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Part Manufacturer Description Datasheet Download Buy Part
IXFH26N50P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXFQ26N50P3 IXYS Corporation Power Field-Effect Transistor,
IXFA26N50P3 IXYS Corporation Power Field-Effect Transistor,
IXFH26N50P3 IXYS Corporation Power Field-Effect Transistor,
IXTT26N50P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
IXFP26N50P3 IXYS Corporation Power Field-Effect Transistor,
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IXFH26N50P IXYS Corporation Future Electronics 30 $4.55 $4.11
IXFH26N50P IXYS Corporation Schukat electronic 153 €7.00 €2.90
IXFH26N50P IXYS Corporation New Advantage Corporation 1,410 $6.50 $6.07
IXFH26N50P3 IXYS Corporation element14 Asia-Pacific - $5.98 $4.11
IXTQ26N50P IXYS Corporation Future Electronics - $2.81 $2.54

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26N50P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - Not Available

Abstract: No abstract text available
Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = , savings High power density DS99206E(12/05) IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Symbol , ,727,585 6,759,692 6,771,478 B2 IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 1. Output , Degrees Centigrade 100 125 150 IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 8 , change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXTQ 26N50P IXTT


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PDF 26N50P 26N50PS PLUS220 26N50P IXTV26N50PS O-268
2004 - IXTQ26N50P

Abstract: PLUS220SMD 26n50ps b5237
Text: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET , savings High power density DS99206(11/04) IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Symbol Test , ,463 6,727,585 6,759,692 2 - Drain TAB - Drain IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Fig , 150 IXTQ 26N50P IXTV 26N50P IXTV 26N50PS Fig. 8. Transconductance Fig. 7. Input Adm ittance , , test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTQ 26N50P IXTV 26N50P


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PDF 26N50P 26N50PS 15noCoulombs 26N50P IXTQ26N50P PLUS220SMD 26n50ps b5237
2005 - PLUS220SMD

Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS(on) trr , TO-247 AD (IXFH) Outline S 3600 IXFV 26N50P IXFV 26N50PS ns Ciss Coss VGS = 0 V , D - Amperes IXFV 26N50P IXFV 26N50PS 2.2 1.8 18 15 12 9 1.4 6 TJ = 25C 1 3 , 125C 20 I D = 13A 7 50 I S - Amperes IXFV 26N50P IXFV 26N50PS 2 TJ = 25C 10 , 26N50P IXFV 26N50P IXFV 26N50PS Fig. 13. Maxim um Transient Thermal Resistance R ( t h ) J C -


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PDF 26N50P 26N50PS O-247) PLUS220SMD
2006 - t26n

Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS(on) trr , DS99310E(03/06) IXFC 26N50P Symbol gfs Test Conditions Characteristic Values (TJ = 25° C , ,692 6,710,463 6,771,478 B2 IXFC 26N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2 , 150 IXFC 26N50P Fig. 8. Transconductance Fig. 7. Input Admittance 45 40 40 35 35 , 100 V DS - Volts 1000 IXFC 26N50P Fig. 13. Maximum Transient Thermal Resistance R (th


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PDF 220TM 26N50P 02-09-06-B t26n
2006 - 26N50P

Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = , ) IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Symbol Test Conditions Characteristic Values , ,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output , 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 8. Transconductance Fig. 7. Input Admittance 45


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PDF 26N50P 26N50PS 26N50P IXTV26N50PS O-268 IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
2005 - Not Available

Abstract: No abstract text available
Text: Sheet IXFH 26N50P IXFT 26N50P VDSS ID25 RDS(on) trr = = 500 V 26 A 230 m 250 ns Symbol , ) IXFH 26N50P IXFT 26N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise , ,759,692 IXFH 26N50P IXFT 26N50P Fig. 1. Output Characteristics @ 25ºC 30 27 24 21 VGS = 10V 7V , - Amperes TC - Degrees Centigrade © 2005 IXYS All rights reserved IXFH 26N50P IXFT 26N50P , 26N50P IXFT 26N50P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 1.00


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PDF 26N50P 26N50P O-247 O-268
2006 - 26n50

Abstract: IXFH .26n50 PLUS220SMD
Text: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS , IXFV 26N50P IXFV 26N50PS VGS = 0 V, VDS = 25 V, f = 1 MHz 1 2 Terminals: 1 - Gate 2 - , 35 30 g f s - Siemens 50 I D - Amperes IXFV 26N50P IXFV 26N50PS TJ = 125ºC 25ºC , . 10 100 V DS - Volts 1000 IXFH 26N50P IXFV 26N50P IXFV 26N50PS Fig. 13. Maximum , DS99276E(12/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless


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PDF 26N50P 26N50PS 26n50 IXFH .26n50 PLUS220SMD
2006 - Not Available

Abstract: No abstract text available
Text: 26N50P IXFV 26N50PS N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test , -247 AD (IXFH) Outline S ns Ciss Coss 16 IXFV 26N50P IXFV 26N50PS VGS = 0 V, VDS = 25 , 18 R DS(on) - Normalized 20 I D - Amperes IXFV 26N50P IXFV 26N50PS 6V 16 14 12 , Amperes IXFV 26N50P IXFV 26N50PS TJ = 125ºC 25ºC - 40ºC 25 20 TJ = - 40ºC 25ºC , IXFV 26N50P IXFV 26N50PS Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W


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PDF 26N50P 26N50PS
2006 - Not Available

Abstract: No abstract text available
Text: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS(on , Space savings l mΩ DS99227E(10/05 ) IXTC 26N50P Symbol gfs Test Conditions , ,727,585 6,759,692 6,771,478 B2 IXTC 26N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2 , IXTC 26N50P Fig. 8. Transconductance Fig. 7. Input Admittance 45 40 40 35 35 g f , - Volts 1000 IXTC 26N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC


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PDF ISOPLUS220TM 26N50P Isolated55 2-06-05-A
2006 - Not Available

Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS(on) ≤ trr , (03/06) IXFC 26N50P Symbol gfs Test Conditions Characteristic Values (TJ = 25° C , ,692 6,710,463 6,771,478 B2 IXFC 26N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2 , 150 IXFC 26N50P Fig. 8. Transconductance Fig. 7. Input Admittance 45 40 40 35 , V DS - Volts 1000 IXFC 26N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC -


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PDF 220TM 26N50P 02-09-06-B
2006 - t26n

Abstract: 7V24
Text: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 RDS(on , (10/05 ) IXTC 26N50P Symbol gfs Test Conditions Characteristic Values (TJ = 25° C , ,478 B2 IXTC 26N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output , -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXTC 26N50P Fig. 8 , change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXTC 26N50P


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PDF ISOPLUS220TM 26N50P 2-06-05-A t26n 7V24
2004 - Not Available

Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTC 26N50P VDSS = 500 V = 13 A , motor control m High power density DS99227(10/04) IXTC 26N50P Symbol gfs Test , ,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTC 26N50P Fig. 1. Output , -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTC 26N50P Fig. 8 , 100 V D S - V olts 1000 IXTC 26N50P Fig. 13. Maximum Transient Therm al Resistance R ( t


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PDF 26N50P
2005 - Not Available

Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V , rights reserved V AC motor control DS99310(1/05) IXFC 26N50P Symbol gfs Test , 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFC 26N50P Fig. 1. Output , -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFC 26N50P Fig , 100 V D S - Volts 1000 IXFC 26N50P Fig. 13. Maximum Transient Therm al Resistance R


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PDF 26N50P
STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 IXFH30N60P ixfn100n50p IXFN48n60p ixys ixfn100n50p
Text: )22N50P(2) IXTC26N50P IXT(1) 26N50P (2) IXT(1)30N50P(2) IXT(1)36N50P(2) IXTQ44N50P 500 500 500 , IXFP8N50PM IXF(1)12N50P IXFP12N50PM IXF(1)16N50P IXFC16N50P IXF(1)22N50P(2) IXFC26N50P IXF(1) 26N50P (2 , )22N50P(2) IXTC26N50P IXT(1) 26N50P (2) IXT(1)30N50P(2) IXT(1)36N50P(2) IXTQ44N50P 500 500 500 , IXFP8N50PM IXF(1)12N50P IXFP12N50PM IXF(1)16N50P IXFC16N50P IXF(1)22N50P(2) IXFC26N50P IXF(1) 26N50P (2 , )22N50P(2) IXTC26N50P IXT(1) 26N50P (2) IXT(1)30N50P(2) IXT(1)36N50P(2) IXTQ44N50P 500 500 500


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PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 IXFH30N60P ixfn100n50p IXFN48n60p ixys ixfn100n50p
2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: )36N50P 500 23 0.19 82 0.6 C, R 21 1.0 P, A IXF(1) 26N50P (2) 500 26 , ) 26N50P (2) 500 26 0.23 60 0.31 V, Q IXF(1)44N50P 500 44 0.14 104 0.19


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PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
2006 - 5007a

Abstract: No abstract text available
Text: PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS VDSS = 600 V ID25 = 26 A RDS(on) 270 m TO-247 (IXTH) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150


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PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a
2008 - 7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: 22N60P IXFV 22N60PS IXFV 26N50P IXFV 26N50PS IXFV 26N60P IXFV 26N60PS IXFV 30N50P IXFV 30N50PS , IXFC 20N80P IXFC 22N60P IXFC 26N50P IXFC 26N50P IXFC 30N60P IXFC 36N50P IXFC 52N30P IXFC 74N20P , IXFH 22N50P IXFH 22N60P IXFH 24N80P IXFH 26N50P IXFH 26N50Q IXFH 26N60P IXFH 26N60Q IXFH 28N50Q , 220N075T IXTA 220N075T7 IXTA 240N055T IXTA 240N055T7 IXTB 30N100L IXTB 62N50L IXTC 26N50P Ø IXTC


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
2013 - Not Available

Abstract: No abstract text available
Text: IXYS CORPORATION, All Rights Reserved IXYS REF: F_ 26N50P3 (W6) 3-26-12 IXFA26N50P3 IXFP26N50P3


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PDF IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 O-220AB O-263 O-247 O-220
2014 - Not Available

Abstract: No abstract text available
Text: Rights Reserved IXYS REF: F_ 26N50P3 (W6) 3-20-14-A IXYS


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PDF IXFJ26N50P3 O-247TM E153432 26N50P3 0-14-A
2012 - W6 13A Diode

Abstract: IXFA26N50P3 IXFQ26N50 IXFP26N50 ixfh26n50p3
Text: REF: F_ 26N50P3 (W6) 3-26-12 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 TO-3P Outline TO


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PDF O-263 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 O-220AB O-247 O-220 W6 13A Diode IXFQ26N50 IXFP26N50 ixfh26n50p3
2012 - Not Available

Abstract: No abstract text available
Text: IXYS CORPORATION, All Rights Reserved IXYS REF: F_ 26N50P3 (W6) 3-26-12 IXFA26N50P3 IXFP26N50P3


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PDF IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 O-263 O-220AB VDSS70 O-247 O-220
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