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2N2223 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
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2N2223 datasheet (63)

Part Manufacturer Description Type PDF
2N2223 Central Semiconductor Leaded Small Signal Transistor Dual - Pol=NPN / Pkg=TO77 / Vceo=80 / Ic=0.5 / Hfe=50-200 / fT(Hz)=50M / Pwr(W)=0.6 Original PDF
2N2223 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N2223 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N2223 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
2N2223 General Electric Semiconductor Data Book 1971 Scan PDF
2N2223 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N2223 Motorola The European Selection Data Book 1976 Scan PDF
2N2223 Motorola European Master Selection Guide 1986 Scan PDF
2N2223 Motorola NPN silicon dual amplifier transistor. - Pol=NPN / Pkg=TO77 / Vceo=80 / Ic=0.5 / Hfe=50-200 / fT(Hz)=50M / Pwr(W)=0.6 Scan PDF
2N2223 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N2223 Others Basic Transistor and Cross Reference Specification Scan PDF
2N2223 Others Shortform Transistor PDF Datasheet Scan PDF
2N2223 Others GE Transistor Specifications Scan PDF
2N2223 Others Shortform Transistor PDF Datasheet Scan PDF
2N2223 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N2223 Others Semiconductor Master Cross Reference Guide Scan PDF
2N2223 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2N2223 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N2223 Others Shortform Electronic Component Datasheets Scan PDF
2N2223 New England Semiconductor SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 Scan PDF

2N2223 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Text: 2N2223.A VCEO VCER VCBO VEBO ic One Die Total Device Dissipation @ Ta = 25*C 2N2060,A 2N2223.A 2N2480.A * Derate above 25°C 2N2060.A 2N2223 ,A 2N2480,A Total Device Dissipation @ T c - 25°C 2N2060.A 2N2223.A 2N2480,A Derate above 25°C 2N2060rA 2N2223.A 2N2480.A PD mW 0.5 0.5 0.3 2.86 2.86 1.72 Pd Watts 1.5 1.6 , ) VcER(sus) 2N2060, 2N2223 , 2N2223A VcEO(sus) 2N2480A 2N2060, 2N2223 , 2N2223A v (BR)CBO 2N2060, 2N2223 , 2N2223A 2N2480A* V(BR)EBO 2N2060, 2N2223 , 2N2223A 2N2480A ICBO 2N2480A 2N2480A 2N2060 2N2223 , 2N2223A


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PDF 0S37b 2N2060 2N2223 2N2480 2n2223 transistor 2N2223A
2004 - 2N2223

Abstract: No abstract text available
Text: 2N2223 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N2223 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2223 at our online store! 2N2223 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2223 Information Did you Know , Parts Request a Quote Test Houses 2N2223 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR


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PDF 2N2223 2N2223 STV3208 LM3909N LM3909
2n2060

Abstract: 2n2223 2N2060 MOTOROLA
Text: RS / R F Sym bol 2N206Q 2N2223.A 60 80 100 7.0 75 5.0 500 O n e D ie A ll D ie E q ua l P o w e r , ation @ T c = 25°C 2N2060.A 2N2223.A 2N2480/A Derate above 25°C 2N2060«A 2N2223A 2N2480.A O perating and , ) 2N2060, 2N2223 , 2N2223A V cE O (sus) 2N2480A 2N2060, 2N2223 , 2N2223A V(BR)CBO 2N2060, 2N2223 , 2N2223A 2N2480A* V{BR)EBO 2N2060, 2N2223 , 2N2223A 2N2480A >CBO 2N2480A 2N2480A 2N2060 2N2223 , 2N2223A = 150=C) 2 N 2060 2N2223 , 2N2223A >EBO 2N2060 2N2223 , 2N2223A 2N2480A 2%. 2.0 10 20 - - 15 0.02 0.002 0.01 10 15


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PDF 2N206Q 2N2223 2N2480 0Gflb23fl 2N2060 2N2223, 2N2480A 2N2060jA 2N2060 MOTOROLA
2N2223

Abstract: 2N2060 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A jan 2n2060 2N2480A 2N2480 MD2218
Text: RATINGS {XSTRS/R F) Rating Symbol 2N2060 2N2223.A 2N2480 2N2480A Unit Collector-Emitter Voltage VCEO , One Die All Die Equal Power Total Device Dissipation @ TA = 25°C 2N2060.A 2N2223.A 2N2480.A * Derate above 25°C 2N2060.A 2N2223.A 2N2480.A PD 0.5 0.5 0.3 2.86 2.86 1.72 0.6 0.6 0.6 3.43 3.43 3.43 mW mWCC Total Device Dissipation @ Tc = 25°C 2N2060.A 2N2223.A 2N2480.A Derate above 25°C 2N2060.A 2N2223.A 2N2480.A PD 1.5 1.6 1.0 8.6 9.1 5.7 3.0 3.0 2.0 17.2 11.4 11.4 Watts mW/°C Operating and


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PDF 0S37b 2N2060 2N2223 2N2480 2N2480A 2N2480 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A jan 2n2060 MD2218
2014 - 2n2223a

Abstract: No abstract text available
Text: 2N2223 2N2223A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal , =100μA 2N2223 MIN MAX 0.8 1.0 15 2N2223A MIN MAX 0.9 1.0 5.0 UNITS nA μA nA V V V V V , . R0 (22-January 2014) 2N2223 2N2223A SILICON DUAL NPN TRANSISTORS TO-78 CASE - MECHANICAL


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PDF 2N2223 2N2223A 2N2223 x10-4 22-January 2n2223a
N222

Abstract: 2N2060 2N2223 ZDT40 "dual TRANSISTORs" Ferranti Semiconductors ZDT45 ZDT44 ZDT42 ZDT41
Text: 09 10 5 10 ZDT44 0 8 10 10 20 ZDT45 0-8 10 10 20 2N2060 0-9 10 5 10 2N2223 0-8 10 15 25 2N2223A 0-9 10 5 25 Pin Configuration 2N2060, 2N2223 , 2N2223A ZDT40 through 45 5 6 Lead TO-5 Pins 4 and 8 , 100 60 500 500 50 150 60 50 2N2223 100 60 7 500 500 50 200 50 50 2 N2223A 100 60 7 500 500 50 200


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PDF 2N2060 BS9300C479 ZDT45 N2060 2N2223 N2223A ZDT40 ZDT41 ZDT42 ZDT44 N222 ZDT40 "dual TRANSISTORs" Ferranti Semiconductors ZDT41
2N2223

Abstract: 2N2060 Ferranti Semiconductors "dual TRANSISTORs" BS9300 ZDT44 ZDT42 ZDT41 ZDT40 C479
Text: 50 150 60 50 2N2223 100 60 7 500 500 50 200 50 50 2N2223A 100 60 7 500 500 50 200 50 50 , €” ZDT42 0.9 1.0 5 10 ZDT44 0.8 1.0 10 20 ZDT45 0.8 1.0 10 20 2N2060 0.9 1.0 5 10 2N2223 0.8 1.0 15 25 2N2223A 0.9 1.0 5 25 Pin Configuration 2N2060, 2N2223 , 2N2223A ZDT40 through 45 5 5 6 Lead TO-5 Pins 4


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PDF 2N2060 BS9300 2N2223 2N2223A ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 Ferranti Semiconductors "dual TRANSISTORs" ZDT41 ZDT40 C479
2N2060

Abstract: 2N2223 2N2223A ZDT40 ZDT41 ZDT42 ZDT44 ZDT45
Text: 300 60 200 200 10 2N2060 100 60 7 500 500 50 150 60 50 2N2223 100 60 7 500 500 50 200 50 50 2N2223A , 5 10 2N2223 0.8 1.0 15 25 2N2223A 0.9 1.0 5 25 Pin Configuration 2N2060, 2N2223 , 2N2223A


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PDF 2N2060 ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 60T45 2N2223 2N2223A
2N2060

Abstract: No abstract text available
Text: VCBO Volts ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 2N2060 2N2223 2N2223A 45 60 60 60 100 100 , 2N2060 2N2223 2N2223A M ax Static Forward current Transfer Gain Ratio h p E i/h cH Min. Max. _ , , 2N2223 , 2N 2223A ZD T 40 through 45 5 1 6 Lead TO -5 Pins 4 and 8 omitted All leads electrically


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PDF ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 2N2060 2N2223 2N2223A 2N2060, 2N2223, 2N2060
2M222

Abstract: 2n2223 2N2223A
Text: L L A S . T E X A S 75222 4-81 TYPES 2N2060, 2N2223. 2N2223A DUAL N-P-N SILICON TRANSISTORS , , T E S T C O N D IT IO N S 2N2223 2N2223A M IN M A X 100 60 80 7 2 10 15 10 15 25 150 U N IT , 25°C free-air temperature (unless otherwise noted) 2N 2223 2N2060 2N2223A U N IT EACH T R IO D E C o , T C O N D IT IO N S V c E = 5 V, Vc e 2N2060 M IN M A X 0 .9 0.9 1 1 5 5 10 2N2223 M IN M A X 0.8 1 2N2223A U N IT M IN M A X 0 .9 1 l e = 100 mA, See N o t e 8 See N o t e 8 " 5 V


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PDF 2N2060, 2M2223A 2N2060 2M222 2n2223 2N2223A
2N2919

Abstract: 2N2642
Text: NEW ENGLAND SEMICONDUCTOR DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920 2N5793A 2N5794A VcEO (sus) VOLTS 60 60 60 30 50 40 45 45 45 45 45 45 60 60 60 45 30 45 45 45 45 60 60 40 40 Ic (max) AMPS 0.5 0.5 0.5 0.05 0.05 0.5 0.03 0.03 0.03 0.03 0.03 0.03 0.5 0.5 0.04 0.04 0.05 0.03 0.03 0.03 0.03 0.03 0.03 0.6 0.6 @ IC/ ^ C E VcE(sat


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PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919
Not Available

Abstract: No abstract text available
Text: TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA silicon Transistor 2N2223 absolute maxfmum ratings: (25°C) (unless otherwise Voltages Collector to Base Collector to Emitter (R BE =10 ohnis) Collcuor to Emitter Emitter to Base Temperatures Storage Operating Junction volts 100 VCBO M JfOCC OMMMf volts volts volts 80 60 7 V CE R Veto Vcno H Tj Dissipation One Side Only Unit at 25"C Case


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PDF 2N2223
2N2148

Abstract: 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N2147 transistor 2N1906 transistor 2n1906 2N1924
Text: 2N2222A 2N1550A 2N1615 2N1708 2N1907 2N2139A 2N2223 2N1551 2N1616 2N1708A 2N1908 2N2140 2N2223A 2N1551A


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PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2148 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N2147 transistor 2N1906 transistor 2n1906 2N1924
Transistor 78 L 05

Abstract: 2N2223A 2N2453 2N2453A 2N2919 2N2642 2N2639 2N2641 2N2640 2N2480A
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE DEVICE TYPE Veto (sus) VOLTS Ic (max) AMPS 1»FE @ Ic/ VCE min/max @ raA/V VcE(sat) @IC/IB V @ raA/raA P fr (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 15 60 TO-78 2N2223 60 0.5 25/150@0.1/5 1.2@50/5 15 50 2N2223A 60 0.5 25/150@0.1/5 1.2@50/5 15 50 Jgr 2N2453 30 0.05 150/600@l/5 l@5/0.5 8 60 2N2453A 50 0.05 150/600@l/5 l@5/0.5 8 60 / 2N2480A 40 0.5 35@0.1/5 1.2@50/5 18 50 2N2639 45 0.03 65@l/5 l@10/0.5 8 40


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PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919
Transistor 78 L 05

Abstract: 2N2919 130L 2N2903 2N2916
Text: 60 60 60 60 60 60 60 250 250 TO-78 2N2223 2N2223A 2N2453 / 2N2453A 2N2480A 2N2639 2N2640


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PDF 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919 130L 2N2903 2N2916
2C415

Abstract: SGS-ATES dual 2c425 2C425 2C111 2C444 BFX36 BFX81 sgs-ates transistors BFY83 BFX79
Text: 1.0 5 19147F 71 2N2223 NPN 0.6 60 500 25 - - 0.1m 1.0 15 19151C 71 NPN/PNP Dual Transistors


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PDF BFX11 19040F BFX36 9048A BFY81 9072A BFY82 19073X BFY83 19074H 2C415 SGS-ATES dual 2c425 2C425 2C111 2C444 BFX81 sgs-ates transistors BFX79
2N2147

Abstract: 2N2148 2N2075 2N2160 book TRANSISTOR 2N2222 2n2222 2N2016 2N1924 2N2219 transistor 2N1545
Text: 2N2222A 2N1550A 2N1615 2N1708 2N1907 2N2139A 2N2223 2N1551 2N1616 2N1708A 2N1908 2N2140 2N2223A 2N1551A


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PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2147 2N2148 2N2075 2N2160 book TRANSISTOR 2N2222 2n2222 2N2016 2N1924 2N2219 transistor 2N1545
Not Available

Abstract: No abstract text available
Text: T 42 ZDT44 Z D T 45 2N2060 2N2223 2N2223A V cbo Volts Type fT(Min.) M H z at lc , | Min. ZD T 40 ZDT41 Z D T 42 ZDT44 ZDT45 2N2060 2N 2223 2N2223A Max. mV Max. Voltage


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PDF ZDT41 ZDT44 ZDT45 2N2060 2N2223A
N3055

Abstract: ZDT30 2N3440 ZT1488 ZT1486 ZT1484 ZT1482 ZT1480 2N3439 transistor t5a
Text: 50 60 5 10 8 TO-78 T5A/2 2N2223 100 80 7 0-5 0*6 10 15 50 50 15 25 — TO-78 T5A/2 2N2223A 100


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PDF ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 N3055 ZDT30 transistor t5a
2N3729

Abstract: 2N4072 2N2947 2n4073
Text: 8134693 SEMICQA_ Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652 2N2652A 2N2223 2N2223A 2N2060 Type NPN 2N2951 2N2952 2N4072 2N4073 2N3137 2N4427 2N5109 2N2948 2N1338 2N1491 2N3866 2N5108 2N4428 2N3553 2N2947 2N3297 2N1335 2N1336 2ML337 2N1339 2ML340 2NL341 2NL492 2N1493 2N3118 2N1342 2N4130 2N3119 2N4131 Maximum Ratings Ambient Pp Veb One Both VCB Vce Side Sides Volts Volts Volts mW mW 450


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PDF 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N4072 2N2947 2n4073
2N3726

Abstract: 2N2453 2N3806 2N2480 2N2453A 2N2223A 2N2223 2N2060A 2N2060 2N2918
Text: 50 60 10 3.0 2N2223 NPN AMPL/SWITCH 500 100 60 50 200 10 5.0 1.2 50 50 20 15 2N2223A NPN AMPL/SWITCH 500 100 60 50 200 10


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PDF 600mW 2N2060 2N2060A 2N2223 2N2223A 2N240 2N4016 2N5794 2N5796 MD708 2N3726 2N2453 2N3806 2N2480 2N2453A 2N2223A 2N2223 2N2060A 2N2060 2N2918
TIC 2060

Abstract: TIC 2060 D 1/triac tic 2060
Text: TYPES ¡ w a e y 2N2223 , 2N2223A DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . O L - S 7 2 1 1 6 7 8 , M A R C H 197 2 TWO TRA N SISTO R S IN ONE PA CKA G E FOR D IF F E R E N T IA L A M P LIFIER APPLICATIO NS · · "mechanical data Medium Power High Operating Voltage A L L L E A D S IN S U L A T E D FR O M C A S E D im ension« w ith o u t to le ra n ce d esig nate true po sitio n . L e a d , IC E B O X 6 0 1 2 D A LLA S . TE X A S 75222 TYPES 2J ^3Si; 2N2223 , 2N2223A DUAL N-P-N


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PDF 2N2223, 2N2223A TIC 2060 TIC 2060 D 1/triac tic 2060
2010 - 2N2222B

Abstract: 2N2280 2N2307 BSY87 2SC696 2N2244 2n2382 2N1564 Elcoma 2n2268
Text: 2N735A 2N2459 2N2463 KT503V 2N2223 2N2223A 2N2981 2N2982 2N2982 PN3568 2N3568 BC341 BC341-6 BSY87 BSY87 , 2N2222B 2N2223 CrimsonSemi FairchildSC GnrlElec/GE Semilronics TeledynSemi TexslnslLtd 2N2223A CSR Indus


Original
PDF 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A 2N2222B 2N2280 2N2307 BSY87 2SC696 2N2244 2n2382 2N1564 Elcoma 2n2268
2N3050

Abstract: 2N2804 2N2640
Text: "SEMICONDUCTOR TECHNOLOGY GSE D | fll3t.45fl 0230^4 | r ^ f - 27 SILICO N DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS Pow er Dissipation (Total) @ 2 5 °C ( M in .) MW ËHÏ' hF E ® lc v CE0 (volts) 60 60 60 60 60 (Min.) 30 30 30 40 40 (Max.) 90 90 90 200 200 mA .10 .10 .10 1.0 1.0 MATCHING hFE(%) 10 10 10 20 10 v b e (m v ) STIType Polarity TRACKING uV/°C (Max.) 10 10 10 25 25 CASE STYLE TO-77 TO-77 TO-77 TO-77 TO-77 2N2Q60 2N2060A 2N2060B 2N2223 2N2223A N PN NPN NPN NPN NPN


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PDF 2N2Q60 2N2060A 2N2060B 2N2223 2N2223A 2N2453 2N2639 2N2640 2N2641 2N2642 2N3050 2N2804
N2219

Abstract: 2N2243 Hirel 2N2453 2N2483 2N2060 2N2192 2N2192A 2N2193 2N2193A
Text: 0.8 100-300 10/0.15 250M 0.5 1 * w ' 2N2223 HI-REL NPN * T077 80 0.5 50-200 5/10m 50M 0.6 I . 2N2223A


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PDF 133ia? 00Q13 2N1937 2N1991 2N2060 5/10m 2N2102 35min 10/10m 2N2192 N2219 2N2243 Hirel 2N2453 2N2483 2N2192A 2N2193 2N2193A
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