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256MB32MX64,PC133 Chip One Exchange 13 - -
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256MB datasheet (1)

Part Manufacturer Description Type PDF
256MBDDRSDRAM Samsung Electronics DDR SDRAM Specification Version 0.3 Original PDF

256MB Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - MICRON mcp

Abstract: PC28F256P PC28F256P30B P30-65nm PF48F4400P0VBQEF PC28F256P30BFF Micron 512MB NOR FLASH PF48F micron 100 ball BGA pf48f4400p0vbqe
Text: Parameter Die 256Mb VSS DQ[15:0] A[MAX:1] WAIT PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb .pdf - , 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30 , VCCQ (I/O) voltage: 1.7V to 3.6V ­ Standy current: 65µA (TYP) for 256Mb ­ 52 MHz continuous synchronous , ) command set compatible ­ Common flash interface · Density and Packaging ­ 56-lead TSOP package ( 256Mb only) ­ 64-ball Easy BGA package ( 256Mb , 512Mb) ­ QUAD+ and SCSP packages ( 256Mb , 512Mb) ­ 16-bit wide


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PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, MICRON mcp PC28F256P PC28F256P30B PF48F4400P0VBQEF PC28F256P30BFF Micron 512MB NOR FLASH PF48F micron 100 ball BGA pf48f4400p0vbqe
2013 - js28f256p

Abstract: RC48F4400P0TB0EJ
Text: 256Mb and 512Mb ( 256Mb / 256Mb ), P33-65nm Features Micron Parallel NOR Flash Embedded Memory , Packaging – 56-lead TSOP package ( 256Mb only) – 64-ball Easy BGA package ( 256Mb , 512Mb) – QUAD+ and SCSP packages ( 256Mb , 512Mb) – 16-bit wide data bus • Quality and reliabilty – JESD47 , current: 65µA (TYP) for 256Mb – 52 MHz continuous synchronous read current: 21mA (TYP), 24mA (MAX) PDF: 09005aef845667ad p33_65nm_MLC_ 256Mb-512mb .pdf - Rev. B 12/13 EN 1 Micron Technology, Inc


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PDF 256Mb 512Mb 256Mb/256Mb) P33-65nm P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, js28f256p RC48F4400P0TB0EJ
2010 - PF38F4060M0Y3DF

Abstract: PF38F3040 PF38F5060M0Y0CF PF48F6000M0Y1BH m36w0r6050u M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
Text: 256Mb M PSRAM Uniform 1.8 1.8 Muxed x16 x16 LPCP - 56ball 11x8 mm 1Gb + 256SDR PF38F6070M0Y0BF 1Gb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 , PF38F5070M0Y0BE 512Mb 256Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D- 105ball 9x11 mm 512MB + 256DDR MUX PF38F5070M0Y1EE 512Mb 256Mb M DDR Uniform 1.8 1.8 , 256Mb M DDR Uniform 1.8 1.8 Muxed x16 x16 X16SB - 165ball 9x11 mm 512Mb


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PDF 1024Mb PF58F0062M0Y1BF 105ball PF58F0033M0Y0BF x1x16 80Ball M36A0W5040B/ M36A0W5030B/ PF38F4060M0Y3DF PF38F3040 PF38F5060M0Y0CF PF48F6000M0Y1BH m36w0r6050u M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
2013 - RC48F4400P0VB0E

Abstract: PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE
Text: 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30 , VCCQ (I/O) voltage: 1.7V to 3.6V ­ Standy current: 65µA (TYP) for 256Mb ­ 52 MHz continuous synchronous , ) command set compatible ­ Common flash interface · Density and Packaging ­ 56-lead TSOP package ( 256Mb only) ­ 64-ball Easy BGA package ( 256Mb , 512Mb) ­ QUAD+ and SCSP packages ( 256Mb , 512Mb) ­ 16-bit wide , without notice. © 2013 Micron Technology, Inc. All rights reserved. 256Mb and 512Mb ( 256Mb / 256Mb ), P30


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PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, RC48F4400P0VB0E PC28F256P30BFF MICRON mcp pf48f4400p0vbqe rc28F256P30TFE
2013 - Not Available

Abstract: No abstract text available
Text: /T PF48F4400P0VBQEF 512Mb ( 256Mb / 256Mb ) PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb , 16 KWord Block 0 512Mb ( 256Mb / 256Mb ), World Wide x16 Mode PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb , 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory , and Packaging – 56-lead TSOP package ( 256Mb only) – 64-ball Easy BGA package ( 256Mb , 512Mb) – QUAD+ and SCSP packages ( 256Mb , 512Mb) – 16-bit wide data bus • Quality and reliabilty â


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PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex,
2013 - PC48F4400P0VB0EE

Abstract: No abstract text available
Text: PF48F4400P0VBQEF 512Mb ( 256Mb / 256Mb ) PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb .pdf - Rev. C 12/13 EN , 16 KWord Block 0 512Mb ( 256Mb / 256Mb ), World Wide x16 Mode PDF: 09005aef84566799 p30_65nm_MLC_ 256Mb-512mb , 256Mb and 512Mb ( 256Mb / 256Mb ), P30-65nm Features Micron Parallel NOR Flash Embedded Memory , and Packaging – 56-lead TSOP package ( 256Mb only) – 64-ball Easy BGA package ( 256Mb , 512Mb) – QUAD+ and SCSP packages ( 256Mb , 512Mb) – 16-bit wide data bus • Quality and reliabilty â


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PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0EE
sandisk micro SD Card 2GB

Abstract: sandisk micro sd SanDisk SDHC kingston sd 2GB kingston micro sd sd card 4gb sandisk sandisk 4Gb micro sd sandisk SD Card 2GB data sheet kingston micro SD card sd card kingston 4gb
Text: 128-01-010 MEDIAFO SD Personal Storage Disc 128 128 SD 256MB list 256-01-001 SILICON , Ultra+ My Flash 60X 128 128 Mini SD 256MB list 256-01-001 SAMSUNG Mini SD PLEOMAX , Micro SD 256 128 My flash super 128 128 Micro SD 256MB list 256-01-003 A-DATA , 256MB list 256-01-001 SAMSUNG MMC PLEOMAX 256 256-01-002 PalmOne MMC Memory , RS_MMC 256MB list RS MMC PLEOMAX 256 RS_MMC 512MB list 512-01-001 Kingston RS MMC 512


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PDF SDC-16M SDC-32M 128MB S02G-72-021 S032-81-021 S064-81-021 S128-81-021 128MB S256-81-021 256MB sandisk micro SD Card 2GB sandisk micro sd SanDisk SDHC kingston sd 2GB kingston micro sd sd card 4gb sandisk sandisk 4Gb micro sd sandisk SD Card 2GB data sheet kingston micro SD card sd card kingston 4gb
K4S641632k uc60

Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S280832I-UC75 K4S561632J K4S281632K K4S641632N
Text: Refresh 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb , 8K/64ms 51 : 512Mb, 8K , 16 K4S561632H 256Mb J-die LC50/C60/C75 LL50/L60/L75 K4S560432H 4Banks 4K/64ms LVTTL K4S281632K 256Mb H-die Avail. 8M x 8 K4S280432K 4Banks Package 4M x 16 , compatibility with PC100. - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR , (II)*4 Now 256Mb H-die 4Banks K4S561632H UI60/I75 UP60/P75 16M x 16 LVTTL 8K


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PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S280832I-UC75 K4S561632J K4S281632K K4S641632N
1999 - Not Available

Abstract: No abstract text available
Text: 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 1 tRCD (ns , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 2 Micron Technology, Inc. reserves the right to change , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 01/14 EN 5 78 80 82 83 84 85 86


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1
512m pc133 SDRAM DIMM

Abstract: 1gb pc133 SDRAM DIMM PC133 SDRAM registered DIMM 512MB samsung 256Mb sdram dimm layout sdram pcb layout M390S3253BTU-C75 M390S6450BTU-C75 64Mb samsung SDRAM pc133 SDRAM DIMM package
Text: , 256MB , 512MB and 1GB. · The Best Solution for Slim / 1U Server System - Low Profile Registered DIMM , 1U RDIMM - Density: 128Mbyte & 256Mbyte - Status . The initial evaluation result shows no , . · x4 base 1U RDIMM - Density: 256Mbyte , 512Mbyte, 1Gbyte - Status . Under Evaluation . External , ( Composition ) # of Row (16Mb x8 * 9ea) 128Mb TSOP 1 (32Mb x4 * 18ea) 256MB (32Mx72) 1,200 mil 0.150 inch (3.810mm) 256Mb TSOP 1 (32Mb x8 * 9ea) 512MB (64Mx72) 1GB (128Mx72


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PDF MPP-Feb-2001 1200mil, PC133/PC100 1700mil/1500mil. 168pin 128MB, 256MB, 512MB 512m pc133 SDRAM DIMM 1gb pc133 SDRAM DIMM PC133 SDRAM registered DIMM 512MB samsung 256Mb sdram dimm layout sdram pcb layout M390S3253BTU-C75 M390S6450BTU-C75 64Mb samsung SDRAM pc133 SDRAM DIMM package
2012 - PC133 registered reference design

Abstract: PPAP level submission requirement table 09005aef8091e6d1
Text: 0.8ns 0.8ns 0.8ns PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 1 Products , /decoder. PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 2 Micron Technology , . 88 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 3 Micron Technology , . 78 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 4 Micron Technology , . 79 81 83 84 85 86 87 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. A 04/12 EN 5


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 256Mb 09005aef8091e6d1) PC133 registered reference design PPAP level submission requirement table 09005aef8091e6d1
2011 - TN-48-05

Abstract: MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 MT48LC64M4A2TG PC133 registered reference design 63 ball Vfbga thermal resistance
Text: . 0.8ns 0.8ns PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN Setup CL = 2 CL = 3 Time , available at www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 2 Micron , . 86 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 3 Micron Technology, Inc , . 49 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. O 7/11 EN 5 Micron Technology, Inc


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 54-pin 60-ball 54-ball TN-48-05 MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 MT48LC64M4A2TG PC133 registered reference design 63 ball Vfbga thermal resistance
1999 - Not Available

Abstract: No abstract text available
Text: 20 -7E 133 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN , 256Mb_sdr.pdf - Rev. V 07/14 EN 2 Micron Technology, Inc. reserves the right to change products or , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 07/14 EN 5 78 80 82 83 84 85 86


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1
2002 - Not Available

Abstract: No abstract text available
Text: ADVANCE 256Mb : x16 MOBILE SDRAM MOBILE SDRAM MT48V16M16LFFG, MT48H16M16LFFG­ 4 Meg x 16 , : 1. See page 58 for FBGA Device Marking Table. KEY TIMING PARAMETERS 256Mb SDRAM PART NUMBERS , (READ) latency 256Mb : x16 Mobile SDRAM MobileRamY26L_A.p65 ­ Pub. 5/02 1 Micron Technology , MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS. ADVANCE 256Mb : x16 MOBILE SDRAM 256Mb SDRAM , 54-BALL FBGA GENERAL DESCRIPTION The 256Mb SDRAM uses an internal pipelined architecture to


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PDF 256Mb: MT48V16M16LFFG, MT48H16M16LFFG­ 192-cycle 54-ball, MobileRamY26L
2008 - ELPIDA mobile dram LPDDR2

Abstract: LPDDR2 SDRAM micron infineon power cycling
Text: : 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 1 Products and specifications discussed , marking decoder is available at www.micron.com/decoder. PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 3 Micron , . 94 94 94 94 95 95 95 95 95 95 96 96 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev , ) . 90 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 5 Micron


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PDF 256Mb: MT46H16M16LF MT46H8M32LF 09005aef834bf85b ELPIDA mobile dram LPDDR2 LPDDR2 SDRAM micron infineon power cycling
1999 - Not Available

Abstract: No abstract text available
Text: 2-2-2 15 15 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 1 tRCD (ns , : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 2 Micron Technology, Inc. reserves the right to change , . 84 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 4 Micron Technology, Inc , . PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. V 08/14 EN 5 78 80 82 83 84 85 86


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1
2001 - PC133 registered reference design

Abstract: No abstract text available
Text: 256Mb : x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC66-, PC100-, and PC133-compliant · , (READ) latency MT48LC16M16A2TG-75 256Mb : x4, x8, x16 SDRAM 256MSDRAM_D.p65 ­ Rev. D; Pub. 6/01 , MICRON WITHOUT NOTICE. 256Mb : x4, x8, x16 SDRAM FBGA PIN ASSIGNMENT (Top View) 64 Meg x 4 SDRAM 8mm , are identicle to the listing of the 54-pin TSOP table on page 8. 256Mb : x4, x8, x16 SDRAM 256MSDRAM , specifications without notice. ©2001, Micron Technology, Inc. 256Mb : x4, x8, x16 SDRAM 256 Mb SDRAM PART


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PDF 256Mb: PC66-, PC100-, PC133-compliant 192-cycle MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 MT48LC64M4A2FB-75 MT48LC64M4A2FB-7E PC133 registered reference design
2008 - Elpida LPDDR2 Memory

Abstract: elpida lpddr2 lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 lpddr2 datasheet Datasheet LPDDR2 SDRAM infineon power cycling sac105
Text: ] Column addressing 1 4K Row addressing PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 2 Micron Technology , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 3 Micron , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 4 94 94 94 94 , ) . 90 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN 5 Micron


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PDF 256Mb: MT46H16M16LF MT46H8M32LF 60-ball 90-ball 09005aef834bf85b Elpida LPDDR2 Memory elpida lpddr2 lpddr2 samsung* lpddr2 micron lpddr2 samsung lpddr2 lpddr2 datasheet Datasheet LPDDR2 SDRAM infineon power cycling sac105
2012 - Not Available

Abstract: No abstract text available
Text: PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 1 Micron Technology, Inc , : www.micron.com/decoder. PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 2 Micron , . 87 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 3 Micron Technology , . 77 PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 4 Micron Technology , . PDF: 09005aef848d99e8 256Mb_ait_aat_sdr_esg.pdf - Rev. C 1/14 EN 5 78 80 82 83 84


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef848d99e8
1999 - 09005aef8091e6d1

Abstract: PC133 registered reference design
Text: 20 15 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 1 Products and specifications , -ball FBGA 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q , . 85 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 4 Micron Technology, Inc , . 79 81 83 84 85 86 87 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. Q 2/12 EN 5 Micron


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1 PC133 registered reference design
2010 - W3J2256M72-XPBX

Abstract: W3J128M64G-XPBX W3J128M72G-XPBX DDR1 512M 256mb EEPROM Memory ddr3 sdram chip 128mb w3j128m72 W3H128M72 BGA NAND Flash W72M64VB-XBX
Text: Size 256MB 256MB 512MB 512MB 1GB 1GB Organization 32M x 64 32M x 72 64M x 64 64M x 72 , x 72 W3H128M72ER-XNBX DDR SDRAM MCPs Size 128MB 128MB 128MB 128MB 256MB 256MB 256MB 256MB 256MB 512MB Organization 64M x 16 64M x 16 16M x 64 16M x 72 32M x 64 32M x 64 32M x , Registered DDR SDRAM MCPs Size 128MB 256MB Organization 16M x 72 32M x 72 SSRAM MCPs Size 2MB , Size Organization Conventional 16MB 2M x 64 Page Mode 32MB 64MB 256MB 512MB 8M x 32 8M x


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PDF W3J128M64G-XPBX W3J128M72G-XPBX W3J256M72G-XPBX* W3J2256M72-XPBX* W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX W3J2256M72-XPBX W3J128M64G-XPBX W3J128M72G-XPBX DDR1 512M 256mb EEPROM Memory ddr3 sdram chip 128mb w3j128m72 W3H128M72 BGA NAND Flash W72M64VB-XBX
2008 - elpida lpddr2

Abstract: samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 ELPIDA lpddr elpida memory lpddr2 micron LPDDR2 X32 sac105 MT46H8M32LF
Text: ] Column addressing 1 4K Row addressing PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 2 Micron Technology , . 94 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 3 Micron , . PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 4 94 94 94 94 , . 50 PDF: 09005aef834bf85b 256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN 5 Micron


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PDF 256Mb: MT46H16M16LF MT46H8M32LF 60-ball 90-ball 09005aef834bf85b elpida lpddr2 samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 ELPIDA lpddr elpida memory lpddr2 micron LPDDR2 X32 sac105 MT46H8M32LF
1999 - 09005aef8091e6d1

Abstract: 63 ball Vfbga thermal resistance PC133 registered reference design 54 ball vfbga
Text: : 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 1 Products and specifications discussed herein are subject , : www.micron.com/decoder. PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 2 Micron Technology, Inc , . 86 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 3 Micron Technology, Inc , . 79 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 4 Micron Technology, Inc , . 80 82 84 85 86 87 88 PDF: 09005aef8091e6d1 256Mb_sdr.pdf - Rev. P 12/11 EN 5 Micron


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PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1 63 ball Vfbga thermal resistance PC133 registered reference design 54 ball vfbga
2003 - 75Z1

Abstract: B908
Text: : 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N, Core DDR: Rev. B 9/08 EN 1 Micron Technology , . PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N, Core DDR , : www.micron.com. PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. N , .92 PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDRTOC.fm - 256Mb DDR: Rev. N, Core DDR , PDF: 09005aef80768abb/Source: 09005aef80768abb 256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. N, Core DDR


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PDF 256Mb: MT46V64M4 MT46V32M8 MT46V16M16 DDR400) 09005aef80768abb/Source: 09005aef80768abb x4x8x16 256Mb 75Z1 B908
THNCF1G02DG

Abstract: thncf128mdgi SD-M512 SD-M256 NAND Flash part number toshiba THNCF512MMG sandisk nand usb temperature control of 8096 all phones memory cards toshiba SD card 4GB
Text: , 256MB , 512MB, 1GB 2Mbytes/s 7Mbytes/s New and fast growing card form factor designed primarily for consumer products SD High Speed 24mm x 32mm x 2.1mm 128MB, 256MB , 512MB 10Mbytes/s 10Mbytes/s New High , 20mm x 21.5mm x 1.4mm 32MB, 64MB, 128MB, 256MB 2Mbytes/s 4Mbytes/s The miniSD TM Memory card compact , 36.4mm x 3.3mm 32MB, 64MB, 128MB, 256MB , 512MB, 1GB, 2GB, 4GB 1,5Mbytes/s 6Mbytes/s Ideal for embedded and industrial designs. Table 2. CompactFlash Performance DENSITY PART NUMBER 128MB 256MB 512MB


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