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1SS378(TE85L,F) Toshiba America Electronic Components RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,15V V(RRM),SC-70
DW-08-11-S-S-378 Samtec Inc Board Stacking Connector, 8 Contact(s), 1 Row(s), Male, Straight, Solder Terminal,

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1SS378(TE85L,F) Toshiba America Electronic Components Chip1Stop 2,100 $0.38 $0.33
DW-08-11-S-S-378 Samtec Inc Avnet 0 $1.22 $0.95

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1SS378 datasheet (8)

Part Manufacturer Description Type PDF
1SS378 Kexin High Switching Diode Original PDF
1SS378 Toshiba shottky barrier diode Original PDF
1SS378 Toshiba Japanese - Diodes Original PDF
1SS378 TY Semiconductor High Switching Diode - SOT-323 Original PDF
1SS378 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS378 Toshiba DIODE (HGIH SPEED SWITCHING) Scan PDF
1SS378 Toshiba DIODE Scan PDF
1SS378(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA USM Original PDF

1SS378 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS378

Abstract:
Text: 1SS378 1SS378 : mm : VF = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25) : 0.006 g () VRM 15 V SC­70 1­2P1B VR 10 V IFM 200* mA IO 100* mA , ) (//) ( / ) () () *: 150% 1 2007-11-01 1SS378 (Ta = 25) VF (1 , 20 40 pF (TOP VIEW) 2 2007-11-01 1SS378 3 2007-11-01 1SS378 ·


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PDF 1SS378 100mA 1SS378
Not Available

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward , 1/2 1SS378 2000-09-14 2/2 Toshiba


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PDF 1SS378 SC-70
2001 - 1SS378

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm l Low forward voltage : VF = 0.23V (typ.) @IF = 5mA l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse , Test Condition Equivalent Circuit (Top View) Marking 1 2001-06-07 1SS378 2 2001-06-07 1SS378 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 1SS378 SC-70 1SS378
2001 - 1SS378

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse , Test Condition Equivalent Circuit (Top View) Marking 1 2001-06-07 1SS378 2 2001-06-07 1SS378 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to


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PDF 1SS378 SC-70 1SS378
2007 - Not Available

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA : SC-70 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature , 1SS378 2 2007-11-01 1SS378 RESTRICTIONS ON PRODUCT USE · The information contained herein


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PDF 1SS378 SC-70
1SS378

Abstract:
Text: TOSHIBA 1SS378 TOSHIBA DIODE SILICON EPITAXIAL PLANAR SC H OTT KY BARRIER TYPE 1SS378 HIGH SPEED SWITCHING. Low Forward Voltage : = 0.23V (Typ.) @IF = 5mA Small Package : SC-70 MAXIMUM RATINGS (Ta = 25°C) * : Unit Rating. Total Rating = Unit Rating X 1.5 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 15 V Reverse Voltage , /2 TOSHIBA 1SS378 If - VF IR - Vr 0 0.1 0.2 0.3 0.4 FORWARD VOLTAGE Vp (V) CT - VR


OCR Scan
PDF 1SS378 SC-70 1SS378
2014 - Not Available

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V , ) Marking Start of commercial production 1993-12 1 2014-03-01 1SS378 2 2014-03-01 1SS378 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates


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PDF 1SS378 SC-70
Not Available

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm l Low forward voltage : VF = 0.23V (typ.) @IF = 5mA l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA IFSM 1* A Power dissipation P 150 mW Junction


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PDF 1SS378 SC-70 100mA
2009 - 1SS378

Abstract:
Text: 1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm Low forward voltage : VF = 0.23V (typ.) @IF = 5mA Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V , Test Condition Equivalent Circuit (Top View) Marking 1 2007-11-01 1SS378 2 2007-11-01 1SS378 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and


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PDF 1SS378 SC-70 1SS378
Not Available

Abstract:
Text: TO SHIBA 1SS378 TOSHIBA DIODE SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER TYPE 1SS378 Unit in mm HIGH SPEED SWITCHING. 2.1 ± 0.1 1.2 5 ± 0.1 • Low Forward Voltage : Vp = 0.23V (Typ.) @Ip = 5mA . Small Package oo + I : SC-70 2 M A X IM U M RATINGS (Ta = 25°C) -ES SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage RATING UNIT 15 10 Maximum (Peak) Forward Current !f M 200 V mA Average Forward Current io 100 * mA Surge


OCR Scan
PDF 1SS378 SC-70
Not Available

Abstract:
Text: T O S H IB A TO SHIBA DIODE SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER TYPE 1SS378 1SS378 HIGH SPEED SW ITCHING. U nit in mm 2.1 ± 0.1 1.2 5 ± 0.1 · . Low Forward Voltage : V p = 0.23V (Typ.) @ Ip = 5mA 3 - oo + I Sm all Package : SC-70 2 M A X IM U M RATINGS (Ta = 25°C) -ES SYM BO L Vr m Vr !f M RATING 15 10 200 100 5« 1* 100 125 -5 5 -1 2 5 - 4 0 -100 UNIT V V mA mA A mW °C °C °C oo + I CHARACTERISTIC M axim um (Peak) Reverse Voltage Reverse Voltage M axim um


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PDF 1SS378 SC-70 SC-70
Not Available

Abstract:
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER TYPE 1SS378 HIGH SPEED SWITCHING. · · Low Forward Voltage : Vp = 0.23V (Typ.) @Tp = 5mA Small Package : SC-70 SYMBOL Vd MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Rpuprsp Vnlt.ncrp RATING 15 VRM 10 UNIT V V 200 Maximum (Peak) Forward Current tFM 100 * Average Forward Current , N} 1SS378


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PDF 1SS378 SC-70
1SS378

Abstract:
Text: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF(3) = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Sym bol Maxim um (peak) reverse voltage Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current I FM 300(*) mA Average forward Current IO 100(*) mA I FSM 2(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Tem


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PDF 1SS378 1SS378 smd diode marking um smd diode UM smd diode UM 85 smd marking 35
Not Available

Abstract:
Text: Product specification 1SS378 Features Low forward voltage:VF(3) = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Sym bol Maxim um (peak) reverse voltage Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current I FM 300(*) mA Average forward Current IO 100(*) mA I FSM 2(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Tem perature range T stg


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PDF 1SS378
S3 DIODE schottky

Abstract:
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 1S1585 common anode schottky diode DIODE MARK B MARK MQ
1S1585

Abstract:
Text: Barrier 1SS372 1SS378 1SS307 1S1585 1S1585 1S1585 1S1585 F5 Schottky Barrier series Schottky Barrier


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1S1585 equivalent 1SS239 1SV147 1ss193 equivalent 1SV103 1SS337 J9 1SS241 1SS SOT mark 1SV99
2003 - mg75n2ys40

Abstract:
Text: DF5A3.6JE 431 1SS377 255 DF2S8.2FS 347 DF5A5.6CFU 433 1SS378 257 DF2S8 , (SOT-353, SC-88A) 1SS394 1SS391 HN2S01F 1SS377 10 1SS378 100 0.3 10 20 , 1SS385 1SS378 1 0.23 0.35 * 1SS385F Typ. CT (pF) 100 Typ. 20 O9 , 100 0.3 * 1SS385 40 0 O9 1SS378 1SS377 20 10 0.5 100 * 1SS422 , 300 100 5 40 * 1SS372 100 10 * 200 * 100 20 10 * 1SS378 100


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
diode Z47

Abstract:
Text: - - - - - _ - _ - - - - - 1SS378 1SS372 - 1SS377 1SS374 1SS321 1SS294


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PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z3.3 S360 DIODE Z5.6 diode zener z6 S368 diode Z27 1s diode
FC54M

Abstract:
Text: C10P09Q 10GWJ2C42 SBL1040CT C10P04Q F10P04Q MA750 MA749/A MA7D49 MA752/A 1SS349 CMPAK URP 1SS378 1SS367


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PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 sanken SE014 1SS211 1SS153 1SS2021
2fu smd transistor

Abstract:
Text: 1SS367 1SS378 1SS357 2.0 mm 2.0 mm 1SS372 1SS393 2.0 mm 1SS384 2.9 mm


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PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TSOP infrared Compact High-Current and Low VF Surface Mounting Device SBD infrared sensor (TSOP 1738)data sheet TC58V16BFT
DF2S6.8UFS

Abstract:
Text: ) (mm) 1SS394 1SS378 2.0 1.2 1.6 (mm) 1SS321 USV 1.6 1.5 2.9 2.1


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CRG03 CRG02 TPC6K01 CMZ24 CMG07 CMG02 1ss421
CRG09

Abstract:
Text: 1SS395 1SS385FV 1SS385 1SS378 100 100 1SS372 1SS413 1SS405 1SS406 50 20


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract:
Text: 25°C) 1.2 300 1SS389 1SS367 1SS395 1SS385FV 1SS385 1SS378 100 100


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
smd diode Lz zener

Abstract:
Text: 1SS385 1SS378 100 1SS372 100 1SS413 1SS405 1SS406 50 20 200 20 1SS424


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PDF SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B TOSHIBA DIODE CATALOG CMS30I40A toshiba SEMICONDUCTOR GENERAL CATALOG CUS10I40A SCE0004L CMS10I40A
general purpose zener diode 256

Abstract:
Text: Characteristics (Ta = 25°C) 0.6 Absolute Maximum Ratings 1SS385F (mm) (mm) 1SS395 1SS378


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PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 general purpose zener diode 256 015AZ15 CRS06 Variable Capacitance Diodes 015DZ4 2fu smd transistor 1SV283B bidirectional zener diode smd diode Lz zener CMS19
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