2000 - VCC166
Abstract: 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb
Text: Rambus Inc. MITSUBISHI ELECTRIC L-71028-0J REV PC100/ PC133 Un-buffered SDRAM DIMM Series , Capacity 64MB 128MB 256MB 512MB 1GB High Speed EDO SDRAM DDR SDRAM RDRAMTM Small outline Memory Module 72pin S.O.DIMM 144pin S.O.DIMM 200pin DDR S.O. DIMM Memory Module 144pin Micro DIMM , , SDRAM 184PIN DIMM DDR SDRAM 168PIN Buffered 3.3V,EDO Work Station 168PIN Un-buffered 3.3V,EDO , Organization Code (module type and pin number) E : 100pin SODIMM F : 144pin SODIMM G : 144pin Micro DIMM H
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L-71001-0D
128MB
256MB
512MB
72pin
144pin
200pin
168pin
VCC166
128m simm 72 pin
ddr 200pin SO DIMM
L-71001-0D
72 pin 128mb
L7105
L-71051-0C
72 simm edo dram 64mb
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: SDRAMS 71 : 126Mb SDRAMs 72 :256Mb SDRAMs 75 : 512Mb SDRAMs 7G : 1Gb SDRAMs K H P S : : : : PC133 PC133 , PLL INTEL 168Pin Reg. DIMM W/PLL RCC 168 Pin Reg DIMM W/PLL JEDEC 200Pin Reg. DIMM W/PLL 144Pin SO , HYM71V75S3201TN HYM71V73C3201TN GMM27333230ATG GMM27333230ANTG HYM71V32S755AT4 HYM71V32C735AT4 144Pin SO DIMM BOOK , . 64Mx72 Sync. EC 168Pin 256MB 32Mx72 Sync. EC Registered DIMM 512MB 64Mx72 Sync. EC 1GB 28M x l i Sync. EC 144Pin 128MB 16Mx64 Sync. SO DIMM 256MB 32Mx64 Sync. 15
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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2002 - DDR RAM 512M
Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
Text: : 256Mbit D: 512Mbit S: 144-pin SO DIMM D: 144-pin SO DIMM (TCP) M: Micro DIMM Mono Organization 2 , SDRAM , DDR SDRAM Module E: DDR2, DDR2 Module Type K: DDR Mobile RAM (Bare Chip / Package) B , : SDRAM , SDRAM Module X: XDR Elpida Memory, Inc. 2002-2006 ECT-TS-1942 July, 2006 Part Number , Density / Bank 25: 256Mb / 4-bank 51: 512Mb / 4-bank 11: 1Gb / 8-bank Package SE: FBGA SK: FBGA , Density / Bank 25: 256M / 1-rank 26: 256M / 2-rank 51: 512M / 1-rank 52: 512M / 2-rank 10: 1GB / 1
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ECT-TS-1942
1200MHz
184-pin
160-pin
232-pin
1066MHz
DDR RAM 512M
ELPIDA mobile DDR
TSOP II elpida
Elpida Memory
DDR2-533
DDR2-667
DDR2-800
PC2-5300
PC2-6400
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1gb pc133 SDRAM DIMM 144pin
Abstract: 54-PIN PC100 gm72v66841
Text: : 1Gb SDRAMs PC133 CL2 PC133 CL3 PC100 CL2 PC100 CL3 MODULE REVISION NONE : ORIGINAL M : 1st REV , JEDEC 200Pin Reg. DIMM W/PLL D M W 144Pin SO DIMM SUN 232Pin Reg. DIMM W/PLL L : Low Power DIE , 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE New SDRAM P; J X - xx x , Temperature E: Extended Temperature SPEED 200MHz 183MHz 166MHz 143MHz PC133 ,CL2 PC133.CL3 125MHz PC100, CL2 , HY57V56420HDT (Cheong-ju) 9 hi/|nix SDRAM PART NUMBE HY XX X XXX XX X X X XX XX - XXX X 5 55 6 7 75
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
1gb pc133 SDRAM DIMM 144pin
54-PIN
PC100
gm72v66841
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2001 - ELPIDA
Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Text: . 6 5. SDRAM Module 168-pin Registered DIMM . 7 6. SDRAM Module 168-pin Unbuffered DIMM . 7 7. SDRAM Module 144-pin SO DIMM , 7 DRAM Selection Guide 7. SDRAM Module 144-pin SO DIMM Density 512MB Organization , . 8 9. DDR SDRAM Module 184-pin Registered DIMM
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E0226E80
M01E0107
ELPIDA
EDS5104ABTA
EDS5108ABTA
PC800
ELPIDA DRAM selection guide
1gb 144pin pc133 so dimm
200pin SO DIMM
sdram elpida
EDS5116ABTA
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NT256D64S88B1G-6K
Abstract: NT56V1616A0T-7 PC2100 NT256D64SH8B0GM-75B PC2700-2533 NT512D64S8HB1G-6K NT256D64S88AMGM-7K 128M DDR Infineon SODIMM NT5SV4M16DT-6K NT5SV16M8CT-7K
Text: 256 = 256MB 512 = 512MB 1G = 1GB SDRAM 6K=PC166-3-3-3 7K= PC133 -2-2-2 75B= PC133 -3-3-3 8B , /4Q02 Modules SDRAM Module 168 pin Unbuffered DIMM Density 128 MB 256 MB 512 MB Part , 2 high stack 4 = x4 based SDRAM 6 = 166MHz 7 = 143MHz 7K= PC133 -2-2-2 75B= PC133 -3-3-3 75 = , ~0.14 micron processes to manufacture 16M, 64M, 128M, 256M SDRAM , and 128M, 256M DDR.All DRAM devices are designed to meet PC100, PC133 , or DDR266, DDR333 specifications. Thanks to strict quality
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SL72G8P128M8H-A75AV
Abstract: 144-Pin Unbuffered SDRAM SO-DIMM PC133 IC SDA 2001 bcd to hex
Text: SL72G8P128M8H-A75AV Advanced 128M X 72 Bits ( 1GB ) 144-Pin Unbuffered SDRAM SO-DIMM with ECC ( PC133 ) FEATURES GENERAL DESCRIPTION · The SimpleTech SL72G8P128M8H-A75AV is a 128M x 72 bits Unbuffered Synchronous Dynamic RAM ( SDRAM ) SmallOutline Dual In-line Memory Module (SO-DIMM). · · · · · · · · PC133 Compliant (tCYC=7.5ns@CL=3) (see Ordering Information for options) Burst , SDRAM access time from clock at CL=3 (tAC) 5.4ns 54h 11 DIMM configuration type ECC
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SL72G8P128M8H-A75AV
144-Pin
PC133)
SL72G8P128M8H-A75AV
PC133
cycles/64ms
100MHz
100MHz
144-Pin Unbuffered SDRAM SO-DIMM PC133
IC SDA 2001
bcd to hex
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2012 - samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: Registered DIMM 63: x63 PC100 / PC133 μSODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 , (JEDEC PC133 ) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T , ⢠DDR3 SDRAM ⢠DDR2 SDRAM ⢠DDR SDRAM ⢠SDRAM ⢠Mobile DRAM ⢠Graphics DDR SDRAM ⢠DRAM Ordering Information FLASH - SSD Pages 13-15 samsung.com/semi/flash â
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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1gb pc133 SDRAM DIMM 144pin
Abstract: SL72G8T128M8H-A75AV
Text: Advanced SL72G8T128M8H-A75AV 128M X 72 Bits ( 1GB ) 144-Pin SDRAM SO-DIMM ( PC133 ) FEATURES , RAM ( SDRAM ) Small-Outline Dual Inline Memory Module (SO-DIMM). · · · · · · · PC133 , IC Towers (stack of two SDRAMs) mounted on a 144-pin glass epoxy substrate. Each IC Tower consists , from one clock input. The module has gold edge connections and is intended for mounting into 144-pin , Ordering Information for PC133 performance options. PC133 133MHz CL SL72G8T128M8H-A75AV 3clks
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SL72G8T128M8H-A75AV
144-Pin
PC133)
SL72G8T128M8H-A75AV
PC133
cycles/64ms
bits15-8)
bits23-16)
100MHz
1gb pc133 SDRAM DIMM 144pin
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2000 - L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: ) 64MSD(x8) 64MSD(x8) 64MSD(x8) 128MSD(x8) 128MSD(x8) 168pin SDRAM Unbuffered DIMM 64MB 144pin , 64M SDRAM SDRAM SDRAM 16M x 4 (8K Ref) FPM 16M x 4 (8K Ref) EDO 8M x 8 (4K Ref) FPM 8M x 8 (4K Ref , ) PC133 ,PC100 8M x 8 (LVTTL) PC133 ,PC100 4M x 16 (LVTTL) PC133 ,PC100 32M x 4 (LVTTL) PC133 ,PC100 16M x 8 (LVTTL) PC133 ,PC100 8M x 16 (LVTTL) PC133 ,PC100 64M x 4 (LVTTL) PC133 ,PC100 32M x 8 (LVTTL) PC133 ,PC100 16M x 16 (LVTTL) PC133 ,PC100 Note) S: Self refresh, Extended refresh MITSUBISHI ELECTRIC L
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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2000 - sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Remark 64MSD(x8) 64MSD(x8) 64MSD(x8) 64MSD(x8) 128MSD(x8) 128MSD(x8) 168pin SDRAM Unbuffered DIMM 64MB 144pin SDRAM 8byte S.O.DIMM 168pin SDRAM RegisteredDIMM 64MB MH8S72DBFD MH8S72DCFD 7 6 , ELECTRIC 128MSDRAM 128M SDRAM Type Designation Code M2 V 28 S 4 0 A TP - 6 Access Item 6 : PC133 (CL3 , option for Flexible Production - SDR: PC133 [CL=3 (3-3-3)] support - SDR: High-density 1GB DIMMs - DDR , Now 64M DRAM 256M 128M 64M SDRAM SDRAM SDRAM 16M x 4 (8K Ref) FPM 16M x 4 (8K Ref) EDO 8M x 8
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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2012 - K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: : SODIMM 3. Data bits 12: x72 184pin Low Profile Registered DIMM 63: x63 PC100/ PC133 μSODIMM with SPD for 144pin 64: x64 PC100/ PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 184pin Unbuffered DIMM 70: x64 200pin , DIMM 95: x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133 ) 4. DRAM Component Type , 4â12 ⢠DDR3 SDRAM ⢠DDR2 SDRAM ⢠DDR SDRAM ⢠SDRAM ⢠Mobile DRAM ⢠Graphics
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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1998 - PC133 registered reference design
Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
Text: ) 256MB SDRAM DDR SDRAM 32Mx64 SDRAM SDRAM 512MB 64Mx72 (ECC) SDRAM DDR SDRAM SDRAM 1GB 128Mx72 (ECC) SDRAM 2GB 256Mx72 (ECC) SDRAM PC133 PC100 Registered Registered PC133 PC200 PC100 PC100 PC133 PC266 , -F HB52E168EN -F HB52F168EN -F HB52RD168DB 144-pin SO DIMM -F HB56UW3272ETK -F HB52R329E22 168-pin DIMM -F HB52RF329E2 -F HB54A2569F1 184-pin DIMM -10B HB52RD328DC 144-pin SO DIMM -F HB52E649E12 -B 168 , PC100 SDRAM PC133 54-pin TSOP II Voltage Package Part Number HM5165405FTT HM5165805FTT HM5165165FTT
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HM5225645F-B60
HM5225325F-B60
64-bit
32-bit
PC/100
ADE-203-1014C
HM5225645F
256-Mbit
1048576-word
PC133 registered reference design
512MB 8Mx32 DDR DRAM
HM5225645FBP
Hitachi DSA002714
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2001 - PC133 registered reference design
Abstract: R1A12
Text: 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 General Description The , on the printed circuit board for each SDRAM . This PC133 Dual In-line Memory Module ( DIMM ) is intended , 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 PIN FUNCTION DESCRIPTION Pin A0 , : Jim Walker Page 3 of 11 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4 , Walker Page 4 of 11 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 SERIAL
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PC133
MT128722R8SN4-3226
MT128722R8SN4-3226
72bit
400mil
459-2884Website:
PS001259
PC133 registered reference design
R1A12
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2009 - K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Registered DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 184pin , , 512Mb:8th, 1Gb :5th generation) Mobile DDR SDRAM PEA 1 : POP MONO 6 : POP MONO(LF,HF) 7 : 90-FBGA 8 , (JEDEC PC133 ) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T , Graphics DDR SDRAM · DRAM Ordering Information · OneDRAMTM: see Fusion MCP www.samsung.com/semi
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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2010 - K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 184pin , ) * K0 (1600Mbps) available in ES only DDR3 SDRAM COMPONENTS Density Voltage 1Gb 1.5V # , (JEDEC PC133 ) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T , Internal DVD · Internal COMBO DRAM · Graphics DDR SDRAM · DRAM Ordering Information Pages 24-27
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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2011 - K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Registered DIMM 63: x63 PC100 / PC133 μSODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 , Halogen-free) B = FBGA (Lead-free & Halogen-free, Flip Chip) 512Mb 1Gb Notes: DDR SDRAM COMPONENTS , (JEDEC PC133 ) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T , ¢ DDR3 SDRAM ⢠DDR2 SDRAM ⢠DDR SDRAM ⢠SDRAM ⢠Mobile DRAM ⢠Graphics DDR SDRAM â
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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2000 - sagami
Abstract: m5m5v108c SRAM QFP 64MB cmos dram 8m x 16 128k x8 SRAM TSOP 8M X 16 SDRAM prx usa Mitsubishi ECL Memory
Text: Remark 64MSD(x8) 64MSD(x8) 64MSD(x8) 64MSD(x8) 128MSD(x8) 128MSD(x8) 168pin SDRAM Unbuffered DIMM 64MB 144pin SDRAM 8byte S.O.DIMM 168pin SDRAM RegisteredDIMM 64MB MH8S72DBFD MH8S72DCFD 7 6 , Yes Yes Now Now Now 64M DRAM 256M 128M 64M SDRAM SDRAM SDRAM 16M x 4 (8K Ref) FPM 16M x 4 (8K , Ref) FPM 4M x 16 (4K Ref) EDO 16M x 4 (LVTTL) PC133 ,PC100 8M x 8 (LVTTL) PC133 ,PC100 4M x 16 (LVTTL) PC133 ,PC100 32M x 4 (LVTTL) PC133 ,PC100 16M x 8 (LVTTL) PC133 ,PC100 8M x 16 (LVTTL) PC133 ,PC100 64M x 4
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L-11003-0I
sagami
m5m5v108c
SRAM QFP 64MB
cmos dram 8m x 16
128k x8 SRAM TSOP
8M X 16 SDRAM
prx usa
Mitsubishi ECL Memory
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2005 - b1a12
Abstract: B1A10 K4S1G0632D K4S510832d K4S1G0632 B1A0
Text: is based on JEDEC PC133 Specification Rev. 1.0 November 2005 1GB , 2GB Registered DIMM SDRAM , 1GB , 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on , Registered DIMM 7.2 1GB , 128M x 72 ECC Module (M390S2950DU1) (Populated as 1 bank of x4 SDRAM Module , Registered DIMM 7.3 1GB , 128M x 72 ECC Module (M390S2950DUU) (Populated as 1 bank of x4 SDRAM Module , 2005 1GB , 2GB Registered DIMM 17.0 Physical Dimensions 17.1 128Mx72 (M390S2953DU1) SDRAM
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168pin
512Mb
medic250
K4S1G0632D
256Mx4
PC133
b1a12
B1A10
K4S510832d
K4S1G0632
B1A0
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2001 - PC133 registered reference design
Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Text: PRELIMINARY 512MB / 1GB (x72, ECC) 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE , . PRELIMINARY 512MB / 1GB (x72, ECC) 168-PIN REGISTERED FBGA SDRAM DIMM PART NUMBERS PART NUMBER , (x72, ECC) 168-PIN REGISTERED FBGA SDRAM DIMM FUNCTIONAL BLOCK DIAGRAM 512MB and 1GB Modules RS0# RS1 , , Micron Technology, Inc. PRELIMINARY 512MB / 1GB (x72, ECC) 168-PIN REGISTERED FBGA SDRAM DIMM PIN , . PRELIMINARY 512MB / 1GB (x72, ECC) 168-PIN REGISTERED FBGA SDRAM DIMM SDRAM FUNCTIONAL DESCRIPTION In
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512MB
168-PIN
168-pin,
PC100
PC133
512MB
MT8VR12818AG
MT16VR25616AG
PC133 registered reference design
16 MB Micron EDO SIMM Module
mt1l
DS1849
10EF1
10EB2
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2000 - PC133 registered reference design
Abstract: MT16LSDF3264HG-133
Text: 32 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE FEATURES · JEDEC-standard, PC100 and PC133 , 144-pin , small-outline, dual in-line memory module (SODIMM) · Utilizes 125 MHz and 133 MHz SDRAM , PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM OPTIONS · Package 144-pin SODIMM (gold) · , DIMM 's SCL (clock) and SDA (data) signals. 32 Meg x 64 SDRAM SODIMM ZM46.p65 Rev. 10/00 2 , , Micron Technology, Inc. 32 MEG x 64 SDRAM SODIMM 144-PIN SODIMM (256MB, 133 MHZ/100 MHZ) FRONT
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PC100
PC133,
144-pin,
256MB
096-cycle
MT16LSDF3264HG
MT8VR12818AG
512MB
MT16VR25616AG
PC133 registered reference design
MT16LSDF3264HG-133
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P16C2510
Abstract: P16C2509-133 P16C2510-133 F2835 P16C2509 P174AVC PC133SUP1 PC133 registered reference design STK+4133+II
Text: the PC133 DIMM net models (avail. from IBM and others) - prior to sampling: Timing budget defined in , can't afford bad press! Support chip specifications need to be consistent with the PC133 DIMM Design , IBM PC133 Support Chip Status PC133 Support Chip Status PC133SUP1 REV1 1 IBM , Register R/C SDRAM SDRAMs Device Module PLL Register Loads/ Loads/ Variation , 256MB 512MB 512MB 1GB F2510 " " " " " F' 2835 AVC'835 F' 2835 AVC'835 F'2835 AVC
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PC133
PC133SUP1
128Mb
256Mb
F2509
F2835
P16C2510
P16C2509-133
P16C2510-133
F2835
P16C2509
P174AVC
PC133SUP1
PC133 registered reference design
STK+4133+II
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2000 - 8MB SDRAM
Abstract: PC133 registered reference design
Text: 8 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE FEATURES · JEDEC-standard, PC100, rev 1.0, 144-pin , smalloutline, dual in-line memory module (SODIMM) · Utilizes 125 MHz and 133 MHz SDRAM , /datasheet.html PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM OPTIONS · Self Refresh Current , MEG x 64 SDRAM SODIMM 144-PIN SODIMM (64MB) FRONT VIEW 2.666 (67.72) 2.656 (67.45) .079 (2.00) R , 3.3V TSOP MT18LSDT6472G A = Y86 2 = 0129 (1.700") 1GB DS 128 Meg x 72 3.3V ECC Gold DIMM
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PC100,
144-pin,
096-cycle
MT4LSDT864
MT8VR12818AG
512MB
MT16VR25616AG
MT16VR25618AG
MT16VR25618AG-840A1
8MB SDRAM
PC133 registered reference design
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2004 - b1a12
Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
Text: JEDEC PC133 Specification Rev. 1.0 January 2004 512MB, 1GB , 2GB Registered DIMM SDRAM , 512MB, 1GB , 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based , January 2004 512MB, 1GB , 2GB Registered DIMM SDRAM 168Pin Registered DIMM based on 512Mb B-die , presence detect with EEPROM Rev. 1.0 January 2004 512MB, 1GB , 2GB Registered DIMM SDRAM PIN , 512MB, 1GB , 2GB Registered DIMM SDRAM PIN CONFIGURATION DESCRIPTION Pin Name Input Function
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Original
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PDF
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512MB,
168pin
512Mb
72-bit
M390S6553BT1-C7A
512MB
b1a12
K4S1G0632B
PC133 SDRAM registered DIMM 512MB samsung
M390S2950BTU-C7A
M390S2953BT1-C7A
M390S5658BT1-C7A
M390S5658BTU-C7A
M390S6553BT1-C7A
M390S6553BTU-C7A
K4S510832
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2006 - Not Available
Abstract: No abstract text available
Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module , , 512MB, 1GB Registered DIMM SDRAM 256MB, 32Mx72 ECC Module (M390S3253ET1) (Populated as 1 bank of , OE SA0 SA1 SA2 Rev. 1.6 Oct. 2006 256MB, 512MB, 1GB Registered DIMM SDRAM 512MB , A2 SDA SA0 SA1 SA2 Rev. 1.6 Oct. 2006 256MB, 512MB, 1GB Registered DIMM SDRAM , , 512MB, 1GB Registered DIMM SDRAM 1GB , 128Mx72 ECC Module (M390S2858ET1) (Populated as 2 bank of x4
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Original
|
PDF
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256MB,
512MB,
168pin
256Mb
72-bit
K4S510632E
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