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  You can filter table by choosing multiple options from dropdownShowing 53 results of 53
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
29528F 0103000 Belden Inc Allied Electronics & Automation - $28.25 $28.25
AM28F010-120EC AMD Bristol Electronics 25 - -
AM28F010-120PC AMD Bristol Electronics 3 - -
AM28F010-150JC AMD . Bristol Electronics 25 - -
AM28F010-90JC AMD New Advantage Corporation 1 - -
AM28F010120EC AMD ComS.I.T. 82 - -
AM28F010120PC AMD ComS.I.T. 1,028 - -
AM28F010150JC AMD ComS.I.T. 30 - -
AM28F010200JI AMD ComS.I.T. 1,620 - -
AM28F01070JC AMD ComS.I.T. 8 - -
AM28F010A-120JC AMD Bristol Electronics 308 $4.48 $1.84
AP28F010-120 Rochester Electronics - - -
CAT28F0106I-12 Emerson Process Management Bristol Electronics 2 $9.00 $9.00
CAT28F010N-12 Catalyst Semiconductor Bristol Electronics 32 - -
CAT28F010N-15 Catalyst Semiconductor New Advantage Corporation 780 - -
CAT28F010N15 Emerson Process Management ComS.I.T. 76 - -
CAT28F010NI-90 Catalyst Semiconductor Bristol Electronics 32 - -
CAT28F010P-12 Calmos Technology Inc New Advantage Corporation 4 - -
E28F010-120 Rochester Electronics - - -
E28F010-150 Intel Corporation New Advantage Corporation 65 - -
E28F010-90 Rochester Electronics - - -
E28F010120 Intel Corporation ComS.I.T. 1,835 - -
E28F01090 Intel Corporation Rochester Electronics 5 - -
F28F010-90 Intel Corporation Bristol Electronics 66 - -
IS28F010-70T Integrated Silicon Solution Inc Bristol Electronics 25 $8.96 $4.48
MD28F010-15 Rochester Electronics - - -
MR28F010-15/B Rochester Electronics - - -
MT28F010-15 Rochester Electronics - - -
MT28F010-15 Intel Corporation Rochester Electronics 169 $161.27 $131.03
MT28F010-20/B Intel Corporation Rochester Electronics 516 $146.61 $119.12
N28F010-120 Rochester Electronics LLC Avnet - - -
N28F010-150 Intel Corporation New Advantage Corporation 695 - -
N28F010-200 Intel Corporation New Advantage Corporation 12 - -
N28F010-65 Rochester Electronics - - -
N28F010-90 Intel Corporation New Advantage Corporation 30 - -
N28F010120 Intel Corporation ComS.I.T. 50 - -
N28F010150 Intel Corporation Bristol Electronics 15 - -
N28F010150 Intel Corporation ComS.I.T. 750 - -
N28F010150 Intel Corporation Avnet - - -
N28F01090 Intel Corporation Rochester Electronics 369 - -
N28F01090 Intel Corporation ComS.I.T. 810 - -
P28F010-120 Intel Corporation New Advantage Corporation 3 - -
P28F010-150 Rochester Electronics LLC Avnet - - -
P28F010-150 Intel Corporation Bristol Electronics 13 - -
P28F010-150 Intel Corporation Bristol Electronics 39 - -
P28F010-200 Intel Corporation Bristol Electronics 6 - -
P28F010-200 Intel Corporation Bristol Electronics 3 $14.40 $14.40
P28F010150 Intel Corporation ComS.I.T. 8 - -
TN28F010-120 Intel Corporation Bristol Electronics 1 - -
TN28F010-120 Rochester Electronics - - -
TN28F010-90 Rochester Electronics - - -
VR28F010-90 Rochester Electronics - - -
VR28F010-90 Intel Corporation Rochester Electronics 126 - -

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28F010 datasheet (18)

Part Manufacturer Description Type PDF
28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
28F010 Intel 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
28F010 Intel 1024K (128K x 8) FLASH MEMORY Original PDF
28F010 Intel 1024K (256K x 8) CMOS Flash Memory Scan PDF
28F010 Intel 1024K CMOS Flash Memory Scan PDF
28F010 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F010 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F010 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F010 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F010 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
28F0101024K Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
28F010-15A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
28F010-15F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
28F010-15N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
28F010I-17A Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
28F010I-17F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
28F010I-17N Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF
28F010M-17F Philips Semiconductors 1024K-Bit Flash Memory (128K x 8) Scan PDF

28F010 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
tegra t30

Abstract: No abstract text available
Text: of code and data-tables are required, the 28F010's reprogrammability and non­ volatility make it , . Figure 4 de­ picts two 28F010S tied to the 80C186 system bus. The 28F010†™s architecture minimizes , 28F010S. TSOP is particu­ larly suited for portable equipment and applications requiring large amounts , 28F010†™s circuitry and sub­ stantially reduces device power consumption. The outputs are placed in a , bus operations are com­ bined to perform electrical erasure of the 28F010. Refer to AC Erase


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PDF 1024K 28F010 AP-325 28F010-65 28F010-90 405bl tegra t30
Not Available

Abstract: No abstract text available
Text: . Figure 4 de­ picts two 28F010s tied to the 80C186 system bus. The 28F010†™s architecture minimizes , required, the 28F010†™s reprogrammability and non­ volatility make it the obvious and ideal replacement , 28F010s. TSOP is particu­ larly suited for portable equipment and applications requiring large amounts , operation disables most of the 28F010†™s circuitry and substantially reduces device power consump­ tion , electrical erasure of the 28F010. Refer to AC Erase Characteristics and Waveforms for specific timing


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PDF 1024K 28F010 RR-60, AP-316, AP-325 28F010-65 28F010-90
29F020

Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Text: Vcc Min Ioh = -100 pa 28F010 /28F020 4.6 DC Characteristics— 28F010⠀”CMOS Compatible Commercial , ^ t intel 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) Flash Electrical Chip-Erase , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 , final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072


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PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020
28F010T

Abstract: 28F010
Text: perature Options Added 28F010-65 and 28F010-90 speeds Revised Symbols, i.e., CE, OE, etc. to CE#, OE#, etc , battery-backed static RAM. W here periodic updates of code and data tables are required, the 28F010's reprogram m , interfacing. Figure 3 depicts two 28F010s tied to the 80C186 system bus. The 28F010's architecture m inim izes , logic-high level, the standby operation disables m ost of the 28F010's circuitry and substantially reduces , combined to perform electrical erasure of the 28F010. Refer to AC C haracteristics - W rite/Erase/Program


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PDF 28F010 1024K 32-Pin 32-Lead 28F010-90 28F010-120 28F010-150 8F010-90 28F010T
Not Available

Abstract: No abstract text available
Text: Operations^) Versions Symbol Notes Characteristic 28F010-120 Min 3 Max 28F010-150 Min , rite Cycle Time tAVAv/twC 28F010-120 28F010-150 Min Versions Min 120 Max , board. Ultimately, the final code can be down­ loaded to the device. The 28F010†™s in-circuit , via an edge-connec­ tor, or remotely over a serial communication link. The 28F010†™s electrical , to the 80C186 system bus. The 28F010†™s architecture minimizes interface cir­ cuitry needed for


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PDF A28F010 1024K AP28F010-120 AN28F010-120 AP28F010-150 AN28F010-150 ER-20, ER-24, RR-60, AP-316,
28F010-120

Abstract: 28f010
Text: 28F010-120 , 28F010-150 28F010 AC TESTING INPUT/OUTPUT WAVEFORM For 28F010-90V05 3 .0 - INPUT X , . Input rise and fall times (10% to 90%) <10 ns. AC TESTING LOAD CIRCUIT For 28F010-120 , 28F010-150 AC TESTING LOAD CIRCUIT For 28F010-90V05 AC TEST CONDITIONS For 28F010-120 , 28F010-150 Input Rise , Products 28F010-90V05Í3.4 ) Min 90 90 90 40 0 0 28F010-120 Min 120 120 28F010-150 Min 150 150 150 , 28F010-90V05 <2.4) Min 90 0 28F010-120« ) Min 120 0 28F010-150« ) Min 150 0 Max Max Max Unit


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PDF 28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120
1996 - 28F010

Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
Text: Temperature Options -009 Added 28F010-65 and 28F010-90 speeds - - Revised Symbols , 28F010's reprogrammability and nonvolatility make it the obvious and ideal replacement for EPROM , memory-to-processor interfacing. Figure 3 depicts two 28F010s tied to the 80C186 system bus. The 28F010's , 2.2.1.3 Standby With CE# at a logic-high level, the standby operation disables most of the 28F010's , combined to perform electrical erasure of the 28F010. Refer to AC Characteristics-Write/Erase/Program


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PDF 28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
1996 - 29F020

Abstract: 28F020 TN28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010 P28F010
Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) n n n n n n n Flash , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 , during final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 , that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F010 and 28F020 perform 100,000 erase


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PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010 P28F010
1995 - 28F010

Abstract: P28F010-150 intel 28F010 N28F010-120 80C186 E28F010-120 28F010-120 28f010-150 290207-010
Text: characteristics for 28F010-65 in standard configuration and 28F010-90 28F010-120 and 28F010-150 2 Testing characteristics for 28F010-65 in high speed configuration 20 1 5V 1 5V 30 pF CE Address Access Time , periodic updates of code and data-tables are required the 28F010's reprogrammability and nonvolatility , 80C186 system bus The 28F010's architecture minimizes interface circuitry needed for complete in-circuit , highimpedance state Standby With CE at a logic-high level the standby operation disables most of the 28F010's


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PDF 28F010 1024K 32-Pin 32-Lead AP-325 28F010-65 28F010-90 28F010 P28F010-150 intel 28F010 N28F010-120 80C186 E28F010-120 28F010-120 28f010-150 290207-010
28f010-200

Abstract: P28F010-200 28f010 26F010 290207
Text: 0 40 Max 28F010-150 Min 150 150 150 55 0 55 Max 28F010-200 Min 200 200 200 60 Max Unit ns ns ns ns , 28F010-150 Min 150 0 60 50 10 6 0 20 0 60 20 10 9.5 1.0 Max 28F010-200 Min 200 0 75 50 10 6 0 20 0 60 20 10 , to Chip Enable Low 1 28F010-120 Min 120 0 80 50 10 6 28F010-150 Min 150 0 80 50 10 6 , stat ic RAM. Where periodic updates of code and datatables are required, the 28F010's reprogrammability , de picts two 28F010s tied to the 80C186 system bus. The 28F010's architecture minimizes interface cir


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PDF 28F010 1024K 32-Pin 32-Lead 28F010 32-P1N P28F010-120 P28F010-150 P28F010-200 28f010-200 26F010 290207
1995 - AN28F010-150

Abstract: AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive
Text: the device The 28F010's in-circuit alterability eliminates unnecessary handling and less-reliable , locally via an edge-connector or remotely over a serial communication link The 28F010's electrical , memory-to-processor interfacing Figure 3 depicts two 28F010s tied to the 80C186 system bus The 28F010's architecture , 28F010's circuitry and substantially reduces device power consumption The outputs are placed in a , Time 1 3 120 28F010-150 tAVAV tRC NOTES 1 Whichever occurs first 2 Rise Fall Time s 10


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PDF A28F010 1024K 32-Pin 32-Lead AP28F010-120 AP28F010-150 AN28F010-120 AN28F010-150 AN28F010-150 AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive
1996 - intel 27c512 eprom

Abstract: Needham Electronics PB-10 Programmer 27HC010 intel 27C512 27C256 minato Model 1890A EEPROM 27C256 programmers 1890a RomMax issi 24C04
Text: programmer for specific model support. 28F010 DIP Use AMD/Intel 28F010 part number and disable , disable manufacturer's ID code. PLCCConsult with programmer for specific model support. 28F010 DIPUse AMD/Intel 28F010 part number and disable manufacturer's ID code. PLCCConsult with programmer for , . PLCCConsult with programmer for specific model support. 28F010 DIPUse AMD/Intel 28F010 part number and , . PLCC Consult with programmer for specific model support. 28F010 DIP Use AMD/Intel 28F010 part number


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PDF n7C512 27HC256/27C256 27C256 28F010 28F010 NV81995P601 NV81995PG01- intel 27c512 eprom Needham Electronics PB-10 Programmer 27HC010 intel 27C512 minato Model 1890A EEPROM 27C256 programmers 1890a RomMax issi 24C04
29212* intel

Abstract: No abstract text available
Text: tLZ tH Z tO LZ tDF *OH 28F010-120 Min 120 120 120 50 0 55 0 30 0 6 28F010-150 Min 150 150 150 , . Throughout this document, specific examples highlight conversion of a 28F010-based design to the 28F001BX , package pinouts for the 28F010 and 28F001BX are very similar. The 28F010's NC (no connect) pin, reserved , tWLWH tWHEH tW HW L l VPS te s tAS tAH Vcc ±10% Characteristic 28F010-120 Min 1.0 20 0 50 60 0 20 28F010-150 Min 1.0 20 0 50 60 0 20 Unit fxS Max Max Vpp Setup Time to Chip Enable Low Chip


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PDF 28F256A 28F512 28F010 28F020 28F001BX 28F200BX/002BX 28F200BX-L/002BX-L 28F400BX/004BX 28F400BX-L/004BX-L 29212* intel
D28F010-120P1C4

Abstract: 28F010 28F010150P 28F010P 29020 D28F010 D28F010-12 N28F010-200P1C4
Text: 28F010-150P1C4 Min 150 150 150 65 0 0 28F010-200P1C4 Min 200 200 200 Unit ns ns ns ns ns ns Max Max , down loaded to the device. The 28F010's in-circuit alterability eliminates unnecessary handling and , locally via an edge-connec tor, or remotely over a serial communication link. The 28F010's electrical , system bus. The 28F010's architecture minimizes interface cir cuitry needed for complete in-circuit , of the 28F010's circuitry and substantially reduces device power consump tion. The outputs are placed


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PDF 28F010 1024K T-46-13-27 D28F010-120P1C4 D28F010-150P1C4 D28F010-200P1C4 N28F010-120P1C4 N28F010-150P1C4 N28F010-200P1C4 ER-20, 28F010150P 28F010P 29020 D28F010 D28F010-12 N28F010-200P1C4
27HC010

Abstract: intel 27c512 GANgpro-s Needham Electronics PB-10 Programmer GANgpro RomMax 27c256 27c512 allmax intel 28F010
Text: /27C010 - DIP - PLCC - TSOP* 27HC512/27C512 - DIP - PLCC - TSOP* 27HC256/27C256 - DIP - PLCC 28F010 - DIP , AMD/Intel 28F010 part number and disable m anufacturer's ID code. Consult with programmer for specific , DIP - PLCC - TSOP* 27HC256/27C256 - DIP - PLCC 28F010 - DIP - PLCC - TSOP* Version Proteus V3.61 V3 , . Consult with programmer for specific model support. Use AMD/Intel 28F010 part number and disable m , /27C010 - DIP - PLCC 27HC512/27C512 - DIP - PLCC - TSOP* 27HC256/27C256 - DIP - PLCC 28F010 - DIP - PLCC -


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PDF 28F010 41M101 41M111 41M121 42M101 27C512 27C256 27HC010 intel 27c512 GANgpro-s Needham Electronics PB-10 Programmer GANgpro RomMax allmax intel 28F010
29020

Abstract: No abstract text available
Text: . 30 pF NOTES: 1 . Testing characteristics for 28F010-65 in standard configuration, and 28F010-90 , 28F010-120 , and 28F010-150. 2. Testing characteristics for 28F010-65 in high speed configuration. 20 A , 28F010-65 <5> Min 65 65 65 25 Max Min 70 70 70 28 Max 28F010-90 <5> Min 90 90 90 35 Max 28F010-120 <5> Min Max , Set-Up Time Address Hold Time Vcc ± 5 % Vcc ± 10% Notes 28F010-65W 28F010-65 <5> Min 65 Max Min 70 Max 28F010-90 (5) Min 90 Max 28F010-120 <5) Min Max 28F010-150 <5> Min 150 Max ns ns ns Unit 0 40


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PDF 28F010 1024K 28F010-65 28F010-90 29020
Not Available

Abstract: No abstract text available
Text: for the 28F010. The first is our recommendation to avoid exposing Flash devices to ultraviolet light , in te l 28F010 1024K (128K x 8) FLASH MEMORY SmartDie Product Specification Flash Electrical , Range — Available in 90 ns Access Time Only ■Reference the 28F010 1024K (128K x 8) CMOS Flash , 28F010 1024K (128K x 8) FLASH MEMORY 28F010 1024K (128K x 8) Flash Memory Die Photo 10-2 ■452bl7S Q155bG3 2T1 ■P fö ü U lÄ lÄ K R f 28F010 1024K (128K x 8) FLASH MEMORY in te l


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PDF 28F010 1024K 28F400B EFt-20, ER-24, RR-60, AP-316, AP-325,
PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Text: ercial P ro d u c ts .22 4.6 DC Characteristics- 28F010- CMOS Com patible- Com m ercial P , c ts .25 4.8 DC Characteristics- 28F010- TTLVNMO Com patible- Extended Tem perature P , .29 4.10 DC Characteristics- 28F010- CM OS Com patible- Extended Tem perature P ro d u c ts , .32 4.12 AC C haracteristics- 28F010- Read-Only O peration- Com m ercial and Extended T em perature , 4.14 AC C haracteristics- 28F010- W rite/Erase/Program O nly Operation- Com m ercial and Extended


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PDF 28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N
PLD intel

Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Text: Operation»—Commercial and Extended Temperature Products Versions Notes 28F010-9«V05 (3.4) 28F010-120 28F010-150 Unit , Temperature Products _ Versions Notes 28F010-90V05Ä« ) 28F010-120 (4) 28F010-150« ) Unit Symbol , MflEbl7b 0D7bSÖ0 T43 «ITL2 AC TESTING INPUT/OUTPUT WAVEFORM For 28F010-120 , 28F010-150 INPUT 0.45- X20X , 28F010-120 , 28F010-150 device under test CL - 100 pF _ CL includes Jig Capacitance — Rl = 3.3 Kil 290207-22 , Capacitance Rl = 3.3 KO 290207-23 AC TEST CONDITIONS For 28F010-120 , 28F010-150 Input Rise and Fall Times (10


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PDF Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
intel 28F010

Abstract: 28F010 A28F010 order 231369 231369
Text: Packaging Spec., Order 231369) Integrated Program/Erase Stop Timer Intel's 28F010 CMOS flash memory , . The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory , ; in -system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings. The 28F010 is a 1024-Kb memory organized as 131,072 bytes of eight bits. Intel's 28F010 is offered in 32-pin Plastic DIP or 32-lead PLCC packages. Pin


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PDF A28F010 1024K 28F010 28F010 intel 28F010 A28F010 order 231369 231369
28F010-150P1C4

Abstract: LQXO N28F010-200P1C4 402b eeprom 28f010-200 26f010 29020 intel 3003 3003 intel
Text: Versions 28F010-135P1C4 28F010-150P1C4 28F010-200P1C4 Unit Symbol Characteristic Min Max Min Max Min , Q0b7322 2 ■PG&Oö»«? - T-46-13-27 Versions 28F010-135P1C4 28F010-150P1C4 28F010-200P1C4 Unit , downloaded to the device. The 28F010's in-circuit altera-bility eliminates unnecessary handling and , communication link. The 28F010's electrical chip-erasure, byte reprogrammability, and complete nonvolatility fit , system bus. The 28F010's architecture minimizes interface cir-cuitry needed for complete in-circuit


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PDF GQtj730S 28F010 1024K QQb7327 T-46-13-27 32-PIN 32-LEAD 135ns D28F010-135P1C4 28F010-150P1C4 LQXO N28F010-200P1C4 402b eeprom 28f010-200 26f010 29020 intel 3003 3003 intel
Not Available

Abstract: No abstract text available
Text: . Ultimately, the final code can be down loaded to the device. The 28F010's in-circuit alterability eliminates , communication link. The 28F010's electrical chip-erasure, byte repro grammability, and complete nonvolatility , 28F010S tied to the 80C186 system bus. The 28F010's architecture minimizes interface cir cuitry needed for , operation disables most of the 28F010's circuitry and substantially reduces device power consump tion. The , com bined to perform electrical erasure of the 28F010. Refer to A.C. Erase Characteristics and


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PDF A28F010 1024K AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316, AP-325,
Not Available

Abstract: No abstract text available
Text: serial communication link. The 28F010's electrical chip-erasure, byte repro­ grammability, and , interfacing. Figure 3 de­ picts two 28F010s tied to the 80C186 system bus. The 28F010†™s architecture , logic-high level, the standby operation disables most of the 28F010's circuitry and substantially reduces , the device. The 28F010†™s in-circuit alterability eliminates unnecessary handling and less-reli , 28F010. Refer to A.C. Erase Characteristics and Waveforms for specific timing parameters. Set-up


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PDF A28F010 1024K AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316, AP-325,
Not Available

Abstract: No abstract text available
Text: binary code for the device on outputs l/Oo to I/O7. 28F010 / 28F010I Code - 1011 0100 (B4H) Erase , to 85°C ( 28F010I ) 28F010 /I-12 Parameter 28F010 /I-15 28F010 /I-20 Min. Symbol Max , ), T a - -40dC to +85°C ( 28F0101 ) Symbol Unit 28F010 /1-12 28F010 /I-15 28F010 /1-20 Min , : (408) 748-7700 Fax: (408) 980-8209 CAT28F010/ 28F010I 1 Megabit (128K x 8) CMOS FLASH MEMORY DESCRIPTION Preliminary FEATURES The C AT28F010/ 28F0101 is a high speed 128K x 8-bit electrically


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PDF CAT28F010/28F010I AT28F010/28F0101
1996 - microprocessor 80286 internal architecture

Abstract: intel microprocesser 8086 intel 8086 mcs 96 programming 8088 memory interface SRAM 28F010 8088 microprocessor AP-380 2181G 8088 assembly language manual
Text: below: 28F010 Versions Symbol 28F010-120 Min Characteristic 28F010-150 Min Max 150 , Symbol VCC ± 10% Characteristic 28F010-120 Min Max 28F010-150 Min Unit Max tVPEL , examples highlight conversion of a 28F010-based design to the 28F001BX. However, the techniques shown are , 28F001BX are very similar. The 28F010's NC (no connect) pin, reserved for address A17 on the 28F020 , ( 28F010 to 28F001BX) . 6 2.4 Pinout Adaptability (Other Densities) . 6 3.0 MEMORY MAP


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PDF AP-380 microprocessor 80286 internal architecture intel microprocesser 8086 intel 8086 mcs 96 programming 8088 memory interface SRAM 28F010 8088 microprocessor AP-380 2181G 8088 assembly language manual
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