The Datasheet Archive

2-12GHz Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - EMM5832VU

Abstract: EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic
Text: No file text available


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PDF EMM5832VU EMM5832VU 800mA EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic
2005 - EMM5832

Abstract: mmic case styles EMM5832VU k-band amplifier Diclad-522 power amplifier mmic
Text: No file text available


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PDF ES/EMM5832VU EMM5832VU EMM5832 mmic case styles k-band amplifier Diclad-522 power amplifier mmic
2011 - Power Amplifier MMIC

Abstract: SMM5845V1B SMM5845V1 330-DB
Text: No file text available


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PDF SMM5845V1B SMM5845V1B Power Amplifier MMIC SMM5845V1 330-DB
EMM5832VU

Abstract: No abstract text available
Text: No file text available


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PDF EMM5832VU 50ohm EMM5832VU
circulator

Abstract: No abstract text available
Text: No file text available


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PDF T-121S15 circulator
SMM5845V1

Abstract: MMIC marking code U
Text: No file text available


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PDF SMM5845V1B 50ohm SMM5845V1B SMM5845V1 MMIC marking code U
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF SMM5845V1B 50ohm SMM5845V1B
2009 - EMM5837V1BT

Abstract: power amplifier mmic
Text: No file text available


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PDF EMM5837V1B EMM5837V1B EMM5837V1BT power amplifier mmic
2004 - FMM5811GJ-1

Abstract: FMM5811
Text: No file text available


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PDF FMM5811GJ-1 FMM5811GJ-1 FMM5811
MGFS52B2122

Abstract: No abstract text available
Text: No file text available


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PDF MQFS52B2122 12GHz MGFS52B2122 GF-49 12GHz May-01 MGFS52B2122
E 212 fet

Abstract: No abstract text available
Text: No file text available


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PDF MGFS48B2122 MGFS48B2122 12GHz 25deg 12GHz E 212 fet
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF SMF635-F2103
2001 - FMM5811GJ-1

Abstract: 17800 power amplifier mmic FMM5811
Text: No file text available


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PDF FMM5811GJ-1 FMM5811GJ-1 FCSI0101M200 17800 power amplifier mmic FMM5811
2001 - FMM5811GJ-1

Abstract: FMM5811 power amplifier mmic
Text: No file text available


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PDF FMM5811GJ-1 FMM5811GJ-1 FCSI0101M200 FMM5811 power amplifier mmic
2006 - EMM5832

Abstract: No abstract text available
Text: No file text available


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PDF EMM5832VU EMM5832VU EMM5832
SNA-486

Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
Text: Table of Contents Model SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 SPF-2076 SPF-2098 SPF-2298 SPF-2086 SPF-2086K SHF-0186 SHF-0186K SHF-0200 SHF-0500 SHF-1000 SLN-176 SLN-186 SM M -008,-010 SM M -108,-110 SM M -808 SM M -810-I SNA-176 SNA-276 SNA-376 SNA-476 SNA-576 SNA-186 SNA-286 SNA-386 SNA-486 SNA-586 SM M -180 SM M -208 SM M -210 SM M -280-2 SM M -280-4 SM M -680 SSW -124 SSW -224 Description Low-Noise GaAs FETs 1-2GHz 0.8dB NF r®2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB


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PDF SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 SPF-2076 SPF-2098 SPF-2298 SPF-2086 SNA-486 Z27D sna-186 SPDT FETs
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF EMM5832VU 50ohm EMM5832VU
fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Text: FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|am • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor (SuperHEMT™) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low


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PDF FH40LG 2-12GHz FHC40LG FCSI0598M200 fujitsu hemt fujitsu transistor HEMT fhc40lg 280AM low noise hemt
2006 - DBM28

Abstract: ED-4701 FMM5823X power amplifier mmic
Text: No file text available


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PDF FMM5823X FMM5823X 1906B, DBM28 ED-4701 power amplifier mmic
Not Available

Abstract: No abstract text available
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB (Typ.)@f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost


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PDF FHC40LG FH40LG 2-12GHz
1998 - Low Noise HEMT

Abstract: Super low noise figure and high associated gain
Text: FHC40LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.3dB (Typ.)@f=4GHz · High Associated Gain: 15.5dB (Typ.)@f=4GHz · Lg ² 0.15µm, Wg = 280µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost


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PDF FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain
2006 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF EMM5832VU EMM5832VU
EMM5832VUT

Abstract: EMM5832VU RO4003 power amplifier mmic
Text: No file text available


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PDF EMM5832VU 50ohm EMM5832VU EMM5832VUT RO4003 power amplifier mmic
2004 - 08/bup 3110 transistor

Abstract: No abstract text available
Text: FHC40LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.3dB (Typ.)@f=4GHz · High Associated Gain: 15.5dB (Typ.)@f=4GHz · Lg 0.15µm, Wg = 280µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Available DESCRIPTION The FHC40LG is a Super High Electron Mobility Transistor (SuperHEMT) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost


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PDF FHC40LG FHC40LG 2-12GHz 08/bup 3110 transistor
1998 - fhc40lg

Abstract: 18GHZ LG 932 fujitsu hemt
Text: FHC40LG Super Low Noise HEMT FEATURES · Low Noise Figure: 0.3dB (Typ.)@f=4GHz · High Associated Gain: 15.5dB (Typ.)@f=4GHz · Lg 0.15µm, Wg = 280µm · Gold Gate Metallization for High Reliability · Cost Effective Ceramic Microstrip (SMT) Package · Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost


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PDF FHC40LG FH40LG 2-12GHz FCSI0598M200 fhc40lg 18GHZ LG 932 fujitsu hemt
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