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2-18GH Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - 60Ghz

Abstract: MGF0915A a4013
Text: No file text available


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PDF MGF0915A MGF0915A 23dBm 50pcs) 60Ghz a4013
2004 - Eudyna Packaging

Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) · High Associated Gain: 13.0dB (Typ.)@f=12GHz · Lg 0.15µm, Wg = 200µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Packaging Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are packaged


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz Eudyna Packaging
CHA3218-99F

Abstract: No abstract text available
Text: CHA3218-99F RoHS COMPLIANT 2-18GHz Low Noise Amplifier GaAs Monolithic Microwave IC , Vd1 IN Vd2 OUT Main Features Broadband performances: 2-18GHz Noise figure : 2dB Output , CHA3218-99F 2-18GHz Low Noise Amplifier Electrical Characteristics Tamb.= +25° Vd = +4V C , -99F 2-18GHz Low Noise Amplifier Absolute Maximum Ratings (1) Tamb.= +25° C Symbol Parameter Values , subject to change without notice CHA3218-99F 2-18GHz Low Noise Amplifier Typical on-wafer Sij


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PDF CHA3218-99F 2-18GHz CHA3218-99F 2-18GHz 15dBm DSCHA32181157
2005 - Not Available

Abstract: No abstract text available
Text: CMM1110-BD RNP@s·@QXNP@gh¡@mmic@l·z@n·OETM^@a"­'OEOE^~ mOE"OEY@b~·,.,"L@i"N@QPWYU@r·`'^ @rNL@h·>TMs·"L@t^Y,TM@WWPYY ·" ÐRPPU@mOE"OEY@b~·,.,"L@i"N CELERITEK INC. ADVANCED PRODUCT SPECIFICATIONS PRODUCT DESCRIPTION: 2-18GHz MMIC Low Noise Amp. PRODUCT APPLICATION: PROJECT ENGINEER: Amer Droubi MASK NUMBER: M413-17 PART NUMBER: CMM1110-BD BM NUMBER: TBD REVISION: 02 DATE: 4/6/05 Main Features Unique 2 stage Feedback LNA Fully


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PDF CMM1110-BD 2-18GHz M413-17 CMM1110-BD 12dBm 18GHz
2007 - Not Available

Abstract: No abstract text available
Text: frequency of 2-18GHz and bias current of ± 20mA per diode. ADVANCED: Data Sheets contain information


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PDF MA4SW110 MA4SW210 MA4SW310 50MHz 20GHz 30dBm MA4SW110 MA4SW110,
FHX13LP

Abstract: FHX14LP transistor fhx 35 lp FHX13LG fujitsu hemt FHX13 Z150 FHX*LG low noise hemt transistor low noise hemt
Text: the 2-18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) 2-18GHz FCSI0598M200 FHX13LP FHX14LP transistor fhx 35 lp FHX13LG fujitsu hemt FHX13 Z150 FHX*LG low noise hemt transistor low noise hemt
Not Available

Abstract: No abstract text available
Text: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB (Typ.)@f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability DESCRIPTION The FHX45X is a Super High Electron Mobility Transistor (SuperHEMT™) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well


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PDF FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200
Not Available

Abstract: No abstract text available
Text: Conditions Output Sensitivity (mV/mW) 900 450 f = 2-18GHz P in = -20dBm Maximum Tangential , 1 MHz f = 2-18GHz P in ■-20dBm = f = 2-18GHz P in = -20dBm f = 10GHz -5 5 °C to +100°C P|N = -20dBm Rl = 4 3 0 n f = 2-18GHz P|N = -20dBm f = 2-18GHz P in = -20dBm f = 1KHz f =


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PDF DS3415-1 DC3000 -20dBm -20dBm DC3031/DC3032 DC3041/DC3042 DC3033/DC3034 DC3043/DC3044
2004 - Not Available

Abstract: No abstract text available
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B (Typ.)@f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
1998 - hemt low noise die

Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise


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PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) 12GHz FHX06X 2-18GHz hemt low noise die
1998 - high frequency transistor ga as fet

Abstract: GaAs FET HEMT Chips fujitsu hemt
Text: FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Gate Drain Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu's stringent


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PDF FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt
Not Available

Abstract: No abstract text available
Text: Attenuators SMA Lossy Line Type 2 - 18GHz Performance Specifications: Frequency Range: 2-18GHz 3-18GH z 5-18GH z 6-18GH z Attenuation Values: i-4 d B 5-9dB 10 -iSdB i 6-20 dB Max Deviation from Nominal: + 0.5 dB or 5% whichever is greater Impedance: so Ohms VSWR: 1.25 max Power: 2 Watts average @ +25 °C derated linearly to 0.5 Watts @ +125 °C Peak Power: 5 Kilowatts Operating , 18 GHz 7mm Precision 2 - 18GHz Performance Frequency Range: 2-18GHz 3-18GH z 5-18GH z


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PDF 18GHz 2-18GHz 3-18GH 5-18GH 6-18GH
1999 - FHX04X

Abstract: fujitsu hemt hemt low noise die GaAs FET HEMT Chips FHX06X FHX05X FHX04 FET transistors with s-parameters FUJITSU AU GM 90 562 573
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise


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PDF FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04X fujitsu hemt hemt low noise die GaAs FET HEMT Chips FHX05X FHX04 FET transistors with s-parameters FUJITSU AU GM 90 562 573
1998 - FHX35LP

Abstract: FHX35LG fujitsu hemt
Text: FHX35LG/LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG/LP is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic, hermetically sealed(LG) or


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PDF FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt
15A03

Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz 15A03
Not Available

Abstract: No abstract text available
Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well suited for telecommunication, DBS, TVRO, VSAT or other low


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PDF FHX45X 12GHz FHX45X 2-18GHz
1998 - FHX13LP

Abstract: FHX14lp FHX13LG
Text: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) · High Associated Gain: 13.0dB (Typ.)@f=12GHz · Lg ² 0.15µm, Wg = 200µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Packaging Available DESCRIPTION The FHX13LG/LP, FHX14LG/LP is a Super High Electron Mobility TM Transistor(SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency


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PDF FHX13LG/LP, 14LG/LP 12GHz FHX13) FHX14LG/LP 2-18GHz FCSI0598M200 FHX13LP FHX14lp FHX13LG
TRANSISTOR D1960

Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 FR-2260-UK SPA-X1-400
Text: No file text available


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PDF
Not Available

Abstract: No abstract text available
Text: FEATURES J ■Cascode Configuration MODEL NO. P35-5100-0 teB ■0.25 |im HEMT Technology ■10 dB Gain GaAs MMIC LNA ■<4dB Noise Figure 2-18GHz ■<4.5dB Noise Figure 18-20GHz ■AGC Control With Gate Bias ■-55°C to +85°C Operation ■Temperature Sensing Diode Included On Chip ■Ideal for EW and Test Equipment Applications 2 3 4 5 6 1


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PDF P35-5100-0 2-18GHz 18-20GHz HL04T2D
2-56 unc 2b

Abstract: QQ-S-365
Text: ï 1 REVISIONS ZONE REV. ECO NO. DESCRIPTION ENGINEERING RELEASE DATE SMA FEMALE (FIELD REPLACEABLE) MOUNTING PLATE (OPTIONAL) WITH .104 DIA THRU HOLES (4 PL) — — .18 FREQ: 2-18Ghz LOSS: 3dB ISO: 60dB VSWR: 2:1 SPEED: 10OnS RF PWR: 27dBm DC PWR: +5,-12 or -15v FAR SIDE (4 PL) #2-56 UNC-2B X .12DP (USED TO ATTACH MTG PLATE) NOTES: TRUTH TABLE A 2. MATERIAL: ALUMINUM 6061-T6. 1.1 BODY: PLATED WITH 200-300ulN SILVER PLATE PER QQ-S-365 TYPE II GRADE B. 1.2 COVERS


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PDF 2-18Ghz 10OnS 27dBm 6061-T6. 200-300ulN QQ-S-365 D1/14/0Ã M4T0218 2-56 unc 2b
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated Gain: 10.0dB (Typ.)@f=12GHz · Lg 0.25µm, Wg = 280µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Packaging Available DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. This device is packaged in cost effective, low parasitic


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
power amplifier 2-18GHZ

Abstract: 2-18ghz
Text: CHA2074 2-18GHz Amplifier GaAs Monolithic Microwave IC Description This broadband GaAs , 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 2-18GHz Amplifier , °C/W (1) Vd = +4.0V, Vg = 0V (2) 2-18GHz frequency range (3) 4-18GHz frequency range (4) 18GHz , 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 2-18GHz , change without notice 2-18GHz Amplifier CHA2074 Typical Scattering Parameters Tamb = +25°C, Bias


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PDF CHA2074 2-18GHz 18GHz 13dBm DSCHA20746351 power amplifier 2-18GHZ
hartley oscillator

Abstract: The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 history of varactor diode modern and radar transmitters max2115 hartley oscillator circuit jfet discrete differential transistor hartley
Text: . Cregger, A Family of Four Monolithic VCO MIC's Covering 2-18GHz , Monolithic Circuits Symposium Digest


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PDF MAX2622: MAX2624: MAX2750: MAX2753: MAX2754: MAX2820: MAX2900: com/an1768 hartley oscillator The Modern Armstrong Regenerative Receiver 1GHz vco AR5111 history of varactor diode modern and radar transmitters max2115 hartley oscillator circuit jfet discrete differential transistor hartley
2004 - FHX13LG

Abstract: FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) · High Associated Gain: 13.0dB (Typ.)@f=12GHz · Lg 0.15µm, Wg = 200µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Packaging Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The


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PDF FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13
2006 - Not Available

Abstract: No abstract text available
Text: 2.0-18.0 GHz 0.5W MMIC Amplifier CMM0015-BD August 2006 - Rev 02-Aug-06 ADVANCED PRODUCT SPECIFICATIONS (*) PRODUCT DESCRIPTION: 2-18GHz 0.5W MMIC Amplifier PRODUCT APPLICATION: PROJECT ENGINEER: Issam Khayo MASK NUMBER: M390 (engineering mask) VERSION NUMBER: 2 PART NUMBER: CMM0015-BD BM NUMBER: tbd REVISION: 02 DATE: 07/02/04 Main Features Fully matched Input/output DC block integrated on chip Single bias P1dB>26.5dBm from 2 to 18GHz 10dB Nominal Gain Chip size: 2.37x1.35mm2


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PDF CMM0015-BD 02-Aug-06 2-18GHz 18GHz 35mm2
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