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1SV270 datasheet (11)

Part Manufacturer Description Type PDF
1SV270 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original PDF
1SV270 Toshiba variable capacitance diode Original PDF
1SV270 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original PDF
1SV270 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SV270 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
1SV270 Toshiba Variable Capacitance Diode Silicon Epitaxial Planar Type Scan PDF
1SV270 Toshiba Variable capacitance silicon diode using as VCO for UHF band radio Scan PDF
1SV270 Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) Scan PDF
1SV270TPH3 Toshiba 1SV270TPH3 - Diode VAR Cap Single 10V 15pF 2-Pin USC T/R Original PDF
1SV270(TPH3) Toshiba DIODE VAR CAP SINGLE 10V 15PF 2(1-1E1A) T/R Scan PDF
1SV270TPH3F Toshiba 1SV270 - Varactor Diodes 10V C1=15-17pF Original PDF

1SV270 Datasheets Context Search

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2003 - 1SV270

Abstract: No abstract text available
Text: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio · Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol , V, f = 470 MHz Marking 1 2003-04-02 (Note) 1SV270 Note: d C = 2 C (Ta) - C (25) ´ 100 (%) C (25) 2003-04-02 1SV270 RESTRICTIONS ON PRODUCT USE 000707EAA ·


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PDF 1SV270 1SV270
1SV270

Abstract: DIODE T6 marking
Text: 1SV270 SILICON EPITAXIAL PLANAR DIODE VARIABLE CAPACITANCE DIODE Features · High capacitance ratio · Small package · Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T6 Applications · VCO for UHF band radio Absolute Maximum Ratings (Ta = 25 OC , Code: 724) Dated : 01/09/2006 1SV270 CV - VR Reverse Current IR (A) 10 5 3 12 , Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1SV270 PACKAGE OUTLINE Plastic


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PDF 1SV270 OD-323 OD-323 1SV270 DIODE T6 marking
1SV270

Abstract: 470MHZ
Text: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN 1 FEATURES High capacitance ratio: C1V/C4V = 2.0 (Typ.) Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28 (Typ.) Top View Marking Code , ) ® Dated : 30/08/2004 1SV270 CV - VR Reverse Current IR (A) 10 5 3 0 4 12 , , Stock Code: 724) ® Dated : 30/08/2004 1SV270 PACKAGE OUTLINE SOD-323 A UNIT mm A


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PDF 1SV270 OD-323 OD-323 1SV270 470MHZ
1SV270

Abstract: No abstract text available
Text: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV270 VCO FOR UHF BAND RADIO Unit in mm • High Capacitance Ratio • Low Series Resistance • Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.280 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55-125 °C JEDEC_â , subject to change without notice. 1997-05-08 1/2 TOSHIBA 1SV270 Cy - Vr IR - Vr f= 1MHz Ta = 25Â


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PDF 1SV270
1SV270

Abstract: No abstract text available
Text: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio · Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Symbol , Marking 1 2003-04-02 (Note) 1SV270 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2003-04-02 1SV270 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 1SV270 1SV270
2007 - 1SV270

Abstract: No abstract text available
Text: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics , Marking 1 2007-11-01 (Note) 1SV270 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2007-11-01 1SV270 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained


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PDF 1SV270 1SV270
LS 1017

Abstract: MARKING EE 1SV270 303E 27c diode toshiba
Text: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 0 VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.28ß (Typ.) MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS , /3 TOSHIBA 1SV270 Cy - Vr Ir - Vr f= 1MHz Ta = 25 , °C / / / 0L 100 300 500 1000 2000 FREQUENCY f (MHz) 2000-09-11 2/3 TOSHIBA 1SV270 SPICE PARAMETER


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PDF 1SV270 LS 1017 MARKING EE 1SV270 303E 27c diode toshiba
C2580

Abstract: 1SV270
Text: 1SV270 1SV270 UHF VCO : mm · : C1V/C4V = 2.0 () · : rs = 0.28 () · (Ta = 25°C) VR 10 V Tj 125 °C Tstg -55~125 °C : JEDEC (//) (/ JEITA , rs C1V/C4V VR = 1 V, f = 470 MHz pF TF 1 2007-11-01 1SV270 CV - VR , ) × 100 (%) C (25) 80 (°C) 2 2007-11-01 1SV270 · · ·


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PDF 1SV270 C2580 1SV270
2009 - 1SV270

Abstract: No abstract text available
Text: 1SV270 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV270 VCO for UHF Band Radio Unit: mm · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.28 (typ.) · Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics , Marking 1 2007-11-01 (Note) 1SV270 Note: C = 2 C (Ta) - C (25) × 100 (%) C (25) 2007-11-01 1SV270 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and


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PDF 1SV270 1SV270
1SV270

Abstract: 470MHZ
Text: 1SV270 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO PINNING DESCRIPTION PIN 1 FEATURES High capacitance ratio: C1V/C4V = 2.0 (Typ.) Cathode 2 Anode 2 1 T6 Small package Low series resistance : rs = 0.28 (Typ.) Top View Marking Code , ) Dated : 30/08/2004 1SV270 CV - VR Reverse Current IR (A) 10 5 3 0 4 12 , Code: 724) Dated : 30/08/2004 1SV270 PACKAGE OUTLINE SOD-323 A UNIT mm A b c


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PDF 1SV270 OD-323 OD-323 1SV270 470MHZ
Not Available

Abstract: No abstract text available
Text: TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV270 1 SV270 VCO FOR UHF BAND RADIO U n it in mm · · · High Capacitance Ratio Low Series Resistance Small Package : C1V/C4V = 2.0 (Typ.) : rs = 0.280 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 10 , to change w ith o u t notice. # # 1997-05-08 1/2 TO SHIBA 1SV270 Cy - Vr IR


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PDF 1SV270 SV270
1SV270

Abstract: No abstract text available
Text: TOSHIBA 1SV270 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 7 0 VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.28ß (Typ.) MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction , /2 TOSHIBA 1SV270 Cy - Vr Ir - Vr f= 1MHz Ta = 25Â


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PDF 1SV270 470MHz 1SV270
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV270 1 <;v?7n VCO FOR UHF BAND RADIO · · · High Capacitance Ratio Low Series Resistance Small Package : CIV / C4V = 2.0 (Typ.) : rs = 0.28ü (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range T SYMBOL VR RATING 10 125 - 5 5 -125 UNIT V °C °C , subject to change without notice. 1997 05-08 - 1/2 TOSHIBA 1SV270 Cv - Vr lOOp IR


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PDF 1SV270
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV270 VCO FOR UHF BAND RADIO 1 SV270 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · High Capacitance Ratio Low Series Resistance Small Package : C1V/C4V = 2.0(Typ.) : rs = 0.28Ü (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC , 1SV270 C y - Vr Ir - VR > o w ü Z; o < o g á REVERSE VOLTAGE Vr (V) rs - , wo ¡5 g O < o AMBIENT TEMPERATURE Ta (°C) 200 0 - 02-29 2/3 TOSHIBA 1SV270


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PDF 1SV270 SV270 470MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV270 VCO FOR UHF BAND RADIO 1 SV270 SILICON EPITAXIAL PLANAR TYPE U n i t in m m · High Capacitance Ratio · Low Series Resistance · Small Package : C1V/C4V = 2.0(Typ.) : rs = 0.280 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr Tj Tstg RATING 10 , h o u t n o tic e . 237 TOSHIBA 1SV270 Cv - vr Ir - VR o ü > w O < o


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PDF 1SV270 SV270
Not Available

Abstract: No abstract text available
Text: Product specification 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit V Reverse Voltage VR 10 Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range Electrical C


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PDF 1SV270 OD-323
1SV270

Abstract: LS 1017
Text: 1SV270 SPICE PARAMETER 20010110 SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS(A) ,RS() ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz3 GHz VR = 1V 4V REVERSE VOLTAGE RANGE: AMBIENT TEMPERATURE: Ta = 27 PARAMETER IS = 6.929E-16 N = 1.017 BV = 10 IBV = 1.00E-04 RS = 0.28 CJ0 = 2.303E-11 VJ = 2.637 M = 1.181 -Ls = 1.00E-09 VARICAP Note 1: These parameters show all die


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PDF 1SV270 929E-16 00E-04 303E-11 00E-09 LS 1017
1SV270

Abstract: marking tf
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV270 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0(Typ.) Low Series Resistance:rs = 0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit V Reverse Voltage VR 10 Junction Temperature Tj 125 T stg -55 to +125 Storage Temperature Range


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PDF 1SV270 OD-323 1SV270 marking tf
Not Available

Abstract: No abstract text available
Text: 1SV270 VCO FOR UHF B A N D R A D IO SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE Unit in mm : C IV /C 4 V = 2.0 (Typ.) : rs = 0.281 1 (Typ.) I 0 L' I Li!) Il l · · · High Capacitance Ratio Low Series Resistance Small Package jX -> ` « M A X IM U M R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Tem perature Storage Tem perature Range SYMBOL Vr Tj TstB RATING 10 125 -55 -1 2 5 UNIT V °C °C JEDEC E1AJ TOSHIBA 1-1E1A ELECTRICAL CHARACTERISTICS (Ta =


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PDF 1SV270
2005 - TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
Text: 214 HN1V01H 1V01H 290 1SV270 TF 216 HN1V02H 1V02H 293 1SV271 TG , 1SV279 1SV230 1SV286 1SV239 1SV280 1SV245 1SV309 1SV270 1SV281 1SV276 , 1SV280 15 3 15 3.8~4.7 2 1.5~2.0 10 2.0 0.44 1 470 ESC 1SV270 , ) 1SV322/1SV323 for L Band VCO 1SV276/1SV284 5 1SV304/1SV305 1SV270 /1SV281 1SV310/1SV311 3 , fSC 1SV229 1SV270 1SV276 1SV304 1SV310 1SV279 1SV281 1SV284 1SV305 1SV311 JDV2S06S


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
Text: 1SV270 1SV271 1SV273 1SV274 1SV275 1SV276 1SV277 Marking T6 T7 V3 TA T9 V4 T8 T7 TA T9 BB TB TC V5 T3 BE


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PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: Package Code URP Diodes for high frequency TOSHIBA 1SV270 MATSUSHITA NEC SONY Others


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PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
3120 tuner

Abstract: C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
Text: M ixer SBD Tw in Tuning 1SV186 1SV212 1SV224 1SV229 1SV230 1SV239 1SV245 * 1SV270


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PDF 3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
JDV2S31CT

Abstract: 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
Text: * Dual VCO Varicap diode USC ESC 1SV229 1SV270 1SV276 1SV304 1SV310 , 1SV279* - JDV2S41FS* - 1SV270 1SV281* - - - 1SV276 1SV284* - , JDV2S41FS* VHF/UHF VCO fSC 1SV270 USC 1SV281 1SV276 1SV284 1SV239 10 10 3 3 10


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PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
FC54M

Abstract: FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
Text: HVU362 HVU369B HVC350B HVC351 HVC369B MA342/367 1SV230/224 1SV270 1SV257/229 1SV163 -


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PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
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