The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
X9250TZ24I-2.7T2 Intersil Corporation QUAD 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PBGA24, XBGA-24
X9455US24I-2.7 Intersil Corporation DUAL 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 256 POSITIONS, PDSO24, SOIC-24
X9455YS24I-2.7 Intersil Corporation DUAL 2.8K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 256 POSITIONS, PDSO24, SOIC-24
X9279UP18I Intersil Corporation 50K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDIP18, PLASTIC, DIP-18
X9455WP24I Intersil Corporation DUAL 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 256 POSITIONS, PDIP24, PLASTIC, DIP-24
X9455WS24I-2.7 Intersil Corporation DUAL 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 256 POSITIONS, PDSO24, SOIC-24

256-MBIT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - PF38F5060M0Y0C0

Abstract: strataflash 512mbit Migration Guide for Intel StrataFlash Memory J PF38F4060 PF38F5050M0Y0C0 3093* intel x16C PF38F4050M0Y0C0 SCSP M18
Text: wait-state synchronous burst reads: 7 ns clock-to-data output - 256-Mbit device: 133 MHz with zero waitstate , Blocks - 1-Gbit device: Eight 128- Mbit partitions - 512- Mbit device: Eight 64- Mbit partitions - 256-Mbit , Timings: Non Mux Device, Sync Read, 256-Mbit , 133 MHz . 53 7.2.4 Timings: AD-Mux , Read, 256-Mbit , 133 MHz . 57 7.3 Write Specifications , Timings: Non Mux Device, Sync Write, 256-Mbit , 133 MHz . 62 7.3.4 Timings


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PDF 512-Mbit, 256-Mbit 16-bit ECR14 309823-005US PF38F5060M0Y0C0 strataflash 512mbit Migration Guide for Intel StrataFlash Memory J PF38F4060 PF38F5050M0Y0C0 3093* intel x16C PF38F4050M0Y0C0 SCSP M18
2005 - TE28F640J3C-120

Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 TE28F640J3C120 SL897 28F128j3c 28F320J3C sl896
Text: Intel StrataFlash® Memory (J3) 256-Mbit J3 Family Specification Update June 2005 The 28F256J3 , specifications and product descriptions at any time, without notice. The Intel StrataFlash® Memory (J3) 256-Mbit , 256-Mbit J3 Family Contents Revision History , 06 Jun 2005 3 256-Mbit J3 Family Revision History Date Version 07/07/99 -001 , Specification Update 256-Mbit J3 Family Date Version 10/29/01 -013 Added Specification


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PDF 256-Mbit 28F256J3, 28F128J3, 28F640J3, 28F320J3 TE28F640J3C-120 28F64J3 28f256j3c SL894 RC28F128J3C-150 TE28F640J3C120 SL897 28F128j3c 28F320J3C sl896
2007 - numonyx 106 ball

Abstract: strataflash 512mbit 512-Gbit 512mbit numonyx 107-ball Numonyx StrataFlash M18 strataflash 512 p33
Text: ) Datasheet Product Features Device Architecture - Flash die density: 128-, 256-Mbit - Top , . The 512- Mbit LX family x32 device interface is created by combining a pair of 128- or 256-Mbit x16 , capabilities with total density upgrades from 256-Mbit through 512- Mbit . This stacked flash family provides , partitions for a 128- Mbit flash die, and 16- Mbit partitions for a 256-Mbit flash die. By sub-dividing the , F-WP1# WAIT 128- or 256-Mbit L18/L30 Flash #2 D[31:16] F-VPP F-RST# F-VCC VCCQ VSS/VSSQ A[25:2


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PDF L18/L30 512-Mbit 256-Mbit 32-bit 16-Mbit x32SH x16SB x16/x32 numonyx 106 ball strataflash 512mbit 512-Gbit 512mbit numonyx 107-ball Numonyx StrataFlash M18 strataflash 512 p33
Am29LV* 64 boot

Abstract: Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 Product Selector Guide AM29F010 pl 032 FGA04 AM29DL323C AMD AM29F016B
Text: Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C , Page Mode 3.0 Volt-only Mass Storage 64 Mbit 128 Mbit 256 Mbit 16 Mbit Am29BL162C Am30LV0064D* 16 Mbit Am29PL160C 3.0 Volt-only Sector Erase 1 Mbit 2 Mbit 4 Mbit 8 Mbit Am29LV001B Am29LV002B Am29LV040B Am29LV010B Am29LV200B Am29LV004B Am29LV400B 16 Mbit 32 Mbit Am29LV800B Am29LV081B Am29LV008B Am29LV160B Am29LV017B Am29LV116B 64 Mbit Am29LV033C Am29LV640C


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PDF Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C Am29BL162C Am30LV0064D Am29LV* 64 boot Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 Product Selector Guide AM29F010 pl 032 FGA04 AMD AM29F016B
2003 - PF48F4400L0

Abstract: RD38F3040L0YBQ0 rd38f405 strataflash reliability RD48F4400L0 PF48F4000L0YBQ0 Intel SCSP intel MLC flash LV30 1024-Mbit
Text: Segment F1-CE# F-WE# F[2:1]-OE# F-RST# F3-CE# Data Segment Flash Die # 1 (128- or 256-Mbit ) Flash Die # 2 (128- or 256-Mbit ) F2-CE# F-VCC F-VPP Optional Flash Die # 3 (128- or 256-Mbit ) Optional Flash Die # 3 (128- or 256-Mbit ) F3-CE# VSS F-WP# VCCQ CLK ADV# WAIT A[MAX:MIN , addresses during read and write operations. A[MAX:MIN] Input · · · · · 256-Mbit Die : AMAX , Intel StrataFlash£ Wireless Memory System (LV18/LV30 SCSP) 768- Mbit LVQ Family with Asynchronous


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PDF LV18/LV30 768-Mbit 256Mbit 64-Mbit 16-KWord 128-Mbit 256-Mbit RD48F3000L0YTQ0 NZ48F4000L0YTQ0 RD48F3000L0YBQ0 PF48F4400L0 RD38F3040L0YBQ0 rd38f405 strataflash reliability RD48F4400L0 PF48F4000L0YBQ0 Intel SCSP intel MLC flash LV30 1024-Mbit
2004 - 253852

Abstract: No abstract text available
Text: : 64-, 128-, 256-Mbit - PSRAM density: 32-, 64-, 128- Mbit - SRAM density: 8- Mbit Device Voltage - , F1-CE# F1-OE# F1-VCC Flash Die #1 (128- or 256-Mbit ) Flash Die (128- or 256-Mbit ) #2 F2-CE# F2-OE# F-WE , - or 256-Mbit ) #3 F2-VCC F-VPP xRAM Segment R-UB# R-LB# S-VCC S-CS1# S-CS2 Note: Table 1 , , made up of either a 128- Mbit flash die or a 256-Mbit flash die, each containing one parameter partition , dies with densities of 128- Mbit or 256-Mbit. The single partition is made up of four 16-Kword parameter


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PDF LV18/LV30 768-Mbit 256-Mbit 128-Mbit 100-K LV18/LV30) 8x11x1 RD38F4420LVYTQ0 RD38F4420LVYBQ0 253852
PEF20451

Abstract: 20471
Text: . . . 7 Non-blocking 4K Switch with 16.384 Mbit /s Data-rate on PCM IN/OUT . 7 Non-blocking 4K Switch with 8.192 Mbit /s Data-rate on PCM IN/OUT . . 8 Non-blocking 4K Switch with 4 Mbit /s Data-rate on PCM IN/OUT . . . . . . 9 Non-blocking 4K Switch with 2.048 Mbit /s Data-rate on PCM IN/OUT . 10 8K , Non-blocking 8K Switch with 16.384 Mbit /s Data-rate on PCM IN/OUT 11 Non-blocking 8K Switch with 8.192 Mbit /s Data-rate on PCM IN/OUT . 12 Non-blocking 8K Switch with 4.096 Mbit /s Data-rate on PCM IN/OUT . 13


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PDF 20450/2047ation PEF20451 20471
2005 - 28F256J3

Abstract: RC28F256J3C-125 AP-732 RC28F128J3C-150 Micron MLC 28F160S3 PC28F640J3 Intel J3 memory 28-Mbit 28F640J3
Text: Intel StrataFlash® Memory (J3) 256-Mbit (x8/x16) Datasheet Product Features , Page Read description. Revised Write-to-Buffer flow chart. Updated timing waveforms. Added 256-Mbit , information. Datasheet 256-Mbit J3 (x8/x16) 1.0 Introduction This document describes the Intel , :0]). 7 256-Mbit J3 (x8/x16) 2.0 Functional Overview The Intel StrataFlash® memory family contains high-density memories organized as 32 Mbytes or 16Mwords ( 256-Mbit , available on the


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PDF 256-Mbit x8/x16) 256Mbit 32-Byte 128-bit --64-bit 56-Lead 64-Ball 48-Ball 28F256J3 RC28F256J3C-125 AP-732 RC28F128J3C-150 Micron MLC 28F160S3 PC28F640J3 Intel J3 memory 28-Mbit 28F640J3
2001 - Not Available

Abstract: No abstract text available
Text: HYB/E 25L256160AC 256-MBit Mobile-RAM 256-MBit Synchronous Low-Power DRAM in Chipsize Packages , HYB/E 25L256160AC 256-MBit Mobile-RAM Ordering Information Type Function Code Package , BA0, BA1 Bank Select INFINEON Technologies 2 09.2/01 HYB/E 25L256160AC 256-MBit , /01 HYB/E 25L256160AC 256-MBit Mobile-RAM Functional Block Diagrams A0 - A8, AP, BA0, BA1 , HYB/E 25L256160AC 256-MBit Mobile-RAM Signal Pin Description Pin Type Signal Polarity


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PDF 25L256160AC 256-MBit 105Mhz 16Mbit
2001 - Not Available

Abstract: No abstract text available
Text: HYB 39L256160AC 256-MBit 3.3V Mobile-RAM 256-MBit Synchronous Low-Power DRAM in Chipsize , . INFINEON Technologies 1 09/01 HYB 39L256160AC 256-MBit 3.3V Mobile-RAM Ordering Information , 39L256160AC 256-MBit 3.3V Mobile-RAM Pin Configuration for x16 devices: 1 2 3 7 8 9 , Technologies 3 09/01 HYB 39L256160AC 256-MBit 3.3V Mobile-RAM Functional Block Diagrams A0 - A8 , Technologies 4 09/01 HYB 39L256160AC 256-MBit 3.3V Mobile-RAM Signal Pin Description Pin Type


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PDF 39L256160AC 256-MBit 105Mhz 54-FBGA 16Mbit
2002 - cbx smd code

Abstract: No abstract text available
Text: HYB 39L256160AC/T 256-MBit 3.3V Mobile-RAM 256-MBit Synchronous Low-Power DRAM Datasheet (Rev , Technologies 1 12/01 HYB 39L256160AC/T 256-MBit 3.3V Mobile-RAM Ordering Information Type HYB , 2 12/01 HYB 39L256160AC/T 256-MBit 3.3V Mobile-RAM Pin Configuration for BGA devices: 1 , Technologies 3 12/01 HYB 39L256160AC/T 256-MBit 3.3V Mobile-RAM Pin Configuration for TSOP devices , HYB 39L256160AC/T 256-MBit 3.3V Mobile-RAM Functional Block Diagrams Column Addresses A0 - A8


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PDF 39L256160AC/T 256-MBit 16Mbit SPT03933 cbx smd code
2004 - RD38F4

Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
Text: -, 256-Mbit - LPSDRAM die density: 128-, 256-Mbit - Top or Bottom parameter flash configuration Device , # F-WP1# F-CLK ADV# F-WP2# WAIT OE# F3-CE# WE# DQ[15:0] A[MAX:MIN] Flash Die #3 (128- or 256-Mbit ) Flash Die #4 (128- or 256-Mbit ) Flash Die #1 (128- or 256-Mbit ) Flash Die #2 (128- or 256-Mbit ) F2-CE# F-RST# F-VCC F-VPP F4-CE# VCCQ VSS xRAM Segment LPSDRAM Die #1 (128/ 256-Mbit ) SRAM Die #1 (8- Mbit ) LPSDRAM Die #2 (128/ 256-Mbit ) R1-CS# R2-CS# D-BA[1:0] D-CAS# D-RAS# R-CLK D-CKE R-VCC D-DM1 / R-UB


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PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 128-Mbit 256-Mbit 128-Mbit 32-Mbit 64-Mbit RD38F4 rd58f0012lvybb0 30094* intel
2004 - Not Available

Abstract: No abstract text available
Text: €” Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash , (Code/Data) Segment F1-CE# F-WP1# F2-CE# Flash Die #1 (128- or 256-Mbit ) Flash Die #2 (128- or 256-Mbit ) F-CLK ADV# F-VCC F-WP2# WAIT OE# F3-CE# F-VPP Flash Die #3 (128- or 256-Mbit ) Flash Die #4 (128- or 256-Mbit ) DQ[15:0] D-DM1 / R-UB# D-DM0 / R-LB# S-CS1 , Die #1 (128/ 256-Mbit ) SRAM Die #1 (8- Mbit ) LPSDRAM Die #2 (128/ 256-Mbit ) R1-CS# R2-CS# D-BA


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PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit
2004 - strataflash 256 x 2 Mbits

Abstract: Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853
Text: - and 256-Mbit - LPSDRAM density: 128, 256 Mbit - Top/Bottom parameter flash configuration Device , # Flash Die #1 (128- or 256-Mbit ) Flash Die #2 (128- or 256-Mbit ) F-CLK ADV# F-VCC F-WP2# WAIT OE# F3-CE# F-VPP Flash Die #3 (128- or 256-Mbit ) Flash Die #4 (128- or 256-Mbit ) DQ , # A[MAX:MIN] F-RST# xRAM Segment LPSDRAM Die #1 (128/ 256-Mbit ) SRAM Die #1 (8- Mbit ) LPSDRAM Die #2 (128/ 256-Mbit ) R1-CS# R2-CS# D-BA[1:0] D-CAS# D-RAS# R-CLK D-CKE R-VCC 11 LVX


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PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit strataflash 256 x 2 Mbits Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853
2003 - RD38F3040L0YBQ0

Abstract: flash "high temperature data retention" mechanism rd38f405 PF48F4400L strataflash retention RD48F4400L 400000-40FFFF 28F256L30 28F256L18 LV30
Text: Flash Die # 1 (128- or 256-Mbit ) Flash Die # 2 (128- or 256-Mbit ) F2-CE# F-VCC F-VPP Optional Flash Die # 3 (128- or 256-Mbit ) Optional Flash Die # 3 (128- or 256-Mbit ) F3-CE# VSS , · · 256-Mbit Die : AMAX= A23 128- Mbit Die : AMAX = A22 64- Mbit Die : AMAX = A21 32- Mbit Die , Intel StrataFlash£ Wireless Memory System (LV18/LV30 SCSP) 768- Mbit LVQ Family with Asynchronous , segment: 128- and 256Mbit density; PSRAM: 32- and 64- Mbit density; SRAM: 8 Mbit density. - Top or


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PDF LV18/LV30 768-Mbit 256Mbit 64-Mbit 16-KWord 128-Mbit 256-Mbit RD48F3000L0YTQ0 NZ48F4000L0YTQ0 RD38F3040L0YBQ0 flash "high temperature data retention" mechanism rd38f405 PF48F4400L strataflash retention RD48F4400L 400000-40FFFF 28F256L30 28F256L18 LV30
1999 - SSO056

Abstract: TSR048 AM29F010 MBit Product Selector Guide
Text: Erase 8 Mbit Am29SL800C 16 Mbit Am29SL160C 4 Mbit Am29DL400B 8 Mbit Am29DL800B 16 Mbit Am29DL162C Am29DL163C 32 Mbit Am29DL322C Am29DL323C 3.0 Volt-only UltraNANDTM 3.0 Volt-only Burst Mode Page Mode 64 Mbit 128 Mbit 256 Mbit 8 Mbit 16 Mbit 16 Mbit Am29PL160C Am30LV0064D Am30LV0128D* Am29BL802C* Am29BL162C 3.0 Volt-only Sector Erase 1 Mbit 2 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit 64 Mbit Am29LV001B Am29LV002B Am29LV040B


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PDF Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C Am29PL160C Am30LV0064D SSO056 TSR048 AM29F010 MBit Product Selector Guide
2004 - RFUS 20

Abstract: 298161 strataflash 256 x 2 Mbits
Text: - and 256-Mbit - LPSDRAM density: 128, 256 Mbit - Top/Bottom parameter flash configuration Device , # Flash Die #1 (128- or 256-Mbit ) Flash Die #2 (128- or 256-Mbit ) F-CLK ADV# F-VCC F-WP2# WAIT OE# F3-CE# F-VPP Flash Die #3 (128- or 256-Mbit ) Flash Die #4 (128- or 256-Mbit ) DQ , # A[MAX:MIN] F-RST# xRAM Segment LPSDRAM Die #1 (128/ 256-Mbit ) SRAM Die #1 (8- Mbit ) LPSDRAM Die #2 (128/ 256-Mbit ) R1-CS# R2-CS# D-BA[1:0] D-CAS# D-RAS# R-CLK D-CKE R-VCC 11 LVX


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PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit RFUS 20 298161 strataflash 256 x 2 Mbits
2007 - 28f128j3d75

Abstract: 28f320j3d75 28F640J3D75 JS28F128J3D-75 28F128J3D-75 JS28F320J3D-75 28F128J3d 28F640J3D 28F320J3D-75 28f256j3d
Text: . 12 3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit . 12 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit , . 15 4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit . 15 4.2 56-Lead TSOP Package Pinout, 32-, 64-,128-, 256-Mbit. , -, 128-, 256-Mbit (monolithic)" on page 67. May 2007 003 Minor revisions August 2007 004


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PDF 128-Kbyte 256Mbit 32-Byte 56-Lead 64-Ball x8/x16 32-Mbit 28f128j3d75 28f320j3d75 28F640J3D75 JS28F128J3D-75 28F128J3D-75 JS28F320J3D-75 28F128J3d 28F640J3D 28F320J3D-75 28f256j3d
1998 - CAY smd marking code

Abstract: 39S256800T-8 smd CAY cbx smd code smd marking T22 PC100-323-620 PC66-222-820 PC100-222-620 P-TSOPII-54 SMD MARKING T5
Text: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information · High Performance , The HYB 39S256400/800/160T are four bank Synchronous DRAM's organized as 4 banks × 16 MBit × 4, 4 banks × 8 MBit × 8 and 4 banks × 4 MBit × 16 respectively. These synchronous devices achieve high speed , ' advanced 256 MBit DRAM process technology. The device is designed to comply with all JEDEC standards set , in TSOPII packages. Semiconductor Group 1 1998-10-01 HYB 39S256400/800/160T 256 MBit


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PDF 39S256400/800/160T cycles/64 P-TSOPII-54 400mil SPT03933 CAY smd marking code 39S256800T-8 smd CAY cbx smd code smd marking T22 PC100-323-620 PC66-222-820 PC100-222-620 SMD MARKING T5
2007 - 28f128j3d75

Abstract: 28f320j3d75 28F640J3D75 28F128J3D-75 28F640J3D 28F320J3D-75 JS28F640J3D75 database application 28f640j3d-75 28F128J3D7
Text: . 12 3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit . 12 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit , . 15 4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit . 15 4.2 56-Lead TSOP Package Pinout, 32-, 64-,128-, 256-Mbit. , on page 15. · Figure 28, "Decoder for Discrete Family, 32-, 64-, 128-, 256-Mbit (monolithic)" on page


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PDF 128-Kbyte 256Mbit 32-Byte 56-Lead 64-Ball 128-bit x8/x16 64-Mbit 28F640J3D-75 28f128j3d75 28f320j3d75 28F640J3D75 28F128J3D-75 28F640J3D 28F320J3D-75 JS28F640J3D75 database application 28F128J3D7
2007 - PF38F4050L0ZTQ0

Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Text: : 128-, 256-Mbit - Async PSRAM density: 16-, 32-, 64- Mbit - Async SRAM density: 8- Mbit - Top, Bottom , RD38F4055L0ZBQ0 and RD38F4055L0ZTQ0 to the 256-Mbit column of Table 20. Update valid-combination part numbers in , Address Range 7FC000-7FFFFF . 7F0000-7F3FFF 7E0000-7EFFFF . Partition Size ( Mbit ) 256-Mbit Flash Blk , Parameter) 128- Mbit or 256-Mbit Parameter Partition (Partition 0) 64 64 Main Partitions (Partition 1-7 , (Bottom Parameter) 128- Mbit or 256-Mbit 64 64 . 64 16 . 8 11 10 . 4 3 . 080000-08FFFF


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PDF L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
2007 - Not Available

Abstract: No abstract text available
Text: . 12 3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit . 12 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit , . 15 4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit . 15 4.2 56-Lead TSOP Package Pinout, 32-, 64-,128-, 256-Mbit. , 28, “Decoder for Discrete Family, 32-, 64-, 128-, 256-Mbit (monolithic)” on page 67. May 2007


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PDF 128-Kbyte 256Mbit 32-Byte 56-Lead 64-Ball x8/x16 32-Mbit
2003 - HYB25L256160AC

Abstract: DSA0016243
Text: Data Sheet, V1.1, April 2003 HYB25L256160AC 256-Mbit Mobile-RAM 2.5V V D D Memory Products , reasonable to assume that the health of the user or other persons may be endangered. HYB25L256160AC 256-Mbit , 3 V1.1, 2003-04-16 256-Mbit Mobile-RAM Mobile-RAM 1 Overview 1.1 HYB25L256160AC , ; see Table 10 for VDDQ dependent performance 1.2 Description The 256-Mbit Mobile-RAM is a new , . Operating the four memory banks in an Data Sheet 4 V1.1, 2003-04-16 HYB25L256160AC 256-Mbit


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PDF HYB25L256160AC 256-Mbit P-TFBGA-54 HYB25L256160AC DSA0016243
2007 - RC28f320j3d

Abstract: No abstract text available
Text: . 12 3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit . 12 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit , . 15 4.1 Easy BGA Ballout, 32-, 64-,128-, 256-Mbit . 15 4.2 56-Lead TSOP Package Pinout, 32-, 64-,128-, 256-Mbit. , Family, 32-, 64-, 128-, 256-Mbit (monolithic)” on page 67. May 2007 003 Minor revisions


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PDF 128-Kbyte 256Mbit 32-Byte 56-Lead 64-Ball x8/x16 RC28f320j3d
2007 - HYB39S256160FE

Abstract: HYB39S256160FE-7
Text: ) HYB39S 256407 F E 256-MBit Synchronous DRAM SDRAM Internet Data Sheet Rev. 1.3 Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM HY[B/I]39S256[40/80/16]0FT , Internet Data Sheet HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L) 256-MBit Synchronous DRAM 1 1.1 · · · · , 's advanced 0.11-µm 256-MBit DRAM process technology. The device is designed to comply with all industry , are supported. These devices operate with a single 3.3 V ± 0.3 V power supply. All 256-Mbit components


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PDF 39S256 HYB39S256 HYB39S 256-MBit HYB39S256160FE HYB39S256160FE-7
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