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1SS372-TE85L Toshiba America Electronic Components Bristol Electronics 2,225 $1.95 $0.64
1SS372(TE85L,F) Toshiba America Electronic Components Chip1Stop 2,900 $0.72 $0.56

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1SS372 datasheet (9)

Part Manufacturer Description Type PDF
1SS372 Galaxy Semi-Conductor Holdings Schottky Barrier Diode Original PDF
1SS372 Kexin High Speed Switching Diode Original PDF
1SS372 Toshiba shottky barrier diode Original PDF
1SS372 Toshiba Japanese - Diodes Original PDF
1SS372 TY Semiconductor Silicon Epitaxial Schottky Barrier Diode - SOT-323 Original PDF
1SS372 TY Semiconductor High Speed Switching Diode - SOT-323 Original PDF
1SS372 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS372 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan PDF
1SS372 Toshiba DIODE Scan PDF

1SS372 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS372

Abstract: No abstract text available
Text: 1SS372 1SS372 : mm : VF = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25°C) : 0.006 g () VRM 15 V SC­70 1-2P1C VR 10 V IFM 200* mA IO 100* mA , ) (//) ( / ) () () *: 70% 1 2007-11-01 1SS372 (Ta = 25°C) VF (1 , 20 40 pF 2 2007-11-01 1SS372 3 2007-11-01 1SS372 · · ·


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PDF 1SS372 100mA 1SS372
diode marking N9

Abstract: SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K
Text: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 FEATURES Pb Small surface mounting type. Lead-free Small package. Low forward voltage:VF=0.23V(typ). , Package Code 1SS372 N9 SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter , Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 PACKAGE OUTLINE , Package Shipping 1SS372 SOT-323 3000/Tape&Reel Document number: BL/SSSKF013 Rev.A


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PDF 1SS372 OT-323 BL/SSSKF013 100mA diode marking N9 SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K
2001 - 1SS372

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2001-06-07 1SS372 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 1SS372 1SS372
MARKING N9

Abstract: diode marking N9
Text: 1SS372 Schottky Barrier Diodes SOT-323 Features Small surface mounting type. Small package. Low forward voltage:VF=0.23V(typ). Applications For general purpose applications. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS372 Marking N9 Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter Non-Repetitive Peak reverse voltage Diode reverse voltage Forward continuous Current Forward Surge Current (10ms) Power Dissipation Junction


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PDF 1SS372 OT-323 1SS372 100mA MARKING N9 diode marking N9
2014 - Not Available

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current , 1 2014-03-01 1SS372 2 2014-03-01 1SS372 RESTRICTIONS ON PRODUCT USE • Toshiba


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PDF 1SS372 SC-70
2007 - 1SS372

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2007-11-01 1SS372 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The


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PDF 1SS372 SC-70 1SS372
2012 - Not Available

Abstract: No abstract text available
Text: Product No. 1SS372-T1 1. 2. Package Type Shipping Quantity SOT-323 3000/Tape & Reel , € suffix to part number above. For example, 1SS372-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS372 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low , ® 1SS372 WON-TOP ELECTRONICS Electrical Characteristics @TA=25°C unless otherwise specified , ® 1SS372 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) N9 N9


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PDF 1SS372 OT-323, MIL-STD-202,
1SS372

Abstract: No abstract text available
Text: TOSHIBA_ 1SS372 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS372 HIGH SPEED SWITCHING APPLICATION Unit in mm • Small Package Low Forward Voltage : Vjr = 0.23V (TYP.) @IF = 5mA MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward Current lFM 200* mA Average Forward Current io 100* mA , subject to change without notice. 1997-05-07 1/2 TOSHIBA 1SS372 If - VF IR - VR


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PDF 1SS372 1SS372
Not Available

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , to change without notice. 2000-09-14 1/2 1SS372 2000-09-14 2/2 Toshiba


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PDF 1SS372
2009 - 1SS372

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2007-11-01 1SS372 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its


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PDF 1SS372 SC-70 1SS372
Not Available

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA IFSM 1* A Power dissipation P 100 mW Junction temperature


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PDF 1SS372 SC-70 100mA
2001 - 1SS372

Abstract: No abstract text available
Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO , 1SS372 2 2001-06-07 1SS372 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is


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PDF 1SS372 1SS372
1SS372

Abstract: No abstract text available
Text: Diodes SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V (typ.) @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Average forward current IO 100 * mA Maximum (Peak) forward current IFM 200 * mA Surge current (10ms) IFSM 1* A P 100 mW Power


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PDF 1SS372 100mA 1SS372
SS372

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA DIODE 1SS372 HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 · · Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA 2 1.2 5 ± 0.1 o c + i MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING Maximum (Peak) Reverse 15 Vr m Voltage Reverse Voltage 10 Vr Maximum (Peak) Forward 200 , CAPACITANCE C t (pF) FORWARD CURRENT IF (A) 0 50 O 1-3 1 O < £S o M c 1SS372


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PDF 1SS372 SS372 SS372
Not Available

Abstract: No abstract text available
Text: TOSHIBA TO SHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS372 1 HIGH SPEED SWITCHING APPLICATION · · Small Package Low Forward Voltage : Vf = 0.23V (TY P .) @Ijr = 5 m A M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Vn'llncr#» Reverse Voltage Maximum (Peak) Forward C urrent Average Forward Current Surge C urrent (10ms) Power Dissipation Junction , / / / / // T a (°C) 0 LTI 1 o 1SS372 ISJ n 5


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PDF 1SS372
Not Available

Abstract: No abstract text available
Text: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 . Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA o c + i 3 - MAXIMUM RATINGS (Ta = 25°C) 2 SYMBOL CHARACTERISTIC RATING Maximum (Peak) Reverse 15 Vr m Voltage Reverse Voltage 10 , CURRENT I r (A) 1SS372


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PDF 1SS372 SS372
Not Available

Abstract: No abstract text available
Text: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter Sym bol M axim um (peak) reverse voltage Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM 200(*) mA Average forward current IO 100(*) mA I FSM 1(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage


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PDF 1SS372
Not Available

Abstract: No abstract text available
Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter Sym bol M axim um (peak) reverse voltage Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM 200(*) mA Average forward current IO 100(*) mA I FSM 1(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Tem perature range T stg


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PDF 1SS372
Not Available

Abstract: No abstract text available
Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter Sym bol M axim um (peak) reverse voltage Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM 200(*) mA Average forward current IO 100(*) mA I FSM 1(*) A Power dissipation P 100 mW Junction Tem perature Tj 125 Storage Tem perature range T stg


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PDF 1SS372
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
2010 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS372 SCHOTTKY BARRIER DIODE SOT-323 FEATURES  Small Package  Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: N9 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 10 V IO Forward Continuous Current 100 mA IFM Peak Forward Current 200 mA IFSM Surge Current@10ms 1 A PD


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PDF OT-323 1SS372 OT-323 100mA
2008 - Not Available

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS372 Features • • • • • 100 mA Schottky Barrier Diode 10 Volts Halogen free available upon request by adding suffix "-HF" High reliability Low Forward Voltage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Marking:N9 • Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant


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PDF 1SS372 OT-323
2014 - PBD 3511

Abstract: No abstract text available
Text: ® WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight (mg) 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW MMBD770 1SS401 RB461F DA204U M1MA141K, M1MA141WA, M1MA141WK DAN202U, DAN217U, DAP202U M1MA142K, M1MA142WA, M1MA142WK BAL99W, BAV70W, BAW56W BAS16W, MMBD4148W BAS19W – BAS21W BAV99W MMBD4448W BZX84C2V4W â


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PDF OT-323 MMBD352W RB706F-40, RB715F, RB717F BAS70W 1SS372 MMBD717W BAT54W MMBD330 PBD 3511
1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
Text: Barrier 1SS372 1SS378 1SS307 1S1585 1S1585 1S1585 1S1585 F5 Schottky Barrier series Schottky Barrier


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
diode Z47

Abstract: z43 diode Z5.6 Z3.3 02CZ5 S360 DIODE diode zener z6 S368 diode Z27 1s diode
Text: - - - - - _ - _ - - - - - 1SS378 1SS372 - 1SS377 1SS374 1SS321 1SS294


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PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode zener z6 S368 diode Z27 1s diode
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