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1SS384TE85LF Toshiba America Electronic Components DIODE ARRAY SCHOTTKY 10V USQ
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1SS384 datasheet (6)

Part Manufacturer Description Type PDF
1SS384 Toshiba Japanese - Diodes Original PDF
1SS384 Toshiba shottky barrier diode Original PDF
1SS384 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
1SS384 Toshiba DIODE Scan PDF
1SS384TE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 10V 100MA USQ Original PDF
1SS384(TE85L,F) Toshiba 1SS384 - Diode Small Signal Schottky 15V 0.1A 4-Pin USQ T/R Original PDF

1SS384 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 1SS384

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM , Test Condition Pin Assignment (Top View) Marking 1 2001-06-13 1SS384 2 2001-06-13 1SS384 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 1SS384 1SS384
1SS384

Abstract: No abstract text available
Text: 1SS384 1SS384 : mm 4 2 : VF (2) = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25) : 0.006 g () VRM 15 V 1­2U1A VR 10 V IFM 200* mA IO 100 , ) (//) ( / ) () () *: 150% 1 2007-11-01 1SS384 (Ta = 25) VF (1 , , (TOP VIEW) f = 1MHz V 2 2007-11-01 1SS384 3 2007-11-01 1SS384 · ·


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PDF 1SS384 100mA 1SS384
2001 - 1SS384

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit , Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2001-06-13 1SS384 2 2001-06-13 1SS384 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually


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PDF 1SS384 1SS384
Not Available

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Maximum (peak) reverse Voltage Average forward current IO 100 * mA IFSM 1


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PDF 1SS384 100mA
2000 - Not Available

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA , Reliability Handbook. 2000-12-15 1/2 1SS384 961001EAA2' · The information contained herein is


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PDF 1SS384 961001EAA2'
2014 - Not Available

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM , 1994-09 1 2014-03-01 1SS384 2 2014-03-01 1SS384 RESTRICTIONS ON PRODUCT USE â


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PDF 1SS384 10mitation,
2009 - 1SS384

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating , Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2007-11-01 1SS384 2 2007-11-01 1SS384 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries


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PDF 1SS384 1SS384
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS384 LOW VOLTAGE HIGH SPEED SWITCHING 1 S S 3 84 · · · Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp (2) = 0.23V (TYP.) (a)Ijr = 5mA UNIT V V mA mA mW °C Weight : 0.006g MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Maximum (Peak) Reverse 15 Vr m Voltage Reverse Voltage 10 Vr Maximum (Peak , . 1997-05-07 1/2 TOSHIBA Ip _ Vp IR - V r 1SS384 0.1 0,2 0,3 0.4 FORW ARD VOLTAGE V p


OCR Scan
PDF 1SS384 961001E
2007 - 1SS384

Abstract: No abstract text available
Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating , Test Condition Pin Assignment (Top View) Marking 1 2007-11-01 1SS384 2 2007-11-01 1SS384 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is


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PDF 1SS384 1SS384
1SS384

Abstract: EL marking
Text: TOSHIBA 1SS384 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS384 LOW VOLTAGE HIGH SPEED SWITCHING • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp (2) = 0.23V (TYP.) MAXIMUM RATINGS (Ta = 25°C) Unit in mm )Ijr = 5mA CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS384 If - VF < 0.1 ►5* H 10m K w « OS &


OCR Scan
PDF 1SS384 961001EAA2' 1SS384 EL marking
Not Available

Abstract: No abstract text available
Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp (2) = 0.23V (TYP.) o o + i @Ijr = 5mA 2 -E 3 - M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse , ico n d u cto r R e lia b ility H a n d b o o k . 1997-05-07 1/2 TO SHIBA 1SS384 ip _ Vf


OCR Scan
PDF 1SS384 SS384
Not Available

Abstract: No abstract text available
Text: TO SHIBA TO SHIBA DIODE 1SS384 LO W VOLTAGE HIGH SPEED SW ITCHING 1 SS384 @Ijr = 5mA SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 j 1.25± O.lj · · · Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp (2) = 0.23V (TYP.) o o + i M A X IM U M RATINGS (Ta = 25°C) -E 3 SYMBOL VRM VR Ifm Io :FSM P Tj Tstg Topr RATING 15 10 200 * 100 * 1 100 3 K , b o o k . 1997-05-07 1/2 TO SHIBA ip _ Vf IR Vr 1SS384 Ct - Vr o Eh H O


OCR Scan
PDF 1SS384 SS384
C3692

Abstract: PRF15BB471Q VCC3M R748 VBL16 3aon R980 c954 R838 tsurumai
Text: PRF15BB471Q D69 1SS384 4 RT3 RT5 1 2 RT10 RT11 RT12 3 PRF15BB471Q BPWRG


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PDF VREGIN16 VINT16 VDD15 FEB/02/24 1/16W 2SK3019 FDC655AN C3692 PRF15BB471Q VCC3M R748 VBL16 3aon R980 c954 R838 tsurumai
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: DF2S12FU 353 DF5A5.6FU 439 1SS383 264 DF2S12S 355 DF5A5.6JE 441 1SS384 266 , 1SS384 S-MINI (SOT-346, SC-59) SMQ (SOT-24, SC-61) SM6 (SOT-26, SC-74) HN2S01FU USV , 100 25 0 A4 1SS322 1SS294 1SS319 * 1SS384 100 10 * * 200 100 20 , ) Max (V) Max 1SS383 100 40 * 100 100 5 40 1SS384 100 10 * 100 100 20


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: 1.25 0.8 1.6 S-MINI (SC-59) 2.0 1.25 USM (SC-70) 1.6 1.2 SSM 1SS384


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
2fu smd transistor

Abstract: Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Text: 1SS367 1SS378 1SS357 2.0 mm 2.0 mm 1SS372 1SS393 2.0 mm 1SS384 2.9 mm


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PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: ) 1SS394 1SS384 1SS391 VF 1SS377 VF 1SS374 VF HN2S03T 1SS402 SW


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: TESQ 2.9 2.9 S-MINI (SC-59) (mm) 1SS394 1SS384 1SS391 VF 1SS377


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
Text: ) 1SS321 1SS394 Low leakage current, Common cathode 1SS384 1SS377 1SS391 Low VF


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PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CMS30I40A CUS10I40A toshiba SEMICONDUCTOR GENERAL CATALOG TOSHIBA DIODE CATALOG CMS10I40A CRS20I40B
general purpose zener diode 256

Abstract: 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
Text: , High-speed SW 1SS321 1SS422 Remarks 1.25 1.2 1.6 (mm) 1SS384 USV 1.6 1.5


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 general purpose zener diode 256 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
2fu smd transistor

Abstract: 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
Text: (mm) 1SS395 (mm) SMQ (SC-61) 2.0 (mm) 2.1 1.2 1.6 (mm) 1SS384 USV


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 3FV 60 43 2FK transistor smd diode Lz zener HN2S02JE 3fv 60 1SV283B 1SV101 CRS01 DF2S6.2S
CMG03

Abstract: 1SS391 toshiba SEMICONDUCTOR GENERAL CATALOG DF2S6.8S DSR520CT TOSHIBA DIODE CATALOG CMG07 CMF05 2fu smd transistor DF3A8.2FU
Text: 1SS377 1SS372 Low leakage current, Common cathode 1SS384 1SS391 1SS374 Low VF


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PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 toshiba SEMICONDUCTOR GENERAL CATALOG DF2S6.8S DSR520CT TOSHIBA DIODE CATALOG CMG07 CMF05 2fu smd transistor DF3A8.2FU
LT 543 common cathode

Abstract: CMG07 CMG03 DF2S5.6SC HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT 2fu smd transistor CMZ24 DSR520CT
Text: current, Common cathode 1SS394 1SS384 1SS391 Low VF, Independent diodes 1SS377 Low VF


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PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG07 CMG03 DF2S5.6SC HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT 2fu smd transistor CMZ24 DSR520CT
venice 6.2

Abstract: venice 6.5 c33726 73a 174 coil tb6808f CA0036 fet 123q SMD-C10 SMDC050 ir 643p
Text: No file text available


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PDF SST49LF004A venice 6.2 venice 6.5 c33726 73a 174 coil tb6808f CA0036 fet 123q SMD-C10 SMDC050 ir 643p
bmdc

Abstract: 93P3976 EC104 R5C554 A04 SOT23 1608B kt 501 TOKYO-3 PLANAR SMDC075 qm77
Text: No file text available


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PDF J18095 J18095A 93P3976 MAY/27/2003 CK-408 LM392 1/16W bmdc 93P3976 EC104 R5C554 A04 SOT23 1608B kt 501 TOKYO-3 PLANAR SMDC075 qm77
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