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HCTF235L055000BR00 Vishay Beyschlag TCO 24V 55A 235C (455F) AXIAL

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sfh610 equivalent

Abstract: No abstract text available
Text: -4 SFH628A-2 SFH628A-3 SFH628A-4 SFH628-2 SFH628-3 SFH628-4 Ö 235L05 OQ'ÌSbMB 5-243 TTM


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PDF SFH6106 SFH6116 SFH6156 SFH6186 SFH6206 SFH6286 SFH610, SFH6106, SFH6106-1 sfh610 equivalent
transistor smd AsG

Abstract: BSS88 M7 SMD DIODE MARKING
Text: 7a = 25-C 1 ■Data Book ±20 Class 1 ESD Sensitivity (HBM) as per MIL-STD 883 Û 235L05 , = 0.01, Tc=25'C ^(B R )D S S = f ( T ¡ ) Û 235L05 G133GÖ4 7^7 Data Book 362 06.99


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PDF BSS88 Q62702-S287 Q62702-S303 Q62702-S576 E6288 E6296 transistor smd AsG BSS88 M7 SMD DIODE MARKING
Not Available

Abstract: No abstract text available
Text: – Sem iconductor Group Û 235L.05 011fl572 77 23T ■1998-11-01 TLE 4260 SIEM ENS , Overtemperature Reverse polarity GND Block Diagram Ô 235L.05 0116573 17b ■Semiconductor Group 78


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PDF Q67000-A8187 P-T0220-5-1 Q67000-A9044 P-T0220-5-2 P-T0220-5-H/S 011fl5fl4
Not Available

Abstract: No abstract text available
Text: 2064 ■max Unit 1 998-11-01 Ö 235L05 D1BSH73 ■SIEMENS CGY 195 , =417p.s, duty cycle 10% , Pin=3dBm Semiconductor Group 2073 ■1998-11-01 Ö 235L05 OlEEBâE Ã


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PDF CGY195 Q68000-A9Ã SCT595 235L05 G12S3fl3
Not Available

Abstract: No abstract text available
Text: ) Pulse test: t < 300ns; D < 2% Semiconductor Group 1042 ' m Ö 235L05 OlHOfifl? 063 1998-11-01


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PDF C62702-C2487 OT-23 flE35bos
Not Available

Abstract: No abstract text available
Text: IO-5 10'* 10"3 IO"2 10-1 s 10° — Semiconductor Group » I 2212 ñ 235L.05


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PDF Q68000-A8487 Q68000-A8437 OT-23 EHA0700* 0235bG5 01225Gb D1225D7 6235bG5
ic bsp 350

Abstract: 235L Q67000-S227
Text: & 235L.05 ODÖlbBl 705 SIEMENS BSP 350 Typ. short circuit current ■lise) = <(Von); Vbb = 13.5V; tj =


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PDF Q67000-S227 ic bsp 350 235L Q67000-S227
Not Available

Abstract: No abstract text available
Text: 1 998-11-01 Ö 235L05 D121ö3b 5 m ■SIEMENS BFP 23 BFP 26 Collector cutoff current


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PDF Q62702-F622 Q62702-F722 235L05 EHP0Q657 535fe
Not Available

Abstract: No abstract text available
Text: Semiconductor Group 1385 ■1998-11-01 Û 235L05 0121ÛD3 DLE ■S IE M E N S BFN 21 Total


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PDF Q62702-F1059 OT-89 35L05 fl235b05 0535bG5
Not Available

Abstract: No abstract text available
Text: mounted on alumina BAS 125 Reverse cu rren t / Semiconductor Group r = / ( V 309 Ô 235L05


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PDF Q62702-D1316 Q62702-D1321 OT-23 EHM7002 EHA07005 Q62702-D1322 EHA0700* Q62702-D1323 CHA07006 flS35fci05
Not Available

Abstract: No abstract text available
Text: information se e chapter Package Outlines. Sem iconductor Group 275 : ■Û 235L05 D lE D E fl


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PDF Q62702-A118 OT-23 CHA07Ã Q62702-A730 EHA0700S Q62702-A711 EHA07004 Q62702-A774 EHA07006 0235bOS
Hall Siemens

Abstract: 3 PIN hall effect sensor 4 pin hall sensor 4 pin package hall sensor circuit diagram of hall effect hall 7a Hall Effect 3 pin hall effect sensor spice model AF03 hall 4 pins
Text: 10.94 ■Ô 235L05 00bû4ô2 T4T ■This Material Copyrighted By Its Respective Manufacturer SIEMENS


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PDF 00bfl4fl3 KSY44 235b05 Hall Siemens 3 PIN hall effect sensor 4 pin hall sensor 4 pin package hall sensor circuit diagram of hall effect hall 7a Hall Effect 3 pin hall effect sensor spice model AF03 hall 4 pins
Not Available

Abstract: No abstract text available
Text: 1167 Ö 235L.05 0 1 2 1 0 1 2 fllfl SIEM ENS DC current gain BCX68 Collector-emitter


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PDF Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 OT-89 BCX68 fiS35bCI5
siemens rs 1016

Abstract: 012E3
Text: -2.8 -4.7 -8.1 -10.9 -12.9 -14.8 -18.7 -20.6 -21.5 -25.0 1998-11-01 Ö 235L.05 0152331


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PDF Q62702-G44 235LD5 fl235b05 siemens rs 1016 012E3
Not Available

Abstract: No abstract text available
Text: 1998-11-01 Û 235L.05 D1521L5 TSQ ■SIEMENS BFS 17W Total power dissipation p tot = ^ ( 7A*. TS


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PDF Q62702-F1645 OT-323 D1521L5 fl235LD5 A235b05 01521b?
Not Available

Abstract: No abstract text available
Text: 925 ■Ö 235L05 0120770 T H ■1 998-11 -01 SIEMENS BCR 148W Total power


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PDF Q62702-C2291 OT-323 Therma148W 235L05 0235b05
siemens igbt

Abstract: C67076-A2015-A2 IGBT Single 1200v 1000a tsc 3001 3001li
Text: Semiconductor Group Page 3 ■Ö 235L05 OGbüSSS S?i4 BSM 300 G A 160 D Power dissipation Ptot = '(Tc) Ptof


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PDF 300ga16a C67076-A2015-A2 3001trg 0535bOS 3001lic 3001U1 A235b05 siemens igbt C67076-A2015-A2 IGBT Single 1200v 1000a tsc 3001 3001li
Not Available

Abstract: No abstract text available
Text: ■Ö 235L.05 0DÔ1213 Obb SIEMENS TEMPFET BTS110 Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Information) Type vD S h ^D S (o n ) Package Ordering Code BTS 110 100 V 10 A 0.2 TO-220AB C67078-A5008-A2 n Maximum Ratings Parameter Symbol Values


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PDF BTS110 O-220AB C67078-A5008-A2 1235bD5 023SbQS E3045 C67078-A5008-A4
Not Available

Abstract: No abstract text available
Text: ■I 1 99 8-1 1-01 Ö 235L05 G1E2E47 ■SIEMENS BSS 79 BSS 81 Electrical


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PDF Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 OT-23 EHPQ0674
Not Available

Abstract: No abstract text available
Text: ) Semiconductor Group Permissible Pulse Load Ptotmax/PtotDC = f Up) 1741 Ö 235L05 0 1 E E 1 4 3


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PDF 900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S
Not Available

Abstract: No abstract text available
Text: – 1998-11-01 Ô 235L05 Q1E1Û30 0^0 ■SIEMENS BFP 22 BFP 25 Electrical Characteristics at 7a =


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PDF Q62702-F621 Q62702-F721 E35b05 fiS35b05
Not Available

Abstract: No abstract text available
Text: J C = / ( fp) Diode parameter: D = fp / T parameter: Tj Ô 235L05 0060304 047


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PDF C67070-A2702-A67 fl23St 00fi03Q3 235L05
Not Available

Abstract: No abstract text available
Text: Figure 6 Test Circuit 2 Semiconductor Group I Ô 235L.05 □ObBOb'i 2Sb ■8 TLE 4904


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PDF Q67006-A9011 Q67006-A9027 Q67006-A9028 623SbD5 00b3Dbà AES01237 fl23Sb05 0Dh307Ã
Not Available

Abstract: No abstract text available
Text: ^FE /c = 10 mA, VCE = 8 V 50 1689 ■100 200 1998-11-01 Û 235L05 DlSEDTl 031


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PDF 900MHz Q62702-F1315 OT-23 053SbDS BFR182 6235b05
Not Available

Abstract: No abstract text available
Text: 16 - - 7] = 125 °C 45 - Ô 235L.05 0Dfl027b 352 ■Semiconductor Group 403


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PDF C67070-A2302-A70 C67070-A2308-A70 fiE35t 23Sfc
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