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transistor 2y0

Abstract: CDIP2-T16
Text: : SUBSTRATE POTENTIAL: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25^m (20.6 mils Â


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PDF ACS139MS MIL-PRF-38535 ACS139MS 25Micron 2390nm 2390nm 525nm ACS139MS. transistor 2y0 CDIP2-T16
acs08 Transistor

Abstract: b3 smd transistor y4 smd transistor smd transistor y3 smd transistor b3 smd transistor a4 y2 smd transistor a4 smd transistor smd transistor y2 smd transistor A1
Text: DIMENSIONS: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils ±1 mil) Bond Pad


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PDF ACS08MS MIL-PRF-38535 25Micron 100MeV/ ACS257MS 2390nm 2390nm 525nm acs08 Transistor b3 smd transistor y4 smd transistor smd transistor y3 smd transistor b3 smd transistor a4 y2 smd transistor a4 smd transistor smd transistor y2 smd transistor A1
Not Available

Abstract: No abstract text available
Text: ACS132MS Die Characteristics DIE DIMENSIONS: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±


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PDF ACS132MS ACS132MS 400mV 1-800-4-HARRIS
smd transistor 2y

Abstract: CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor
Text: , File Number 4429 ACS257MS Die Characteristics DIE DIMENSIONS: Size: 2390nm x 2390nm (94 mils x


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PDF MIL-PRF-38535 25Micron 100MeV/ IS09000 smd transistor 2y CDIP2-T16 CDIP2-T16 DIMENSIONS cdfp4-f16 3Y SMD 2h smd transistor
Not Available

Abstract: No abstract text available
Text: ACS151MS Die Characteristics DIE DIMENSIONS: Unbiased Insulator Size: 2390nm x 2390nm (94mils x


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PDF ACS151MS MIL-PRF-38535 ACS151MS 25Micron 2390nm 2390nm 94mils 94mils) 525nm
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: PASSIVATION Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm Â


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PDF ACS257MS MIL-PRF-38535 ACS257MS 25Micron 2390nm 2390nm 525nm ACS257M
Not Available

Abstract: No abstract text available
Text: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils ±1 mil) Bond Pad: 110


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PDF ACS157MS MIL-PRF-38535 ACS157MS 25Micron 2390nm 2390nm 525nm
Not Available

Abstract: No abstract text available
Text: : PASSIVATION Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils ±1 mil) Bond


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PDF ACS138MS MIL-PRF-38535 ACS138MS 25Micron 2390nm 2390nm 525nm ACS138M
Not Available

Abstract: No abstract text available
Text: , File Number 4460 ACTS138MS Die Characteristics DIE DIMENSIONS: PASSIVATION Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils ±1 mil) Bond Pad: 110 ^m x 110 ^m (4.3 x


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PDF ACTS138MS MIL-PRF-38535 ACTS138MS 25Micron 2390nm 2390nm 525nm ACTS138M
CDFP4-F14

Abstract: No abstract text available
Text: , File Number 3993.1 ACS08MS Die Characteristics DIE DIMENSIONS: PASSIVATION Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils ±1 mil) Bond Pad: 110^m x 110^m (4.3


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PDF ACS08MS MIL-PRF-38535 ACS08M 25Micron CDFP4-F14
Not Available

Abstract: No abstract text available
Text: orporation 1998 ACS02MS Die Characteristics DIE DIMENSIONS: PASSIVATION: Size: 2390nm x 2390nm (94


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PDF ACS02MS ACS02MS MIL-PRF-38535 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: ±0.15nm DIE DIMENSIONS: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25^m (20.6 mils ±1 mil


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PDF ACS05MS ACS05MS MIL-PRF-38535 1-800-4-HARRIS
HS9-705RH-Q

Abstract: HS-705RH 705RH rad hard reset ld smd transistor tbdm
Text: Number 4703 Advance Information Die Characteristics DIE DIMENSIONS: Size: 2390nm x 2390nm (94


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PDF S-705RH HS-705RH HS9-705RH-Q 705RH rad hard reset ld smd transistor tbdm
Not Available

Abstract: No abstract text available
Text: orporation 1998 ACS32MS Die Characteristics DIE DIMENSIONS: PASSIVATION Size: 2390nm x 2390nm (94


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PDF ACS32MS ACS32MS MIL-PRF-38535 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: : BACKSIDE FINISH: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25^m (20.6 mils ±1 mil


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PDF ACS253MS MIL-PRF-38535 ACS253MS 25Micron
Not Available

Abstract: No abstract text available
Text: Characteristics DIE DIMENSIONS: SUBSTRATE POTENTIAL: Unbiased Insulator Size: 2390nm x 2390nm (94 mils x


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PDF ACS139MS MIL-PRF-38535 ACS139MS 25Micron
Not Available

Abstract: No abstract text available
Text: Die Characteristics DIE DIMENSIONS: Unbiased Insulator Size: 2390nm x 2390nm (94mils x 94mils


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PDF ACS151MS MIL-PRF-38535 ACS151MS 25Micron IS09000
Not Available

Abstract: No abstract text available
Text: : Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25^m (20.6 mils ±1 mil) Bond Pad: 110


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PDF ACS253MS MIL-PRF-38535 ACS253MS 25Micron
Not Available

Abstract: No abstract text available
Text: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ± 25^m (20.6 mils ± 1 mil) Bond Pad: 1


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PDF ACS14MS ACS14MS 400mV 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30nm ±0.15nm DIE DIMENSIONS: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils 1 mil) Bond Pad: 1 lO^im x 1 lO^im (4.3 x


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PDF ACS11MS ACS11MS 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: DIMENSIONS: PASSIVATION: Size: 2390nm x 2390nm (94 mils x 94 mils) Thickness: 525nm ±25nm (20.6 mils


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PDF ACS04MS ACS04MS MIL-PRF-38535 1-800-4-HARRIS
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