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TMS28F020-15C4FML Texas Instruments 256KX8 FLASH 12V PROM, 150ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32
TMS28F020-10C4FME Texas Instruments 256KX8 FLASH 12V PROM, 100ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32
TMS28F020-10C5DDQ Texas Instruments 256KX8 FLASH 12V PROM, 100ns, PTSO32, TSOP-32
TMS28F020-12C4DDL4 Texas Instruments 256KX8 FLASH 12V PROM, 120ns, PDSO32
TMS28F020-12C5DDL Texas Instruments 256KX8 FLASH 12V PROM, 120ns, PTSO32, TSOP-32
TMS28F020-15C4DDE4 Texas Instruments 256KX8 FLASH 12V PROM, 150ns, PDSO32
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1R4000A28F020G Woodhead Molex Master Electronics 20 $30.82 $28.26
1R4000A28F020G Molex Chip1Stop 2 $37.10 $37.10
1R4000A28F020G Woodhead Molex Newark element14 15 $74.03 $69.68
AM28F020-120C3JI AMD Bristol Electronics 87 - -
AM28F020-120EC AMD New Advantage Corporation 1 - -
AM28F020-120JC AMD Chip One Exchange 30 - -
AM28F020-150FC AMD New Advantage Corporation 29 - -
AM28F020-150JC AMD Bristol Electronics 61 - -
AM28F020-150JC AMD Bristol Electronics 10 $4.14 $2.69
AM28F020-150PC AMD New Advantage Corporation 32 - -
AM28F020-200FC AMD Bristol Electronics 302 - -
AM28F020-90JC AMD New Advantage Corporation 574 - -
AM28F020120JC AMD ComS.I.T. 30 - -
AM28F020120PC AMD Chip One Exchange 24 - -
AM28F020150EC AMD ComS.I.T. 96 - -
AM28F020150JC AMD ComS.I.T. 386 - -
AM28F020150PC AMD Chip One Exchange 13 - -
AM28F020A120FI AMD ComS.I.T. 1,520 - -
AM28F020A120PC AMD Chip One Exchange 6 - -
CAT28F020G-12T ON Semiconductor Bristol Electronics 690 - -
CAT28F020G-90 ON Semiconductor Avnet - - -
CAT28F020H-12T Catalyst Semiconductor Rochester Electronics 500 $4.34 $3.53
CAT28F020H-90 Catalyst Semiconductor Rochester Electronics 28 $5.48 $4.46
CAT28F020HR90 Emerson Process Management ComS.I.T. 5 - -
CAT28F020N-12 CATSC Chip One Exchange 15 - -
CAT28F020N-12 Catalyst Semiconductor Bristol Electronics 19 - -
CAT28F020N-90 Catalyst Semiconductor Bristol Electronics 100 - -
CAT28F020N12 Catalyst Semiconductor Rochester Electronics 225 - -
CAT28F020T90T CATALYST SEMICONDUCTOR Bristol Electronics 12 - -
E28F020-200 Intel Corporation New Advantage Corporation 143 - -
E28F020-90 Intel Corporation Chip One Exchange 1,857 - -
E28F020150 Intel Corporation ComS.I.T. 428 - -
E28F02070 Intel Corporation ComS.I.T. 67 - -
F28F020-200 Intel Corporation Bristol Electronics 110 - -
LH28F020SUTL12 Sharp Microelectronics of the Americas ComS.I.T. 1,000 - -
MD28F020-12/BXA Rochester Electronics - - -
MD28F020-90/B Rochester Electronics - - -
MF28F020-12/B Rochester Electronics - - -
N28F020-120 Intel Corporation New Advantage Corporation 37 - -
N28F020-150 Intel Corporation New Advantage Corporation 750 - -
N28F020-150 - PROGRAMMED Intel Corporation Chip One Exchange 4 - -
N28F020-200 Rochester Electronics - - -
N28F020-70 Rochester Electronics - - -
N28F020120 Intel Corporation ComS.I.T. 255 - -
N28F020150 Intel Corporation ComS.I.T. 115 - -
N28F020150 Intel Corporation Chip One Exchange 103 - -
N28F020200 Intel Corporation Bristol Electronics 6 - -
N28F02090 Intel Corporation Bristol Electronics 22 - -
P28F020-70 Rochester Electronics - - -
P28F020150 Intel Corporation Chip One Exchange 10 - -
P28F02090 Intel Corporation ComS.I.T. 7 - -
TE28F020-120 Intel Corporation Chip One Exchange 1,142 - -
TE28F020-150 Intel Corporation Chip One Exchange 830 - -
TE28F020-150 Rochester Electronics - - -
TE28F020-90 Rochester Electronics - - -

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28F020 datasheet (9)

Part Manufacturer Description Type PDF
28F020 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
28F020 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original PDF
28F020 Intel 2048K (256K x 8) FLASH MEMORY Original PDF
28F020 Intel 2048K (256K x 8) CMOS Flash Memory Scan PDF
28F020 Intel 2048K CMOS Flash Memory Scan PDF
28F020 Intel 2048K (256K x 8) CMOS Flash Memory Scan PDF
28F020 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F020 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F020 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

28F020 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - B1560

Abstract: B1560 equivalent 28f020 transistor B1560 294005 AP-325 AP-316 b439 b1770 3817
Text: 28F020 2048K (256K x 8) FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip , November 1995 Order Number 271295-002 28F020 28F020 2048K (256K x 8) FLASH MEMORY 271295 ­ 1 28F020 2048K (256K x 8) Flash Memory Die Photo 2 28F020 28F020 2048K (256K x 8) FLASH MEMORY 10 , plot and the photo indicate the location of the GEL-PAK notch Figure 1 28F020 2048K (256K x 8) Flash Memory Die Bond Pad Layout 3 28F020 28F020 2048K (256K x 8) FLASH MEMORY 1 1 Pad Description


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PDF 28F020 2048K 8F020 X28F020-90 ER-20 ER-24 RR-60 AP-316 B1560 B1560 equivalent transistor B1560 294005 AP-325 b439 b1770 3817
28f020-150

Abstract: 28F020-200 intel 28F020
Text: production lots. TESTING CHARACTERISTICS FOR 28F020-90 , 28F020-150 , 28F020-200 AC TESTING INPUT/OUTPUT , >5) Min 80 80 80 35 0 55 0 35 0 6 Max 28F020-90 <4.5) Min 90 90 90 40 0 55 0 40 Max 28F020-150W % Min , 28F020-150W Min 150 0 60 50 10 6 0 20 0 60 20 10 28F020-200 (4) Min 200 0 75 50 10 6 0 20 0 60 20 10 9.5 , 28F020-90« ) Min 90 90 90 55 0 55 0 35 0 6 Max 28F020-150 Min 150 150 150 55 0 55 0 35 0 6 Max Unit ns , Notes 28F020-90« ) Min 90 0 60 50 10 6 Max 28F020-150 Min 150


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PDF 28F020 2048K TE28F020-150 TF28F020-150 TE28F020-90 TF28F020-90 ER-20, ER-24, ER-28, RR-60, 28f020-150 28F020-200 intel 28F020
29F020

Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Text: CE# at a logic-high level, the standby operation disables most of the 28F010 and 28F020's circuitry , how commands and bus operations are combined to perform electrical erasure of the 28F010 and 28F020. , ^ t intel 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) Flash Electrical Chip-Erase , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 , final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while


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PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020
i80C186

Abstract: M28F020 29024
Text: | . 30 pF NOTES: 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. 5-19 , Change Write Recovery Time before Read 2 ,3 0 Vcc + 5% VCC + 1 0 % Notes 28F020-70W 28F020-70 (5) Min 70 70 70 28 Max Min 80 80 80 30 Max 28F020-90 (5) Min 90 90 90 35 Max 28F020-150 (S) Min 150 120 , 40 Vcc +5% Vcc 28F020-70 (2.4) 28F020-70 <5> Min 70 0 40 Max Min 80 0 40 Max 28F020-90 <5) Min 90 0 40


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PDF 28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024
SSC16E

Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020
Text: Time to Chip Enable Low 1 Notes 28F020-150 Min 150 0 80 50 10 6 0 0 0 70 20 1.0 Max 28F020-200 Min 200 , stat ic RAM. Where periodic updates of code and datatables are required, the 28F020's reprogrammability , . Figure 3 de picts two 28F020s tied to the 80C186 system bus. The 28F020's architecture minimizes , , the standby operation disables most of the 28F020's circuitry and substantially reduces device power , configurations, TSOP reduces the number of board layers and overall volume nec essary to layout multiple 28F020S.


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PDF 28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020
PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Text: # at a logic-high level, the standby operation disables m ost of the 28F010 and 28F020's circuitry and , lin g 14 28F010/ 28F020 PAGE 4.5 DC Characteristics- 28F020- TTLVNMOS C om patible- Com m , ro d u c ts .24 4.7 DC Characteristics- 28F020- CMOS Com patible- Com m ercial P ro d u , - 28F020- TTLVNMO Com patible- Extended Tem perature P ro d u c ts , .31 4.11 DC Characteristics- 28F020- CM OS Com patible- Extended Tem perature P ro d u c ts


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PDF 28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N
Not Available

Abstract: No abstract text available
Text: 28F020S tied to the 80C186 system bus. The 28F020†™s architecture minimizes interface circuitry needed , RAM. Where periodic updates of code and data tables are required, the 28F020†™s reprogrammability , Standby With CE# at a logic-high level, the standby operation disables most of the 28F020†™s , erasure of the 28F020. Refer to AC Characteristics— Write/Erase/Program Only Oper­ ations and , off. Table 4 illustrates the power dissipated when updating the 28F020. intei 28F020 Table


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PDF 28F020 2048K 32-Pin 32-Lead
Not Available

Abstract: No abstract text available
Text: limited number of samples from production lots. TESTING CHARACTERISTICS FOR 28F020-90 , 28F020-150 , 28F020-200 TESTING CHARACTERISTICS FOR 28F020-80V05 AC TESTING INPUT/OUTPUT WAVEFORM AC TESTING , are required, the 28F020†™s reprogrammability and nonvolatility make it the obvious and ideal re , . The 28F020†™s architecture minimizes interface cir­ cuitry needed for complete in-circuit updates , the number of board layers and overall volume nec­ essary to layout multiple 28F020s. TSOP is


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PDF 28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28,
Not Available

Abstract: No abstract text available
Text: ß R lIÜ M M tf In te l 28F020 2048K (256K x 8) FLASH MEMORY SmartDie Product Specification , owners. October 1994 Order Number: 271295-002 HÛ2bl7S QlSSblD 431» 10-9 28F020 28F020 2048K (256K x 8) FLASH MEMORY intel 28F020 2048K (256K x 8) Flash Memory Die Photo 10-10 I 4 f l2 b l7 5 P fô iy iM O K lÆ if D lS S bll 37Ö ■28F020 28F020 2048K (256K x 8 , the GEL-PAK notch. Figure 1. 28F020 2048K (256K x 8) Flash Memory Die/Bond Pad Layout 4fl2bl7S


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PDF 28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325,
1996 - 28F020

Abstract: 80C186 80c186 specification update
Text: 1 Testing characteristics for 28F020-70 in standard configuration and 28F020-90 and 28F020-150 2 , 28F020-150 (5) Commercial and Extended Temperature Products 28F020-70 (4) NOTES 1 Whichever occurs , data-tables are required the 28F020's reprogrammability and nonvolatility make it the obvious and ideal , 80C186 system bus The 28F020's architecture minimizes interface circuitry needed for complete in-circuit , standby operation disables most of the 28F020's circuitry and substantially reduces device power


Original
PDF 28F020 2048K 32-Pin 32-Lead AP-325 ER-20 -80V05 28F020 80C186 80c186 specification update
intel eprom Intelligent algorithm

Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
Text: 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 , Temperature Products Versions Vcc+5% 28F020-70 <2.«> Unit Vcc +10% 28F020-70 <5) 28F020-90I5 , periodic updates of code and data-tables are required, the 28F020's reprogrammability and non-volatility , bus. The 28F020's architecture minimizes interface circuitry needed for complete in-circuit updates of , logic-high level, the standby operation disables most of the 28F020's circuitry and substantially reduces


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PDF 28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020
Not Available

Abstract: No abstract text available
Text: characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics , 28F020-70W 28F020-70 <5> Vcc + 1 0 % Symbol Characteristics Notes Min Max 28F020-90 <5 , from 28F020-150 production lots. 402bl75 OlbbQbl 2T3 ■28F020 ABSOLUTE MAXIMUM RATINGS , RAM. Where periodic updates of code and data-tables are required, the 28F020†™s reprogrammability , to the 80C186 system bus. The 28F020†™s architecture minimizes interface cir­ cuitry needed for


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PDF 28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077
1996 - TN28F020-150

Abstract: 28F020 80C186 intel 28F020
Text: 28F020's reprogrammability and nonvolatility make it the obvious and ideal replacement for EPROM , memory-to-processor interfacing. Figure 3 depicts two 28F020s tied to the 80C186 system bus. The 28F020's , , the standby operation disables most of the 28F020's circuitry and substantially reduces device , , illustrates how commands and bus operations are combined to perform electrical erasure of the 28F020. Refer , illustrates the power dissipated when updating the 28F020. E 28F020 Table 4. 28F020 Typical Update


Original
PDF 28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020
1997 - 28F020

Abstract: 28F010 intel DOC
Text: Nomenclature Errata are design defects or errors. These may cause the 28F020's behavior to deviate from , 5 VOLT BULK ERASE FLASH MEMORY 28F020 (x8) SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297847-002 The 28F020 may contain design defects or errors known as errata which may , in this Specification Update. 28F020 SPECIFICATION UPDATE Information in this document is , any time, without notice. The 28F020 may contain design defects or errors known as errata which may


Original
PDF 28F020 28F010 intel DOC
28F020T

Abstract: intel 28F020
Text: ircuit*2) NOTES: 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. 1998 Flash M em ory D , 0 0 28F020-120W Min 120 120 120 28F020-150W Min 150 150 150 50 0 Symbol tAVAV^RC tELQV , periodic updates of code and data tables are required, the 28F020's reprogrammability and nonvolatility , depicts two 28F020S tied to the 80C186 system bus. The 28F020's architecture minimizes interface circuitry


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PDF 28F020 2048K E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28FQ20-150 N28F020-150 TE28F02Q-90 TE28F020-120 28F020T intel 28F020
n28f020-150

Abstract: No abstract text available
Text: | .30 pF 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. 6-18 I AC , tELQV/tCE V cc + 5 % VCc + 10% 28F020-70H ) 28F020-70 <5) Min 70 70 70 28 Max Min 80 80 80 30 0 35 0 30 0 0 0 30 0 40 0 30 0 0 45 0 30 Max 28F020-90 (S) Min 90 90 90 35 0 55 Max 28F020-150 (5) Min 150 150 , 28F020-70 <2,4) 28F020-70 <5) Min 80 0 40 Max 28F020-90 <5) Min 90 0 40 55 40 55 10 6 0 15 0 40 55 20 10 20 10


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PDF 28F020 2048K -80V05, -80V05 n28f020-150
1997 - 28F020

Abstract: intel DOC
Text: 28F020's behavior to deviate from published specifications. Hardware and software designed to be used , tELQV/tCE Notes 28F020-1204 Min 120 2,3 0 ns ns 55 0 2 1,2 ns ns ns , Characteristics tAVAV/tWC Write Cycle tAVWL/tAS Notes 28F020-120 (4) Min Max Units 120 , 28F020 SPECIFICATION UPDATE Release Date: June, 1997 Order Number: 297847-001 The 28F020 may , specifications. Current characterized errata are documented in this Specification Update. 28F020


Original
PDF 28F020 28F020 intel DOC
1996 - 29F020

Abstract: 28F020 TN28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010 P28F010
Text: 28F010 and 28F020's circuitry and substantially reduces device power consumption. The outputs are , . Figure 3 depicts two 28F020s tied to the 80C186 system bus. The 228F010 and 28F020 architecture , 28F020. Refer to AC Characteristics-Write/Erase/Program Only Operations and waveforms for specific , E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) n n n n n n n Flash , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020


Original
PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010 P28F010
1995 - intel 80c186

Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
Text: 1 Testing characteristics for 28F020-70 in standard configuration and 28F020-90 and 28F020-150 2 , 28F020-150 (5) Commercial and Extended Temperature Products 28F020-70 (4) NOTES 1 Whichever occurs , data-tables are required the 28F020's reprogrammability and nonvolatility make it the obvious and ideal , 80C186 system bus The 28F020's architecture minimizes interface circuitry needed for complete in-circuit , a logic-high level the standby operation disables most of the 28F020's circuitry and substantially


Original
PDF 28F020 2048K 32-Pin 32-Lead ER-28 AP-316 AP-325 ER-20 -80V05 intel 80c186 F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020
P28F020-150

Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020
Text: . Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing , 28F020-70 <5) 28F020-90 (5) 28F020-150 (S) Symbol Characteristics Notes Min Max Min Max Min Max Min Max , 28F020-70 <2,4) Unit VCC +10% 28F020-70 <5) 28F02 28F020-150 <5> Symbol Characteristics , periodic updates of code and data-tables are required, the 28F020's reprogrammability and non-volatility , bus. The 28F020's architecture minimizes interface circuitry needed for complete in-circuit updates of


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PDF 28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020
2046K

Abstract: 28F020 SmartDie 29024
Text: in t e * 28F020 2048K (256K x 8) FLASH MEMORY SmartDie Product Specification Command Register , the property of their respective owners. October 1994 Order Number: 271295-002 10-9 28F020 28F020 2048K (256K x 8) FLASH MEMORY 28F020 2048K (2S6K x 8) Flash Memory Die Photo 10-10 i n t e l . 28F020 28F020 2048K (256K x 8) FLASH MEMORY 1.0 DIE SPECIFICATIONS GEL-PAK* Notch , indicate the location of the GEL-PAK notch. Figure 1. 28F020 2046K (256K x 8) Flash Memory Die/Bond Pad


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PDF 28F020 2048K X28F020-90 ER-20, ER-24, RR-60, AP-316, AP-325, 2046K SmartDie 29024
Not Available

Abstract: No abstract text available
Text: periodic updates of code and data tables are required, the 28F020's reprogram m ability and nonvolatility m , the 80C186 system bus. T he 28F020's architecture m inim izes interface circuitry needed for com plete , 28F020's circuitry and substantially reduces device power consumption. The outputs are placed in a highim , samples from 28F020-150 production lots. 17 28F020 inU NOTICE: This is a production datasheet , and bus operations are combined to perform electrical erasure of the 28F020. Refer to AC C


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PDF 28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150
IN6AG

Abstract: 28F020 intel 28F020
Text: `WLAx/tAH *dvwh/*ds tWHDx/tDH tWHGL Vcc+5% Vcc + 10% Notes 28F020-7 28F020-70I5 ) M in 70 0 40 M ax M in 80 0 40 40 10 6 28F020-90 (5> M in 90 0 40 55 40 55 10 6 28F020-150Î5 ) M in 150 0 , +5% VCc + 10 % Notes 28F020-70 <2,4) 28F020-70 <5) Min 70 0 50 28F020-90 (5) Min 90 0 50 60 , 28F020's circuitry and substantially reduces device power consump tion. The outputs are placed in a , illustrates the power dissipated when updating the 28F020. Table 4 . 28F020 Typical Update Power Dissipation


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PDF 28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020
Not Available

Abstract: No abstract text available
Text: V ç ç + 10% 28F020-7CX2 * *) 28F020-70 <5) 28F020-90 <5) 28F020-150 <5) Unit Characteristics , | . 30 pF 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. I 6-19 AC , 35 0 30 0 Vcc + 5 % Vcc + 10% Notes Min 70 70 70 28 0 40 0 30 0 Max 28F020-70W 28F020-70 <5) Min 80 80 80 30 0 45 0 30 Max 28F020-9CK5 ) Min 90 90 90 35 0 55 Max 28F020-150 (5) Min 150 150 150 50 Max ns ns


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PDF 28F020 2048K 32-Pin -80V05, -80V05
Not Available

Abstract: No abstract text available
Text: limited number of samples from 28F020-150 production lots. 12 MÛ2bl75 01fi5b31 TbO 28F020 , 28F020†™s reprogrammability and non­ volatility make it the obvious and ideal replacement for EPROM , 80C186 system bus. The 28F020†™s architecture minimizes interface cir­ cuitry needed for complete , # at a logic-high level, the standby opera­ tion disables most of the 28F020†™s circuitry and sub , bus operations are com­ bined to perform electrical erasure of the 28F020. Refer to AC Erase


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PDF 28F020 2048K AP-325 -80V05, -80V05 28F020
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