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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

200v 1.5v 3a diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 31DF2 diode

Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet 60v 10KHz ir MOSFET ICF-SW77 IGBT 60A spice model LM317 spice
Text: . . - " " . FRD 31DF2 ( 3A 200V ) SBD 31DQ04 ( 3A 40V) 2 . M . . 25 150 3A VF 0.78, 200V IR 4,800 . 31DF2 3A 200V , ,000 5,000 6,700 FRD (PN Diode ) SBD 31DF2 150 VR 1V 10V 50V 100V 200V , FRED (Fast Recovery Epitaxial Diode ) . 10kHz , . 200V SBD SBD FRD JBS , ( ) , N . . , . . 200V 200V . GHz


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PDF 2004/Sept. AC100/ 50/60Hz DC12V 10kHz OD-123 100/W 200/W 270/W 300/W 31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet 60v 10KHz ir MOSFET ICF-SW77 IGBT 60A spice model LM317 spice
2004 - 30V 20A 10KHz power MOSFET

Abstract: IGBT 60A spice model 2MV10 ICF-SW77 smd 1a 100v diode bridge 200v 3A schottky sbd diode S 10EDB20 0.535V diode 3A50
Text: / 200V DC-DC DC12V DC5V DC3.3V DC-DC 50/60Hz 10kHz ATX SBD FRD PNSBD MOSFET SBDPN SBD SBD PN - 31DF2( 3A 200V )FRD31DQ04( 3A 40VSBD 2515031DF2 , FRD()SBD ATX AC-DC FRDSBD AC-DC 50/60Hz10kHz 31DF2 3A 200V FRD 31DQ04 , Hz kHz MHz GHz 200V 200V MOSFET IGBT P N 200V P N 200V Mo 200V N 1 2004.4/2005.8


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PDF AC100/ 0QY03 EP10HY03 EP10LA03 EP10QY03 OD-123 200270/W EP10HA03 30V 20A 10KHz power MOSFET IGBT 60A spice model 2MV10 ICF-SW77 smd 1a 100v diode bridge 200v 3A schottky sbd diode S 10EDB20 0.535V diode 3A50
1999 - 200v 3A IGBT

Abstract: No abstract text available
Text: =25°C Tc =100°C IF=4.0A, VR= 200V Tc =25°C -di/dt=200A/uS Tc =100°C Tc =25°C Tc =100°C Irr Diode , SGP6N60UFD FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic= 3A , ) IF IFM PD Pulsed Collector Current Diode Continuous Forward Current @ Tc = 100°C Diode Maximum , V/°C IC = 3mA , VCE = VGE VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Ic= 3A , VGE = 15V Ic=6A, VGE , Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300V , IC = 3A VGE = 15V RG = 80


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PDF SGP6N60UFD O-220 200v 3A IGBT
1999 - SGW6N60UFD

Abstract: No abstract text available
Text: Voltage : VCE(sat) = 2.1 V (@ Ic= 3A ) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ , IF Diode Continuous Forward Current @ Tc = 100°C 4 A IFM Diode Maximum Forward Current , 100 nA VCE(sat) Collector to Emitter Ic= 3A , VGE = 15V - 2.1 2.6 V , Reverse transfer capacitance - 7 - pF td(on) Turn on delay time VCC = 300V , IC = 3A , nC Qgc Gate-Collector Charge Ic = 3A - 4 6 nC Le Internal Emitter


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PDF SGW6N60UFD SGW6N60UFD
2002 - Not Available

Abstract: No abstract text available
Text: = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation , Thermal Characteristics Symbol RJC(IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case , to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A , VGE = 15V IC = 6A, VGE = 15V 3.5 -4.5 2.1 , 3A , RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A , RG = 80, VGE = 15V


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PDF SGP6N60UFD O-220 SGP6N60UFD SGP6N60UFDTU
2002 - Not Available

Abstract: No abstract text available
Text: = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum , temperature Thermal Characteristics Symbol RJC(IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance , Saturation Voltage IC = 3mA, VCE = VGE IC = 3A , VGE = 15V IC = 6A, VGE = 15V 3.5 -4.5 2.1 2.6 6.5 2.6 -V V V , ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 3A , RG = 80, VGE = 15V


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PDF SGW6N60UFD SGW6N60UFD SGW6N60UFDTM O-263
2001 - Not Available

Abstract: No abstract text available
Text: ) = 2.1 V @ IC = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Application AC , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC( DIODE ) RJA Parameter , ) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A , VGE = 15V , nH VCC = 300 V, IC = 3A , RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A , RG


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PDF SGS6N60UFD O-220F SGS6N60UFD SGS6N60UFDTU
2000 - Q67040-S4340

Abstract: SKA06N60
Text: Anti-Parallel Diode Characteristic trr T j = 25° C, - tS V R = 200V , I F = 6A, - 17 - , tS V R = 200V , I F = 6A, - 27 - tF Diode reverse recovery time di F / dt = 200A , . Typical reverse recovery time as a function of diode current slope (VR = 200V , Tj = 125°C) di F / dt , (VR = 200V , Tj = 125°C) 600A/µs 10A 500A/µs 6A IF = 6A IF = 3A 4A 2A di r r , recovery current as a function of diode current slope (VR = 200V , Tj = 125°C) 150A/µs 250A/µs 350A/µs


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PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Aug-00 Q67040-S4340 SKA06N60
2000 - FAST RECOVERY DIODE 200ns 8A 40V

Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: 200V , I F = 6A, - 17 - tF Diode reverse recovery time di F / dt = 200A/ µ s - , trr T j = 150° C - 290 - tS V R = 200V , I F = 6A, - 27 - tF Diode , IF = 3A 200nC 0nC 50A/µs 150A/µs 250A/µs 350A/µs 450A/µs 550A/µs di F / dt , DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V , Tj = , of diode current slope (VR = 200V , Tj = 125°C) 600A/µs 10A 500A/µs 6A IF = 6A IF =


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PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Apr-00 FAST RECOVERY DIODE 200ns 8A 40V 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
2001 - SGS6N60UFD

Abstract: No abstract text available
Text: , IC = 3A , VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Application AC & DC Motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , , VGE = 0V VGE = VGES, VCE = 0V - - 250 ± 100 µA nA IC = 3mA, VCE = VGE IC = 3A


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PDF SGS6N60UFD O-220F SGS6N60UFD
2000 - SGW6N60UFD

Abstract: No abstract text available
Text: required. · · · · High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 3A High , Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A , VGE = 15V IC = , Internal Emitter Inductance VCC = 300 V, IC = 3A , RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC


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PDF SGW6N60UFD SGW6N60UFD
2002 - SGP6N60UFD

Abstract: No abstract text available
Text: , IC = 3A , VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , VGE = VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A , VGE = 15V


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PDF SGP6N60UFD O-220 95MAX. 54TYP SGP6N60UFD
2002 - 200v 3A ultra fast recovery diode

Abstract: SGP6N60UFD SGP6N60
Text: , IC = 3A , VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , VGE = VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A , VGE = 15V


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PDF SGP6N60UFD O-220 SGP6N60UFD 200v 3A ultra fast recovery diode SGP6N60
2005 - CQ1265RT

Abstract: CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq0565rt cq1265
Text: Inductor 5D-9 BEAD101 BEAD201 Resistor R101 100k BEAD 5uH 3A 0.25 W Diode , R101 100k BEAD 5uH 3A 0.25 W Diode R102 150k 0.25 W D101 1N4937 1A , 220k 0.25 W, 1% D203 EGP30D 3A , 200V R206 5.1k 0.25 W D204 EGP20D 2A , 3A 0.25 W Diode R102 150k 0.25 W D101 1N4937 1A, 600V R103 5.1 0.25 , winding and Vcc winding, respectively, VFo and VFa are the diode forward voltage drops of the output


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PDF FSCQ0565RT FSCQ0765RT FSCQ0965RT FSCQ1265RT FSCQ1465RT FSCQ1565RT FSCQ1565RP 230VAC CQ1265RT CQ0765RT cq1565rt cq1265rt schematic diagram cq0765 CQ0765RT circuit diagram CQ0765R cq0965rt cq0565rt cq1265
2002 - SGW6N60UFD

Abstract: No abstract text available
Text: 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.) Applications AC & DC motor , Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A , VGE = 15V IC = 6A, VGE = 15V , VCC = 300 V, IC = 3A , RG = 80, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 3A , RG =


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PDF SGW6N60UFD SGW6N60UFD
2000 - 200v 3A ultra fast recovery diode

Abstract: SGP6N60UFD
Text: , IC = 3A , VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol , required. · · · · High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 3A High , Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current , (IGBT) RJC( DIODE ) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance , , VGE = 0V VGE = VGES, VCE = 0V - - 250 ± 100 uA nA IC = 3mA, VCE = VGE IC = 3A


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PDF SGP6N60UFD O-220 200v 3A ultra fast recovery diode SGP6N60UFD
2005 - pn junction diode structure

Abstract: "Power Diode" smd 3a MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 LM317 spice IGBT 60A spice model AC DC 60v 10amp 470E-6 capacitor 31DF2 what is THERMAL RUNAWAY IN RECTIFIER MOSFET ferrite transformer power for power supply atx
Text: limit is called rated reverse voltage. For example, as for 200V diode , a reverse voltage GHz , Current flows over 200V . (Nature of diode is lost.) Structure of Diode Diode of VRRM = 200V 1 April, 2004/June, 2005 S. Hashizume higher than 200V forces to lose the diode nature that current , forward and reverse characteristics of both 31DF2 and 31DQ04, which are FRD ( 3A 200V ) and SBD ( 3A 40V , schottky), are becoming more and more 31DF2 3A 200V FRD 31DQ04 3A 40V SBD (Same package 2


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PDF
2007 - K06N60

Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 80nC 40nC , recovery charge as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in , function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 9 Rev , SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C · 75 , EmCon diode · Pb-free lead plating; RoHS compliant 1 · Qualified according to JEDEC for target


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PDF SKP02N60 PG-TO-220-3-1 O-220AB) K06N60 fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
2006 - Not Available

Abstract: No abstract text available
Text: slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) d i F / d t , DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V , Tj = 125 , . Typical reverse recovery current as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test , recovery current as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in , SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode · 75


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PDF SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60
2007 - K06N60

Abstract: SKB02N60 PG-TO-263-3-2
Text: function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 80nC 40nC , recovery charge as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in , function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 9 Rev , SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C · 75 , anti-parallel EmCon diode · Pb-free lead plating; RoHS compliant 1 · Qualified according to JEDEC for target


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PDF SKB02N60 PG-TO-263-ain K06N60 SKB02N60 PG-TO-263-3-2
2000 - fast recovery diode 2a trr 200ns

Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Text: CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V , Tj , reverse recovery charge as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 5A 250A/µs 3A IF = 4A IF = 2A IF = 1A DIODE PEAK RATE OF FALL OF REVERSE , current as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E , a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 9


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PDF SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60 fast recovery diode 2a trr 200ns fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
2006 - Not Available

Abstract: No abstract text available
Text: slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) d i F / d t , DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V , Tj = 125 , . Typical reverse recovery current as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test , recovery current as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in , SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode · 75


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PDF SKP02N60 PG-TO-220-3-1 O-220AB) SKP02N60
2000 - Q67040-S4215

Abstract: SKB02N60 SKP02N60
Text: function of diode current slope (VR = 200V , Tj = 125°C, Dynamic test circuit in Figure E) 4A 200A , . Typical reverse recovery current as a function of diode current slope (VR = 200V , Tj = 125°C, Dynamic , SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode , parallel switching capability · Very soft, fast recovery anti-parallel EmCon diode C G E P-TO , Diode forward current TC = 25°C 6.0 TC = 100°C 2.9 Diode pulsed current, tp limited by


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PDF SKP02N60 SKB02N60 P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) Jul-02 Q67040-S4215 SKB02N60 SKP02N60
2013 - Not Available

Abstract: No abstract text available
Text: reverse recovery time as a function of diode current slope (VR = 200V , Tj = 125C, Dynamic test , (VR = 200V , Tj = 125C, Dynamic test circuit in Figure E) 4A 200A/s IF = 4A 3A IF , SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V , Tj , as a function of diode current slope (VR = 200V , Tj = 125C, Dynamic test circuit in Figure E , Diode C  75% lower Eoff compared to previous generation combined with low conduction losses ï


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PDF SKP02N60 PG-TO-220-3-1 O-220AB)
2013 - Not Available

Abstract: No abstract text available
Text: as a function of diode current slope (VR = 200V , Tj = 125C, Dynamic test circuit in Figure E , diode current slope (VR = 200V , Tj = 125C, Dynamic test circuit in Figure E) 60A/s 100A , fall of reverse recovery current as a function of diode current slope (VR = 200V , Tj = 125ï , Diode C  75% lower Eoff compared to previous generation combined with low conduction losses ï , ‚· Very soft, fast recovery anti-parallel Emitter Controlled Diode  Pb-free lead plating; RoHS


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PDF SKB02N60
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