Corporation 14 - -
2N2323 Solid State Devices Inc (SSDI) Farnell element14 197 £5.53 £5.20
2N2323 Solid State Devices Inc (SSDI) element14 Asia-Pacific 197 $8.55 $5.56
2N2323 Microsemi Corporation Chip1Stop 621 $29.63 $25.18
2N2323 Texas Instruments ComS.I.T. 17 - -
2N2323 General Electric Company Bristol Electronics 35 $10.08 $4.70
2N2323 New Jersey Semiconductor Products, Inc. Bristol Electronics 1,088 - -
2N2323 Microchip Technology Inc Avnet - - -
2N2323 Solid State Devices Inc (SSDI) Newark element14 288 $5.61 $5.13
2N2323 Solid State Manufacturing Allied Electronics & Automation 1,404 $6.23 $5.69
2N2323 Microsemi Corporation Bristol Electronics 31 $10.08 $4.70
2N2323A Toshiba America Electronic Components Bristol Electronics 7 $10.08 $6.55
2N2323A Chip One Exchange 18 - -
2N2323A New Jersey Semiconductor Products, Inc. Bristol Electronics 871 - -
2N2323A Solid State Manufacturing Allied Electronics & Automation - $6.23 $5.69
2N2323AJANTX Cobham Semiconductor Solutions Avnet - - -
2N2323AJANTX Cobham Semiconductor Solutions Avnet - - -
2N2323AS New Jersey Semiconductor Products, Inc. Bristol Electronics 1,024 - -
2N2323JAN Cobham Semiconductor Solutions Avnet 602 - -
JAN2N2323 Microsemi Corporation Bristol Electronics 8 - -
JAN2N2323A Cobham Semiconductor Solutions Avnet - - -
JAN2N2323AS Cobham Semiconductor Solutions Avnet - - -
JAN2N2323AS Cobham Semiconductor Solutions Avnet - - -
JAN2N2323S Microsemi Corporation Bristol Electronics 25 - -
JAN2N2323S Cobham Semiconductor Solutions Avnet - - -
JAN2N2323S Cobham Semiconductor Solutions Avnet - - -
JANTX2N2323A Microsemi Corporation Future Electronics - $25.14 $22.25
JANTX2N2323S Microsemi Corporation Chip1Stop 207 $74.51 $66.25

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2N2323 datasheet (70)

Part Manufacturer Description Type PDF
2N2323 Central Semiconductor Leaded Thyristor SCR Original PDF
2N2323 Comset Semiconductors Silicon Thyristors Original PDF
2N2323 Microsemi Silicon Controlled Rectifier Original PDF
2N2323 Semelab Bipolar NPNP Device in a Hermetically Sealed TO5 Metal Package Original PDF
2N2323 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
2N2323 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
2N2323 General Electric Semiconductor Data Book 1971 Scan PDF
2N2323 General Electric Semiconductor Data Handbook 1977 Scan PDF
2N2323 Microsemi Scan PDF
2N2323 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N2323 Motorola The European Selection Data Book 1976 Scan PDF
2N2323 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N2323 Others GE Transistor Specifications Scan PDF
2N2323 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2323 Others Cross Reference Datasheet Scan PDF
2N2323 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2323 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2323 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2323 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N2323 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

2N2323 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N2324

Abstract: 2N2329 2N2323 2N2326 2N2324 JANTXV 2N2326S 2N2329S 2N2324A application 2N2323 2n2328
Text: Level 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S , Vdc VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru , 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS Max. Unit IFBX1 10 µAdc IKG 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS , thru 2N2329 and 2N2323S thru 2N2329S dv/dt = 0.7 v/µs, R3 = 2 k 2N2323A thru 2N2328A and 2N2323AS


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PDF MIL-PRF-19500/276 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2324 2N2329 2N2323 2N2326 2N2324 JANTXV 2N2326S 2N2329S 2N2324A application 2N2323 2n2328
2013 - 2N2323A

Abstract: 2n2326 2N2329
Text: 2N2323S thru 2N2329S 2N2323A thru 2N2329A VR = 50 Vdc 2N2323AS thru 2N2329AS 2N2323 , S, A, AS , Forward Blocking Current R2 = 1 kΩ 2N2323 thru 2N2329 R2 = 2 kΩ 2N2323S thru 2N2329S 2N2323A , ; RL = 100 W Re = 1 kΩ 2N2323 thru 2N2329 and Re = 2 kΩ 2N2323S thru 2N2329S 2N2323A thru , 0.7 v/ms, R3 = 2 kW 2N2323A thru 2N2329A and 2N2323AS thru 2N2329AS VR = 50 Vdc 2N2323 , S, A, AS , 2.2 V(pk) IHOX - 2.0 mAdc 2N2323S thru 2N2329S 2N2323A thru 2N2329A and 2N2323AS


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PDF 2N2323, 2N2324, 2N2326, 2N2328 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S 2N2329S 2N2323A 2n2326 2N2329
2N2324

Abstract: 2N2323 JANTX application 2N2323 2N2326S 2N2323 2n2329s 2N2323A 2N2326 JANTX 2N2326 2N2324A
Text: , THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N2323 , 2N2324, 2N2326, 2N2328, 2N2329, AND S AND U4 VERSIONS, 2N2323A , 2N2324A, 2N2326A, 2N2328A, 2N2329A, AND AS AND AU4 VERSIONS, JAN, JANTX, AND JANTXV , °C/W °C/W Barometric pressure mm Hg 6 15 50 75 50 (3) .22 15 6 2N2323 , S, U4 -65 to 175 75 50 (4) .22 15 6 2N2323A , AS, AU4 50 +150 100 150 100 (3) .22 15 6 2N2324, S, U4 , specified. VFM IHOX (1) (2) VGT (1) IGT (1) VGT (2) IGT (2) 2N2323 , S, U4 2N2324, S


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PDF MIL-PRF-19500/276H 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A, 2N2324A, 2N2326A, 2N2324 2N2323 JANTX application 2N2323 2N2326S 2N2323 2n2329s 2N2323A 2N2326 JANTX 2N2326 2N2324A
application 2N2323

Abstract: D 4206 TRANSISTOR 2N2329 2N2323 DIODE dla 9-F 2N2324 3S74 2N2326 2N2328 2N2328A
Text: : Following " 2N2323 " add H2N2323S"; following " 2N2323A " add " 2N2323AS "; following "2N2324" add H2N2324S , RECTIFIERS), SILICON TYPES (BOTH TX AND NON-TX) 2N2323 , 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A , 2N2324A , TYPES 2N2323 , 2N2324, 2N2326, 2N2328, 2N2329, 2N2323S , 2N2324S, 2N2326S, 2N2328S, 2N2329S, 2N2223A , voltage test: Delete "Rl = 1000 ohms" and substitute " 2N2323 thru 2N2326 and 2N2323A thru 2N2326A, RL = 1 , (19.05 mm) maximum. 11. For transistor types 2N2323 , 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A , 2N2324A


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PDF MIL-S-19500/276A 2N2323, 2N2324, 2N2326, 2N2328, 2N2329, 2N2323A, 2N2324A, 2N2326A, 2N2328A application 2N2323 D 4206 TRANSISTOR 2N2329 2N2323 DIODE dla 9-F 2N2324 3S74 2N2326 2N2328 2N2328A
2002 - 2N2328A

Abstract: 2N2324 2n2329 2N2329s JANtx 2N2324 JANTXV 2N2323 JANTX 2N2326 JANTX 2N2324A
Text: VR = 400 Vdc 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS , 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2326S 2N2326A 2N2326AS 2N2328 2N2328S , Trigger Voltage and Current V2 = VFBX = 6 Vdc; RL = 100 Re = 1 k Re = 2 k 2N2323 thru 2N2329 2N2323S thru 2N2329S 2N2323A thru 2N2328A 2N2323AS thru 2N2328AS 2N2323 , S, A, AS 2N2324, S, A, AS 2N2326, S, A, AS , thru 2N2329 and 2N2323S thru 2N2329S 2N2323A thru 2N2328A and 2N2323AS thru 2N2328AS VGT1 IGT1 VGT1


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PDF MIL-PRF-19500/276 2N2323 2N2323S 2N2323A 2N2323AS 2N2324 2N2324S 2N2324A 2N2324AS 2N2326 2N2328A 2n2329 2N2329s JANtx 2N2324 JANTXV 2N2323 JANTX JANTX 2N2324A
RE130

Abstract: 2n2323
Text: o d e C o m m o n to Case G lass-to-Metal B ond for M a xim u m Hermetic Seal 2N2323 thru 2N2329 , Reverse Blocking Voltage, Note 1 2N2323 2N2324 2N2326 2N2329 Non-Repetitive Peak Reverse Blocking Voltage (Tj = 25 to 125°C) (t « 5 ms) 2N2323 2N2324 2N2326 2N2329 R M S On-State Current , 3-11 2N2323 thru 2N2329 " M A X IM U M RA TIN G S - continued (Tc = 25°C unless otherwise noted


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PDF 2N2323 2N2329 2N2324 2N2326 2N2329 RE130
MIL-S-19500

Abstract: 1N3713 1n93a IN1614 1N1202A JANTX 2N78A 2N489A-94A 1N4163 1N1206A JANTX 2N526
Text: 2N2060 MIL-S-19500/270 JAN 2N2323 , 24, 26 &A JANTX 2N2323 , 24, 26 & A MIL-S-19500/276 HIGH RELIABILITY


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PDF 1N93A MIL-S-19500/293 1N249B, MIL-S-19500/134 1N1184, MIL-S-19500/297 1N1202A, MtL-S-19500/260 MIL-S-19500 1N3713 1n93a IN1614 1N1202A JANTX 2N78A 2N489A-94A 1N4163 1N1206A JANTX 2N526
1998 - VOLTAGE-60

Abstract: No abstract text available
Text: Temperature 2N2322 2N2323 2N2324 2N2325 2N2326 25 40 50 75 100 150 1.6 150 225 , =125°C 2N2322 2N2323 2N2324 2N2325 2N2326 25 * 50 * 100 * 150 * 200 * V µA µA A Max


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PDF 2N2322 2N2326 2N2322 2N2323 VOLTAGE-60
2N2323

Abstract: 2N2324
Text: Blocking Voltage, Notes 1 and 2 2N2323 2N2324 2N2326 2N2329 Non-Repetitive Peak Reverse Blocking Voltage (t · 5 ms. Notes and 2) 2N2323 2N2324 2N2326 2N2329 RMS On-State Current (All Conduction Angles , . M O T O R O LA T H Y R IS T O R D EVIC E DATA 3-14 2N2323 thru 2N2329 * MAXIMUM RATINGS -


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PDF O-205AD) 2N2323 2N2324
2008 - 2N2324

Abstract: 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 2N2328 semiconductor case marking 16
Text: 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC , =380s 1.5 V R0 (11-December 2008) Central TM 2N2322 2N2323 2N2324 2N2325 Semiconductor


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PDF 2N2322 2N2323 2N2324 2N2325 2N2326 2N2327 2N2328 2N2329 11-December 2N2324 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 2N2328 semiconductor case marking 16
2N2323

Abstract: No abstract text available
Text: 2N2323 SILICON CONTROLLED RECTIFIER (SCR) DESCRIPTION: The 2N2323 is a Medium Current SCR for General Purpose Power Control Applications. PACKAGE STYLE TO- 39 0.350- 0.370 (8.890- 9.398} 0.315- 0.335 MAXIMUM RATINGS It It o m 1-6 A 1.O A (r m s ) (a v g ) @ Te - 8S 0C @ Te - 8S °C SO V Pgm - 1OO mW Pg (a v g ) - 1O mW -6S 0C to +12S 0C -6S 0C to &1SO 0C 1 = CATHODE 2 = GATE 3 = ANODE Ts t g CHARACTERISTICS SYMBOL |d r m /|r r m |d r m /|r r m Ig t < Pd i s s Tj T c


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PDF 2N2323
Not Available

Abstract: No abstract text available
Text: m 2N2323 \ \ SILICON CONTROLLED RECTIFIER (SCR) DESCRIPTION: The 2N2323 is a Medium Current SCR for General Purpose Power Control Applications. PACKAGE STYLE T O -39 (8 .8 9 0 - 9 .398) 0.315- 0.335 MAXIMUM RATINGS (8.001- 8 .509) T 'r 1-6 A (R S @ Tc - 85 °C M) 't 1.0 A (avg) @ Tc = 85 °C V (6 .096- ¡.604) T y~ PLANE ~ 0.045 50 V ce SEATING Jl (1 .143) M AX _J_ Pgm = 1 0 0 m W P diss P g (avg) = 1 0 m W Tj -65 °C


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PDF 2N2323 2N2323
2N2325

Abstract: 2N2324 2N2326 2N2322 2N2323
Text: Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. 2N2323 , =125°C 2N2322 25 * 2N2323 2N2324 2N2325 50 * 100 * 150 * 2N2326 200 * Max : 100 * µA


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PDF 2N2322 2N2326 2N2322 2N2323 2N2324 2N2325 2N2325 2N2324 2N2326 2N2323
1N93A

Abstract: 2N78A MIL-S-19500 1N4148 JANTX 1N4148 JAN 2n526 1N4532 1N3713 1N249B 1N1184
Text: JANTX 2N2060 MIL-S-19500/270 JAN 2N2323 , 24, 26 &A JANTX 2N2323 , 24, 26 & A MIL-S-19500/276 HIGH


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PDF 1N1183-90 1N248B-50EI 1N1195A-98A 1N2154-60 1N3765-68 1N1183Ã 1N3899-3903 1N3909-13 1N4529-30 1N5332 1N93A 2N78A MIL-S-19500 1N4148 JANTX 1N4148 JAN 2n526 1N4532 1N3713 1N249B 1N1184
JAN2N2323S

Abstract: TO9 package ad107
Text: 1874A Watertown AD107 Watertown 2N2323 Watertown 2N2323A Watertown ID200 Watertown JAN 2N2323 Watertown JAN 2N2323A Watertown JAN2N2323AS Watertown JAN 2N2323S Watertown JAN TX2N 2323 Watertown JA N TX2N


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PDF
2N3555

Abstract: 2N4110 2n2344 2N6332 2N1595 2N3005 2N4212 2n2009 2N3562 2N949
Text: SILICON CONTROLLED RECTIFIERS ON STATE CURRENT 180mA 200mA 260mA 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A 1.6 A 2.0A 2.2A ^T—SSL TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 TO-18 T0-39 TO-5 25 2N4212 2N2009 2N2322 2N2322A 2N2344 30 2N948 2N885A 2N6605 2N2683 2N2687 2N2679 2N2679A 2N2683A 2N3001 2N3005 2N877 2N885 2N3027 2N3030 2N3555 2N6332 2N3559 50 2N4108 2N4213 2N2010 2N1595 2N1595A 2N2323 2N6333 2N2323A 2N2345 60 2N5719 2N949


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PDF 180mA 200mA 260mA 275mA 280mA 350mA 390mA 500mA T0-39 2N4212 2N3555 2N4110 2n2344 2N6332 2N1595 2N3005 2n2009 2N3562 2N949
2010 - Not Available

Abstract: No abstract text available
Text: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 20,000Å/5,000Å/5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223


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PDF CPS057 CS39-4D 2N2323 2N2329 CS223-4M 22-March
MIL-S-19500

Abstract: 1N93A 2N78A 1N4148 JANTX IN1614 1N4148 JAN 1N4532 1N3713 1N1206A JANTX 2N1771A
Text: NUL-S-VÌ5W20ÌV JAN 2N2031 MIL-S-19500/204 JAN 2N2060 JANTX 2N2060 MIL-S-19500/270 JAN 2N2323 , 24, 26 &A JANTX 2N2323 , 24, 26 & A MIL-S-19500/276 HIGH RELIABILITY SPECIFICATIONS Conservative Design


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PDF IN1612-16 1N1341A-48A 1N3987-90 1N3879-83 1N1199A-1206A 1M3670A-73A 1N5331 1N3889-93 1N4510-11 A28F-D MIL-S-19500 1N93A 2N78A 1N4148 JANTX IN1614 1N4148 JAN 1N4532 1N3713 1N1206A JANTX 2N1771A
TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: 2N2323 2N2323 , SJ, SJTX, SJTXV 2N2323A , SJ, SJTX, SJTXV 2N2324, SJ SJTX, SJTXV 2N2324A, SJ SJTX


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PDF 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, 1N5767 1N5802 1N5802, 1N5804, TRANSISTOR J 5804 NPN TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
2N2327A

Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS PACKAGE TO-39 DEVICE TYPE 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 TO-5 2N2325A 2N2326 2N2326A 2N2327 2N2327A 2N2328 2N2328A 2N2329 2N2329A VOLTS 25 50 50 100 100 150 150 200 200 250 250 300 300 400 400 V drm TO-39/TO-5 i*GM IT AMPS 80°C 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 I drm HA VOLTS 0.35/0.8 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35/0.8 0.35/0.6 0.35


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PDF 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A 2N2327 2N2327A
New England Semiconductor 2n2326a

Abstract: 2N2324A 2N2323 2N2323A 2N2324 2N2322 2N2325A 2N2326 2N2326A 2N2327
Text: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE Vdrm VOLTS It AMPS 80°C Idrm ma VGT VOLTS Igt ha Ih mA Pgm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50 1.6 10 0.35/0.6 20 2.0 0.1 /H 2N2324 100 1.6 10 0.35/0.8 200 2.0 0.1 2N2324A 100 1.6 10 0.35/0.6 20 2.0 0.1 2N2325 150 1.6 10 0.35/0.8 200 2.0 0.1 2N2325A 150 1.6 10 0.35/0.6 20 2.0 0.1 TO-5 2N2326 200 1.6 10 0.35/0.8 200 2.0 0.1


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PDF O-39/TO-5 2N2322 2N2323 2N2323A 2N2324 2N2324A 2N2325 2N2325A 2N2326 2N2326A New England Semiconductor 2n2326a 2N2327
2004 - 2N1595

Abstract: 2N2324 2N1599A 2N1595A 2n2328 2N1599 2N2323 2N2329 2N1596 2n2326
Text: SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A 2N2328 2N1599 2N1599A 2N2329 400 CS18D CS18DZ 600 CS18M CS18MZ 800 CS18N CS18NZ IGT


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PDF 2N2322 2N1595 2N1595A 2N2323 2N1596 2N1596A 2N2324 2N2325 CS18B CS18BZ 2N1595 2N2324 2N1599A 2N1595A 2n2328 2N1599 2N2323 2N2329 2N1596 2n2326
2n1596

Abstract: 2N1595 2N2325 2N1599 2N1596A 2N1595A CS18BZ CS18B 2N2324 2N2323
Text: SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 200 2N2325 CS18B CS18BZ 2N1597 2N1597A 250 2N2326 2N2327 300 2N1598 2N1598A 2N2328 2N1599 2N1599A 2N2329 400 CS18D CS18DZ 600 CS18M CS18MZ 800 CS18N CS18NZ IGT


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PDF 2N2322 2N1595 2N1595A 2N2323 2N1596 2N1596A 2N2324 2N2325 CS18B CS18BZ 2n1596 2N1595 2N2325 2N1599 2N1596A 2N1595A CS18BZ CS18B 2N2324 2N2323
2N2323

Abstract: 2N2329 CPS057 CS39-4D
Text: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 BACKSIDE ANODE 145 Adams


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PDF CPS057 CS39-4D 2N2323 2N2329 2N2329 CPS057 CS39-4D
TO5 package

Abstract: To5 transistor 2N2323 2N2323 JANTX
Text: 2N2323 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = IC = 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100


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PDF 2N2323 O205AA) 20-Aug-02 TO5 package To5 transistor 2N2323 2N2323 JANTX
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