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RF pcb antenna 125khz

Abstract: 125khz RFID schematic PCB RFID Antenna 125KHz pcb antenna 134.2kHz CAS143 CAS143-47 125kHz RFID antenna PCB Antenna 125KHz antenna 125khz 134.2kHz
Text: 2.66mH 2.66mH 2-3 ( Z-axis ) 8-6 ( Y-axis ) %5± Inductance 5-6 ( X-axis ) 3.8mH


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PDF CAS143 EIA481 500pcs/reel 100mm 160mm 500pcs 400mm RF pcb antenna 125khz 125khz RFID schematic PCB RFID Antenna 125KHz pcb antenna 134.2kHz CAS143 CAS143-47 125kHz RFID antenna PCB Antenna 125KHz antenna 125khz 134.2kHz
Not Available

Abstract: No abstract text available
Text: 134.2kHz, 1Vac 45 ( typ.) CAS143-47 Unloaded Q 5% 44 ( typ.) ± S.R.F 2.66mH 5% 5% ± Unloaded Q 2.66mH Measuring condition 2-3 ( Z-axis ) 5% ± CAS143


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PDF CAS143 CAS143-26 CAS143-47 17nce 17-Aug-11
2001 - 7v71

Abstract: No abstract text available
Text: Tch Tstg Ratings 600 ±9 ±32 ±35 9 117.6 60 +150 -55 to +150 *1 L= 2.66mH , Vcc


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PDF 2SK2760-01R 600tic 7v71
2001 - Not Available

Abstract: No abstract text available
Text: (G) Source(S) *1 L= 2.66mH , Vcc=60V Electrical characteristics (Tc =25°C unless otherwise


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PDF 2SK2760-01R
2001 - 2SK2760-01R

Abstract: No abstract text available
Text: °C °C Drain(D) r new fo *1 L= 2.66mH , Vcc=60V . e d Gate(G) n sig Source(S


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PDF 2SK2760-01R 2SK2760-01R
2001 - Not Available

Abstract: No abstract text available
Text: V A A V A mJ W °C °C Equivalent circuit schematic Drain(D) *1 L= 2.66mH , Vcc=60V Electrical


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PDF 2SK2760-01R
DIP28H

Abstract: LB11847 LB11947
Text: IO2(leak) ST=0V,VO=0V VSUS L= 26.6mH ,IO=1.5A VIH Ta=25 (PWM,PHASE,MD,ST


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PDF N7318 LB11947 LB119475VPWMDCIC2 /O1106 /D1002 B8-6485 tW20s DIP28H LB11847 LB11947
2003 - Not Available

Abstract: No abstract text available
Text: =25°C,IAS=1.7A,L= 266mH ,Vcc=80V,RG=50 EAS limited by maximum channel temperature and avalanche current. See


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PDF 2SK3787-01MR O-220F
2002 - Not Available

Abstract: No abstract text available
Text: temperature. VDD =-25V, starting TJ = 25°C, L = 266mH Peak IL = -0.75A, VGS = -10V Foot Notes: ISD


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PDF 90397F MO-036AB) IRFG9110 JANTX2N7335 JANTXV2N7335 MIL-PRF-19500/599 IRFG9110 266mH -100V,
2002 - IRFG9110

Abstract: KTC3202-TP-Y JANTX2N7335 JANTXV2N7335 MO-036AB
Text: -0.75A, di/dt -75A/µs, maximum junction temperature. VDD =-25V, starting TJ = 25°C, L = 266mH Peak


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PDF 90397G MO-036AB) IRFG9110 JANTX2N7335 JANTXV2N7335 MIL-PRF-19500/599 266mH -100V, IRFG9110 KTC3202-TP-Y JANTX2N7335 JANTXV2N7335 MO-036AB
Not Available

Abstract: No abstract text available
Text: ˆ’75A/µs, maximum junction temperature.  VDD =-25V, starting TJ = 25°C, L = 266mH Peak IL = -0.75A


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PDF 90397G MO-036AB) IRFG9110 JANTX2N7335 JANTXV2N7335 MIL-PRF-19500/599 inve13a. 266mH
Not Available

Abstract: No abstract text available
Text: ) Characteristics 600 ± ± ± 9 92 30 9 117.6 60 150 -55 ~ +150 Unit V A A V A m J W °C °C L= 2.66mH , Vcc=60V T c h á


OCR Scan
PDF 2SK2760-01R
2SK2760-01R

Abstract: mosfet 600V 100A
Text: and storage temperature range Te 150 °C T.t. -55 - +150 °C 3K L= 2.66mH , Vcc=60V 6. Electrical


OCR Scan
PDF 2SK276Q-01R 0257-R-004a 0257-R-003a 2SK2760-01R mosfet 600V 100A
2002 - IRFG6110

Abstract: JANTX2N7336 JANTXV2N7336 MO-036AB 90436
Text: 300 µs; Duty Cycle 2% VDD = - 25V, starting TJ = 25°C, L= 266mH , Peak IL = - 0.75A, VGS = -10V


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PDF 90436F MO-036AB) IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 150mH, IRFG6110 JANTX2N7336 JANTXV2N7336 MO-036AB 90436
Not Available

Abstract: No abstract text available
Text: = 266mH , Peak IL = -0.75A, VGS = -10V Peak IL = 1.0A, VGS = 10V Å ISD ≤ -0.75A, di/dt ≤ -75A


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PDF PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 MO-036AB) 266mH, -75A/Â
2010 - 100V Single P-Channel HEXFET MOSFET

Abstract: 12v 10A dc motor mosfet driver
Text: °C, L= 266mH , Peak IL = -0.75A, VGS = -10V Å ISD -0.75A, di/dt -75A/ µs, VDD -100V, TJ 150


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PDF PD-90436G IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 MO-036AB) 150mH, 266mH, 100V Single P-Channel HEXFET MOSFET 12v 10A dc motor mosfet driver
2008 - soft start motor control diagram

Abstract: 45V 10A dc motor driver 7318-1 DIP28H LB11947 dc motor soft start EN7318A
Text: Output sustaining voltage VSUS L = 26.6mH , IO = 1.5A *1 50 V Logic input voltage VIH


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PDF EN7318A LB11947 LB11947 soft start motor control diagram 45V 10A dc motor driver 7318-1 DIP28H dc motor soft start EN7318A
2008 - Not Available

Abstract: No abstract text available
Text: , Sink ST = 0V, VO = 0V, Source L = 26.6mH , IO = 1.5A *1 Ta = 25°C Ta = 25°C Ta = -20 to 85°C *1 Ta = -20


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PDF EN7318A LB11947 LB11947
2004 - CK410

Abstract: CY28437 DOT96
Text: -MHz CPUT and CPUC Period Measured at crossing point VOX 4.998500 5.001500 ns TPERIOD 266-MHz , TPERIODSS 266-MHz CPUT and CPUC Period, SSC Measured at crossing point VOX 3.748875 3.769975 ns , point VOX 4.913500 5.086500 ns TPERIODAbs 266-MHz CPUT and CPUC Absolute period Measured , Measured at crossing point VOX 4.913500 5.111634 ns TPERIODSSAbs 266-MHz CPUT and CPU C


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PDF CY28437 CK410 100-MHz 96-MHz 48-MHz 56-pin 33-MHz DOT96 CY28437 CK410 DOT96
2007 - PC16450

Abstract: xcore MPC8313EEC SGMII RGMII bridge SHA-256 PC16550 MPC860T MPC8313E MPC8313 MPC8260
Text: 50% read/write 266MHz , 32 bits Rs = 22 Rt = 50 200MHz, 32 bits single pair of clock Capacitive , 0.266 50% read/write 266MHz , 32 bits 0.246 Rs = 22 Rt = 75 200MHz, 32bits 0.225 single pair of


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PDF MPC8313EEC MPC8313E MPC8313E PC16450 xcore MPC8313EEC SGMII RGMII bridge SHA-256 PC16550 MPC860T MPC8313 MPC8260
2006 - samsung pc2-6400

Abstract: PC2-3200 PC2-5300 PC2-6400 W3HG128M64EEU-D4 A7142
Text: -3200 Clock Speed 400MHz 333MHz 266MHz 200MHz CL-tRCD-tRP 6-6-6 5-5-5 4-4-4 3-3-3 , W3HG128M64EEU534D4xxG 266MHz /533Mb/s 4 4 4 29.20mm (1.150") TYP W3HG128M64EEU403D4xxG 200MHz/400Mb


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PDF W3HG128M64EEU-D4 128Mx64 200-pin, W3HG128M64EEU 128Mx8, PC2-6400* PC2-5300* PC2-4200 PC2-3200 samsung pc2-6400 PC2-3200 PC2-5300 PC2-6400 W3HG128M64EEU-D4 A7142
2006 - TOP SIDE MARKING OF MICRON ddr2

Abstract: DDR2 samsung pc2-6400 date code marking capacitor samsung 127 U37Y WV3HG128M72AER-AD6 PC2-6400 PC2-5300 PC2-4300 PC2-3200 date code marking samsung
Text: 266MHz 333MHz 400MHz CL-tRCD-tRP 3-3-3 4-4-4 5-5-5 6-6-6 * Consult factory for , * WV3HG128M72AER534AD6xxG 266MHz /533Mb/s 4 4 4 18.29mm (0.72") WV3HG128M72AER403AD6xxG 200MHz/400Mb/s


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PDF WV3HG128M72AER-AD6 128Mx72 240-pin, WV3HG128M72AER 128Mx4 240-pin PC2-6400* PC2-5300* PC2-4300 TOP SIDE MARKING OF MICRON ddr2 DDR2 samsung pc2-6400 date code marking capacitor samsung 127 U37Y WV3HG128M72AER-AD6 PC2-6400 PC2-5300 PC2-3200 date code marking samsung
2006 - DM 024

Abstract: PC2-3200 PC2-5300 WV3HG32M40SEU-PD4 DDR2 DIMM 240 pinout micron
Text: -5300* PC2-4200 PC2-3200 Clock Speed 333MHz 266MHz 200MHz CL-tRCD-tRP 5-5-5 4-4-4 , WV3HG32M40SEU534PD4xxG 266MHz /533Mb/s 4 4 4 30.00mm (1.181") TYP WV3HG32M40SEU403PD4xxG 200MHz/400Mb


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PDF WV3HG32M40SEU-PD4 128MB 32Mx40 200-pin, WV3HG32M40SEU 512Mb 32Mx16, PC2-5300* PC2-4200 DM 024 PC2-3200 PC2-5300 WV3HG32M40SEU-PD4 DDR2 DIMM 240 pinout micron
2006 - Samsung 6400

Abstract: samsung pc2-6400 PC2-3200 PC2-5300 PC2-6400 WV3HG64M72EER-PD4
Text: -3200 PC2-4200 PC2-5300* PC2-6400* Clock Speed 200MHz 266MHz 333MHz 400MHz , WV3HG64M72EER534PD4xxG 266MHz /533Mb/s 4 4 4 30.00mm (1.181") TYP WV3HG64M72EER403PD4xxG 200MHz/400Mb


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PDF WV3HG64M72EER-PD4 512MB 64Mx72 200-pin WV3HG64M72EER 64Mx8 200-pin PC2-6400* PC2-5300* Samsung 6400 samsung pc2-6400 PC2-3200 PC2-5300 PC2-6400 WV3HG64M72EER-PD4
2000 - CY2210

Abstract: W133 W134M W134S W158 W159 W161
Text: [7] 266-MHz Cycle-to-Cycle Jitter [7] ns 60 ps 100 ps - Total Jitter over , V 12 50 266-MHz Total Jitter over 2, 3, or 4 Clock Cycles tSTEP Phase Aligner Phase


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PDF W134M/W134S 800-MHz CY2210, 24-pin, 150-mil W134M/W134S CY2210 W133 W134M W134S W158 W159 W161
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