The Datasheet Archive

Top Results (5)

Part Manufacturer Description Datasheet Download Buy Part
IXFH26N60P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXTH26N60P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
IXTT26N60P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXFT26N60P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXTQ26N60P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Search Stock (9)

  You can filter table by choosing multiple options from dropdownShowing 9 results of 9
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
IXFH26N60P IXYS Corporation Future Electronics 0 $4.72 $4.47
IXFH26N60P IXYS Corporation RS Components 295 £4.28 £4.07
IXFH26N60P IXYS Corporation RS Components 95 £4.82 £4.07
IXFH26N60P IXYS Corporation TME Electronic Components 16 $8.07 $5.02
IXFH26N60P IXYS Corporation Schukat electronic 61 €7.44 €3.32
IXFH26N60P IXYS Corporation Chip1Stop 25 $6.13 $5.56
IXTH26N60P IXYS Corporation Future Electronics 0 $4.33 $3.73
IXTH26N60P IXYS Corporation Schukat electronic 35 €7.42 €3.28
IXTH26N60P IXYS Corporation Chip1Stop 110 $5.52 $4.56

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26N60P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - 26N60P

Abstract:
Text: 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery , mount Space savings High power density DS99435(08/05) IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT , 26N60PS IXFT 26N60P IXFV 26N60P Fig. 3. Output Characte ris tics Fig. 4. RDS(on) Norm alized to 0.5 , D - Amperes 35 40 45 50 IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P IXFV , dimensions. 0.1 1 10 70 80 IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P IXFV


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PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD
2005 - 26n60

Abstract:
Text: reserved IXTV 26N60P Symbol Test Conditions IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P TO , IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P PLUS220SMD (IXTV_S) E E1 A A1 L2 E1 D1 D , 7V 2.8 IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P Fig. 4. RDS(on) Norm alized to 0.5 ID25 , Enhancement Mode Fast Recovery Diode Avalanche Rated IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS VDSS ID25 RDS(on) TO-247 (IXTH) = 600 V = 26 A 270 m Symbol VDSS VDGR VGSS VGSM ID25


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PDF 26N60P 26N60PS O-247 O-268 26n60 DSA003703
2006 - IXFH26N60P

Abstract:
Text: power density DS99435E(12/06) IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Symbol Test , 45 50 IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 9. Source Current vs , IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline 1 Dim. 2 3 , ,727,585 6,759,692 6,771,478 B2 24 27 30 IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem


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PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS O-247) 26N60P 26N60P 26N60PS O-247 IXFH26N60P IXFV26N60P 26n60 26N60PS ixfh26n60 IXFT26N60P IXFV26N60PS PLUS220SMD
2006 - 5007a

Abstract:
Text: 26N50P IXTV 26N60P IXTV 26N60PS VDSS = 600 V ID25 = 26 A RDS(on) 270 m TO-247 (IXTH) G Symbol , IXTT 26N60P Symbol Test Conditions IXTH 26N60P IXTQ 26N60P IXTV 26N60P IXTV 26N60PS , Characteristics @ 125ºC 3.2 24 20 VGS = 10V 7V 2.8 IXTH 26N60P IXTQ 26N60P IXTV 26N60P IXTV 26N60PS Fig. 4 , 8 7 IXTH 26N60P IXTQ 26N60P IXTV 26N60P IXTV 26N60PS Fig. 10. Gate Charge VDS = 300V I D = , -247 (IXTH) Outline TO-3P (IXTQ) Outline IXTH 26N60P IXTQ 26N60P IXTV 26N60P IXTV 26N60PS TO-268 (IXTT


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PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a
2005 - 26n60

Abstract:
Text: 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery , DS99376(08/05) IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P IXTV 26N60P Symbol Test , 21 24 27 30 IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P IXTV 26N60P Fig. 3 , IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P IXTV 26N60P Fig. 9. Source Current vs , IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P IXTV 26N60P TO-3P (IXTQ) Outline TO-247 AD


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PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD
2005 - 26N60P

Abstract:
Text: 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P Characteristic Values (TJ = 25°C, unless otherwise , ris tics @ 125º C 3.2 24 20 VGS = 10V 7V 2.8 IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P Fig , 8 IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P Fig. 10. Gate Charge VDS = 300V I D = 13A , -3P (IXTQ) Outline TO-247 AD (IXTH) Outline IXTH 26N60P IXTQ 26N60P IXTV 26N60PS IXTT 26N60P TO , Enhancement Mode Fast Recovery Diode Avalanche Rated IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV


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PDF 26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248
2006 - max2678

Abstract:
Text: 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS = 600 V ID25 = 26 A RDS(on) 270 m 200 ns trr , IXFV 26N60P IXFV 26N60PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise , IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 3. Output Characteristics @ 125ºC 3.2 24 20 VGS = 10V 7V , Amperes © 2006 IXYS All rights reserved IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 9 , IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline TO-268 (IXFT) Outline PLUS220 (IXFV) Outline 1


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PDF 26N60P 26N60PS O-247 O-268 PLUS220 max2678
2005 - Not Available

Abstract:
Text: 26N60P Symbol Test Conditions IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P TO-3P (IXFQ) Outline , IXFV 26N60P PLUS220 (IXFV) Outline E E1 L2 A A1 E1 IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P D1 D L3 L1 L 3X b 2X e c A2 Terminals: 1 - Gate 3 - Source 2 - Drain TAB - , Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) trr TO-247 (IXFH) 600 V 26 A 270 m 200 ns Symbol VDSS VDGR


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PDF 26N60P 26N60PS O-247 405B2 26N60P PLUS220
2006 - Not Available

Abstract:
Text: protect Advantages Easy to mount Space savings High power density DS99435E(12/06) IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless , ,478 B2 24 27 30 IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 3. Output , 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 9. Source Current vs. Source-To-Drain Voltage Fig , IXFT 26N60P IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline 1 Dim. 2 3 Millimeter


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PDF IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS 26N60P 26N60P 26N60PS O-247 PLUS220SMD
2006 - 16N80P

Abstract:
Text: limits, test conditions, and dimensions. F_16N80P (67) 04-28-06.xls IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline 1 Dim. 2 3 Millimeter Min. Max. A 4.7


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PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS 16N80P PLUS220SMD siemens
2006 - Not Available

Abstract:
Text: .xls IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline 1 Dim. 2 3


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PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS
STW20N60

Abstract:
Text: ) 26N60P (2) IXT(1)30N60P(2) Power MOSFET selection ultimately comes down to the device offering best , ) 26N60P (2) IXF(1)30N60P IXF(1)30N60P(2) IXF(1)36N60P IXFR36N60P IXF(1)48N60P IXFN48N60P IXFR48N60P , ) 26N60P (2) IXT(1)30N60P(2) Power MOSFET selection ultimately comes down to the device offering best , ) 26N60P (2) IXF(1)30N60P IXF(1)30N60P(2) IXF(1)36N60P IXFR36N60P IXF(1)48N60P IXFN48N60P IXFR48N60P , ) 26N60P (2) IXT(1)30N60P(2) Power MOSFET selection ultimately comes down to the device offering best


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PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50P IXFB100N50 STW20N60FD IXFB100N50P TO-264 IXFH30N60P 15N60P ixfn100n50p IXFN64N50PD2
2n60p

Abstract:
Text: 0.33 60 0.31 V, H IXT(1)10N60P 600 9 0.74 30 0.75 P, A, I IXF(1) 26N60P , H, T, K IXT(1) 26N60P (2) 600 26 0.27 72 0.27 V, H, Q, T IXF(1)48N60P 600


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PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET 15N60P Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive
2008 - 7N60B equivalent

Abstract:
Text: 22N60P IXFV 22N60PS IXFV 26N50P IXFV 26N50PS IXFV 26N60P IXFV 26N60PS IXFV 30N50P IXFV 30N50PS , IXFH 22N50P IXFH 22N60P IXFH 24N80P IXFH 26N50P IXFH 26N50Q IXFH 26N60P IXFH 26N60Q IXFH 28N50Q , , 104 110 110 110 109 106 110 109 107 106 109 107 106 109 106 IXFT 26N50Q IXFT 26N60P , 26N60P IXTH 26P20P Ø IXTH 30N50L2 IXTH 30N50P IXTH 30N60P IXTH 36N50P Ø IXTH 48N20T IXTH 48P20P Ø


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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