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264-byte Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - sram 2112

Abstract: 001H 106H NXSF014B-0699 SFAN-02
Text: ­ High-density, low-voltage & power, cost-effective ­ Small 264-byte sectors ­ 10K/100K write cycles, ten years data retention · On-chip Serial SRAM ­ Dual 264-byte Read/Write SRAM buffers ­ Use , an entire 264-byte sector out of the device. Data can be read directly from a sector in the Flash , is the integrated Serial SRAM and its associated Program Buffer. Together, the 264-byte Serial SRAM and 264-byte Program Buffer provide up to 528-bytes of usable SRAM storage. The SRAM can be used in


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PDF NX25F011A NX25F041A 264-byte 10K/100K NXSF014B-0699 sram 2112 001H 106H NXSF014B-0699 SFAN-02
1998 - sram 2112

Abstract: 001H 106H NXSF014B-0699
Text: ­ High-density, low-voltage & power, cost-effective ­ Small 264-byte sectors ­ 10K/100K write cycles, ten years data retention · On-chip Serial SRAM ­ Dual 264-byte Read/Write SRAM buffers ­ Use , allows a single byte , or specified sequence of bytes, to be read without having to clock an entire 264-byte , Buffer. Together, the 264-byte Serial SRAM and 264-byte Program Buffer provide up to 528-bytes of , . Thus, the entire 264-bytes , a single byte , or a sequence of bytes can be read from or written to the


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PDF NX25F011A NX25F041A 264-byte 10K/100K NXSF014B-0699 sram 2112 001H 106H NXSF014B-0699
1998 - sram 2112

Abstract: TSOP 28 SPI memory Package flash 25F021 001H pb sram sf001
Text: Small 264-byte sectors ­ 10K/100K write cycles, ten years data retention · On-chip Serial SRAM ­ Dual 264-byte Read/Write SRAM buffers ­ Use in conjunction with or independent of Flash ­ Off-loads , bytes, to be read without having to clock an entire 264-byte sector out of the device. Data can be , Byte-Addressable Sectors of 264-Bytes each Sector 1 001H Sector 1 001H Sector 1 001H Byte 0 000H , IS25F041A is the integrated Serial SRAM and its associated Program Buffer. Together, the 264-byte Serial


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PDF IS25F011A IS25F021A IS25F041A 264-byte 10K/100K IS25F041A-5V-R sram 2112 TSOP 28 SPI memory Package flash 25F021 001H pb sram sf001
25F041

Abstract: 25F021 D61D5
Text: transistor EEPROM memory - High-density, low-voltage/power, cost-effective - Small 264-byte sectors - 10K , popular microcontrollers - Clock operation as fast as 16MHz On-chip Serial SRAM - Dual 264-byte read , be read without having to clock an entire 264-byte sector out of the device. Data can be read , associated Program Buffer. Together, the 264-byte Serial SRAM and 264-byte Program Buffer provide up to 528 , . Thus, the entire 264-bytes , a single byte , or a sequence of bytes can be Integrated Silicon Solution


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PDF IS25F011A IS25F021A IS25F041A 264-byte 10K/100K 16MHz PK13197T28 25F041 25F021 D61D5
1998 - 25F041A

Abstract: NEXCOM
Text: , cost-effective - Small 264-byte sectors - 10K/100K write cycles, 10 years data retention n On-chip Serial SRAM - Dual 264-byte read/write SRAM buffers - Use in conjunction with or independent of Flash - , entire 264-byte sector out of the device. Data can be read directly from a sector in the flash memory , Program Buffer. Together, the 264-byte Serial SRAM and 264-byte Program Buffer provide up to 528 , . The SRAM is fully byte-addressable. Thus, the entire 264-bytes , a single byte , or a sequence of bytes


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PDF IS25F011A IS25F021A IS25F041A 16MHz 264-byte 10K/100K 25F041A NEXCOM
Not Available

Abstract: No abstract text available
Text: , low-voltage/power, cost-effective - Small 264-byte sectors - 10K/100K write cycles, ten years data retention · On-chip Serial SRAM - Dual 264-byte Read/Write SRAM buffers - Use in conjunction with or , , to be read without having to clock an entire 264-byte sector out of the device. Data can be read , SRAM and its associated Program Buffer. Together, the 264-byte Serial SRAM and 264-byte Program Buffer , byte-addressable. Thus, the entire 264-bytes , a single byte , or a sequence of bytes can be read from, or written to


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PDF IS25F011A IS25F021A IS25F041A 264-byte 10K/100K IS25F041A-3V-R IS25F041A-5V-R 28-pin,
Not Available

Abstract: No abstract text available
Text: /power, cost-effective - Small 264-byte sectors - 10K/100K write cycles, ten years data retention â , SRAM - Dual 264-byte Read/Write SRAM buffers - Use in conjunction with or independent of Flash - , sequence of bytes, to be read without having to clock an entire 264-byte sector out of the device. Data , 2048 Byte-Addressable Sectors of 264-Bytes each Byte 0 000H ,1 Byte 1 001H Byte 2-261 , 264-byte Serial SRAM and 264-byte Program Buffer provide up to 528-bytes of usable SRAM storage. The


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PDF IS25F011A IS25F021A IS25F041A 264-byte 10K/100K PK13197T28
1998 - 001H

Abstract: NX25F011B NX25F021B NX25F041B NXSF016C-0600 CF15-CF9
Text: · 0.35µ NexFlash Memory Technology ­ 1M/2M/4M-bit with 512/1024/2048 sectors ­ Small 264-byte , Optional 8KB (32 sector) block erase for faster programming · On-chip Serial SRAM ­ Single 264-byte , , to be read without having to clock an entire 264-byte sector out of the device. Data can be read , . Thus, the entire 264-bytes , a single byte , or a sequence of bytes can be read from, or written to the , commands are completed by asserting the CS pin high. Note that the entire 264-byte contents of a Flash


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PDF NX25F011B NX25F021B NX25F041B 264-byte NX25F021B-3S* NX25F021B-5V* 28-pin, NX25F021B-5S* NX25F041B-3V* 001H NX25F011B NX25F021B NX25F041B NXSF016C-0600 CF15-CF9
CO2V

Abstract: No abstract text available
Text: : (256+8) Byte - Block Erase : (4K+128) Byte · M ulti-B lo ck Erase - Status R egister Features · A utom atic Program and Erase - Page Program : (256+8) Byte - Block Erase : (4K+128)B yte - Status R egister C urrent D escription G eneral D escription A program operation program s the 264-byte page In typically 300us (500us/250us)* and an erase operation can be perform ed In typically 6m s on e ither a 4K- byte block o r m ultiple block. New D escription G eneral D escription A program operation program s the 264-byte page in


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PDF SAMSF002 KM29N040T KM29V040T A18/19 528-byte 250us 32000T/R 32000T/R CO2V
2001 - NX25F021B-5V

Abstract: 001H NX25F011B NX25F021B NX25F041B NXSF016F-1201
Text: . · 0.35µ NexFlash Memory Technology ­ 1M/2M/4M-bit with 512/1024/2048 sectors ­ Small 264-byte , MHz · On-chip Serial SRAM ­ Single 264-byte Read/Write SRAM buffer ­ Use in conjunction with or , an entire 264-byte sector out of the device. Data can be read directly from a sector in the Flash , . Thus, the entire 264-bytes , a single byte , or a sequence of bytes can be read from, or written to the , the entire 264-byte contents of a Flash sector or the SRAM does not have to be accessed all at once


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PDF NX25F011B, NX25F021B, NX25F041B NXSF016F-1201 NX25F011B NX25F021B NX25F021B-3S* NX25F021B-5V* 28-pin, NX25F021B-5V 001H NX25F011B NX25F021B NX25F041B NXSF016F-1201
1998 - 12-bytes

Abstract: SFAN-02 IS25F080A "IS26F041A" checksum algorithm CRC
Text: (typically single bit failures). ISSI specifies Serial Flash devices with 264-byte sectors (2xF011A, 2xF021A , Figure 2. Device Information Sector (DIS) Format 4 SYNC: ( Byte 0) The first byte of the DIS is the Sync byte . Similar to the Tag/Sync bytes of the main array this location has a value of "C9H". The Sync byte can be used as a sync-detect to verify that the instruction sequence is clocked into the , as well. Immediately following the first Sync location are byte locations 1-43, which are reserved


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PDF SFAN-02 SF009-1B 16-bit 12-bytes SFAN-02 IS25F080A "IS26F041A" checksum algorithm CRC
1997 - 8M-BIT CMOS SERIAL FLASH GENERAL

Abstract: AT8051 TQFP 100 PACKAGE AT27BV800 AT27BV512 AT27BV4096 AT27BV256 AT27BV1024 AT27BV040 80C31 MICROCONTROLLER development board ATMEL
Text: Flash with Two 264-Byte SRAM Buffers Now AT45DB041 5 MHz 4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now AT45DB081 10 MHz 8M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now AT45DB161 10 MHz 16M bit, 2.7-Volt Only , bit, 5.0-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now AT45D041 10 MHz 4M bit, 5.0-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now AT45D081 10


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PDF AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV040 AT27BV4096 AT27BV800 1024K 8/512K 8M-BIT CMOS SERIAL FLASH GENERAL AT8051 TQFP 100 PACKAGE AT27BV800 AT27BV512 AT27BV4096 AT27BV256 AT27BV1024 AT27BV040 80C31 MICROCONTROLLER development board ATMEL
1998 - KM29W16000ATS

Abstract: No abstract text available
Text: · Automatic Program and Erase - Page Program : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read Operation - Random Access : 10 µs(Max.) - Serial Page Access , market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out at 80ns cycle time per byte , columns. Spare eight columns are located from column address of 256 to 263. A 264-byte data register is


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PDF KM29W16000ATS KM29W16000ATS
1999 - Not Available

Abstract: No abstract text available
Text: Automatic Program and Erase - Page Program : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read Operation - Random Access : 10µ s(Max.) - Serial Page Access : 80ns(Min.) · , state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out , located from column address of 256 to 263. A 264-byte data register is connected to memory cell arrays


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PDF KM29W16000BTS
1999 - KM29W16000ATS

Abstract: 400F KM29W16000AIT KM29W16000AT
Text: + 8)bit x8bit · Automatic Program and Erase - Page Program : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial , mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out at 80ns , rows by 264 columns. Spare eight columns are located from column address of 256 to 263. A 264-byte


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PDF KM29W16000ATS KM29W16000ATS 400F KM29W16000AIT KM29W16000AT
1999 - 400F

Abstract: K9F1608W0A K9F1608W0A-TCS0 KM29W16000ATS
Text: · Automatic Program and Erase - Page Program : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access , market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out at 80ns cycle time per byte , rows by 264 columns. Spare eight columns are located from column address of 256 to 263. A 264-byte


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PDF K9F1608W0A-TCS0 KM29W16000ATS 400F K9F1608W0A K9F1608W0A-TCS0
2004 - toshiba nand tc58

Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash TOSHIBA TC58 cmos memory -NAND Toshiba NAND samsung tc58 NAND256-A TOSHIBA part numbering VFBGA63
Text: Byte / 264 Word Page) NAND Flash memory, to replace an equivalent Toshiba memory, in a application , , NAND256-A, NAND512-A, NAND01G-A, 528 Byte / 264 Word Page datasheet. INTRODUCTION The ST NAND Flash 528 Byte / 264 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The , . They are fully compatible with the Toshiba 528 Byte /264 Word Page family of NAND Flash memories and can be used to replace them in any application. Table 1. and Table 2., list the NAND 528 Byte /264


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PDF AN1839 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits toshiba nand tc58 toshiba Nand flash toshiba Nand part numbering tc58 flash TOSHIBA TC58 cmos memory -NAND Toshiba NAND samsung tc58 NAND256-A TOSHIBA part numbering VFBGA63
1998 - KM29V16000

Abstract: KM29N16000ATS
Text: : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read Operation - , cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out at 80ns cycle time per byte . The I/O pins serve as the ports for , columns. Spare eight columns are located from column address of 256 to 263. A 264-byte data register is


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PDF KM29N16000ATS KM29V16000 KM29N16000ATS
1998 - KM29V16000ATS

Abstract: KM29V16000
Text: : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read Operation - , cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out at 80ns cycle time per byte . The I/O pins serve as the ports for , located from column address of 256 to 263. A 264-byte data register is connected to memory cell arrays


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PDF KM29V16000ATS KM29V16000ATS KM29V16000
2012 - Not Available

Abstract: No abstract text available
Text: ) into either buffer 1 or buffer 2. To load data into the DataFlash standard buffer ( 264-bytes ), a 1- byte , through buffer for the DataFlash standard page size ( 264-bytes ), a 1- byte opcode, 82H for buffer 1 or 85H , Lockdown for Secure Code and Data Storage – Individual Sector Security: 128- byte Security Register – 64- byte User Programmable Space – Unique 64- byte Device Identifier JEDEC Standard Manufacturer , continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained


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PDF 66MHz 256-Bytes 264-Bytes 256-Bytes 256-/264-Bytes/Page) 256-Bytes) 64-Kbytes) 264-Bytes)
1999 - Not Available

Abstract: No abstract text available
Text: Page Program : (256 + 8) Byte - Block Erase : (4K + 128) Byte - Status Register · 264-Byte Page Read , . A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K- byte block. Data in the page can be read out at 80ns cycle time per byte , to 263. A 264-byte data register is connected to memory cell arrays accommodating data transfer , (256 + 8) Byte x 8192 A 0 - A7 Page Register & S/A Y-Gating Command Command Register I/O Buffers &


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PDF K9F1608W0B-TCS0 KM29W16000BTS
2013 - Not Available

Abstract: No abstract text available
Text: ) into either buffer 1 or buffer 2. To load data into the DataFlash standard buffer ( 264-bytes ), a 1- byte , through buffer for the DataFlash standard page size ( 264-bytes ), a 1- byte opcode, 82H for buffer 1 or 85H , Lockdown for Secure Code and Data Storage – Individual Sector Security: 128- byte Security Register – 64- byte User Programmable Space – Unique 64- byte Device Identifier JEDEC Standard Manufacturer , Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte


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PDF 66MHz 256-Bytes 264-Bytes 256-Bytes 256-/264-Bytes/Page) 256-Bytes) 64-Kbytes) 264-Bytes)
1998 - rfid cards with AT89c2051 ic

Abstract: sram 5volt 4m AT29C020 AT45DB041 AT27BV256 AT27BV040 AT27BV4096 MCU00100 AT27BV800 flash 32 Pin PLCC 16mbit
Text: 1M-bit 2.7-Volt Only Serial Interface Flash with One 264-Byte SRAM Buffer 3Q98 AT45DB021 5 MHz 2M-bit 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now AT45DB041 5 MHz 4M-bit 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now AT45DB081 10 MHz 8M-bit 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers Now , with One 264-Byte SRAM Buffer 3Q98 AT45D021 10 MHz 2M-bit 5.0-Volt Only Serial-Interface


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PDF AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV040 AT27BV4096 AT27BV400 AT93C56 AT93C57 rfid cards with AT89c2051 ic sram 5volt 4m AT29C020 AT45DB041 AT27BV256 AT27BV040 AT27BV4096 MCU00100 AT27BV800 flash 32 Pin PLCC 16mbit
2014 - Not Available

Abstract: No abstract text available
Text: ) into either buffer 1 or buffer 2. To load data into the standard DataFlash buffer ( 264-bytes ), a 1- byte , program through buffer for the DataFlash standard page size ( 264-bytes ), a 1- byte opcode, 82H for buffer , Lockdown for Secure Code and Data Storage – Individual Sector Security: 128- byte Security Register – 64- byte User Programmable Space – Unique 64- byte Device Identifier JEDEC Standard Manufacturer , reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is


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PDF 66MHz 256-Bytes 264-Bytes 256-Bytes 256/264-Bytes/Page) 256-Bytes) 64-Kbytes) 256-/264-Bytes)
2008 - AT45DB041D-SU

Abstract: AT45DB041D-SU 852 VDFN PA10 AT45DB041D JEP106 AT45DB041D-SSU-SL955 atmel 0810 AT45DB041D-SSU
Text: Security: 128- byte Security Register ­ 64- byte User Programmable Space ­ Unique 64- byte Device Identifier , , as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily , required to designate a byte address within a buffer. Main memory addressing is referenced using the , page address and BA8 - BA0 denotes the 9 address bits required to designate a byte address within the , a byte address within a buffer. Main memory addressing is referenced using the terminology A18 - A0


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PDF 3595L AT45DB041D-SU AT45DB041D-SU 852 VDFN PA10 AT45DB041D JEP106 AT45DB041D-SSU-SL955 atmel 0810 AT45DB041D-SSU
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