2000 - VCC166
Abstract: 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb
Text: Capacity 64MB 128MB 256MB 512MB 1GB High Speed EDO SDRAM DDR SDRAM RDRAMTM Small outline Memory Module 72pin S.O.DIMM 144pin S.O.DIMM 200pin DDR S.O . DIMM Memory Module 144pin Micro DIMM , Organization Code (module type and pin number) E : 100pin SODIMM F : 144pin SODIMM G : 144pin Micro DIMM H , Rambus Inc. MITSUBISHI ELECTRIC L-71028-0J REV PC100/ PC133 Un-buffered SDRAM DIMM Series , 48pin Small TSOP loaded MITSUBISHI ELECTRIC L-71017-0J REV 144pin Small Outline DIMM Series
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L-71001-0D
128MB
256MB
512MB
72pin
144pin
200pin
168pin
VCC166
128m simm 72 pin
ddr 200pin SO DIMM
L-71001-0D
72 pin 128mb
L7105
L-71051-0C
72 simm edo dram 64mb
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PC100
Abstract: PC133 54-PIN HYM71V653201
Text: PLL INTEL 168Pin Reg. DIMM W/PLL RCC 168 Pin Reg DIMM W/PLL JEDEC 200Pin Reg. DIMM W/PLL 144Pin SO , HYM71V75S3201TN HYM71V73C3201TN GMM27333230ATG GMM27333230ANTG HYM71V32S755AT4 HYM71V32C735AT4 144Pin SO DIMM BOOK , . 64Mx72 Sync. EC 168Pin 256MB 32Mx72 Sync. EC Registered DIMM 512MB 64Mx72 Sync. EC 1GB 28M x l i Sync. EC 144Pin 128MB 16Mx64 Sync. SO DIMM 256MB 32Mx64 Sync. 15 , SDRAMS 71 : 126Mb SDRAMs 72 :256Mb SDRAMs 75 : 512Mb SDRAMs 7G : 1Gb SDRAMs K H P S : : : : PC133 PC133
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
PC100
54-PIN
HYM71V653201
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2002 - DDR RAM 512M
Abstract: ELPIDA mobile DDR TSOP II elpida ect-ts-1942 Elpida Memory DDR2-533 DDR2-667 DDR2-800 PC2-5300 PC2-6400
Text: : 256Mbit D: 512Mbit S: 144-pin SO DIMM D: 144-pin SO DIMM (TCP) M: Micro DIMM Mono Organization 2 , Module Outline F: 184-pin DIMM N: 184-pin DIMM (TCP) S: 200-pin SO DIMM D: 200-pin SO DIMM (TCP) R: 200-pin SO DIMM (sTSOP) Mono Organization 4: x4 8: x8 6: x16 ECT-TS-1942 July, 2006 Part , Density / Bank 25: 256Mb / 4-bank 51: 512Mb / 4-bank 11: 1Gb / 8-bank Package SE: FBGA SK: FBGA , Density / Bank 25: 256M / 1-rank 26: 256M / 2-rank 51: 512M / 1-rank 52: 512M / 2-rank 10: 1GB / 1
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ECT-TS-1942
1200MHz
184-pin
160-pin
232-pin
1066MHz
DDR RAM 512M
ELPIDA mobile DDR
TSOP II elpida
Elpida Memory
DDR2-533
DDR2-667
DDR2-800
PC2-5300
PC2-6400
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2001 - ELPIDA
Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Text: . 7 7. SDRAM Module 144-pin SO DIMM , 7 DRAM Selection Guide 7. SDRAM Module 144-pin SO DIMM Density 512MB Organization , . 9 10. DDR SDRAM Module 200-pin SO DIMM , (2-2-2) 2 128M x 72 2 Speed Grade PC133 (3-3-3) 1GB 256M x 72 Grade (CL-tRCD-tRP , product status. *2: Not to recommend for new design 10. DDR SDRAM Module 200-pin SO DIMM Density
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E0226E80
M01E0107
ELPIDA
EDS5104ABTA
EDS5108ABTA
PC800
ELPIDA DRAM selection guide
1gb 144pin pc133 so dimm
200pin SO DIMM
sdram elpida
EDS5116ABTA
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1gb pc133 SDRAM DIMM 144pin
Abstract: 54-PIN PC100 gm72v66841
Text: : STACKED (A Type) POWER CONSUMPTION NONE : Normal Power NONE 168pin Unbuffered DIMM JEDEC 168Pin Reg. DIMM W/PLL R INTEL 168Pin Reg. DIMM W/O PLL E INTEL 168Pin Reg. DIMM W/PLL S RCC 168Pin Reg DIMM W/PLL C JEDEC 200Pin Reg. DIMM W/PLL D M W 144Pin SO DIMM SUN 232Pin Reg. DIMM W/PLL L : Low Power DIE , : 1Gb SDRAMs PC133 CL2 PC133 CL3 PC100 CL2 PC100 CL3 MODULE REVISION NONE : ORIGINAL M : 1st REV , Temperature E: Extended Temperature SPEED 200MHz 183MHz 166MHz 143MHz PC133 ,CL2 PC133.CL3 125MHz PC100, CL2
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200MHz
183MHz
166MHz
143MHz
PC133
125MHz
PC100,
100MHz
1gb pc133 SDRAM DIMM 144pin
54-PIN
PC100
gm72v66841
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2000 - L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: ) 64MSD(x8) 64MSD(x8) 64MSD(x8) 128MSD(x8) 128MSD(x8) 168pin SDRAM Unbuffered DIMM 64MB 144pin , ) PC133 ,PC100 8M x 8 (LVTTL) PC133 ,PC100 4M x 16 (LVTTL) PC133 ,PC100 32M x 4 (LVTTL) PC133 ,PC100 16M x 8 (LVTTL) PC133 ,PC100 8M x 16 (LVTTL) PC133 ,PC100 64M x 4 (LVTTL) PC133 ,PC100 32M x 8 (LVTTL) PC133 ,PC100 16M x 16 (LVTTL) PC133 ,PC100 Note) S: Self refresh, Extended refresh MITSUBISHI ELECTRIC L , 7 6 6,7 - - NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW Intel PC100 IBM PC133 Intel
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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2000 - sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: option for Flexible Production - SDR: PC133 [CL=3 (3-3-3)] support - SDR: High-density 1GB DIMMs - DDR , (4K Ref) EDO 16M x 4 (LVTTL) PC133 ,PC100 8M x 8 (LVTTL) PC133 ,PC100 4M x 16 (LVTTL) PC133 ,PC100 32M x 4 (LVTTL) PC133 ,PC100 16M x 8 (LVTTL) PC133 ,PC100 8M x 16 (LVTTL) PC133 ,PC100 64M x 4 (LVTTL) PC133 ,PC100 32M x 8 (LVTTL) PC133 ,PC100 16M x 16 (LVTTL) PC133 ,PC100 Note) S: Self refresh, Extended , Remark 64MSD(x8) 64MSD(x8) 64MSD(x8) 64MSD(x8) 128MSD(x8) 128MSD(x8) 168pin SDRAM Unbuffered DIMM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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NT256D64S88B1G-6K
Abstract: NT56V1616A0T-7 PC2100 NT256D64SH8B0GM-75B PC2700-2533 NT512D64S8HB1G-6K NT256D64S88AMGM-7K 128M DDR Infineon SODIMM NT5SV4M16DT-6K NT5SV16M8CT-7K
Text: 256 = 256MB 512 = 512MB 1G = 1GB SDRAM 6K=PC166-3-3-3 7K= PC133 -2-2-2 75B= PC133 -3-3-3 8B , are designed to meet PC100, PC133 , or DDR266, DDR333 specifications. Thanks to strict quality , Now Now 64Mb x 16 NT5SV4M16DT-6K/7K/7 3.3V 4K 54-pin TSOP(II) PC166, PC133 , 3.3V 8K PC133 , PC100 54-pin TSOP(II) 8K PC133 , PC100 x8 NT5SV32M8AW-7K/75B/8B x , -pin TSOP(II) 8K PC133 60-pin CSP x 16 NT5SV16M16BW-7K/75B Note>: -6K = 166MHz@CL3 & 133MHz
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1998 - PC133 registered reference design
Abstract: 512MB 8Mx32 DDR DRAM HM5225645FBP Hitachi DSA002714
Text: -F HB52E168EN -F HB52F168EN -F HB52RD168DB 144-pin SO DIMM -F HB56UW3272ETK -F HB52R329E22 168-pin DIMM -F HB52RF329E2 -F HB54A2569F1 184-pin DIMM -10B HB52RD328DC 144-pin SO DIMM -F HB52E649E12 -B 168 , equipment or medical equipment for life support. 4. Design your application so that the product is used , measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily , ) 256MB SDRAM DDR SDRAM 32Mx64 SDRAM SDRAM 512MB 64Mx72 (ECC) SDRAM DDR SDRAM SDRAM 1GB 128Mx72 (ECC
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HM5225645F-B60
HM5225325F-B60
64-bit
32-bit
PC/100
ADE-203-1014C
HM5225645F
256-Mbit
1048576-word
PC133 registered reference design
512MB 8Mx32 DDR DRAM
HM5225645FBP
Hitachi DSA002714
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SL72G8P128M8H-A75AV
Abstract: 144-Pin Unbuffered SDRAM SO-DIMM PC133 IC SDA 2001 bcd to hex
Text: SL72G8P128M8H-A75AV Advanced 128M X 72 Bits ( 1GB ) 144-Pin Unbuffered SDRAM SO-DIMM with ECC ( PC133 ) FEATURES GENERAL DESCRIPTION · The SimpleTech SL72G8P128M8H-A75AV is a 128M x 72 bits , · · · · PC133 Compliant (tCYC=7.5ns@CL=3) (see Ordering Information for options) Burst , The module consists of eighteen IC Towers (stacks of two SDRAMs) mounted on a 144-pin glass epoxy , mounting into 144-pin SO-DIMM edge connector sockets keyed for 3.3V. ORDERING INFORMATION See
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SL72G8P128M8H-A75AV
144-Pin
PC133)
SL72G8P128M8H-A75AV
PC133
cycles/64ms
100MHz
100MHz
144-Pin Unbuffered SDRAM SO-DIMM PC133
IC SDA 2001
bcd to hex
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2012 - samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: Registered DIMM 63: x63 PC100 / PC133 μSODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 , REGISTERED MODULES Density Voltage Organization Part Number Composition Compliance 1GB M393B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9 Lead Free & Halogen Free, Flip Chip 1066/1333/1600/1866 1 Now M393B5673GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 18 Lead Free & Halogen
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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1gb pc133 SDRAM DIMM 144pin
Abstract: SL72G8T128M8H-A75AV
Text: Advanced SL72G8T128M8H-A75AV 128M X 72 Bits ( 1GB ) 144-Pin SDRAM SO-DIMM ( PC133 ) FEATURES , RAM (SDRAM) Small-Outline Dual Inline Memory Module (SO-DIMM). · · · · · · · PC133 , IC Towers (stack of two SDRAMs) mounted on a 144-pin glass epoxy substrate. Each IC Tower consists , from one clock input. The module has gold edge connections and is intended for mounting into 144-pin , Ordering Information for PC133 performance options. PC133 133MHz CL SL72G8T128M8H-A75AV 3clks
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SL72G8T128M8H-A75AV
144-Pin
PC133)
SL72G8T128M8H-A75AV
PC133
cycles/64ms
bits15-8)
bits23-16)
100MHz
1gb pc133 SDRAM DIMM 144pin
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2001 - PC133 registered reference design
Abstract: R1A12
Text: 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 General Description The , 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 PIN FUNCTION DESCRIPTION Pin A0 , : Jim Walker Page 3 of 11 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4 , Walker Page 4 of 11 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 SERIAL , : Jim Walker Page 7 of 11 1GB PC133 ECC REGISTERED SYNCHRONOUS DRAM DIMM MT128722R8SN4-3226 DC
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PC133
MT128722R8SN4-3226
MT128722R8SN4-3226
72bit
400mil
459-2884Website:
PS001259
PC133 registered reference design
R1A12
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2012 - K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: : SODIMM 3. Data bits 12: x72 184pin Low Profile Registered DIMM 63: x63 PC100/ PC133 μSODIMM with SPD for 144pin 64: x64 PC100/ PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 184pin Unbuffered DIMM 70: x64 200pin , DIMM 95: x72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133 ) 4. DRAM Component Type , Density Voltage Organization Part Number Composition Compliance 1GB M393B2873GB0-C(F8/H9/K0/MA
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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2009 - K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Registered DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 184pin , Part Number Composition Compliance Speed (Mbps) Banks 1GB 128Mx72 M393B2873DZ1-C(F7/F8/H9) 1Gb (128M x8)*9 RoHS 800/1066/1333 1 2GB 256Mx72 M393B5673DZ1-C(F7/F8/H9) 1Gb (128M x8)*18 RoHS 800/1066/1333 2 2GB 256Mx72 M393B5670DZ1-C(F7/F8/H9
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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2004 - 512m pc133 SDRAM DIMM
Abstract: TSOP 66 Package TSOP 54 Package DIMM DDR400 PC3200 1 gb ddr2 ram DDR400 infineon HYF33DS512800ATC 16M x 16 DDR TSOP-66 P-TSOPI-48 infineon twinflash
Text: DIMM (168-pin) and SO-DIMM ( 144-pin ) HYS 64 V 32 2 2 0 GU L -6 -A , ) 2-2-2) Unbuffered 168-pin DIMM Registered 168-pin DIMM Registered 168-pin DIMM (FBGA-based) 144-pin Small Outline DIMM (SO-DIMM) 144-pin SO-DIMM (FBGA-based) = One Memory Module Rank = Two Memory , Unbuffered DIMM supplier, Infineon continues to 4 GB DDR2 Registered DIMM expand its portfolio with , / PC133 2-2-2 DDR266 2-2-2 DDR266B 2.5-3-3/ PC133 3-3-3 DDR200 2-2-2/PC100 2-2-2 Contains Lead
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DDR400
PC3200)
B166-H8399-X-X-7600
512m pc133 SDRAM DIMM
TSOP 66 Package
TSOP 54 Package
DIMM DDR400 PC3200
1 gb ddr2 ram
DDR400 infineon
HYF33DS512800ATC
16M x 16 DDR TSOP-66
P-TSOPI-48
infineon twinflash
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P16C2510
Abstract: P16C2509-133 P16C2510-133 F2835 P16C2509 P174AVC PC133SUP1 PC133 registered reference design STK+4133+II
Text: the PC133 DIMM net models (avail. from IBM and others) - prior to sampling: Timing budget defined in , can't afford bad press! Support chip specifications need to be consistent with the PC133 DIMM Design , IBM PC133 Support Chip Status PC133 Support Chip Status PC133SUP1 REV1 1 IBM , 256MB 512MB 512MB 1GB F2510 " " " " " F' 2835 AVC'835 F' 2835 AVC'835 F'2835 AVC , TSOJ 256Mb Stk 1GB F2510 " AVC'835 2 18 PC133SUP1 REV1 3 Key Electrical
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PC133
PC133SUP1
128Mb
256Mb
F2509
F2835
P16C2510
P16C2509-133
P16C2510-133
F2835
P16C2509
P174AVC
PC133SUP1
PC133 registered reference design
STK+4133+II
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2010 - K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: DIMM 63: x63 PC100 / PC133 SODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 184pin , ) Ranks Production 1GB 1.5V 128Mx72 M393B2873FH0-C(F8/H9/K0*)(04/05) 1Gb (128M x8) * 9 , *)(04/05) 1Gb (128M x8) * 18 Lead Free & Halogen Free 1066/1333 2 Now M393B5670FH0-C(F8/H9/K0*)(04/05) 1Gb (256M x4) * 18 Lead Free & Halogen Free 1066/1333 1 Now
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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2005 - b1a12
Abstract: B1A10 K4S1G0632D K4S510832d K4S1G0632 B1A0
Text: is based on JEDEC PC133 Specification Rev. 1.0 November 2005 1GB , 2GB Registered DIMM SDRAM , 1GB , 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on , ) .21 Rev. 1.0 November 2005 1GB , 2GB Registered DIMM Revision History Revision 0.0 1.0 Month , 1GB , 2GB Registered DIMM 168Pin Registered DIMM based on 512Mb D-die (x4, x8) 1.0 Ordering , Pb-Free package RoHS compliant · · · · Rev. 1.0 November 2005 1GB , 2GB Registered DIMM 4.0 Pin
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168pin
512Mb
medic250
K4S1G0632D
256Mx4
PC133
b1a12
B1A10
K4S510832d
K4S1G0632
B1A0
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2011 - K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Registered DIMM 63: x63 PC100 / PC133 μSODIMM with SPD for 144pin 64: x64 PC100 / PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x64 Unbuffered DIMM with SPD for 144pin /168pin (Intel/JEDEC) 68: x64 , Organization Part Number 1GB 1.5V 128Mx72 Composition Compliance Speed (Mbps) Ranks Production M393B2873FH0-C(F8/H9/K0)(04/05) 1Gb (128M x8) * 9 Lead Free & Halogen Free 1066/1333/1600 1 Now M393B2873GB0-C(F8/H9/K0/MA)(08/09) 1Gb (128M x8) * 9 Lead Free & Halogen Free
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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2001 - PC2100
Abstract: 512MB PC2100 DDR DDR DIMM SPD JEDEC infineon ddr numbering samsung dimm 128mb pc100 32mx64 HD41808U4SA HD51816U4SA infineon ddr name 128M DDR Infineon SODIMM
Text: 1GB , using x4, x8 or x16 devices. HCD DDR DIMM Product Guide *See Ordering Information for , HCD DDR DIMM Products with x4, x8 and x16 Devices DDR DIMM modules (registered & unbuffered , complete line of JEDEC compliant DDR DIMM and SO-DIMM products in both PC1600 and PC2100 speed grades , second at 266MHz as compared to mainstream PC133 (SDRAM) modules, which offer a performance of 1.06GB , 1GB 1GB HD62818R8S2 HD72436R8SA HD72436R8S2 Non PC2100 128MB HE41604U4SA Non ECC
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PC1600
PC2100
64-bit
266MHz
PC133
p125MHz
100MHz
83MHz
512MB PC2100 DDR
DDR DIMM SPD JEDEC
infineon ddr numbering
samsung dimm 128mb pc100 32mx64
HD41808U4SA
HD51816U4SA
infineon ddr name
128M DDR Infineon SODIMM
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2004 - b1a12
Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
Text: JEDEC PC133 Specification Rev. 1.0 January 2004 512MB, 1GB , 2GB Registered DIMM SDRAM , module is based on JEDEC PC133 Specification Rev. 1.0 January 2004 512MB, 1GB , 2GB Registered DIMM , 512MB, 1GB , 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based , January 2004 512MB, 1GB , 2GB Registered DIMM SDRAM 168Pin Registered DIMM based on 512Mb B-die , presence detect with EEPROM Rev. 1.0 January 2004 512MB, 1GB , 2GB Registered DIMM SDRAM PIN
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512MB,
168pin
512Mb
72-bit
M390S6553BT1-C7A
512MB
b1a12
K4S1G0632B
PC133 SDRAM registered DIMM 512MB samsung
M390S2950BTU-C7A
M390S2953BT1-C7A
M390S5658BT1-C7A
M390S5658BTU-C7A
M390S6553BT1-C7A
M390S6553BTU-C7A
K4S510832
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2004 - b1a12
Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
Text: JEDEC PC133 Specification Rev. 1.2 February 2004 256MB, 512MB, 1GB Registered DIMM SDRAM , 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module , , 512MB, 1GB Registered DIMM SDRAM Revision History Revision 0.0 (June, 2003) - First release , February 2004 256MB, 512MB, 1GB Registered DIMM SDRAM PIN CONFIGURATIONS (Front side/back side , 2004 256MB, 512MB, 1GB Registered DIMM SDRAM 256MB, 32Mx72 ECC Module (M390S3253ET1
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Original
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PDF
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256MB,
512MB,
168pin
256Mb
72-bit
b1a12
PC133 SDRAM registered DIMM 512MB samsung
pc133 sdram 512mb ECC unbuffered
K4S560832E
M390S2858ET1-C7A
M390S2858ETU-C7A
M390S3253ET1-C7A
M390S3253ETU-C7A
M390S6450ET1-C7A
M390S6450ETU-C7A
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2006 - Not Available
Abstract: No abstract text available
Text: is based on JEDEC PC133 Specification Rev. 1.6 Oct. 2006 256MB, 512MB, 1GB Registered DIMM , is based on JEDEC PC133 Specification Rev. 1.6 Oct. 2006 256MB, 512MB, 1GB Registered DIMM , is based on JEDEC PC133 Specification Rev. 1.6 Oct. 2006 256MB, 512MB, 1GB Registered DIMM , 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module , Oct. 2006 256MB, 512MB, 1GB Registered DIMM 168Pin Registered DIMM based on 256Mb E-die (x4, x8
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Original
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PDF
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256MB,
512MB,
168pin
256Mb
72-bit
K4S510632E
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2000 - sagami
Abstract: m5m5v108c SRAM QFP 64MB cmos dram 8m x 16 128k x8 SRAM TSOP 8M X 16 SDRAM prx usa Mitsubishi ECL Memory
Text: Ref) FPM 4M x 16 (4K Ref) EDO 16M x 4 (LVTTL) PC133 ,PC100 8M x 8 (LVTTL) PC133 ,PC100 4M x 16 (LVTTL) PC133 ,PC100 32M x 4 (LVTTL) PC133 ,PC100 16M x 8 (LVTTL) PC133 ,PC100 8M x 16 (LVTTL) PC133 ,PC100 64M x 4 (LVTTL) PC133 ,PC100 32M x 8 (LVTTL) PC133 ,PC100 16M x 16 (LVTTL) PC133 ,PC100 Note) S: Self refresh , Remark 64MSD(x8) 64MSD(x8) 64MSD(x8) 64MSD(x8) 128MSD(x8) 128MSD(x8) 168pin SDRAM Unbuffered DIMM 64MB 144pin SDRAM 8byte S.O.DIMM 168pin SDRAM RegisteredDIMM 64MB MH8S72DBFD MH8S72DCFD 7 6
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Original
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PDF
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L-11003-0I
sagami
m5m5v108c
SRAM QFP 64MB
cmos dram 8m x 16
128k x8 SRAM TSOP
8M X 16 SDRAM
prx usa
Mitsubishi ECL Memory
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