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2-18 GHz Low Noise Gallium Arsenide FET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
AVANTEK oscillator

Abstract: Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
Text: limTbb 0QGb545 ATF-13100, 2-18 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings P , AVANTEK INC 2GE D llMlìbb 0GGb544 T © AVANTEK ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET _ ^ T - 3 > ) - Z S Features · Low Noise Figure: 1.1 dB typical , B at 12 GHz Description Avantek's ATF-13100 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor chip. This device is designed for use in low noise , wideband amplifier and


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PDF 0GGb544 ATF-13100 rel-48 AVANTEK oscillator Avantek rf amplifier Avantek amplifier 140 Avantek atf-1323
avantek

Abstract: Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100 ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
Text: AVANTEK INC 2GE D ■llMlIhb 0GGb544 1 ©AVANTEK ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET ~ 3.J-ZS Features • Low Noise Figure: 1.1 dB typical at 12 GHz • High Associated Gain , Powered by ICminer.com Electronic-Library Service CopyRight 2003 AVANTEK INC ATF-13100, 2-18 GHz Low Noise Gallium Arsenide FET 20E D ■limibb OGGbSMS □ _ T-31-25 Absolute Maximum Ratings Parameter , Avantek's ATF-13100 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor


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PDF 0GGb544 ATF-13100 ATF-13100 recommende63 avantek Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
transistor atf

Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
Text: WiaË H EW LET T mLOÆ PA C K A R D ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET Features · · · Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High , assembling and testing 10 samples per wafer. 7-20 ATF-13100, 2-18 GHz Low Noise Gallium Arsenide FET , performance gallium arsenide Schottky-barrier-gate field effect transistor chip. This device is designed for use in low noise , wideband amplifier and oscillator applications in the 2-18 GHz frequency range. This


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PDF ATF-13100 transistor atf 2-18 GHz Low Noise Gallium Arsenide FET
Not Available

Abstract: No abstract text available
Text: PACKARD oTo r ^ j 0? m 2-18 GHz Low Noise Gallium Arsenide FET Features · · · Low Noise Figure , SÔ 4 O D O T ß T B Ibb H P A blE D ATF-13100, 2-18 GHz Low Noise Gallium Arsenide FET H E W L E , typical Pi at 12 GHz hb Chip Outline Description The ATF-13100 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor chip. This device is designed for use in low noise , wideband amplifier and oscillator applications in the 2-18 GHz frequency range. This GaAs FET device has a


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PDF ATF-13100 passivati68
1997 - ATF-13100

Abstract: ATF-13100-GP3 atf13100 2-18 GHz Low Noise Gallium Arsenide FET
Text: 2­18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features · Low Noise Figure: 1.1 dB Typical at 12 GHz · High Associated Gain: 9.5 dB Typical at 12 GHz · High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise , wideband amplifier and oscillator applications in the 2-18 GHz frequency range. This GaAs FET device has a nominal


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PDF ATF-13100 ATF-13100 proc56 ATF-13100-GP3 atf13100 2-18 GHz Low Noise Gallium Arsenide FET
ATF-26100

Abstract: AT-10600 4sut ATF26100 ATF26100-GP3
Text: PACKARD ATF-26100 (AT-10600) 2-18 GHz General Purpose Gallium Arsenide FET Features · · · Low Noise , 7-61 G *,d B ATF-26100, 2-18 GHz General Purpose Gallium Arsenide FET 4447SÔ4 0Gc î `? , Dissipation23 Channel Temperature Storage Temperature ATF-26100, 2-18 GHz General Purpose Gallium Arsenide , ance gallium arsenide Schottky-barrier-gate field effect transistor chip. This device is designed for use in low noise , wideband am plifier and oscillator applications in the 2 -1 8 G H z frequency range


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PDF 4447SA4 ATF-26100 AT-10600) ATF-26100 AT-10600 4sut ATF26100 ATF26100-GP3
1999 - Not Available

Abstract: No abstract text available
Text: Gallium Arsenide Field Effect Transistors Characteristics The Gallium Arsenide field effect , over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide , microwave region, including high fT, high fMAX, and very low noise figure. GaAs FETs find wide applications , silicon processes is diminishing) both as amplifiers and oscillators, or as low noise amplifiers in applications demanding optimum noise performance. The performance of a GaAs FET is determined primarily by the


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PDF noiseTF-34xxx: ATF-36xxx: ATF-44xxx: ATF-45xxx: ATF-46xxx:
1997 - fet ft 20 GHZ

Abstract: transistor atf ATF-36xxx high power FET transistor s-parameters
Text: Gallium Arsenide Field Effect Transistors Characteristics The Gallium Arsenide field effect , over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide , the microwave region, including high fT, high fMAX, and very low noise figure. GaAs FETs find wide , microwave silicon processes is diminishing) both as amplifiers and oscillators, or as low noise amplifiers in applications demanding optimum noise performance. The performance of a GaAs FET is determined


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PDF ATF-45xxx: ATF-21xxx: ATF-25xx: ATF-44xxx: ATF-46xxx: fet ft 20 GHZ transistor atf ATF-36xxx high power FET transistor s-parameters
ATF-26100

Abstract: 2-18 GHz Low Noise Gallium Arsenide FET
Text: H E W LE T T ft "HÆ PACKARD ¥ h n % ATF-26100 (AT-10600) 2-18 GHz General Purpose Gallium Arsenide FET Features · · · Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB , ATF-26100, 2-18 GHz General Purpose Gallium Arsenide FET Typical Scattering Parameters: Common Source , tin g 10 s a m p le s p e r w a fe r. 7-60 ATF-26100, 2-18 GHz General Purpose Gallium Arsenide , e A T F -2 6 1 0 0 is a high perform ance gallium arsenide Schottky-barrier-gate field effect


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PDF ATF-26100 AT-10600) ATF-26100 2-18 GHz Low Noise Gallium Arsenide FET
Not Available

Abstract: No abstract text available
Text: Gallium A rsenide Field Effect T ransistors The Gallium Arsenide field effect transistor is a , transistor types stem from the intrinsic high mobility of electrons in gallium arsenide . This high mobility , , including high fT, high fM AX, and very low noise figure. GaAs FETs find wide applica tions as the , is diminishing) both as amplifiers and oscillators, or as low noise amplifiers in applications dem anding optimum noise performance. The performance of a GaAs FET is determ ined prim arily by the gate


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PDF ATF-44xxx: ATF-45xxx: ATF-46xxx:
AT8250

Abstract: AT-8250 2-18 GHz Low Noise Gallium Arsenide FET ATF-25170
Text: Service CopyRight 2003 AVANTEK INC ATF-25170, 0.5-10 GHz Low Noise Gallium Arsenide FET EOE D ■UHllhb , AVANTEK INC EOE D imiTbb GODbSbfl 1 ©AVANTEK ATF-25170 (AT-8250) 0.5-10 GHz Low Noise Gallium Arsenide FET Features • Low Noise Figure: 0.8 dB typical at 4 GHz • High Associated Gain: 14.0 dB , low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal , Avantek's ATF-25170 is a high performance gallium arsenide Schottky-barriar-gate field effect transistor


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PDF ATF-25170 AT-8250) ATF-25170 airbrid21 AT8250 AT-8250 2-18 GHz Low Noise Gallium Arsenide FET
ATF13136

Abstract: atf-13136 avantek ATF-13136-TR1 Avantek, Inc 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor Avantek atf-1323
Text: -13136, 2-16 GHz Low Noise Gallium Arsenide FET Absolute Maximum Ratings SOE D ■AVANTEK INC Parameter , AVANTEK INC ©AVANTEK EDE D imnbb OGQbSHb 5 ATF-13136 2-16 GHz Low Noise Gallium Arsenide F ET T-2 \ -ZS Features • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain , stage of low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a , -13136 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost


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PDF ATF-13136 ATF-13136 CA95054 310-371-8717or310-371-8478 ATF13136 avantek ATF-13136-TR1 Avantek, Inc 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor Avantek atf-1323
1997 - Not Available

Abstract: No abstract text available
Text: 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise , Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise , wideband amplifier and oscillator applications in the 2-18 GHz frequency range. This GaAs FET device , -13100 Noise Parameters: VDS = 2.5 V, IDS = 20 mA Γopt Freq. GHz NFO dB Mag Ang RN/50 4.0


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PDF ATF-13100 ATF-13100 5965-8694E
AVANTEK transistor

Abstract: ATF-13136-TR1
Text: A V A N T E K INC EOE D i m m 0GQb54b 2 ©AVANTEK ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features · Low Noise Figure: 1.2 dB typical at 12 GHz · High , Noise Gallium Arsenide FET Absolute Maximum Ratings P ara m ete r Drain-Source Voltage Gate-Source , use in the first stage o f low noise amplifiers operating in the 2-16 GHz frequency range. This GaAs , 's ATF-13136 is a high perform ance gallium arsenide Schottky-barrier-gate field effect transistor housed


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PDF 0GQb54b ATF-13136 AVANTEK transistor ATF-13136-TR1
transistor atf

Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD 2 -1 8 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features · Low N oise Figure: 1.1 dB Typical at 12 GHz · High A ssociated Gain: 9.5 dB Typical at 12 GHz · High Output Power: 17.5 dBm Typical Pj ¿b at 12 GHz This GaAs FET device has a , APPLICATIONS section. Chip Outline Description The ATF-13100 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for vise in low noise , wideband amplifier


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PDF ATF-13100 Outli13 ATF-13100 transistor atf
AT10650-5

Abstract: B717 ATF-26550 AT-10650-5 atf 10650 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK ATF26550 k 246 transistor fet AVANTEK transistor
Text: Purposë " Gallium Arsenide FET T-l.V-2.5 Features • High Associated Gain: 8.0 dB typical at 12 GHz • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • Low Noise Figure: 2.5 dB typical at 12 , . See MEASUREMENTS section for more information. ATF-26550, 2-16 GHz General Purpose Gallium Arsenide , performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in the gain stages of low noise


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PDF ATF-26550 AT-10650-5) ATF-26550 TELBC34-6337 AT10650-5 B717 AT-10650-5 atf 10650 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK ATF26550 k 246 transistor fet AVANTEK transistor
1998 - ATF-25170

Abstract: No abstract text available
Text: 0.5 ­ 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features · Low Noise , , high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate , Package Description The ATF-25170 is a high performance gallium arsenide Schottkybarrier-gate field , Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 4.0 GHz f = 6 0 GHz f = 8.0 GHz f = 4.0 GHz f = 6.0 GHz f


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PDF ATF-25170 ATF-25170 5965-8712E 5966-4978E
AT10650-5

Abstract: No abstract text available
Text: GHz General Purposé " Gallium Arsenide FET -r-^V-2.5 Features · · · · High Associated Gain: 8.0 dB typical at 12 GHz High Output Power: 18.0 dBm typical Pi dB at 12 GHz Low Noise Figure: 2.5 dB typical at , Purpose Gallium Arsenide FET Typical Performance, T a Absolute Maxim um 1 +7 V -tv lo ss 275 mW 175 , gallium arsenide Schottky-barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers


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PDF 11411th ATF-26550 AT-10650-5) AT10650-5
IC ATA 2388

Abstract: HMF0330 ATA 2388 harris 723 TIP 642 transistor
Text: 3y _ HMF-0330 HIGH GAIN GaAs FET LOW CURRENT PRODUCT DATA 2-20 GHz 8 dB GAIN 25 mW NOVEMBER , ain Under Low Current Conditions 8 dB G ain Typical @ 18 GHz \ 13.5 dB G ain Typical @ 8 GHz 11.0 dB Gain Typical @ 12 GHz Excellent Broadband Performance Excellent Noise Figure Performance 1.3 dB , Scratch and Short Circuit Protection FEATURES DESCRIPTION The high gain HMF-0330 Gallium Arsenide , Gallium Arsenide substrates of its own m anufacture. Ion im plantation, a T|/Pt/Au metallization system


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PDF HMF-0330 3300-A® IC ATA 2388 HMF0330 ATA 2388 harris 723 TIP 642 transistor
2-18 GHz Low Noise Gallium Arsenide FET

Abstract: m3636 175C SPF-2086
Text: -2086 0.1-12 GHz , Low Noise PHEMT G a As FET Product Features • High Gain: 17dB at 2 GHz , 10dB at 12 GHz â , 100mW Transmitters 3 Stanford Microdevices SPF-2086 0.1-12 GHz Low Noise PHEMT GaAs FET Absolute , performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide , ceramic PHEMT FET 's are available in tape and reel form and in different package styles. Optimum Noise , nits Min. Typ. Max. nfopt Optimum Noise Figure: V d s = 5.0 V, Ids = 40mA f = 0.1 GHz f = 12.0 GHz d


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PDF SPF-2086 21dBm 100mW 2-18 GHz Low Noise Gallium Arsenide FET m3636 175C
1999 - SPF-2086

Abstract: 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086
Text: gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz , Low Noise PHEMT GaAs FET 1dB output power is +21dBm at 5V and 50mA. This , ://www.stanfordmicro.com SPF-2086 0.1-12 GHz Low Noise PHEMT GaAs FET Absolute Maximum Ratings at 25C Maximum , Stage for 100mW Transmitters dB 0.5 0.0 0.1 Low Noise FETs Optimum Noise Figure vs , cause permanent damage. 2. Mounting Surface Temperature = 25° C Low Noise FETs Noise Parameters


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PDF SPF-2086 SPF-2086 21dBm 100mW 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086
HMF-0600

Abstract: HMF0600 transistor b 1138 906000
Text: -0600's performance, uniformity, and · reliability objectives, Harris employs extremely low defect Gallium Arsenide , efficiency HMF-0600 Gallium Arsenide Microwave Power Field Effect Transistor Chip has been specifically , MW SEMICONDUCTOR - 97D 00027 PRODUCT DATA HMF-0600 POWER GaAs FET D T ' 3 / *«55 -v 2-18 GHz 250 mW 8.0 dB Gain Fèbruaiy 1984 J HARRIS MICROWAVE SEMICONDUCTOR , Efficiency performance, 35% 1dB' 8 GHz 8dB Associated Gain at 8 GHz ' Submicrometer Gate Length for High Gain


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PDF HMF-0600 9-06000-C© HMF0600 transistor b 1138 906000
spf 316

Abstract: spf8
Text: SPF-684, -884 2-12 GHz Low Noise PHEMT GaAs FET August, 1993 Features - Pseudomorphlc HEMT Technology - Low Noise Figure: 0.5dB Typical at 4 GHz - High Associated Gain: 15dB Typical at 4 GHz - Low , 4 SPF-684, -884 2-12 GHz Low Noise PHEMT GaAs FET Noise Parameters Freq GHz 2.0 4.0 6.0 8.0 , second stage of low noise cascades operating in the 2-12 GHz frequency range. This device has a 0.3 , -684 and -884 are high performance PHEMT gallium arsenide field effect transistors housed in low-cost


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PDF SPF-684, SPF-684 spf 316 spf8
spf 2086

Abstract: SPF-2086
Text: icro.com 2-17 13 ¿3 S iaijjoid Microdevtces SPF-2086 0.1-12 GHz Low Noise PHEMT GaAs FET A b s , available in tape and reel form and in different package styles. SPF-2086 0.1-12 GHz , Low Noise PHEMT GaAs FET Product Features · High Gain: 17dB at 2 GHz , 10dB at 12 GHz · +20dBm O utput Power at P1dB , Product Description Stanford M icrodevices' SPF-2086 is a high performance PHEMT gallium arsenide , % Power Added Efficiency · 1.0dB Noise Figure at 12 GHz Applications · Driver Stage fo r VSAT, PCS


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PDF SPF-2086 100mW SPF-2086 sSs22s| spf 2086
2003 - spf 557

Abstract: SPF-2086T SPF2086T sirenza fet
Text: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices' SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm , : (800) SMI-MMIC 1 http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Absolute , 2 http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Scattering Parameters , http://www.sirenza.com EDS-101189 Rev E SPF-2086T Low Noise FET Scattering Parameters: Typical


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PDF SPF-2086T SPF-2086T EDS-101189 spf 557 SPF2086T sirenza fet
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