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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT3462AES6#TRM Linear Technology LT3462 - Inverting 1.2MHz/2.7MHz DC/DC Converters with Integrated Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3465ES6#TRM Linear Technology LT3465 - 1.2MHz White LED Step-Up Converters with Built-In Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1574CS-3.3#TR Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LT3462ES6#TRMPBF Linear Technology LT3462 - Inverting 1.2MHz/2.7MHz DC/DC Converters with Integrated Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LT3465ES6#TRMPBF Linear Technology LT3465 - 1.2MHz White LED Step-Up Converters with Built-In Schottky in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1574CS#PBF Linear Technology LTC1574 - High Efficiency Step-Down DC/DC Converters with Internal Schottky Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C

200v 30A schottky Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: ) MSL Rating 1 Description Diode Schottky 8A 20V – 200V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Schottky 16A 20V – 200V Diode Schottky 20A 20V – 200V Diode Schottky 25A 20V – 200V Diode Schottky 30A 20V – 200V Diode Schottky 30A 20V – 45V Diode Schottky 40A 20V – 200V Diode Superfast 8A 200V , 200V – 600V Diode Superfast 16A 200V – 600V Diode Superfast 30A 200V – 600V Diode Superfast


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PDF SB820D SB8200D SB820DC SB8200DC SB1020D SB10200D SB1020DC SB10200DC SB1620D SB16200D
2014 - Not Available

Abstract: No abstract text available
Text: Component Die Material Doped Silicon* Terminal Finish Matte Tin (Sn) Description Diode Schottky 6A 20V – 100V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Schottky 20A 20V – 200V Diode Schottky 25A 20V – 200V Diode Schottky 30A 20V – 200V Diode Schottky 30A 20V – 45V Diode Schottky 40A 20V – 200V Diode Superfast 10A 50V – 600V Diode Superfast 16A 50V – 600V Diode Superfast 30A 200V – 600V Diode Ultrafast 10A 50V â


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PDF ITO-220 SB620FCT SB6100FCT SB820FCT SB8200FCT SB1020FCT SB10200FCT SB1620FCT SB16200FCT SB2020FCT
2014 - Not Available

Abstract: No abstract text available
Text: Silicon* Terminal Finish Matte Tin (Sn) Description Diode Schottky 6A 20V – 100V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Schottky 20A 20V – 200V Diode Schottky 25A 20V – 200V Diode Schottky 30A 20V – 200V Diode Schottky 30A 20V – 45V Diode Schottky 40A 20V – 200V Diode Superfast 10A 50V – 600V Diode Superfast 16A 50V – 600V Diode Superfast 30A 200V – 600V Diode Ultrafast 10A 50V – 800V Diode Ultrafast 16A


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PDF O-220 SB620CT SB6100CT SB820CT SB8200CT SB1020CT SB10200CT SB1620CT SB16200CT SB2020CT
50A 1200V SCR

Abstract: scr 8a 200v do213ab SCR 30A 100V 5A 200V SCR die 1n4436 US60A 1N1183 eh12a USD635C
Text: .25 Quick Selection Guide Voltages SCHOTTKY Current Ratings Frequency KHz 10 200 1 600 , reference or specific customer requirements. R 2 Military Qualified Parts Schottky Ultrafast & , Axial Lead Rectifiers Schottky Ultrafast (FRED) Rectifiers DO41 1A: 1N5817 to 19 MS104 to , Surface Mount Rectifiers Schottky Ultrafast (FRED) Rectifiers DO213AB (glass melf) 1A: 5817SM , Mount Rectifiers Schottky Ultrafast (FRED) Rectifiers DO214AA (SMBJ) 1A: 5817SMJ to 19SMJ


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PDF 394hex 450sq. 678hex 50A 1200V SCR scr 8a 200v do213ab SCR 30A 100V 5A 200V SCR die 1n4436 US60A 1N1183 eh12a USD635C
2014 - Not Available

Abstract: No abstract text available
Text: Matte Tin (Sn) Description Diode Schottky 16A 30V – 200V Diode Schottky 20A 30V – 200V Diode Schottky 30A 30V – 200V Diode Schottky 40A 30V – 200V Diode Schottky 60A 30V – 200V Diode Schottky 80A 30V – 200V Diode Superfast 20A 50V – 600V Diode Superfast 30A 50V – 600V Diode Superfast


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PDF S16D30C S16D200C S20D30C S20D200C S30D30C S30D200C S40D30C S40D200C S60D30C S60D200C
Schottky diode 50A 100v

Abstract: diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode
Text: OLTRONICS INC SO DE | t.77fiScì4 OODGD4S M D "f~-Z3~0l Oltronics, Inc. Power Schottky Diodes , DIODE MC Series Diodes are Schottky rectifiers of superior performance due to their stability at high , guard ring, which assures that the Schottky junction will operate as a rectifier diode. This , temperature resistance coefficient that approximately compensates the positive coefficient of the Schottky junction. This compensation assures the operation of the Schottky rectifier, in a stable regime up to 200Â


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PDF 77fiScà 2C100: 2C200: Schottky diode 50A 100v diode schottky 200A DO-5 Package power diode 200A 100v schottky power diode
2015 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR30200C Preliminary DIODE 30A , 200V SCHOTTKY BARRIER RECTIFIER 1  DESCRIPTION TO-220 The UTC MBR30200C is a 30A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high , Instantaneous Forward Voltage VF IF= 30A , TC=25°C 1.1 V IF= 30A , TC=125°C 1.0 V VR= 200V , TJ=25°C 50 μA Instantaneous Reverse Current IR VR= 200V , TJ=125°C 10 mA Notes: 1. The heat generated must


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PDF MBR30200C O-220 MBR30200C O-220F1 MBR30200CL-TA3-T QW-RR202-011
2013 - CMSH3-100MHV Series

Abstract: PB CMSH3-100MHV Series CMSH3-100MHV 200v 30A schottky
Text: Product Brief CMSH3-100MHV CMSH3-200MHV CMSH3-150MHV 3.0A , 100V thru 200V Schottky Rectifiers in the SMB package Central Semiconductor's CMSH3-100MHV series of 100V, 150V and 200V high efficiency 3 amp surface mount Schottky rectifiers provide high reverse voltage capability. This makes these devices ideal for use in applications where energy efficiency, power density and small package size are , 3.0A , 100V thru 200V Schottky Rectifiers in the SMB package Part Marking DEVICE CMSH3-100MHV CMSH3


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PDF CMSH3-100MHV CMSH3-200MHV CMSH3-150MHV 15x4x15 38x10x38 15x15x9 38x38x23 15x15x18 38x38x46 CMSH3-100MHV Series PB CMSH3-100MHV Series 200v 30A schottky
2012 - SMD MARKING CODE 50A

Abstract: 200v 30A schottky CMSH3-200MHV
Text: Product Brief CMSH3-100MHV CMSH3-200MHV CMSH3-150MHV 3.0A , 100V thru 200V Schottky Rectifiers in the SMB package Central Semiconductor's CMSH3-100MHV series of 100V, 150V and 200V high efficiency 3 amp surface mount Schottky rectifiers provide high reverse voltage capability. This makes these devices ideal for use in applications where energy efficiency, power density and small package size are , 3.0A , 100V thru 200V Schottky Rectifiers in the SMB package Part Marking DEVICE CMSH3-100MHV CMSH3


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PDF CMSH3-100MHV CMSH3-200MHV CMSH3-150MHV 15x4x15 38x10x38 15x15x9 38x38x23 15x15x18 38x38x46 SMD MARKING CODE 50A 200v 30A schottky
2013 - CMSH3-100MFL Series

Abstract: CMSH3-100MFL SMA-FL
Text: Product Brief CMSH3-100MFL CMSH3-200MFL CMSH3-150MFL 3.0A , 100V thru 200V Schottky Rectifiers in the SMAFL package Central Semiconductor's CMSH3-100MFL, CMSH3-150MFL and CMSH3-200MFL are extremely efficient, high voltage, silicon Schottky rectifiers with low total conduction losses, packaged in the low profile SMAFL surface mount case. The SMAFL fits on existing industry standard SMA mounting pad layouts , -150MFL Mechanical Drawing - SMAFL 3.0A , 100V thru 200V Schottky Rectifiers in the SMAFL package Part Marking


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PDF CMSH3-100MFL CMSH3-200MFL CMSH3-150MFL CMSH3-100MFL, CMSH3-150MFL CMSH3-100MFL Series SMA-FL
2014 - Not Available

Abstract: No abstract text available
Text: Material Doped Silicon* Terminal Finish Matte Tin (Sn) Description Diode Schottky 6A 20V – 100V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode , 50V – 600V Diode Superfast 16A 50V – 600V Diode Superfast 30A 200V – 600V Diode Ultrafast 8A


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PDF ITO-220A SB620F SB6100F SB820F SB8200F SB1020F SB10200F SB1620F SB16200F ER800F
2014 - Not Available

Abstract: No abstract text available
Text: Matte Tin (Sn) Description Diode Schottky 6A 20V – 100V Diode Schottky 8A 20V – 200V Diode Schottky 10A 20V – 200V Diode Schottky 16A 20V – 200V Diode Superfast 8A 50V – 600V Diode , 50V – 600V Diode Superfast 30A 200V – 600V Diode Ultrafast 8A 50V – 800V Diode Ultrafast 10A


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PDF O-220A SB620 SB6100 SB820 SB8200 SB1020 SB10200 SB1620 SB16200 ER800
smd code marking HD

Abstract: schottky 400v SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc SMD Marking Code 10A Smd marking code MARKING CODE VF 10A Schottky bridge CMSH1-100M full bridge rectifier smd
Text: 200V , 1.0A VF = 1.05V, trr = 50ns IR = 5.0A SMDIP Marking Code: Full P/N CBRHDSH2-100 Schottky , -40 Schottky Bridge 40V, 5.0A VF = 0.37V (typ) IR = 40A (typ) SMDIP Marking Code: Full P/N CMSH1-20ML Schottky Rectifier 20V, 1.0A VF = 0.38V CMSH1-40ML Schottky Rectifier 40V, 1.0A VF = 0.40V CMSH1-100M Schottky Rectifier 100V, 1.0A VF = 0.85V CMSH2-100M Schottky Rectifier 100V, 2.0A VF = 0.85V CMSH3-100MA Schottky Rectifier 100V, 3.0A VF = 0.85V CMSH5-100 Schottky Rectifier 100V, 5.0A VF


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PDF CBRHD-10 500mA CBD10 CBR1-D100S CBR1F-D040S 200ns CBR1U-D020S 5310M CMR5U-08 100ns smd code marking HD schottky 400v SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc SMD Marking Code 10A Smd marking code MARKING CODE VF 10A Schottky bridge CMSH1-100M full bridge rectifier smd
1996 - fuji diode

Abstract: YG878C20 YG878C20R FUJI ELECTRIC DIODE Catalog diode 200V30A origin semiconductor diode catalog fuji
Text: http://www.fujisemi.com YG878C20R ( 200V , 30A ) FUJI Diode Ultra Low IR Schottky Barrier , element Mechanical characteristics Item Mounting torque Approximate mass 1 YG878C20R ( 200V , 30A ) FUJI Diode http://www.fujisemi.com 360 360 I0 VR 2 YG878C20R ( 200V , 30A , (V) 1000 YG878C20R ( 200V , 30A ) FUJI Diode http://www.fujisemi.com Transient Thermal , 2 10 YG878C20R ( 200V , 30A ) FUJI Diode http://www.fujisemi.com WARNING 1. his Catalog


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PDF YG878C20R O-220F YG878C20 fuji diode YG878C20 YG878C20R FUJI ELECTRIC DIODE Catalog diode 200V30A origin semiconductor diode catalog fuji
IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: IRCI Module MTK IRCI Module MTK IRCI Module MTK IRCI Module MTK Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB Schottky SMB , 3 1600V 100.000A MTK MODULES 1,000 15V 1A Schottky Discrete Diode in a SMB package 3,000 15V 1A Schottky Discrete Diode in a SMB package 1,000 15V 1A Schottky Discrete Diode in a SMB package 3,000 15V


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
1996 - ORIGIN ELECTRIC CATALOG

Abstract: YA878C20R Catalog diode diode Catalog diode 200v 30a PUT catalog 200v 30A schottky fuji electric mark
Text: http://www.fujisemi.com YA878C20R ( 200V , 30A ) FUJI Diode Ultra Low IR Schottky Barrier , Approximate mass 1 YA878C20R ( 200V , 30A ) FUJI Diode http://www.fujisemi.com 360 360 I0 VR 2 YA878C20R ( 200V , 30A ) FUJI Diode http://www.fujisemi.com Junction Capacitance , 100 VR Reverse Voltage (V) 1000 YA878C20R ( 200V , 30A ) FUJI Diode http , Time (sec) 4 1 10 2 10 YA878C20R ( 200V , 30A ) FUJI Diode http


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PDF YA878C20R O-220AB YA878C20 ORIGIN ELECTRIC CATALOG YA878C20R Catalog diode diode Catalog diode 200v 30a PUT catalog 200v 30A schottky fuji electric mark
2014 - TO-252AA Package

Abstract: No abstract text available
Text: Thru Hole (1)(7) TO-247AC (mod) 600 2.00 30 45 30A , 200A/us, 200V 580 30 , , 200V 580 30 VS-30EPH06HN3 (1)(7) TO-247AC (mod) 600 2.6 30 31 30A , 200A , 2.00 30 45 30A , 200A/us, 200V 580 30 VS-ETU3006S-1xHM3 Power Plastic SMD (1)(3)(6) TO-263AB (D2PAK) 600 2.00 30 45 30A , 200A/us, 200V 580 (1)(3)(6) TO-263AB (D2PAK) 600 2.6 30 26 30A , 200A/us, 200V 280 Power Plastic SMD (1)(3)(6) 30


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PDF AEC-Q101 O-220, O-262, O-247, VMN-PT0358-1402 TO-252AA Package
2011 - Not Available

Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode (150V~ 200V / 3.0A ) SCD315H AND SCD320H OUTLINE DIMENSIONS , ~ 200V / 3.0A ) FIG.1 - FORWARD CURRENT DERATING CURVE 90 3.5 RESISTIVE OR INDUCTIVE LOAD P.C.B , Voltage class : 15 = 150V, 20 = 200V * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 , Junction capacitance Min. Typ. Max. Unit SCD315H - 0.83 0.88 V IF = 3.0A Repetitive peak reverse current Type IF = 3.0A Forward voltage (NOTE 1) Symbol Conditions


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PDF SCD315H SCD320H DO-214AC 50mVP-P
2003 - 200v 3A schottky

Abstract: SHD114436 SHD114436A SHD114436B
Text: , REV. - POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: · Switching Power Supply · , 30A , Pulse, TJ = 25 °C (per leg) measured at the leads 0.76 V VF2 @ 30A , Pulse, TJ = 125 °C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V , Pulse, 0.030 mA TJ = 25 °C (per leg) IR2 @VR = 200V , Pulse, 2.0 mA TJ = 125 °C (per leg) 600 pF Max. Junction Capacitance CT @VR = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 200V


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PDF SHD114436 SHD114436A SHD114436B 200v 3A schottky SHD114436 SHD114436A SHD114436B
2004 - 200v 3A schottky

Abstract: SHD114446 SHD114446A SHD114446B
Text: ) (per leg) Due to the nature of the 200V Schottky devices, some degradation in trr performance at high , , REV. - POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: · Switching Power Supply · , Symbol VF1 Condition Max. Units 0.92 V @ 30A , Pulse, TJ = 25 °C (per leg) measured at the leads 0.76 V VF2 @ 30A , Pulse, TJ = 125 °C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V , Pulse, 0.7 mA TJ = 25 °C (per leg) 16 mA IR2 @VR = 200V , Pulse, TJ = 125 °C (per


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PDF SHD114446 SHD114446A SHD114446B 200v 3A schottky SHD114446 SHD114446A SHD114446B
2006 - SHD114436

Abstract: SHD114436A SHD114436B
Text: , REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: · Switching Power Supply · , 30A , Pulse, TJ = 25 °C (per leg) measured at the leads 0.76 V VF2 @ 30A , Pulse, TJ = 125 °C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V , Pulse, 0.2 mA TJ = 25 °C (per leg) IR2 @VR = 200V , Pulse, 2.0 mA TJ = 125 °C (per leg) 600 pF Max. Junction Capacitance CT @VR = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 200V


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PDF SHD114436 SHD114436A SHD114436B SHD114436 SHD114436A SHD114436B
2012 - Not Available

Abstract: No abstract text available
Text: Characteristics: Condition Max. Units 0.92 V @ 30A , Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.76 V @ 30A , Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V , Pulse, 0.2 mA TJ = 25 C (per leg) IR2 @VR = 200V , Pulse, 2.0 mA TJ = 125 C (per leg) Max. Junction Capacitance , 200V Schottky devices, some degradation in trr performance at high temperatures should be expected , POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters


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PDF SHD114436 SHD114436A SHD114436B
2003 - SHD114446

Abstract: SHD114446A SHD114446B
Text: , REV. - POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: · Switching Power Supply · , 30A , Pulse, TJ = 25 °C (per leg) measured at the leads 0.76 V VF2 @ 30A , Pulse, TJ = 125 °C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V , Pulse, 0.7 mA TJ = 25 °C (per leg) IR2 @VR = 200V , Pulse, 16 mA TJ = 125 °C (per leg) 600 pF Max. Junction Capacitance CT @VR = 5 V, TC = 25 °C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 200V


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PDF SHD114446 SHD114446A SHD114446B SHD114446 SHD114446A SHD114446B
2012 - Not Available

Abstract: No abstract text available
Text: Characteristics: Condition Max. Units 0.92 V @ 30A , Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.76 V @ 30A , Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 200V , Pulse, 0.7 mA TJ = 25 C (per leg) IR2 @VR = 200V , Pulse, 16 mA TJ = 125 C (per leg) Max. Junction Capacitance CT 600 pF @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 200V , POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters


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PDF SHD114446 SHD114446A SHD114446B
2015 - Not Available

Abstract: No abstract text available
Text: SS32BF THRU SS320BF 星合电子 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 3.0A XINGHE ELECTRONICS SMBF Cathode Band Top View FEATURES 0.145(3.70) 0.137(3.50) • Metal silicon junction, majority , ¼©ï¼£ï¼³ã€€ï¼£ï¼¯ï¼Žï¼Œï¼¬ï¼´ï¼¤ï¼Žã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ã€€ï¼·ï¼·ï¼·ï¼Žï¼³ï¼¤ï¼¤ï¼ºï¼§ï¼Žï¼£ï¼¯ï¼­ SS32BF THRU SS320BF 星合电子 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 3.0A XINGHE ELECTRONICï


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PDF SS32BF SS320BF SS32BF-SS38BF SS310BF-SS320BF
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