The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
225MHBS70K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 1275V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT
225MHBS60K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 1100V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT
225MHBS45K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 800V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT
225MHBS50K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 900V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT
TMK325B7225MH-T TAIYO YUDEN Capacitor, Ceramic, Chip, General Purpose, 2.2uF, 25V, ±20%, X7R, 1210 (3225 mm), 0.005T, -55º ~ +125ºC, 7 Reel/4mm pitch
KC355WD72E225MH01K Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 250V, 20% +Tol, 20% -Tol, X7T, -33/+22% TC, 2.2uF, Surface Mount, 2220, CHIP
SF Impression Pixel

Search Stock (20)

  You can filter table by choosing multiple options from dropdownShowing 20 results of 20
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
225MHBS60K2H Illinois Capacitor Inc Richardson RFPD - - -
225MHBS70K2H Illinois Capacitor Inc Richardson RFPD - - -
KC355WD72E225MH01K Murata Manufacturing Co Ltd Chip1Stop 485 $5.35 $5.24
KC355WD72E225MH01K Murata Manufacturing Co Ltd Avnet - $1.79 $1.59
KC355WD72E225MH01K Murata Manufacturing Co Ltd Chip One Exchange 74,004 - -
KR355WD72E225MH01K Murata Manufacturing Co Ltd Avnet - $1.79 $1.59
KR355WD72E225MH01K Murata Manufacturing Co Ltd Avnet - €2.69 €1.69
KR355WD72E225MH01K Murata Manufacturing Co Ltd Chip One Exchange 98,494 - -
KRM55TR72E225MH01K Murata Manufacturing Co Ltd Future Electronics - $3.85 $3.85
KRM55TR72E225MH01K Murata Manufacturing Co Ltd Chip One Exchange 97,253 - -
KRM55TR72E225MH01K Murata Manufacturing Co Ltd Chip1Stop 940 $2.18 $2.15
KRM55TR72E225MH01K Murata Manufacturing Co Ltd Avnet - $0.86 $0.75
KRM55TR72E225MH01L Murata Manufacturing Co Ltd Rutronik - $1.68 $1.31
KRM55TR72E225MH01L Murata Manufacturing Co Ltd Chip1Stop 400 $0.98 $0.98
PEG225MH3900QE1 KEMET Corporation Avnet - €8.79 €5.69
PEG225MH3900QE1 KEMET Corporation Avnet - - -
SM042C225MHN360 AVX Corporation Bristol Electronics 7 $36.00 $36.00
TMK325B7225MH-T TAIYO YUDEN Chip1Stop 1,500 $0.34 $0.34
TMK325B7225MH-T TAIYO YUDEN Avnet - $0.09 $0.07
TMK325BJ225MHHT TAIYO YUDEN Avnet - $0.11 $0.07

No Results Found

225MH Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Mosfet

Abstract: SSF11NS65F
Text: V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L= 22.5mH 281 mJ IAS Avalanche Current @ L= 22.5mH 5 A -55 to + 150 °C PD @TC = 25Â


Original
PDF SSF11NS65F 36ohm O220F SSF11NS65F Mosfet
2013 - Mosfet

Abstract: SSF11NS70UF
Text: Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L= 22.5mH 45 mJ IAS Avalanche Current @ L= 22.5mH 2 A -55 to +150 °C PD @TC = 25°C TJ TSTG


Original
PDF SSF11NS70UF O220F SSF11NS70UF Mosfet
2013 - Mosfet

Abstract: SSF11NS65 diode 945
Text: @ L= 22.5mH 281 mJ IAS Avalanche Current @ L= 22.5mH 5 A -55 to + 150 °C


Original
PDF SSF11NS65 36ohm O-220 SSF11NS65 Mosfet diode 945
PM-9630

Abstract: HT-503 225MH
Text: 22.5mH MIN TIE:5+6 lKHz IV lOOrnA ® SUPERWORLD ELECTRONICS (S) PTE LTD


OCR Scan
PDF HT-503 SEPB3HT-50379 PM-9630 225MH
2013 - Mosfet

Abstract: SSF11NS60
Text: VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L= 22.5mH 281 mJ IAS Avalanche Current @ L= 22.5mH 5 A -55 to +150 °C PD @TC = 25°C TJ


Original
PDF SSF11NS60 O-220 SSF11NS60 11NS60 Mosfet
2013 - Mosfet

Abstract: SSF11NS60D
Text: Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L= 22.5mH 281 mJ IAS Avalanche Current @ L= 22.5mH 5 A -55 to +150 °C PD @TC = 25°C TJ TSTG


Original
PDF SSF11NS60D O-252 SSF11NS60D O-252 Mosfet
Not Available

Abstract: No abstract text available
Text: 2-10(tie 1+4, 7+8). 600Vrms for 1 second between 2-1. 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC, 2-5(tie


OCR Scan
PDF 400kHz, IEC60950, UL60950/CSA60950 AS/NZS60950: 250Vrms. 150VDC.
Not Available

Abstract: No abstract text available
Text: ., 200Hz, 1.0VAC, 65mADC, 1 - 2 , Lp. 225mH m in., 200Hz, 1.0VAC, lOOmADC, 1 - 2 , Lp. ( l- 2 ) :( 4 - 3


OCR Scan
PDF 4000Hz, 4000Hz. 1000Hz, 1000VAC, 1250VAC 260mH 200Hz, 65mADC, 225mH
smd transistor 2A

Abstract: SMD Transistor nc
Text: temperature *2 l= 22.5mH ,IAS=3.2A,VDD=50V,RG=25 ,Startion TJ=25 *3 ISD 3.2A,di/dt 200A/ S,VDD BVDSS


Original
PDF KQB3N30 O-263 smd transistor 2A SMD Transistor nc
225MH

Abstract: No abstract text available
Text: 1. Dimensions: 0.098 0.030 Typ 10 X o o in m H H H R XFMRS XFADSL22S WWW • y y y u u. 5 1 0.550 Max X o o o , r rb 490 Max- o o Tape -0.020 Typ "□ □ □ □ ■0.050 Typ _L Q_ m CM o T Q_ o o 2.Schematic: 10< PRI D C c 1 3 2 4 SEC 3.Electrical Specifications: ®25°C Turns Ratio: (P10-7):(P1 -4) = 1:1.42±2% (TIE P3-2.P8-9) PIN10-7 OCL: 2.25mH ±10% @10KHz 0.1V (TIE PIN9-8) Ls PIN10-7 LL: 30uH Max @100KHz 0.1V (CONNECT PIN9-8, Short 1-4) Ls DC Res


OCR Scan
PDF XFADSL22S P10-7) PIN10-7 10KHz 100KHz P10-8 3000VAC P10-1 UL1950 225MH
Not Available

Abstract: No abstract text available
Text: ELECTRICAL CHARACTERISTICS: Inductance: 2.25mH ±10% @10KHz,0.1V 2-5 with 4-1 short Leakage Inductance: 8uH Max lOOKHz,0.02V 2-5 with 4-1 and 10-6 short Turns Ratio: 1:3CS±2% @100KHz,50mV Line Side DC Resistance: 3.30 Ohms Maxl-4=2-5 @25°C Chip Side DC Resistance: 0.75 Ohms Max 10-6 @25°C Longitudinal Balance: lOKHz -400KHz 53dB Min THD: @15KHz,3.8V-7ldB Min Return Loss: from 50KHz to 2MHz 12dB Max imi Transtek Magnetics Magnetics products for a changing woild.™ TMT7)I wri I016CT (Hww W-YEAR WW-WEEK 20- 40


OCR Scan
PDF 10KHz 100KHz -400KHz 15KHz 50KHz I016CT 40-Line 1500Vrms TMT70016CT TMD00467
Not Available

Abstract: No abstract text available
Text: 600VAC for 1 secon d between 1 -2 . 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC, 2 - 5 (tie 1+4), Ls, -40*C to


OCR Scan
PDF 400kHz, IEC60950, UL60950/CSA60950 AS/NZS60950: 300Vrms. 150VDC.
12205

Abstract: 85c6b 50896
Text: . INDUCTANCE: LEAKAGE INDUCTANCE: TURNS RATIO: TOTAL HARMONIC DISTORTION: 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC


OCR Scan
PDF 300Vrms. 150VDC. 12205 85c6b 50896
6F6L

Abstract: 225MH
Text: 600Vrms for 1 second between 2-1. 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC, 2 -5 (tie 1+4), Ls, -40°C to


OCR Scan
PDF 400kHz, 250Vrms. 150VDC. 6F6L 225MH
TRANSISTOR FS 2025

Abstract: THD219HI
Text: 2.0 1.5 0.6 I c -5A f = 32KHz R th= 1 9 °C/W L- 225mH 0=5.1 fj. F


OCR Scan
PDF THD219HI ISOWATT218 E81734 THD219HI IS0WATT218 P025C TRANSISTOR FS 2025
2012 - 4N65F

Abstract: 4n65
Text: Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=4A, VDD=150V, L= 22.5mH


Original
PDF HY4N65T HY4N65FT O-220AB ITO-220AB 2002/95/EC O-220AB ITO-220AB MIL-STD-750 HY4N65T 4N65T 4N65F 4n65
Not Available

Abstract: No abstract text available
Text: +25°C, L = 2.25mH , RG = 25 , Peak IL = 20A Microsemi reserves the right to change, without notice, the


Original
PDF ARF1511 40MHz ARF1511
2008 - ARF1511

Abstract: 225MH
Text: +25°C, L = 2.25mH , RG = 25, Peak IL = 20A Microsemi reserves the right to change, without notice, the


Original
PDF ARF1511 40MHz ARF1511 125lb 225MH
2005 - rf power generator

Abstract: ARF1511 750w planar transistor ARF 250v 1500w
Text: . 3 Starting Tj = +25°C, L = 2.25mH , RG = 25, Peak IL = 20A APT Reserves the right to change, without


Original
PDF ARF1511 40MHz ARF1511 125lb rf power generator 750w planar transistor ARF 250v 1500w
2015 - Not Available

Abstract: No abstract text available
Text: . Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 22.5mH , IAS = 4 A, VDD = 50V


Original
PDF 4N70K-MT 4N70K-MT QW-R205-037
2012 - Not Available

Abstract: No abstract text available
Text: Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=4A, VDD=150V, L= 22.5mH Operating


Original
PDF HY4N65D HY4N65M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC
capacitor 47nf

Abstract: cfl ballast crest factor bridge rectifier 1A irf ballast IR2520D cfl ballast transistor Electronic ballast 14w cfl circuit 1uF 400V capacitor 10 ELECTRONIC 10uF 450v
Text: , 2.25mH , 5%, 1Apk Transistor, MOSFET IRFU430 Resistor, 1M, 1206, 100V Resistor, 68.1K, 1%, 1206 Diode , Driver IR2520D Inductor, 2.25mH , 5%, 1Apk Transistor, MOSFET IRFU430 Resistor, 1M, 1206, 100V


Original
PDF AN-1073 IR2520D capacitor 47nf cfl ballast crest factor bridge rectifier 1A irf ballast cfl ballast transistor Electronic ballast 14w cfl circuit 1uF 400V capacitor 10 ELECTRONIC 10uF 450v
2008 - power transistor 1802

Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Text: limited by maximum junction temperature. 3 Starting Tj = +25°C, L = 2.25mH , RG = 25, Peak IL = 20A


Original
PDF ARF1511 40MHz ARF1511 power transistor 1802 750w planar transistor C 4927 rf power generator ARF 250v 1500w
2014 - 4N65M

Abstract: No abstract text available
Text: Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=4A, VDD=150V, L= 22.5mH Operating


Original
PDF HY4N65D HY4N65M O-252 O-251 2002/95/EC O-252 O-251 250mA 125oC -55oC 4N65M
2008 - SS1HB-R10035

Abstract: No abstract text available
Text: high- core type) Current rating(03 shows 0.3A) Inductance(225 shows 22.5mH ) AC Line Filters VOL


Original
PDF SS17HB SS17HB-03225 SS17HB-04125 SS17HB-05100 SS17HB-06085 SS17HB-07065 SS17HB-08050 SS17HB-10025 SS17HB-11020 SS17HB-13018 SS1HB-R10035
Supplyframe Tracking Pixel