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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
201-000795 Texas Instruments 32 Channel Current-Input 20-bit ADC 64-NFBGA 0 to 70
LMZ12010TZ/NOPB Texas Instruments 10A SIMPLE SWITCHER® Power Module with 20V Maximum Input Voltage 11-PFM -40 to 85
LMR12010XMKX/NOPB Texas Instruments 3V to 20V, 1A Step-Down DC/DC Switching Regulator in SOT-23 6-SOT-23-THIN -40 to 125
HDC2010YPAR Texas Instruments ±2% ultra-low-power, digital humidity sensor with temperature sensor in WCSP 6-DSBGA -40 to 85
ADC12010CIVYX/NOPB Texas Instruments 12-Bit 10MSPS Analog-to-Digital Converter (ADC) 32-LQFP -40 to 85
PTH12010WAS Texas Instruments 1.2 to 5.5 V 12-A, 12-V Input Non-Isolated Wide-Adjust Module 10-Surface Mount Module -40 to 85

2-Jun-2010 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BLF4G08LS-160A

Abstract: J3A080GA4/T0BG1610 SCC2691AC1A28 power+wizard+1.1+fault+codes TJA1050T-CM,11 MARKING S08 NXP TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A PEMB1
Text: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR , Description 12NC 1PS70SB14/DG Schottky diode 934061848115 N M 3 31-Dec-10 30- Jun , N M 3 31-Dec-10 30- Jun -11 1PS70SB84 Standard End of Life. See Replacement Part. 1PS76SB70/DG Schottky diode 934062287115 N M 3 31-Dec-10 30- Jun -11 1PS76SB70 , 3 31-Dec-10 30- Jun -11 1PS79SB40 Standard End of Life. See Replacement Part. 1PS79SB70/DG


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PDF 31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 SCC2691AC1A28 power+wizard+1.1+fault+codes TJA1050T-CM,11 MARKING S08 NXP TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A PEMB1
ddr3 pinout

Abstract: wrs4 MR1121
Text: 1 High Performance, Integrated Memory Module Product Jun 08, 2010 LDS-L9D340G64BG2-B , www.logicdevices.com 2 6-6-6 High Performance, Integrated Memory Module Product Jun 08, 2010 , , Integrated Memory Module Product Jun 08, 2010 LDS-L9D340G64BG2-B PRELIMINARY INFORMATION L9D340G64BG2 , Memory Module Product Jun 08, 2010 LDS-L9D340G64BG2-B PRELIMINARY INFORMATION L9D340G64BG2 4.0 , , Integrated Memory Module Product Jun 08, 2010 LDS-L9D340G64BG2-B PRELIMINARY INFORMATION L9D340G64BG2


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PDF L9D340G64BG2 DDR3-1333 DDR3-1066 DDR3-800 LDS-L9D340G64BG2-B ddr3 pinout wrs4 MR1121
2010 - Not Available

Abstract: No abstract text available
Text: PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ STATUS:Released Printed: Jun 10, 2010 . PDM: Rev:BJ


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2011 - Not Available

Abstract: No abstract text available
Text: :Released Printed: Jun 24, 2011 Terran Huang Terran Huang Pei-Ming Zheng 2010 /07/08 2011/06/24 2011 , Printed: Jun 24, 2011 Terran Huang Terran Huang Pei-Ming Zheng 2010 /07/08 2011/06/24 2011/06/24 , : Rev :AT STATUS:Released Printed: Jun 24, 2011 Terran Huang Terran Huang Pei-Ming Zheng 2010 /07 , :Released Printed: Jun 24, 2011 Terran Huang Terran Huang Pei-Ming Zheng 2010 /07/08 2011/06/24 2011 , Terran Huang Terran Huang Pei-Ming Zheng 2010 /07/08 2011/06/24 2011/06/24 ELX-DG


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PDF ELX-DG-004179-1 ELX-D04179-1
2010 - Not Available

Abstract: No abstract text available
Text: Copyright © 2010 , Everlight All Rights Reserved. Release Date : 27- Jun -2013. Issue No: DSE-0002212 Rev , © 2010 , Everlight All Rights Reserved. Release Date : 27- Jun -2013. Issue No: DSE-0002212 Rev , Copyright © 2010 , Everlight All Rights Reserved. Release Date : 27- Jun -2013. Issue No: DSE-0002212 Rev , mentioned is ±0.1mm ,Unit = mm 9 Copyright © 2010 , Everlight All Rights Reserved. Release Date : 27- Jun , Label Copyright © 2010 , Everlight All Rights Reserved. Release Date : 27- Jun -2013. Issue No: DSE


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PDF 19-218/T1D-CQ2R2TY/3T 27-Jun-2013. DSE-0002212
2010 - Not Available

Abstract: No abstract text available
Text: -92S-3 SOT-23-3 Figure 1. Package Types of AH921 Jun . 2010 Rev. 1. 0 1 BCD Semiconductor , Name VCC GND OUT Supply voltage Ground pin Output pin Function Jun . 2010 Rev. 1. 0 2 BCD , Max 24 125 Unit V ºC Jun . 2010 Rev. 1. 0 4 BCD Semiconductor Manufacturing Limited , 40 -5 Unit Gauss Gauss Gauss Figure 4. Magnetic Flux Density of AH921 Jun . 2010 Rev. 1 , High High Low Table 1. Output Status vs. Magnetic Pole Jun . 2010 Rev. 1. 0 6 BCD


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PDF AH921 O-92S-3
Not Available

Abstract: No abstract text available
Text: PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:K STATUS:Released Printed: Jun 07, 2010 . -


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2010 - Not Available

Abstract: No abstract text available
Text: Copyright © 2010 , Everlight All Rights Reserved. Release Date : 28- Jun .2013. Issue No: DSE-0002500 Rev , Color Blue 2 Copyright © 2010 , Everlight All Rights Reserved. Release Date : 28- Jun , Intensity: ±11% 5 Copyright © 2010 , Everlight All Rights Reserved. Release Date : 28- Jun -2013. Issue , © 2010 , Everlight All Rights Reserved. Release Date : 28- Jun -2013. Issue No: DSE-0002500 Rev , Reflow Soldering : 260 ℃ for 10 sec. Hand Soldering : 350 ℃ for 3 sec. Copyright © 2010


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PDF 19-137/R6GHBHC-A01/2T 28-Jun-2013. DSE-0002500
G6G 6 pin ic

Abstract: No abstract text available
Text: R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 DESCRIPTION The PG2411T7C is a GaAs MMIC SPDT (Single Pole Double , . Industry-standard ESD precautions must be employed at all times. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page , with actual board of your system. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 3 of 9 , .1.00 Jun 17, 2010 Page 4 of 9 PG2411T7C TYPICAL CHARACTERISTICS (TA = +25C, Vcont (H) = 3.0 , ) Remark The graphs indicate nominal characteristics. R09DS0004EJ0100 Rev.1.00 Jun 17, 2010 Page 5


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PDF PG2411T7C R09DS0004EJ0100 PG2411T7C R09DS0004EJ0100 G6G 6 pin ic
2012 - Not Available

Abstract: No abstract text available
Text: STATUS:Released Printed: Jun 06, 2012 Terran Huang Andy Lu Tian-Zhao Lin Pei-Ming Zheng 2010 /07/08 , : Jun 06, 2012 Terran Huang Andy Lu Tian-Zhao Lin Pei-Ming Zheng 2010 /07/08 2012/05/25 2012/06/05 , STATUS:Released Printed: Jun 06, 2012 Terran Huang Andy Lu Tian-Zhao Lin Pei-Ming Zheng 2010 /07/08 , : Jun 06, 2012 Terran Huang Andy Lu Tian-Zhao Lin Pei-Ming Zheng 2010 /07/08 2012/05/25 2012/06/05 , Terran Huang Andy Lu Tian-Zhao Lin Pei-Ming Zheng 2010 /07/08 2012/05/25 2012/06/05 2012/06/06


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PDF ELX-DG-011742-1
2010 - Not Available

Abstract: No abstract text available
Text: PART NUMBER: ± 2g Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010 , NUMBER: ± 2g Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010 , . 1 Jun-2010 Product Specifications Table 1. Mechanical (specifications are for operation at , Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010 2. Factory programmable to , NUMBER: ± 2g Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010


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PDF KXTC9-2050 Jun-2010 KXTC9-2050
2010 - NT5DS16M16DS-6K

Abstract: NT5DS16M16DS
Text: 1.1 Jun . 2010 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All rights reserved. NANYA TECHNOLOGY CORP , included in this data sheet are for the DLL Enabled mode of operation. 2 REV 1.1 Jun . 2010 , 166 2.5-3-3 3-3-3 2.5-3-3 3 REV 1.1 Jun . 2010 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All , ); VDD=VDDQ=2.6V±0.1V (-5T/-5TI/-4C) 5 REV 1.1 Jun . 2010 CONSUMER DRAM © NANYA TECHNOLOGY CORP. All , DDR SDRAM Block Diagram (16Mb x 16) 7 REV 1.1 Jun . 2010 CONSUMER DRAM © NANYA TECHNOLOGY


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PDF NT5DS32M8DS NT5DS16M16DS 256Mb DDR-333 DDR400 DDR500 DDR-333) DDR-400/500) NT5DS16M16DS-6K NT5DS16M16DS
2010 - Not Available

Abstract: No abstract text available
Text: PART NUMBER: ± 2g Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010 , : ± 2g Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010 Functional , NUMBER: ± 2g Tri-axis Analog Accelerometer Specifications KXTC9-2050 Rev. 1 Jun-2010 Product , -2050 Rev. 1 Jun-2010 2. Factory programmable to have a switched capacitor low pass filter at 2kHz, 1kHz , -2050 Rev. 1 Jun-2010 Application Schematic 10 1 9 2 Vdd 8 C1 KXTC9 ST Z C4


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PDF KXTC9-2050 Jun-2010 KXTC9-2050
2010 - Not Available

Abstract: No abstract text available
Text: Dominant Wavelength: ±1nm 3 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun , ±0.1mm. Unit = mm 5 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun .21 .2013. , © 2010 , Everlight All Rights Reserved. Release Date : Jun .21 .2013. Issue No: DSE-0008849 Rev , , switch and symbol. ․General use. 1 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun .21 .2013. Issue No: DSE-0008849 Rev.5 www.everlight.com DATASHEET SMD  REFLECTOR


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PDF 25-21/GHC-YSU/2A DSE-0008849
2010 - Not Available

Abstract: No abstract text available
Text: PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:U STATUS:Released Printed: Jun 28, 2010 . FCI


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2009 - Not Available

Abstract: No abstract text available
Text: PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . PDM: Rev:H STATUS:Released Printed: Jun 28, 2010 . FCI


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Not Available

Abstract: No abstract text available
Text: PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . PDM: Rev:N STATUS:Released Printed: Jun 07, 2010 . FCI


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2010 - 2.8V Fixed Positive LDO Regulator

Abstract: S8-A marking marking N4 marking L8C VS Semiconductor marking
Text: Types of AP2402 Jun . 2010 Rev. 1. 5 1 BCD Semiconductor Manufacturing Limited Data Sheet DUAL , Jun . 2010 Rev. 1. 5 2 BCD Semiconductor Manufacturing Limited Data Sheet DUAL 300mA LDO , 3. Functional Block Diagram of AP2402 Jun . 2010 Rev. 1. 5 3 BCD Semiconductor Manufacturing , RoHS compliant. Products with "G1" suffix are available in green packages. Jun . 2010 Rev. 1. 5 4 , 6 85 Unit V o C Jun . 2010 Rev. 1. 5 5 BCD Semiconductor Manufacturing Limited Data


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PDF 300mA AP2402 2.8V Fixed Positive LDO Regulator S8-A marking marking N4 marking L8C VS Semiconductor marking
Not Available

Abstract: No abstract text available
Text: (6.4x10.1mm) (0.65mm ball pitch) Publication Date : Jun . 2010 Revision : 1.5 1/32 M52D16161A (2J , be left No Connection on the device. Publication Date : Jun . 2010 Revision : 1.5 2/32 , Elite Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.5 3/32 , time during tCC(min). Elite Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 , exit. Elite Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.5 5


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PDF M52D16161A 16Bit M52D16161A
2010 - LTP70N06P

Abstract: LTP*70n06p POWER MOSFET Rise Time N-CHANNEL 60V
Text: by safe operating area b. Starting Tj=25, ID=30A, VDD=37.5V mJ /W /W Rev 0. Jun . 2010 01 , Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Rev 0. Jun . 2010 02 LTP70N06P N-Channel 60V Power MOSFET Rev 0. Jun . 2010 03 LTP70N06P N-Channel 60V Power MOSFET Rev 0. Jun . 2010 04 LTP70N06P N-Channel 60V Power MOSFET Rev 0. Jun . 2010 05 LTP70N06P N-Channel 60V Power MOSFET Test Circuit and Waveform Rev 0. Jun . 2010 06 LTP70N06P N-Channel 60V Power MOSFET


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PDF LTP70N06P 300us, O-220 LTP70N06P LTP*70n06p POWER MOSFET Rise Time N-CHANNEL 60V
2010 - Not Available

Abstract: No abstract text available
Text: . ․General use. 1 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun .16.2014. Issue , Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun .16.2014. Issue No: DSE-0008848 Rev , R6 3 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun .16.2014. Issue No , mentioned ±0.1mm. Unit = mm 6 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun , mentioned is ±0.1mm ,Unit = mm 7 Copyright © 2010 , Everlight All Rights Reserved. Release Date : Jun


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PDF 23-23B/R6GHBHC-A01/2A 23-23B DSE-0008848
2010 - Mobile SDRAM

Abstract: M52D32162A
Text: Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.9 1/32 ESMT FUNCTIONAL , Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.9 2/32 ESMT ABSOLUTE MAXIMUM , Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.9 3/32 ESMT DC , (min). Elite Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.9 4 , Technology Inc. Publication Date : Jun . 2010 Revision : 1.9 5/32 ESMT AC CHARACTERISTICS (AC


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PDF M52D32162A 16Bit M52D32162A Mobile SDRAM
2010 - MX29LV320EBTI-70G

Abstract: MX29LV320EBTI MX29LV320ETTI-70G MX29LV320E MX29LV320EBXBI-70G MX29LV320EB MX29LV320ETMI-70G MX29LV320ETT MX29LV320ETXBI-70G MX29LV320ETTI
Text: MX29LV320E T/B MX29LV320E T/B DATASHEET P/N:PM1575 REV. 1.1, JUN . 14, 2010 1 , . 21 P/N:PM1575 REV. 1.1, JUN . 14, 2010 2 MX29LV320E T/B COMMAND OPERATIONS , . 43 P/N:PM1575 REV. 1.1, JUN . 14, 2010 3 MX29LV320E T/B Figure 8. ERASE SUSPEND/RESUME , . 67 P/N:PM1575 REV. 1.1, JUN . 14, 2010 4 MX29LV320E T/B 32M-BIT [4M x 8 / 2M x 16] 3V , pin - Provides accelerated program capability P/N:PM1575 REV. 1.1, JUN . 14, 2010 5


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PDF MX29LV320E PM1575 MX29LV320EBTI-70G MX29LV320EBTI MX29LV320ETTI-70G MX29LV320EBXBI-70G MX29LV320EB MX29LV320ETMI-70G MX29LV320ETT MX29LV320ETXBI-70G MX29LV320ETTI
2012 - Not Available

Abstract: No abstract text available
Text: . 13 -1- Publication Release Date: Jun . 25, 2010 Revision A01 W9864G6JB 9.3 9.4 9.5 10.1 , . 43 -2- Publication Release Date: Jun . 25, 2010 Revision A01 W9864G6JB 1. GENERAL , =0.65mm, using Lead free materials with RoHS compliant -3- Publication Release Date: Jun . 25, 2010 Revision , NC NC CKE A11 A8 A6 VSS CAS# CS# BS0 A10 A1 VDD -4- Publication Release Date: Jun . 25, 2010 , noise buffer immunity. No Connection No connection -5- Publication Release Date: Jun . 25, 2010


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PDF W9864G6JB
2010 - Mobile SDRAM

Abstract: BGA-60 M52D16161A-10TG2J
Text: Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.5 1/32 ESMT FUNCTIONAL BLOCK , Elite Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision : 1.5 2/32 ESMT , Unit pF pF pF pF Elite Semiconductor Memory Technology Inc. Publication Date : Jun . 2010 Revision , : Jun . 2010 Revision : 1.5 4/32 ESMT AC OPERATING TEST CONDITIONS (VDD = 1.8V ± 0.1V, TA = 0 °C , Technology Inc. Publication Date : Jun . 2010 Revision : 1.5 5/32 ESMT AC CHARACTERISTICS (AC


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PDF M52D16161A 16Bit M52D16161A Mobile SDRAM BGA-60 M52D16161A-10TG2J
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