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Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

200 Amp mosfet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
AN-7016

Abstract: AN7016 200 Amp mosfet single phase to three phase using mosfet 50 Amp 100 volt mosfet FDZ5047N FDZ7064S
Text: pivotal point for a successful 40 amp per phase design is the selection of the right MOSFET for the , LS MOSFET to avoid any shoot through possibilities Figure 7. Four phase 160 Amp VRM. Figure 7 , constitute the background of this paper. On the top a 5 phase 200 Amp module complete with the PWM , ranging from 40 Amp to 200 Amp or more. The single 40 Amp module offers a very unique approach to solve , temperature. The current density is about 50 Amp /inch2. Figure 9. Complete 200 Amp implementation. One 160


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PDF AN-7016 AN00007016 AN-7016 AN7016 200 Amp mosfet single phase to three phase using mosfet 50 Amp 100 volt mosfet FDZ5047N FDZ7064S
2003 - 00941

Abstract: BF1205
Text: analog television tuners and professional communications equipment. 6 5 s d (b) 4 AMP a AMP b DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers , N-channel dual gate MOS-FET BF1205 MGS359 250 Ptot handbook, halfpage (mW) 200 150 , gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 · Two low noise gain


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PDF MBD128 BF1205 OT363 SCA75 R77/01/pp24 00941 BF1205
RD1004

Abstract: 2SC5707 2sK4096 ECH81 2SK4101 rd1004ls tf252th SFT1443 RD2006 vf10bm3
Text: max IF=IR=100mA, [ns] SOD-323 MCPH3 800 800 200 200 4 4 3 3 55 55 MOSFET , 200 500 200 560 200 560 300 600 200 560 Q1: Current Balance SW( MOSFET ) Number of LED , / "" MOSFET IPD* P02 LAN/ P35 P35 /TV P36 P39 P40 FM P40 P41 , IC (PM IC) Li-ion Li-ion [GSM, UMTS] MOSFET (Pch) + (or MOSFET (Pch) USB IF P16 , 0.45 0.62 0.52 [CDMA2000] (PNP) + MOSFET (Pch) /Ta=25 Block Q1 Q2 Q1+Q2 2


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PDF CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 2SK4101 rd1004ls tf252th SFT1443 RD2006 vf10bm3
2005 - transistor array high frequency

Abstract: hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203
Text: Impedance, 10mV Offset Voltage Drift Op Amp , BiMOS, MOSFET Inputs, CMOS Outputs, 15MHz Op Amp , BiMOS, MOSFET , , Unity Gain Stable, Low Noise Op Amp , Quad 8MHz, Unity Gain Stable, Low Noise Op Amp , BiMOS, MOSFET , 8 Ld Can, 8 Ld CerDIP 14 Ld CerDIP, 14 Ld PDIP 8 Ld SOIC 8 Ld SOIC CA3140A Op Amp , BiMOS, MOSFET Inputs, Bipolar Outputs, 4.5MHz, Improved Input Characteristics CA3240 Op Amp , BiMOS, Dual, MOSFET Inputs , 100 100 95 90 95 80 80 90 90 90 90 95 84 84 CA3240A Op Amp , BiMOS, Dual, MOSFET Inputs, Bipolar


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PDF 500MHz 100MHz 10MHz HA-4900 HA-4902 HA-4905 150nA, 200nA, 180ns transistor array high frequency hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203
1998 - Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: switching applications, by using MOSFET bootstrap techniques, they can be used for high-side load control , Crystal oscillator effective to 150MHz · 102dB if IF amp /limiter gain · 25MHz limiter small signal , MOSFET BSN10 Applications


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PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
2001 - 12 VOLT 2 AMP smps

Abstract: smps 12 volt 3 amp 5 VOLT 20 AMP smps 600 VOLT 6 AMP smps 60 amp 600 Volt Diode 12 VOLT 100 AMP smps 10 amp diode rectifiers 15 Amp 100 volt mosfet 12 VOLT 10 AMP smps 12 volt 4 amp smps
Text: (dV/dt). 600 volt ZERO RECOVERY Schottky diodes with current ratings of 6 and 10 amp were tested , . The pulse width was adjusted to set the diode current to 6 amps for the 6 amp devices and 10 amps for the 10 amp devices. The voltage was set to 480 volts in both cases. Figure 2 is the pulse generated during 10 amp device testing. This voltage waveform is expanded in Figure 3 and Figure 4 showing , rate. Ten of the 10 amp diode and ten of the 6 amp diode were tested. Conclusion A total of


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PDF CPWR-RS01, RS904 12 VOLT 2 AMP smps smps 12 volt 3 amp 5 VOLT 20 AMP smps 600 VOLT 6 AMP smps 60 amp 600 Volt Diode 12 VOLT 100 AMP smps 10 amp diode rectifiers 15 Amp 100 volt mosfet 12 VOLT 10 AMP smps 12 volt 4 amp smps
2003 - transistor 341 20P

Abstract: marking sot363 20p dual-gate uhf vhf amplifier UHF Dual Gate BF1206 marking code 5 marking 865 amplifier FET Spec sheet FET marking codes
Text: MOS-FET BF1206 MLE257 200 handbook, halfpage Ptot (mW) 150 100 50 0 0 50 , dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 · Two low noise gain , 6 5 g2 g1 (a) 4 DESCRIPTION AMP a The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are


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PDF MBD128 BF1206 OT363 SCA75 20p/01/pp21 transistor 341 20P marking sot363 20p dual-gate uhf vhf amplifier UHF Dual Gate BF1206 marking code 5 marking 865 amplifier FET Spec sheet FET marking codes
2008 - 200 Amp bridge mosfet

Abstract: circuit using irf640 AD7794 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
Text: voltage MOSFET is used, like the IRF640, which has a 200 V absolute maximum rating, then this circuit , . Rev. 0 | Page 1 of 4 AN-968 Application Note LOW CURRENT-OP AMP APPLICATION A discrete option for a current source is an op amp driven circuit is shown in Figure 3. The AD8610 op amp is a relatively high current drive op amp , driven from ±12 V. 10pF 2k VIN There are many other ADCs with , sources are available. Both current sources are 200 A and can be controlled in a similar manner to the


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PDF AN-968 AD7794/AD7795 AD7794 AN07488-0-10/08 200 Amp bridge mosfet circuit using irf640 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
2000 - 9033 transistor

Abstract: BF1203
Text: gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 , ) 4 DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with , encapsulated in a SOT363 micro-miniature plastic package. AMP a 1 2 AMP b 3 Top view g1 , REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless


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PDF MBD128 BF1203 OT363 613512/02/pp20 9033 transistor BF1203
2010 - marking code L2

Abstract: BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor
Text: gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 , is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads , micro-miniature plastic package. AMP a 1 2 AMP b 3 Top view g1 (a) g2 d (a , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified VDS


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PDF MBD128 BF1203 OT363 R77/03/pp20 marking code L2 BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor
2001 - BF1203

Abstract: FET MARKING CODE 8203 dual mosfet
Text: gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 , ) 4 DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with , encapsulated in a SOT363 micro-miniature plastic package. AMP a 1 2 AMP b 3 Top view g1 , REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless


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PDF MBD128 BF1203 OT363 613512/03/pp20 BF1203 FET MARKING CODE 8203 dual mosfet
2010 - BF1203,115

Abstract: BF1203
Text: MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363  Two , is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads , micro-miniature plastic package. AMP a 1 2 AMP b 3 Top view g1 (a) g2 d (a , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per MOS-FET unless otherwise specified VDS


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PDF MBD128 BF1203 OT363 R77/03/pp20 BF1203,115 BF1203
2009 - PD168804

Abstract: 2SK2414Z 48-PIN 900 v 9 amp mosfet TO-3
Text: of external Power MOSFET , Shottkey barrier diodes and other external components and MODE pin setting , AMP . Latch LOAD PGND OCP PGND0 Latch 0.33 Rs PGND0 PGND0 MODE Lo , PWM CVDD CCA0 AGND SENSA0 CVDD CVD CCB0 MODE L 22 H MODE MODE Sense AMP . (for Buck mode) MODE MODE Sense AMP . (for Buck mode) SENSA1 Control Circuit CVDD Error AMP . CVDD CCB1 PGND1 MODE OVP LOAD 0.47 F DRVOUT1 CVDD Latch CCA1


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PDF PD168804 PD168804 2SK2414Z 48-PIN 900 v 9 amp mosfet TO-3
2010 - Not Available

Abstract: No abstract text available
Text: ) 4 AMP a AMP b DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET , gate MOS-FET BF1205 MGS359 250 Ptot handbook, halfpage (mW) 200 150 100 50 , MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363  Two low noise gain controlled , MOS-FET BF1205 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per


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PDF MBD128 BF1205 OT363 R77/01/pp25
1990 - 270 VDC CIRCUIT BREAKER

Abstract: DDC SSP
Text: 800 600 MIN. TRIP LIMIT 400 NEVER TRIP 200 145% 110% 0 25 µ s 0.001 15 AMP I 2 T , . Using Power MOSFET switches, these Power Controllers offer low "on" resistance, low voltage drop, high , external to the SSPC. This BIT monitors MOSFET failure and control circuit failure. The SSP-21116 Series , SUPPLY INPUT INTERNAL POWER SUPPLIES VEE1 MOSFET DRIVER, SHORT CIRCUIT CONTROL, STATUS CIRCUIT , Input Parasitic Diode, Continuous Current Per Amp Of Rated Current Output-to Input Parasitic Diode


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PDF SSP-21116 SSP-21116 1-800-DDC-5757 A5976 H-06/00-250 270 VDC CIRCUIT BREAKER DDC SSP
2003 - Power MOSFET SSP

Abstract: sspc DDC SSP SSP-21116 400 AMP 28 VDC CIRCUIT BREAKER 270 VDC CIRCUIT BREAKER SSP 645-2
Text: selected to protect wiring and loads. Using Power MOSFET switches, these Power Controllers offer low "on" resistance, low voltage drop, high "off" impedance, and low power dissipation. Built with Power MOSFET 's and , circuitry as well as circuitry external to the SSPC. This BIT monitors MOSFET failure and control circuit , ISOLATED CONTROL CIRCUIT POWER IN MOSFET DRIVER, LOAD SHORT CIRCUIT CONTROL, STATUS , Output-to Input Parasitic Diode, Continuous Current Per Amp Of Rated Current Power Out Voltage


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PDF SSP-21116 SSP-21116 1-800-DDC-5757 A5976 J-03/03-0 Power MOSFET SSP sspc DDC SSP 400 AMP 28 VDC CIRCUIT BREAKER 270 VDC CIRCUIT BREAKER SSP 645-2
2004 - 100 amp mosfet

Abstract: 1 phase dc motor control with IGBT 50 Amp Mosfet full bridge pwm controller for igbt driver 3 phase IGBT gate driver 1200 igbt Motor soft starter mosfet control motor 200 Amp mosfet 15 Amp 100 volt mosfet igbt motor driver
Text: . A Division of RSM Electron Power, Inc THREE PHASE MOTOR CONTROLLERS IGBT & MOSFET BRIDGES , Ø Ø Ø Ø Ø Ø Ø Ø Ø Includes power stage, non-isolated driver stage and controller stage MOSFET or IGBT Output Stage 40 Amp Average Phase Current with up to 300V Maximum Bus Voltage Internal Precision , Motor Starting Operating temperature ­55o C to +150o C 3-Phase Mosfet & IGBT Bridges Ø Ø Ø Ø Ø Ø Available with or without drivers and opto isolation Mosfet bridges: 30-600V, up to 100A standard and IGBT


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2004 - 200 Amp bridge mosfet

Abstract: 1200 volt mosfet 3 phase IGBT gate driver 1200 IGBT 40 amp 100 volt igbt Motor soft starter 200 Amp mosfet 50 Amp 100 volt mosfet IGBT 50 amp 1200 volt IGBT 250 amp 15 Amp 100 volt mosfet
Text: . A Division of RSM Electron Power, Inc THREE PHASE MOTOR CONTROLLERS IGBT & MOSFET MODULES , Ø Ø Ø Ø Ø Ø Ø Ø Ø Includes power stage, non-isolated driver stage and controller stage MOSFET or IGBT Output Stage 40 Amp Average Phase Current with up to 300V Maximum Bus Voltage Internal Precision , Motor Starting Operating temperature ­55o C to +150o C 3-Phase Mosfet & IGBT Bridges Ø Ø Ø Ø Ø Ø Available with or without drivers and opto isolation Mosfet bridges: 30-600V, up to 100A standard and IGBT


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2010 - 00941

Abstract: dual gate fet BF1205 mosfet handbook
Text: analog television tuners and professional communications equipment. 6 5 s d (b) 4 AMP a AMP b DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers , MOS-FET BF1205 MGS359 250 Ptot handbook, halfpage (mW) 200 150 100 50 0 0 , gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 Two low noise gain


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PDF MBD128 BF1205 OT363 R77/01/pp25 00941 dual gate fet BF1205 mosfet handbook
2000 - KA7525

Abstract: BALLAST controller 8pin st N413N PBP204 KA7525B IRF830 IN4937 IN4148 IN4007GP IN4004
Text: limiting power MOSFET gate drive independent of supply voltage greatly enhance the products practical , power driver capable of driving the gate of a power MOSFET . 8 2 CS Input to the PWM comparator. Current is sensed in the Boost stage Mosfet by a resistor in the source lead. An internal , Error Amp Vm1 (Vm2-Vref) GND 6 2 EA OUT Absolute Maximum Ratings Parameter Symbol , Error Amp , Multiplier and Comparator Input Voltage Vin -0.3 to 6 V Operating Temperature


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PDF KA7525B KA7525B KA7525 BALLAST controller 8pin st N413N PBP204 IRF830 IN4937 IN4148 IN4007GP IN4004
2013 - KS100 triac

Abstract: No abstract text available
Text: to 20 Amp @ 60 VDC, • 10 Amp @ 100VDC or 3 Amps @ 200 VDC Low impedance MOSFET output , €¢ Ratings from 60 to 100 Amp • Low impedance MOSFET output EL Series • Mini-puck SSR • Ratings of 5 & 10 Amp • Low impedance MOSFET output • Ratings up to 100 Amp and up • • â , €¢ Ratings up to 100 Amp • Low impedance MOSFET output Consult website for detailed product , Amp ) wide SSR • Operating Voltage of 280 VAC • Dual MOSFET output 14 Crydom DC Output DIN


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PDF DRSCN05, DRSCN24 KS100 triac
2002 - IN4007GP

Abstract: IN4937 DBT-002 SMPS using IRF830 PBP204 KA7525B KA7525 IRF830 IN4148 IN4004
Text: drive clamps limiting power MOSFET gate drive independent of supply voltage greatly enhance the , to this pin. 4 CS Input of the PWM comparator. Current is sensed in the Boost stage MOSFET , current power driver capable of driving the gate of a power MOSFET . 8 2 INV Inverting input , ~ Vref+1V Vea(-) Vm2 1 INV Error Amp Pin4 Threshold(Vmo) Vm1× (Vm2-Vref) 6 GND 2 , Iclamp ±10 mA Detector Clamping Diodes Idet ±10 mA Error Amp , Multiplier and


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PDF KA7525B KA7525B IN4007GP IN4937 DBT-002 SMPS using IRF830 PBP204 KA7525 IRF830 IN4148 IN4004
1990 - DDC SSP

Abstract: SSP21116-010 sspc sspc ddc
Text: loads. Using Power MOSFET switches, these Power Controllers offer low "on" resistance, low voltage drop , circuitry external to the SSPC. This BIT monitors MOSFET failure and control circuit failure. The SSP , 6,7 +28 Vdc VBIAS SUPPLY INPUT INTERNAL POWER SUPPLIES VEE1 MOSFET DRIVER, SHORT CIRCUIT , Per Amp Of Rated Current Output-to Input Parasitic Diode, Pulsed Current Per Amp Of Rated Current , . * Specified for -55°C to +105°C;increases 0.6%/°C between +105°C and +125°C. Note: Other Amp ratings are


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PDF SSP-21116 SSP-21116 1-800-DDC-5757 A5976 G-04/98-1M DDC SSP SSP21116-010 sspc sspc ddc
400v 20 amp mosfet

Abstract: OM9001SS OM9002SS OM9003SS OM9004SS
Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp , N-Channel MOSFET With Back To Back Zener Gate , Single In Line Hermetic Package • Bi-Lateral Zener Gate Protection • Uncommitted Power MOSFET And , and S Levels DESCRIPTION This series of products feature the latest advanced MOSFET and rectifier in , flyback switching power supplies, motor control choppers, and high energy pulse circuits. The MOSFET gates


OCR Scan
PDF OM9001SS OM9003SS OM9002SS OM9004SS MIL-S-19500, 150DIA- 400v 20 amp mosfet OM9004SS
2001 - D06U20S

Abstract: D10U60S opto d207 200W MOSFET POWER AMP 24V 10A SMPS circuit cross reference circuit diagram of mosfet based smps power supply High Current Voltage Regulator mosfet 7805 LG TV flyback transformer KA5Q1565RT ka5q1265rt
Text: over current latch. This allows the Fairchild Power Switch (FPS) to turn off the MOSFET within 200 ns , highly integrated. It combines a high power MOSFET and control IC into one package and, moreover , MOSFET drain and source, which lowers both the rising slope of the voltage Vds between the MOSFET , diodes when the MOSFET turns off. The shallower slopes reduce the dV/dt switching noise and switching loss, because the MOSFET turns on when Vds, is at a minimum or zero. To comply with regulatory trends


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PDF AN4102 D06U20S D10U60S opto d207 200W MOSFET POWER AMP 24V 10A SMPS circuit cross reference circuit diagram of mosfet based smps power supply High Current Voltage Regulator mosfet 7805 LG TV flyback transformer KA5Q1565RT ka5q1265rt
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