The Datasheet Archive

1SV102 datasheet (7)

Part Manufacturer Description Type PDF
1SV102 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SV102 Others High Frequency Device Data Book (Japanese) Scan PDF
1SV102 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SV102 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
1SV102 Panasonic Silicon epitaxial planar type variable capacitance diode. Scan PDF
1SV102 Toshiba Variable Capacitance Diode Silicon Epitaxial Planner Type Scan PDF
1SV102 Toshiba VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS) Scan PDF

1SV102 Datasheets Context Search

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1SV102

Abstract:
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV102 AM RADIO BAND TUNING APPLICATIONS • High Capacitance Ratio : C2V / C25V = 23 (Typ.) • High Q : Q = 400 (Typ.) • Small Package. MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING , /3 TOSHIBA 1SV102 Table 1 : Capacitance Data TEST CONDITION : f = 1 MHz, Ta = 25°C Unit: pF No , 2/3 TOSHIBA 1SV102 c - Vr Q - Vr f = 1 MHz Ta = 25Â


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PDF 1SV102 55max. 1SV102 C20V C25V
3SK73

Abstract:
Text: VCC (9 V) 10 µF 50 pF 28 k 1SV102 0.1 µF 470 k 0.1 µF *1.5 k * 0.1 µF 56 k , k 2SC2669 12 k 0.1 µF 0.1 µF 0.1 µF 0.1 µF T2 0.1 µF 1SV102 56 k C1~30 pF 56 k 1.5 k T1 1SV102 1.8 k20 pF 0.1 µF ANT 2SC2669 2SC2669 12 k 0.1 µF , 1SV102 120 IF 300 L4 L3 0.01 µF 5 pF 12 k 220 9 pF 20 pF S


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PDF 1SV160 2SC1959 2SC1815 2SC2669 1SV102 3SK73 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SC2669 2SK241-GR
Not Available

Abstract:
Text: 1SV102 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 02 Unit in mm AM RADIO BAND TUNING APPLICATIONS. 4.3 M A X. High Capacitance Ratio : C2V ! C25V = 23 (Typ.) High Q : Q = 400 (Typ.) Small Package. • • • CL551ÍAX. 4 , e w ith o u t notice. 1997 05-08 1/3 - T O SH IB A 1SV102 Table 1 : Capacitance Data , ±0.5% 1997 05-08 2/3 - 1SV102 T O SH IB A C - Vr Q - Vr REVERSE VOLTAGE VR (V) IR - V r


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PDF 1SV102 CL551Ã
4011 TOSHIBA

Abstract:
Text: | ^7250 QD0ci3tj3 1 9097250 TOSHIBA (DISCRETE/OPTO> _ 67C 09363, D J 1SV102- C - VR 500 300 H , TOSHIBA {DISCRETE/OPTO} "b? dFI^G^SQ DOOTBtil fi §~ 9097250 TOSHIBA (DISCRETE/OPTO> 67C 09361 ' " Silicon Epitaxial Planar Type • 1SV102 Variable Capacitance Diode o T-OlHI AH RADIO BAND TUNING APPLICATIONS. FEATURES: . High Capacitance Ratio : C2v/C25V=23(Typ.) . High Q : Q=400(Typ.) . , < DI SCRETE / OPTO >.67C 09362 D | -— 1SV102 Table 1 : Capacitance Data TEST CONDITION


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PDF 1SV102 C2v/C25V 4011 TOSHIBA 1SV102 25R4 C20V C25V TA510
1SV102

Abstract:
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV102 AM RADIO BAND TUNING APPLICATIONS. • High Capacitance Ratio : C2V / C25V = 23 (Typ.) • High Q :Q = 400 (Typ.) • Small Package. Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING , 1SV102 Table 1 : Capacitance Data TEST CONDITION :f=1MHz, Ta = 25°C Unit: pF No. c2v ClOV C20V C25V , 1SV102 c - Vr Q - VR f= 1MHz Ta = 25Â


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PDF 1SV102 0L55MAX. 1SV102 C20V C25V
1SV102

Abstract:
Text: TOSHIBA 1SV102 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV102 AM RADIO BAND TUNING APPLICATIONS. • High Capacitance Ratio : C2V / C25V = 23 (Typ.) • High Q :Q = 400 (Typ.) • Small Package. Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING , others. # The information contained herein is subject to change without notice. 185 TOSHIBA 1SV102 , ) (C20V) (C25V) (3) The absolute capacitance value is in ±0.5% 186 TOSHIBA 1SV102 c - Vr Q - VR


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PDF 1SV102 0L55MAX. 1SV102 C20V C25V
2SC1815 2SA1015

Abstract:
Text: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . TO-92 (SC-43) 2SC1923 RF FM Mini 2SC2668 Super Mini (SC-59) 2SC2714 USM (SC-70) 2SC4215 SSM 2SC4915 SMQ (SC-61) 3SK126 3SK160 2SK161 2SK192A 2SK241 MIX LO IF AFC RF AM 2SC941TM 2SK709 CONV & IF 2SC1815 2SC380TM 2SC941TM 2SC2670 2SK710 2SC2458 2SC2669 2SC2670 2SC2995 1SV102 * AM Tuning 1SV149* 2SC1923 2SC1923 2SC380TM 2SC2668 2SC2668 2SC2669 2SK211 2SK210 2SK302 2SC2714 2SC2714 2SC2715 1SV160* 2SC2716 2SK711


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PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2sj74 2SC2240 2sk246 2sc2458 2SC4667 2SA1015 2SC1815
1SV102

Abstract:
Text: 1SV102 A M RADIO BAN D TUNING APPLICATIONS. SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE · · · H igh C apacitance Ratio H igh Q Sm all Package. : C 2 y / C 2 5 V = 23 (Typ.) : Q = 400 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse V oltage Junction T em perature Storage T em perature Range SYMBOL Vr Tj Tstg RATING 30 125 -5 5 -1 2 5 U NIT V °c °c W eight : 0.09g MIN. TYP. MAX. UNIT - - V 30 - - nA 50 - 460 pF 360 - 21 pF 15 - 20 23 200


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PDF 1SV102 10//A 1SV102
1SV102

Abstract:
Text: to change w itho ut notice. 1997 05-08 - 1/3 TOSHIBA 1SV102 Table 1 : Capacitance


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PDF
3120 tuner

Abstract:
Text: Single 1 Tw in [ 1SV101 1SV102 1SV149 1S V I 60 1S V I 28 1SV172 1SV252 1.8 HYBRID DEVICES


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PDF 3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SV226 2sc low noise 1SV204 C1923 1SS242 1SS241 mos cascode 2SA1161
k192a

Abstract:
Text: ALPHANUMERICAL INDEX Type No. 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 1SS314 1SS315 1SS364 1SS371 1SV99 1SV101 1SV102 1SV103 1SV128 1SV147 1SV149 1SV153 1SV153A 1SV160 1SV161 1SV172 1SV186 1SV204 1SV211 1SV212 1SV214 1SV215 1SV216 Marking BA SI TY S2 BF BG BD BH BF BG TY S2 BF TY V99 V101 V102 V103 BB V147 V149 T1 T5 VI T2 BE T3 T4 T6 T8 T1 T2 T4 Page 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 138 141 143 145 148 151 153 155 157 159 161 163 165 167


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PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2347 C2995
1S553T

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1S553T 1S768 1S767 1S766 60Ghz 1S1924
1S553

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1S553 1S553T 1S766 1S553(T) 1S769 1S1924
2005 - TOSHIBA RF Power Module S-AV24

Abstract:
Text: 1SV102 V102 166 1SV291 TK 248 1SV103 V103 169 1SV293 TH 250 1SV128 , JDV3C11 High VT 1SV102 Low VT 1SV149-B AFC 1SV160 Attenuater, SW (PIN) 4 , Tuning 1SV102 30 50 30 360~460 2 15~21 25 200 2 1 FM Tuning 1SV101 , ] 9. C­V C ­ VR 1000 700 500 300 1SV102 100 C (pF) 200 50 , 1SV237 USM 1SV102 1SV149-B 1SV172 SMQ TO-92 Double


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 3SK78 2SK1310 2sc5066 2SK192 3SK114 3SK101
1SV125

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV124 1SV125 1SV74 1SV89 1S553T 1S766 60Ghz 1S2139-B
1S553T

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV102 1S553T 1S768 1S767 1S766 60Ghz 1S1924
1S553T

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1S553T 1SV74 1S766 1s553 1S2339 1S1924
1SV74

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1SV74 1SV49 1S553T 1S766 1S2139-C 1S2139-B
1S2339

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV102 1S2339 1S553T 60Ghz 1S767 1S766 1S1924
1SV49

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1SV49 1SV124 1S553T 60Ghz 1S766 1S767 1S768
1S553T-HP

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV102 is2339 IS2790 1S553T 1S767 1S766 1S2139-B
1S553T-HP

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1SV124 IS2790 1SV53-A 1SV53 1SV74 1S553T 1SV73 1SV56
1S553T

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 sc-11 1S553T 1S768 1S767 1S766 60Ghz 1S1924
diode cross reference 1s1555

Abstract:
Text: /372/369 1SV220/221 1T362 1T402 1SV219 1SV218 1SV290/301 1SV303 1SV225 1SV102


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PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
1SV54

Abstract:
Text: 32 3 2. 0 2. 7 3 9 0 5 * 50 0. 1 12 *Ct=30pF 81 1SV102 IB2 Tun 30 30 360 400 460 2 20 23 2 25


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PDF 30GHz 1S361 50GHz 1S362 70GHz 1S363 fc-90GHz 1S553T-HP 1S766 1SV89 1SV54 1S553T 60Ghz 1S766 1S767 1S768
Supplyframe Tracking Pixel