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1n5819 smd Datasheets Context Search

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2006 - 1N5819 smd diode

Abstract: AMC7150 smd package 1N5819 1n5819 smd LED lighting circuit diagram 24v amc7150 12vdc led driver AMC7150 12v SMD 6 PIN IC FOR PWM DA011 driver led 7150
Text: / SMD 0603 RSENSE 680~820pF 0.87 DF 1N5819 DO-41 (Axial Lead) L 220uH - Copyright © 2006, ADDtek Corp. http://www.addmtek.com DIP / SMD 1206 2-1 DA011 September 1, 2006 , / SMD 0603 RSENSE 680~820pF 0.83 DF 1N5819 DO-41 (Axial Lead) L 220H - Copyright © 2006, ADDtek Corp. http://www.addmtek.com DIP / SMD 1206 2-2 DA011 September 1, 2006 , . CT DIP / SMD 0603 RSENSE 680~820pF 0.92 DF 1N5819 DO-41 (Axial Lead) L 220uH


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PDF AMC7150 AMC7150 12VDC 24VDC AMC7150: 1N5819 smd diode smd package 1N5819 1n5819 smd LED lighting circuit diagram 24v amc7150 12vdc led driver AMC7150 12v SMD 6 PIN IC FOR PWM DA011 driver led 7150
BS170 SMD

Abstract: EVB90807 BS170 application note 1N5819 S4 MLX90808 PROMI-ESD-02 LM2675M-05 MLX90257 MLX90807 PGB0010603
Text: +5V 4 0V +5V_TMPL 5 PW1 6 10UH SMD YELLOW 2 SMD YELLOW 2 OpAmp Supply , 15.5V VCC Zap 0V 1 1 R16 1.8K 13 SMD YELLOW 2 SMD YELLOW 2 Vdd 8 +3.3V , # 2 CON2 1 3 1N5819 Q12 R54 100K RL1 75 SW6 VCC_ADC 5V DC SW8 1 0V , Q1 BC817 R12 VBUS_DET R29 R5 DDP D12 15K SMD RED PWR_EN USB_DP_PUP 1 100NF , ADVREF D11 SMD RED R6 PA[0.31] ADVREF ADVREF AD4 AD5 AD6 AD7 GND GND GND GND


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PDF EVB90807 MLX90257 MLX90269 MLX90807 MLX90808 RS232 EVB90807 PROMI-ESD-02 100NF BS170 SMD BS170 application note 1N5819 S4 MLX90808 PROMI-ESD-02 LM2675M-05 MLX90257 MLX90807 PGB0010603
1N5817

Abstract: 1N5819 N5819 1N5818 1n5819 philips 1.1N5819 N5818 PHILIPS 1N 1N5817 Philips 1N5817/1N5818/1N5819
Text: N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 ■APX 1N5817/1N5818/ 1N5819 Schottky , PARAMETER TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrwm crest working reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V Vr continuous reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 24 V 1N5818 36 V 1N5819 48 V 'F(AV) average forward current 1N5817 1 A 1N5818 1 A 1N5819 1 A 'fsm


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PDF 1N5817/1N5818/1N5819 1N5817 1N5818 1N5819 N5819 1n5819 philips 1.1N5819 N5818 PHILIPS 1N 1N5817 Philips 1N5817/1N5818/1N5819
Not Available

Abstract: No abstract text available
Text: DO-41 Glass 1 Amp I ■' ~ Use Advantages 1N5819 HR Schottky Rectifier I (HR) j Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss. Usid in low voltage inverters and converters, surge protection and steering diode applications BKC produces generic , &B) SMD available in SCD Versions • Symbol Value Unit PIV 45 Volts I* 1.0


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PDF DO-41 1N5819 -1950Q 01g41
KX8530

Abstract: 1N5822 SMD sot-153 1N5822 smd diode ic 6 pin smd for power supply 1N5822 SMD PACKAGE 1N5819/1N5822 SMD smd package 1N5819 1N5822 SMD data sheet download 1n5819 smd
Text: IC SMD Type PFM Step-up DC/DC Converter With High Efficiency And Low Noise KX8530 Outline , supply current. Power source for LED PIN Configuration www.kexin.com.cn 1 IC SMD Type , -153 www.kexin.com.cn IC SMD Type KX8530 Block Diagram Absolute Maximum Ratings Input voltage range , SMD Type KX8530 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min , side ç 1. Diode: Schottky type, such as :1N5817, 1N5819 , 1N5822 3. Capacitor: 100uF(Tantalum


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PDF KX8530 KX8530 200mA 1N5817, 1N5819, 1N5822 100uF 1N5822 SMD sot-153 1N5822 smd diode ic 6 pin smd for power supply 1N5822 SMD PACKAGE 1N5819/1N5822 SMD smd package 1N5819 1N5822 SMD data sheet download 1n5819 smd
1n5819

Abstract: No abstract text available
Text: VS- 1N5819 , VS- 1N5819 -M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS- 1N5819 . axial leaded Schottky rectifier has been optimized for very low forward voltage , VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VS- 1N5819 VSS- 1N5819 , www.vishay.com/doc?91000 VS- 1N5819 , VS- 1N5819 -M3 www.vishay.com Vishay Semiconductors ELECTRICAL , style DO-204AL (DO-41) g 0.012 Approximate weight oz. 1N5819 Note (1) Mounted 1" square


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PDF VS-1N5819, VS-1N5819-M3 DO-204AL 2002/95/EC DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 1n5819
2001 - 0-12v variable power supply

Abstract: LM358 pinout 1A current to 0-5v voltage converter using LM358 motorola 1N4148 MIC4575WU Nichicon 1N5819 LM2575 MBRS130LT3 1N5244
Text: GND 1 C1 150µF 35V 5.0V/1A 68µH 4 D1 1N5819 3 C2 330µF 16V Fixed , 4 D1 1N5819 C1 150µF 35V UPL1V151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 , 4 D1 1N5819 C2 330µF 16V UPL1J151MPH, ESR = 0.12 UPL1C331MPH, ESR = 0.12 1N5819 , Motorola 1N5819 L1 Coiltronics PL52A-10-500 DCR = 0.045 D1 1N5819 C2 680µF 16V -5V/0.2A , 1N5819 UPL1V151MPH, ESR = 0.12 UPL1C681MPH, ESR = 0.065 1N5819 PL52A-15-500, DCR = 0.054 Figure


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PDF MIC4575 200kHz MIC4575 52kHz LM2575. M9999-062105 0-12v variable power supply LM358 pinout 1A current to 0-5v voltage converter using LM358 motorola 1N4148 MIC4575WU Nichicon 1N5819 LM2575 MBRS130LT3 1N5244
1999 - 1N5819

Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in , Schottky barrier diodes 1N5817; 1N5818; 1N5819 LIMITING VALUES In accordance with the Absolute , 36 V 1N5819 - 48 V 1N5817 - 20 V 1N5818 - 30 V 1N5819 -


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PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
2010 - LPC-H3131

Abstract: olimex 1N5819 SS14 SCJ325P00XG0B02G LPC3131 VSSA12 ssi protocol K4S561632C-TC fb0805 ARM926EJ-S
Text: 100nF C50 10uF/ 6. 3V(NA) ADJ/GND 47uF/6.3V/TANT C83 1 47uF/6.3V/TANT 1N5819 (SS14 , PWR_JACK 1N5819 (SS14) R18 220R/1% C13 1N5819 (SS14) +5V_JLINK 3.083V CLOSE R17 1 5 0R/1 % 1N5819 (SS14) +5V_USB_TO_UART D2 VR1(5V) LM1117IMPX-ADJ D1 47uF/6.3V/TANT + , K4S561632C-TC/L75 LINE_OUT 2 C94 R66 G1 DB104( SMD ) EXT1-26 EXT1-25 EXT1-24 EXT1-23 2 4 , 10uF/6.3V USB GND4 GND3 C69 NA C17 A12 Q12.000MHz/ HC-49SM( SMD )/ 20pF L4 C15


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PDF LPC-H3131 LPC3131 32-bit ARM926EJ-S, 180Mhz, Page20 olimex 1N5819 SS14 SCJ325P00XG0B02G VSSA12 ssi protocol K4S561632C-TC fb0805 ARM926EJ-S
1N5819 smd diode

Abstract: BKC Semiconductors DO-213AB GLASS Schottky
Text: DO-41 Glass 1 Amp Use Advantages 1N5819 HR Schottky Rectifier (HR) BKC produces generic equivalents to JAN / TX/TXV levels per MIL-S-19500/586 with internal source control drawings. Use HR; HRX or HRV suffixes for cost effective high reliability parts or use your own SCD. Features DO-41 Glass Package · · · · · · · · (nominal dimensions) Humidity proof glass Thermally matched system glass - , quality LL-41 MELF (DO-213AB) SMD available in SCD Versions Low forward voltage drop. Consult factory


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PDF DO-41 1N5819 MIL-S-19500/586 LL-41 DO-213AB) 1N5819 smd diode BKC Semiconductors DO-213AB GLASS Schottky
1N5819 smd diode

Abstract: BKC Semiconductors 1N5819 smd
Text: LL-41 MELF SMD 1Amp Use Advantages 1N5819 URHR HR Schottky Rectifier BKC produces generic equivalents to JAN TXV levels per MIL-S-19500 / 586 with internal source control drawings. Use HR, HRX or HRV suffixes for cost effective high reliability parts or use your own SCD. LL-41 MELF (DO-213AB) Features Surface Mount Package · · · · · · · Humidity proof glass (nominal dimensions) glass ^ Thermally matched system - - n - _-Schottky High surge capability No applications restrictions . .


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PDF LL-41 1N5819 MIL-S-19500 DO-213AB) DO-41 01g41 1N5819 smd diode BKC Semiconductors 1N5819 smd
2006 - 1N5819

Abstract: 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
Text: 1N5817 ­ 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! , Storage Temperature Range 1N5819 VR(RMS) RMS Reverse Voltage 1N5818 VRRM VRWM VR Peak , . 1N5817 ­ 1N5819 1 of 4 © 2006 Won-Top Electronics 1.0 IF, NSTANTANEOUS FORWARD CURRENT (A , 1N5819 1.0 Tj = 25ºC Pulse Width = 300 µs 2% Duty Cycle 0.1 0 TL, LEAD TEMPERATURE (ºC , Fwd Surge Current 1N5817 ­ 1N5819 2 of 4 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical


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PDF 1N5817 1N5819 DO-41 DO-41, MIL-STD-202, 1N5819 1N5817-1N5819 datasheets diode 1n5818 DIODE 1n5819 1N5817 1N5817-T3 1N5817-TB 1N5818 1N5818-T3 1N5818-TB
2006 - 1N5819/50SQ100

Abstract: No abstract text available
Text: 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features  , Thermal Resistance Junction to Lead (Note 1) Operating and Storage Temperature Range 1N5819 VR(RMS , . 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1N5817 – 1N5819 1 of 4  , 0 10 40 60 80 100 120 140150 1N5817 10 1N5818 1N5819 1.0 Tj = , 1N5817 – 1N5819 2 of 4 1.0 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance


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PDF 1N5817 1N5819 DO-41 DO-41, MIL-STD-202, 1N5819/50SQ100
2012 - VS-1N5819TR-M3

Abstract: VS-1N5819-M3 1n5819 vishay make
Text: VS- 1N5819 , VS- 1N5819 -M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS- 1N5819 . axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS- 1N5819 40 VSS- 1N5819 -M3 40 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS- 1N5819 , VS- 1N5819 , CONDITIONS VALUES - 40 to 150 80 0.33 0.012 1N5819 UNITS °C °C/W g oz. Note (1) Mounted 1" square PCB


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PDF VS-1N5819, VS-1N5819-M3 DO-204AL DO-41) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-1N5819TR-M3 VS-1N5819-M3 1n5819 vishay make
Not Available

Abstract: No abstract text available
Text: 1N5818 1N5819 1N5817 1N5818 1N5819 n o n - r e p e titiv e p e a k re v e rs e v o lta g e 20 30 40 1N5817 1N5818 1N5819 c o n tin u o u s r e v e rs e v o lta g e MAX. 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 c r e s t w o r k in g re v e rs e v o lta g e Vr TYPE 1N5817 1N5818 1N5819 r e p e titiv e p e a k re v e rs e v o lta g e 25 , specification 1N5817/1N5818/ 1N5819 N AMER PHILIPS/DISCRETE MECHANICAL DATA Dimensions in mm 5 m ax


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PDF 1N5817 100K/W. 1N5817/1N5818/1N5819 1N5819
1N5810 diode

Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO , applications. Maximum Ratings and Electrical Characteristics at 25 ºC 1N5817 1N5818 1N5819 VRRM , www.fagorelectronica.com Document Name: 1n5810 Version: Feb-13 (1) Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ordering information PREFERRED P/N PACKAGE CODE 1N5819 TR TR 1N5819 HF AMP AMP 1N5819 HF TR TR UNIT WEIGHT (g) AMMO BOX 3,000 0.325 5,000


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PDF 1N5817 1N5819 DO-204AL DO-41) AEC-Q101 2011/65/EU 2002/96/EC MIL-STD-750 1N5810 diode
2013 - 1N5810 diode

Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Voltage 20 V to 40 V Current 1.0 A DO , 1.0 A 30 A 55 pF -65 to +125 °C -65 to +150 °C 1N5819 40 28 40 VRRM VRMS VDC IF(AV) IFSM Cj Tj Tstg , Version: Oct-11 Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ordering information PREFERRED P/N 1N5819 AMP 1N5819 TR 1N5819 HF AMP 1N5819 HF TR PACKAGE CODE AMP TR AMP TR DELIVERY , .6±0.1 Version: Oct-11 Page Number: 2/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ratings and


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PDF 1N5817 1N5819 DO-204AL DO-41) 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 1N5810 diode
1N817

Abstract: 1N5817 1N5819 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
Text: Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 , • Polarity protection. DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes , Manufacturer Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 , CONDITIONS MIN. MAX. UNIT Vr continuous reverse voltage 1N5817 - 20 V 1N5818 - 30 V 1N5819 - 40 V Vrsm non-repetitive peak reverse voltage 1N5817 - 24 V 1N5818 - 36 V 1N5819 - 48 V


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PDF 1N5817; 1N5818; 1N5819 1N5817 1N5819 711DfiSb 7110fl2b 1N817 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
Not Available

Abstract: No abstract text available
Text: VS- 1N5819 , VS- 1N5819 -M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , DESCRIPTION The VS- 1N5819 . axial leaded Schottky rectifier has been optimized for very low forward voltage , VS- 1N5819 VSS- 1N5819 -M3 UNITS 40 40 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER , www.vishay.com/doc?91000 VS- 1N5819 , VS- 1N5819 -M3 www.vishay.com Vishay Semiconductors ELECTRICAL , style DO-204AL (DO-41) g 0.012 Approximate weight oz. 1N5819 Note (1) Mounted 1" square


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PDF VS-1N5819, VS-1N5819-M3 DO-204AL 2002/95/EC DO-41) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
2011 - 1n5819

Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features I Very small conduction , 5 1/7 www.st.com 7 Characteristics 1 1N5817, 1N5818, 1N5819 Characteristics , (RMS) 1N5819 20 Repetitive peak reverse voltage 1N5818 30 40 Forward rms current , Tests conditions Tj = 25 °C Tj = 100 °C VR = VRRM 1N5817 1N5818 1N5819 Unit 0.5 , / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 2/7 Doc ID 6262 Rev 5 1N5817, 1N5818


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PDF 1N5817, 1N5818, 1N5819 DO-41 DO-41 1n5819
2012 - VS-1N5819TR-M3

Abstract: VS-1N5819-M3
Text: VS- 1N5819 , VS- 1N5819 -M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS- 1N5819 . axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS- 1N5819 40 VSS- 1N5819 -M3 40 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS- 1N5819 , VS- 1N5819 , CONDITIONS VALUES - 40 to 150 80 0.33 0.012 1N5819 UNITS °C °C/W g oz. Note (1) Mounted 1" square PCB


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PDF VS-1N5819, VS-1N5819-M3 DO-204AL DO-41) 2002/95/EC 11-Mar-11 VS-1N5819TR-M3 VS-1N5819-M3
2002 - 1N5818

Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF(AV , reliability waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for , www.irf.com 1 1N5818, 1N5819 Bulletin PD-20590 rev. A 05/02 Voltage Ratings Part number VR 1N5818 1N5819 30 40 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V


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PDF PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N5818, 1N5818 datasheets diode 1n5818 1N581X DO-204AL
2012 - 1N5810 diode

Abstract: No abstract text available
Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Voltage 20 V to 40 V Current 1.0 A DO , 1.0 A 30 A 55 pF -65 to +125 °C -65 to +150 °C 1N5819 40 28 40 VRRM VRMS VDC IF(AV) IFSM Cj Tj Tstg , Version: Oct-11 Page Number: 1/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ordering information PREFERRED P/N 1N5819 AMP 1N5819 TR 1N5819 HF AMP 1N5819 HF TR PACKAGE CODE AMP TR AMP TR DELIVERY , .6±0.1 Version: Oct-11 Page Number: 2/4 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Ratings and


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PDF 1N5817 1N5819 DO-204AL DO-41 2002/95/EC 2002/96/EC DO-41. MIL-STD-750 J-STD-002 1N5810 diode
2001 - 1N5819 SOD-123

Abstract: smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA
Text: New Product Announcement April 2001 Compact, High-efficiency SOD-123: 1N5819HW! Uses 35-40% Less Board Space Than Other 1 Amp SMD 's E D SOD-123 Dim 2.85 1.40 1.70 1.35 E J 2.55 D C 3.85 C H 3.55 B G Max A A B Min 0.55 Typical G 0.25 H 0.15 Typical J 0.10 All Dimensions in mm Key Features 1 , . This is a Surface Mount equivalent to 1N5817, 1N5818, and 1N5819 . End Equipment Applications ! !


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PDF OD-123: 1N5819HW! OD-123 OD-123 400mV 1N5819HW OD-87 PRLL58xx) 1N5819 SOD-123 smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA
1N817

Abstract: 1N5819 1N5817 diode 1N5819 1N5818 1N5817 schottky diode symbol 1N5819 package datasheets diode 1n5819 1n5819 data sheet 1N5819* diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 1N5817; 1N5818; 1N5819 , diodes 1N5817; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 , Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 , 1N5817 - 24 V 1N5818 - 36 V 1N5819 - 48 V 1N5817 - 20 V


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PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N817 diode 1N5819 1N5818 1N5817 schottky diode symbol 1N5819 package datasheets diode 1n5819 1n5819 data sheet 1N5819* diode
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