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1SV252(TE85L,F) Toshiba America Electronic Components Chip1Stop 3,600 $2.63 $2.15

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1SV252 datasheet (11)

Part Manufacturer Description Type PDF
1SV252 Kexin VHF UHF Band RF Attenuator Applications Original PDF
1SV252 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
1SV252 TY Semiconductor VHF UHF Band RF Attenuator Applications - SOT-323 Original PDF
1SV252 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SV252 Others High Frequency Device Data Book (Japanese) Scan PDF
1SV252 Toshiba Diode Silicon Epitaxial PIN Type Scan PDF
1SV252 Toshiba Silicon diode for VHF-UHF band RF attenuator applications Scan PDF
1SV252TE85L Toshiba 1SV252 - DIODE 50 V, SILICON, PIN DIODE, PIN Diode Original PDF
1SV252(TE85L) Toshiba DIODE PINATTENUATOR 50V 3(1-2P1C) T/R Original PDF
1SV252(TE85L,F) Toshiba 1SV252 - DIODE VARACTOR DUAL 50V SC-70 Original PDF
1SV252TE85R Toshiba 1SV252 - DIODE 50 V, SILICON, PIN DIODE, PIN Diode Original PDF

1SV252 Datasheets Context Search

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1SV252

Abstract: No abstract text available
Text: 1SV252 PIN 1SV252 VHFUHF AGC · : mm · · : rs = 3.5 : CT = 0.2 pF () (Ta = 25°C) VR 50 V IF 50 mA Tj 125 °C Tstg -55~125 °C : JEDEC , B E 1 2007-11-01 1SV252 CT ­ V R rs ­ IF 2 2k 1k Ta = 25°C rs , IF (A) 2007-11-01 1SV252 · · · · ""


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PDF 1SV252 1SV252
diode bridge toshiba

Abstract: 1SV252 TOSHIBA DIODE
Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range JEDEC JEITA TOSHIBA 1-2P1C Weight: 0.006 g , with capacitance bridge. Marking 1 2003-03-24 1SV252 2 2003-03-24 1SV252


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PDF 1SV252 SC-70 diode bridge toshiba 1SV252 TOSHIBA DIODE
2007 - Not Available

Abstract: No abstract text available
Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C JEDEC , : CT is measured by 3 terminal method with capacitance bridge. Marking 1 2003-03-24 1SV252 2 2003-03-24 1SV252 RESTRICTIONS ON PRODUCT USE · The information contained herein is


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PDF 1SV252 SC-70
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL PIN TYPE 1SV252 U nit in mm V H F - UHF B A N D RF A TTEN U A TO R APPLICATIONS. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If Tj Tstg RATING 50 50 125 -5 5 -1 2 5 UNIT V mA °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Reverse Current , capacitance bridge. M a rk in g Type Name S BE - S ' 1259 1SV252 TOTAL CAPACITANCE


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PDF 1SV252 100MHz
2003 - diode bridge toshiba

Abstract: 1SV252
Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range JEDEC JEITA TOSHIBA 1-2P1C Weight: 0.006 g , method with capacitance bridge. Marking 1 2003-03-24 1SV252 2 2003-03-24 1SV252


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PDF 1SV252 SC-70 diode bridge toshiba 1SV252
2007 - TOSHIBA Semiconductor Reliability Handbook derating concept and method

Abstract: 1SV252
Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range Note: Using continuously under heavy , with capacitance bridge. Marking 1 2007-11-01 1SV252 2 2007-11-01 1SV252


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PDF 1SV252 TOSHIBA Semiconductor Reliability Handbook derating concept and method 1SV252
2009 - 1SV252

Abstract: No abstract text available
Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range Note: Using continuously under heavy , with capacitance bridge. Marking 1 2007-11-01 1SV252 2 2007-11-01 1SV252


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PDF 1SV252 1SV252
diode bridge toshiba

Abstract: 1SV252
Text: TOSHIBA 1SV252 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 2 5 2 VHF-UHF BAND RF ATTENUATOR APPLICATIONS. Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 50 V Forward Current IF 50 mA Junction Temperature Tj 125 °C Storage Temperature Range TstK -55-125 °C 2.1 ±0.1 1. ANODE 2 2. CATHODE 1 3. ANODE 1/CATHODE 2 JEDEC EIAJ SC , 1SV252 CT - VR rs - if f= 1MHz Ta = 25Â


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PDF 1SV252 SC-70 100ju 300ju diode bridge toshiba 1SV252
diode bridge toshiba

Abstract: 1SV252 aml 10 series
Text: TOSHIBA 1SV252 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 2 5 2 VHF-UHF BAND RF ATTENUATOR APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 50 V Forward Current IF 50 mA Junction Temperature Tj 125 °C Storage Temperature Range Tstg -55-125 °C 2.1 ±0.1 2 -a 1.25 + 0.1 oo + I 1. ANODE 2 2. CATHODE 1 3. ANODE 1 /CATHODE 2 , without notice. 2000-10-16 1/2 TOSHIBA 1SV252 CT - VR rs - if f = 1 MHz Ta = 25Â


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PDF 1SV252 SC-70 100ju 300ju diode bridge toshiba 1SV252 aml 10 series
Not Available

Abstract: No abstract text available
Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125 °C Storage temperature range JEDEC ― JEITA TOSHIBA 1-2P1C Weight: 0.006 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics SC-70 Symbol


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PDF 1SV252 SC-70
Not Available

Abstract: No abstract text available
Text: 1SV252 SILICON EPITAXIAL PIN TYPE DIODE V H F -U H F B A N D RF A T T E N U A T O R A PPLIC A TIO N S. U n i t in m m 1.2 5 ¿ 0.1 2.1 ± 0.1 2 -E& M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range SYMBOL VR Ip Tj Tstg RATING 50 50 125 -5 5 -1 2 5 UNIT V mA °C °C CATHODE 1 ANODE 1 /CA TH O D E 2 JEDEC , o ho TOTAL CAPACITANCE C t 1SV252


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PDF 1SV252 SC-70 100MHz
smd rf transistor marking

Abstract: 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols
Text: Diodes SMD Type VHF~UHF Band RF Attenuator Applications 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Sym bol Rating Unit VR Reverse voltage 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25 Param eter Sym bol Reverse Voltage VR Reverse Current IR Conditions Min I R = 10 50 A Typ Max Unit V V R = 50 V 0.1


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PDF 1SV252 smd rf transistor marking 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols
3120 tuner

Abstract: C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
Text: Attinuater, Switch PIN Single Tw in Single 1SV237 1SV128 1SV172 1SS154 1SS271 1SS295 * 1SV252 1SS239 , Single 1 Tw in [ 1SV101 1SV102 1SV149 1S V I 60 1S V I 28 1SV172 1SV252 1.8 HYBRID DEVICES


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PDF 3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
PF7A

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE 1SV252 1 SILICON EPITAXIAL PIN TYPE 51 V H F- U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYM BO L Vr IF Tj Tsts RATING 50 50 125 -5 5 -1 2 5 UNIT V mA °C °C 1. ANÜDE 2 2. CATHODE 1 3. ANODE 1 / CATHODE 2 JEDEC EIAJ SC-70 TOSHIBA 1-2P1C Weight : 0.006g ELECTRICAL CHARACTERISTICS (Ta = 25


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PDF 1SV252 SC-70 100MHz PF7A
p350j

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA DIODE 1SV252 VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 1 SV2 52 SILICON EPITAXIAL PIN TYPE 2.1 ± 0.1 Unit in mm oo 1.25Í0.1 + » -ES MAXIMUM RATINGS (Ta = 25°C) 2 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR Ip Tj Tstg RATING 50 50 125 -5 5 -1 2 5 UNIT V mA °C °C öd ^ -o + I , O O P3 < 5d 50 < SERIES RESISTANCE rs (ii) 0 1 50 O c 3 o P3 1SV252


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PDF 1SV252 SC-70 p350j
Not Available

Abstract: No abstract text available
Text: Product specification 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Sym bol Rating Unit VR Reverse voltage 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25 Param eter Sym bol Reverse Voltage VR Reverse Current IR Conditions Min I R = 10 50 A Typ Max Unit V V R = 50 V 0.1 A Forward voltage VF


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PDF 1SV252
2SC1815 2SA1015

Abstract: 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815 2SC1923
Text: * 1SV147* FM AGC ft : Diode *: Under development 1SV225* 1SV228ÍT 1SV128* 1SV172* 1SV252 * 1SV237* 2SK1875


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PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2SC2240 2sj74 2SC4667 2sk246 2sc2458 2SC1815
2005 - TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
Text: 1SV252 BE 210 1SV329 V2 286 1SV262 TD 212 1SV331 V9 288 1SV269 TE , 1SV252 1SV312 1SS154 Single 1SS315 JDH2S01T Mixer SBD 1SS271 Twin 1SS295 1SV229 , . Single 1SV128 Double 1SV172 1SV252 SMV FM8 TU6 HN1V01H AM Tuning , 50 0.1 50 0.95 50 0.25 50 4 10 100 SMQ 1SV252 50 0.1 50 , 1SV307 ESC TESC 1SV252 USQ 1SV312 JDP4P02U HN1V01H HN1V02H HN2V02H Tuning Varicap


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
Not Available

Abstract: No abstract text available
Text: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » -ES 2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR Ip Tj Tstg RATING 50 50 125 -5 5 -1 2 5 UNIT V mA °C °C , < 5d r £ O < 50 SERIES RESISTANCE rs (ii) 1SV252


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PDF 1SV252 SC-70
SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 1SS242 Am tuning varicap 4007F 1SV211 S1B66
Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER PIN Diode Single TO-92 1 SV 9 9 »NEW SM use SM Double SM Q USM TO-92 2 SC 3 8 0 T M 2 SC 94 1 T M Bi'Transistor MINI 2 SC 26 6 9 2SC2670 SM 2SC2715 2SC2716 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 IF A m p. Tuning AGC Bt-Tr MINI SM I TO-92 j RF Amp. J- FET MINI SM Tuning Varicap MINI 1SV102 1 SV149 FM , . Tuning M IX IF Amp. PIN Diode Single TO-92 1SV99 SM r use SM 1SV172 Double SM Q 1SV237 U SM 1SV252


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PDF 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 1SS242 Am tuning varicap 4007F 1SV211 S1B66
2SC2499

Abstract: 1SV252 transistor 2sc2499 2sc4200 Schottky Diode SC-62 2sa1161 NPN Transistor TO92 300ma THS117, THS119 THS126 VCEO150V
Text: attenuator Twin Single Schottky mixer 1SV99(2 lead)* 1SV128* 1SV172* 1SS 154* 1SV237* 1SV252 * 1SS239* 1SS242


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PDF 300mA 400MHz 200MHz 2SC2705 2SA1145 2SC4203 O-126 2SC3613 O-220AB T0-220 2SC2499 1SV252 transistor 2sc2499 2sc4200 Schottky Diode SC-62 2sa1161 NPN Transistor TO92 300ma THS117, THS119 THS126 VCEO150V
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: 1SV252 use 1SS314 Ultra Super M ini 1ssi 2 1SS313 Sm all Product 1SV215 1SV217 1SV231


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
Text: 1SV238 1SV239 1SV242 1SV245 1SV252 1SV254 1SV255 1SV256 1SV257 1SV258 1SV259 1SV260 1SV261 1SV262 1SV269


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PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
JDV2S31CT

Abstract: 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
Text: Dual transistor 1SV308 JDP2S04E S-Mini Dual SMQ 1SV252 USQ 1SV312 , SSM 1SV128 1SV271 1SV307 JDP2S10U* 1SV308 JDP2S04E 1SV172 1SV237 1SV252 1SV312 1SS315 , 1.5 1 100 CST2 fSC SC2 1SV237 1SV252 0.1 50 JDP3C04TU JDP3C02AU* JDP4P02AT


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PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 2SK1875 1SV271 JDP2S04E IS-136 IMT-2000 DCS1800 1SV308 1SV128
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: . 1SV242 1SV245 1SV252 HN1D01F HN1D01FU HN1D02F HN1D02FU HN1D03F HN1D03FU HN2D01F HN2D01FU HN1V01H HN1V02H


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
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