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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
LT1351CS8#TRPBF LT1351CS8#TRPBF ECAD Model Analog Devices Inc 250µA, 3MHz, 200V/µs Operational Amplifier
LT1351CN8#PBF LT1351CN8#PBF ECAD Model Analog Devices Inc 250µA, 3MHz, 200V/µs Operational Amplifier
LT1351CS8#PBF LT1351CS8#PBF ECAD Model Analog Devices Inc 250µA, 3MHz, 200V/µs Operational Amplifier
LT1351CMS8#TRPBF LT1351CMS8#TRPBF ECAD Model Analog Devices Inc 250µA, 3MHz, 200V/µs Operational Amplifier
LT1351CMS8#PBF LT1351CMS8#PBF ECAD Model Analog Devices Inc 250µA, 3MHz, 200V/µs Operational Amplifier
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OVRTC-200VUS OVR TC 10KA 200 VDC PARALLEL
OVRTC-200VUS ECAD Model
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200V//us Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - TO-252AA Package

Abstract: No abstract text available
Text: ) (ns) setup (IF, diF/dt, VR) 0.90 2 21 2A, 200A/ us , 100V 28 0.95 4 20 3A, 200A/ us , 390V 20 at R.T. 600 1.85 5 21 5A, 200A/ us , 390V 33 at R.T. 200 1.00 3 19 3A, 200A/ us , 160V 60 at R.T. TO-252AA (DPAK) 200 1.2 6 19 3A, 200A/ us , 160V 60 Power Plastic SMD (1)(3)(6) TO-252AA (DPAK) 600 2.10 6 21 6A, 200A/ us , 390V 33 at R.T. VS-6EWX06FNxHM3 Power Plastic SMD (1)(3)(6) TO-252AA (DPAK) 600


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PDF AEC-Q101 O-220, O-262, O-247, VMN-PT0358-1402 TO-252AA Package
2004 - EIAJ ED-4701 B-121

Abstract: 200V 50A mos fet 1N538 ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317
Text: 5A 50A/ µs 25 25 0.88V Max. IR VRRM 25 0 35ns Max. 1 2 600V FRD , 17 5A 100V SBD IFM=5A, -di/dt=50A/ µs 14 5A 200V FRD Ver. 0.2A/DIV. Hor. 5ns/DIV. FSH05A10 IFM=5A, -di/dt=50A/ µs Ver. 0.2A/DIV. Hor. 5ns/DIV. FSF05A20 25 trr 0 25~100 15 5A 40V SBD IFM=5A, -di/dt=50A/ µs Ver. 0.2A/DIV. Hor. 5ns/DIV. FSQ05A04 28 600V FRD , IFM=5A, -di/dt=50A/ µs Ver. 0.2A/DIV. Hor. 5ns/DIV. FSQ05A06 FRD , . 16 17 5A 60V


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PDF 1N538 O-220 O-247 Sn-37Pb 1030s EIAJ ED-4701 B-121 200V 50A mos fet ICF-SW77 31DF2 sony icf FCF10A20 FCH10A15 FSF10A60 LM317
2004 - diode smd ED 74

Abstract: 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
Text: Io 25 200V FRD 5A ×2 VF 5A 25 100 1mA Max. 20µA Max. trr 5A 50A/ µs 25 , Barrier Diode 9 3A 100ns 5A -di/dt=50A/ µs 400ns 100ns 14A - FRD 0 , 0 0 25, 50, 75,100 25 50 17 5A 100V SBD 75 IFM=5A, -di/dt=50A/ µs Ver. 0.2A/DIV. Hor. 5ns/DIV. FSH05A10 100 14 5A 200V FRD IFM=5A, -di/dt=50A/ µs Ver. 0.2A/DIV. Hor. 5ns/DIV , =5A, -di/dt=50A/ µs Ver. 0.2A/DIV. Hor. 5ns/DIV. FSQ05A04 FRD-di/dt 50A/µs185A 200V FRD -di/dtFRDSBD


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PDF O-220 O-247 O-247 aSn-37Pb bSn-37Pb diode smd ED 74 200v dc 10A buck converter 1N538 30dl4 FRD FCF10A20 12v 50w smps smps 10w 12V FRD 31DF2 EIAJ ED-4701 B-121 VFIR
2005 - irfp250 applications

Abstract: IRFP250 IRUD400CW60
Text: Time 4730 ns - If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C A If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C nC If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ , 100 200 300 400 500 dif/ dt - (A/ µs ) Fig. 5 - Typical Reverse Recovery Time vs. dif , 200 300 400 500 0 100 200 300 400 500 dif/ dt - (A/ µs ) Fig. 6 - Typical


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PDF PD-21047 IRUD400CW60 Rating0CW60 O-244 irfp250 applications IRFP250 IRUD400CW60
200V transistor npn 10a

Abstract: 2N6249 2N6250 2N6251 200v 10a npn transistor
Text: 2.5 mJ - us - us 2.0 us - us - us 3.5 us - us - us 1.0 us Central Semiconductor Corp. 145


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PDF 2N6249 2N6250 2N6251 2N6249, 2N6250, 2N6251 200Vf 2N6249 2N6250 200V transistor npn 10a 200v 10a npn transistor
IGBT 200V 50A

Abstract: No abstract text available
Text: 200V, IF = 25A, di/dt=200A/ µs Peak Reverse Recovery Current Qrr Peak Reverse Recovery Current , °C, VR = 200V, IF = 25A, di/dt=200A/ µs A TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/ µs TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/ µs nC 14 18a, 18d 15 18a, 18d TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/ µs TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/ µs 16 18a, 18d A/ µs TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/ µs TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/ µs


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PDF IRG4PC50SDPbF O-247AC IGBT 200V 50A
2007 - SMX-1

Abstract: No abstract text available
Text: SMPS Stacked MLC Capacitors SMX Style for High Temperature Applications up to 200ºC U.S . Preferred Styles SMX-style, stacked Switch Mode Power Supply Capacitors (SMPS) utilizing Multilayer , +125°C +15% - 56%, -55ºC to +200°C U.S . Preferred Styles Capacitance Test (MIL-STD-202 Method 305) 25 , E U.S . Preferred Styles CHIP SEPARATION 0.254 (0.010) TYP. B A 1.397 (0.055) ±0.254 , U.S . Preferred Styles Max Capacitance (µF) Available Versus Style with Height (A) of 0.120" -


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PDF AN480 AN650 AN650 SMX-1
2007 - IRFP250

Abstract: IRUD400CW60 TO-244
Text: - IRRM Reverse Recovery Time 4730 ns - If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C A If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C nC If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C Thermal - Mechanical Characteristics Parameters Min , Leg) 0 100 200 300 400 500 dif/ dt - (A/ µs ) Fig. 5 - Typical Reverse Recovery Time


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PDF PD-21047 IRUD400CW60 12-Mar-07 IRFP250 IRUD400CW60 TO-244
2001 - ceramic capacitor 4.7 nf 500v

Abstract: 561 1KV CERAMIC CAPACITOR r 151 1kv capacitor 560 nF 200V ceramic capacitor 1,5 nF 1kV ceramic capacitor 6,8 nF 1kV p 5
Text: leaching effect. Please consult us for this application. Unless otherwise prescribed, the temperature , 822 103 123 153 183 223 For higher voltages, please consult us . 6-59 SALES OFFICES: VISIT OUR , , please consult us . 6-61 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex-components.com , (*) top of the range value: 2.5 mm For chips described in tables 2 & 4, please refer to general U.S , packaging (consult us ) chapter R = Radial leads (for S43 and S47 shown on tables 1 & 3 page 6-58 & 6-60


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PDF
2007 - Not Available

Abstract: No abstract text available
Text: SMPS Stacked MLC Capacitors SMX Style for High Temperature Applications up to 200ºC U.S . Preferred Styles SMX-style, stacked Switch Mode Power Supply Capacitors (SMPS) utilizing Multilayer , 200ºC U.S . Preferred Styles ELECTRICAL SPECIFICATIONS Temperature Coefficient C0G: A Temperature , High Temperature Applications up to 200ºC D B U.S . Preferred Styles CHIP SEPARATION 0.254 , U.S . Preferred Styles Max Capacitance (µF) Available Versus Style with Height (A) of 0.120" -


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PDF AN650
1995 - BUV42

Abstract: BB 555 pbas P003N
Text: 0.9 1.1 1.7 2 V V Pulsed: Pulse duration = 300 µs , duty cycle = 2 % 2/5 T yp , 40 35 A/ µs A/ µs BUV42 ELECTRICAL CHARACTERISTICS (continued) Symbo l tr ts tf , 1.6 0.3 µs µs µs ts tf tt tc INDUCT IVE LOAD Storage Time Fall Time Tail Time in , R B2 = 6.3 1.2 0.08 0.03 0.15 1.8 0.2 0.12 0.35 µs µs µs µs ts tf tt tc , 0.7 µs µs µs µs ts tf tt Storage Time Fall Time Tail Time in Turn-on V CC = 200V I


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PDF BUV42 BUV42 BB 555 pbas P003N
BUV42

Abstract: No abstract text available
Text: LOAD Vcc = 200V le =6A 0.3 0.4 (IS ts Rise Time VBB = -5V IBI = 0.75A 1 1.6 US tf Storage Time RB2 = 3.3Q Tp = 30ys 0.15 0.3 US Fall Time INDUCTIVE LOAD ts Storage Time Vcc - 200V Vciamp = 250V 1.2 1.8 us tf Fall Time Ice = 4A lB = 0.4A 0.08 0.2 US tt Tail Time in Turn-on VBB = -5V RB2 = 6.3Q 0.03 0.12 US tc Crossover Time Lc = 2.5m H 0.15 0.35 US ts Storage Time VCC = 200V Vciamp = 250V 1.8 2.4 JIS tl Fall Time Ice = 4A Iß = 0.4A 0.2 0.4 US tt Tail Time in Turn-on VBB =


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PDF BUV42 0DbS335 GDbS33b BUV42
2008 - irf 100v 200A

Abstract: irf 345 irg4pc50sdpbf C-150
Text: =200A/ µs Peak Reverse Recovery Current Qrr Peak Reverse Recovery Current 75 - 4.5 10 , =200A/ µs A TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/ µs TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/ µs nC 14 18a, 18d 15 18a, 18d TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/ µs TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/ µs 16 18a, 18d A/ µs TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/ µs TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/ µs Notes: Repetitive rating: VGE=15V; pulse width


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PDF IRG4PC50SDPbF O-247AC irf 100v 200A irf 345 irg4pc50sdpbf C-150
2007 - Not Available

Abstract: No abstract text available
Text: , dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C A If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C nC If = 200A, dif/dt = 200A/ µs , Vr = 200V If = 200A, dif/dt =200A/ µs , Vr =200V @ TJ = 150°C Thermal - , (A/ µs ) Fig. 5 - Typical Reverse Recovery Time vs. dif /dt (per Leg) 8000 40 If = 200A Vrr , 200 300 400 500 dif/ dt - (A/ µs ) dif/ dt - (A/ µs ) Fig. 6 - Typical Reverse


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PDF PD-21047 IRUD400CW60 08-Mar-07
2001 - ciss 200v

Abstract: IRFE310
Text: part, please contact us . Search Results Part number search for devices beginning "IRF730" , find a suitable part, please contact us . Search Results Part number search for devices beginning , suitable part, please contact us . Search Results Part number search for devices beginning "IRFE120" , , please contact us . Search Results Part number search for devices beginning "IRFE210" Semelab , contact us . Search Results Part number search for devices beginning "IRFE310" Semelab Home


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PDF IRF9140" IRF9140 IRF9140-JQR-B IRF9140SMD IRF9140SMD-JQR-B O276AB) 1400pF ciss 200v IRFE310
2002 - Not Available

Abstract: No abstract text available
Text: ® SP8024/8025/8026 200V/ µs Integrated APC Amplifier with Gain Adjust & Differential Output ADVANCED INFORMATION Slew Rate of 200V/ µs Fast Settling Time - 10ns Gain Switch 2V Output , Block Diagram Rev. 7/25/02 SP8024, 25, 26 200V/ µs Integrated APC Amplifier © Copyright 2002 , % Overshoot, 150 < RGAIN < 1350 -9 60 100 65 20 25 3 dB 2 VCC/2 10 20 2 5 mW V V mV µV/°C mV mV V/ µs ns % MHz dB mA 0.8 2.2 75 V V °C/W Rev. 7/25/02 SP8024, 25, 26 200V/ µs Integrated APC Amplifier


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PDF SP8024/8025/8026 SP8024/25/26 SP8024, SP8025, SP8026
2003 - SP8024

Abstract: SP8025 SP8026 APC temperature schematic
Text: ® SP8024/8025/8026 Advanced 200V/ µs Integrated APC Amplifier with Gain Adjust & Differential Output FEATURES Slew Rate of 200V/ µs Fast Settling Time - 10ns Gain Switch 2V Output , RGCOM 50pF RG2 SP8024, 25, 26 200V/ µs Integrated APC Amplifier 1 © Copyright 2003 Sipex , Package 75 SP8024, 25, 26 200V/ µs Integrated APC Amplifier 2 dB 0.8 Input Voltage Vlow(TTL Level) Vhigh(TTL Level) Rev. 6/02/03 mV V/ µs V V °C/W © Copyright 2003 Sipex


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PDF SP8024/8025/8026 SP8024/25/26 SP8024, SP8025, SP8026 SP8024 SP8025 APC temperature schematic
PBA600F-48

Abstract: No abstract text available
Text: required.Consult us for details. PBA/PBW-16 *5 Please contact us about safety approvals for the model with option. *6 Please contact us about class C. * A sound may occur from power supply at pulse loading , is please contact us for details. PBA/PBW-18 *5 *6 *7 * Derating is required.Consult us for details. Please contact us about safety approvals for the model with option. Please contact us , protection circuit is please contact us for details. Derating is required.Consult us for details. Please


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PDF PBA300F NAC-06-472 PBA300F-3R3 PBA300F-5 PBA/PBW-25 PBA600F-48
BUW52

Abstract: transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
Text: Collector Current Vcc = 200V Rc=0 Ibi=1.2A Tj = 25°C See fig. 2 T, = 100°C 30 25 70 60 A/ns A/|.is VcE(2. us , =- 5V Ibi=1.5A Rb2 = 1 7£2 tp = 30|is See fig. 1 0.3 1 0.15 0.6 1.6 0.3 MS us us INDUCTIVE LOAD , 1.2 0.08 0.03 0.15 1.8 0.2 0.12 0.35 |is us us |is ts tf tt to Storage Time Fall Time Tail Time in , °C See fig. 3 1.8 0.2 0.08 0.35 2.4 0.4 0.2 0.7 |is us |is us ts tf tt Storage Time Fall Time Tail Time , 0.5 0.15 us MS MS ts tf tt Storage Time Fall Time Tall Time in Turn-on Vcc = 200V Vciamp = 250V lc


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PDF BUW52 O-218 BUW52 transistor st z7 S877 transistor 026a N1010A Scans-007954 LC8a DQ26A
transistor bc 658

Abstract: BUW92 TRANSISTOR bc 657 LB104 2N210 BUW9
Text: 3.3£i tp = 30ns See fig. 1 0.3 0.4 (IS ts Storage Time 1 1.6 ns tf Fall Time 0.15 0.3 us , 250V lc=4A IB = 0.4A Vbb = - 5V RB2=6.3a Lc = 2.5mH See fig. 3 1.2 1.8 us tf Fall Time 0.08 0.2 US tt Tail Time in Turn-on 0.03 0.12 US to Crossover Time 0.15 0.35 US ts Storage Time Vcc = 200V Vciamp = 250V lc=4A IB = 0.4A VBB =- 5V Rb2 = 6.3S3 Lc = 2.5mH Tj = 100°C See fig. 3 1.8 2.4 US tf Fall Time 0.2 0.4 US tl Tail Time in Turn-on 0.08 0.2 US tc Crossover Time 0.4 0.7 US ts


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PDF T-33-Ã BUW92 O-218 transistor bc 658 BUW92 TRANSISTOR bc 657 LB104 2N210 BUW9
2006 - Not Available

Abstract: No abstract text available
Text: SMPS Stacked MLC Capacitors (SM9 Style) Technical Information on SMPS Capacitors U.S . Preferred Styles ELECTRICAL SPECIFICATIONS Temperature Coefficient C0G: A Temperature Coefficient - 0 ±30 ppm/°C, -55° to +125°C X7R: C Temperature Coefficient - ±15%, -55° to +125°C Z5U: E Temperature , Encapsulated in DAP (Diallyl Phthalate) Case (SM9 Style) U.S . Preferred Styles D E 0.381 (0.015 , (SM9 Style) U.S . Preferred Styles Max Capacitance (µF) Available Versus Style with Height of


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PDF MIL-STD-202 2N800 AN800
2001 - 2N6801LCC6

Abstract: No abstract text available
Text: part, please contact us . Search Results Part number search for devices beginning "2N6802" , suitable part, please contact us . Search Results Part number search for devices beginning "2N7218" , suitable part, please contact us . Search Results Part number search for devices beginning "2N7219" , part, please contact us . Search Results Part number search for devices beginning "2N7225" , part, please contact us . Search Results Part number search for devices beginning "2N7227"


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PDF 2N6801" 2N6801 2N6801LCC4 2N6801LCC4-JQR-B 2N6801LCC6 2N6801LCC6-JQR-B 2N6801SMD 2N6801SMD-JQR-B O276AB)
2005 - AN-270

Abstract: z5u 0.005
Text: 20 seconds) U.S . Preferred Styles Typical ESR (m) 24 µF Performance ESR ESR ESR ESR ESR ESR @ @ , U.S . Preferred Styles Maximum Height (see table) 0.381 (0.015) ±0.127 (0.005) 6.35 (0.250 , AN270 50V 100V 200V 500V SM96 _ _ _ _ _ _ AN270 50V 100V 200V 500V U.S . Preferred Styles C0G X7R


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PDF MIL-STD-202 AN800 AN-270 z5u 0.005
2007 - AN-270

Abstract: "AN660"
Text: 20 seconds) U.S . Preferred Styles Typical ESR Performance (m) ESR @ 10KHz ESR @ 50KHz ESR @ , Stacked MLC Capacitors Encapsulated in DAP (Diallyl Phthalate) Case (SM9 Style) D E U.S . Preferred , 200V 500V SM96 _ _ _ _ _ _ AN270 50V 100V 200V 500V U.S . Preferred Styles C0G X7R Z5U 1.0 27


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PDF MIL-STD-202 AN800 AN-270 "AN660"
2007 - Not Available

Abstract: No abstract text available
Text: SMPS Stacked MLC Capacitors (SM9 Style) Technical Information on SMPS Capacitors U.S . Preferred Styles ELECTRICAL SPECIFICATIONS Temperature Coefficient C0G: A Temperature Coefficient - 0 ±30 ppm/°C, -55° to +125°C X7R: C Temperature Coefficient - ±15%, -55° to +125°C Z5U: E Temperature , Phthalate) Case (SM9 Style) U.S . Preferred Styles D E 0.381 (0.015) ±0.127 (0.005) Maximum , 27 SMPS Stacked MLC Capacitors Encapsulated in DAP (Diallyl Phthalate) Case (SM9 Style) U.S


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PDF MIL-STD-202 2N800 AN800
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