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1SS370TE85LF Toshiba America Electronic Components DIODE GEN PURP 200V 100MA SC70
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1SS370 datasheet (8)

Part Manufacturer Description Type PDF
1SS370 Kexin Silicon Epitaxial Planar Type Original PDF
1SS370 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
1SS370 Toshiba Japanese - Diodes Original PDF
1SS370 Transys Electronics Plastic-Encapsulated Diode Original PDF
1SS370 TY Semiconductor Silicon Epitaxial Planar Type - SOT-23 Original PDF
1SS370 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS370 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
1SS370TE85LF Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 200V 100MA USM Original PDF

1SS370 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 1SS370

Abstract: No abstract text available
Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-70 Maximum , Condition SC-70 1-2P1D 1 Unit V µA 2001-06-07 1SS370 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS370 RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF 1SS370 SC-70 1SS370
2001 - ldr 100k

Abstract: ldr 1000 FLC32PC LDR 005 SM8142BV ldr 05
Text: EL sheet 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 180k VDD 3.0V 0.47mH , OUT1 OUT2 EL sheet 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 180k VDD 3.0V , OCE OUT1 OUT2 EL sheet 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 180k VDD , Consumption:40mA 360k OCE OUT1 EL sheet 1k* VDD OUT2 180k 3.0V 0.1µF 100V Diode:TOSHIBA 1SS370 , 0.47mH VSS OSC LDR CHV 100k 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 3.0V


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PDF SM8142 SM8142 SM8142A) SM8142B) 200VP-P 1000Hz SM8142AD SM8142BD SM8142AV ldr 100k ldr 1000 FLC32PC LDR 005 SM8142BV ldr 05
2001 - Not Available

Abstract: No abstract text available
Text: 1SS370 Surface Mount Switching Diode SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 200 VOLTS Features: * High Voltage, High Speed Switching Applications * Low Forward Voltage : VF = 0.9V , 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 02-Sep-09 1SS370 , nS VR=50V VR=200V Device Marking Item Marking 1SS370 F5 WEITRON http://www.weitron.com.tw 2/3 02-Sep-09 1SS370 Electrical Characteristic Curves (TA=25°C Unless Specified


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PDF 1SS370 OT-323 OT-323 02-Sep-09 100mA
1SS370

Abstract: VR200
Text: 1SS370 1SS370 : : : : : mm SC-70 VF (2) = 0.90V () trr = 60ns () CT = 1.5pF () JEDEC JEITA : 0.006 g () (Ta = 25°C) VRM 250 V SC­70 1­2P1D VR 200 V IFM 300 , : (//) ( /) () () 1 2007-11-01 1SS370 (Ta = 25°C) VF (1 , 2007-11-01 1SS370 1. (trr) 3 2007-11-01 1SS370 · · ·


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PDF 1SS370 SC-70 100mA 1SS370 VR200
Circuit diagram of LDR

Abstract: LDR Datasheet LDR -03 100V transformerless power supply circuit ldr 1000 ldr 05 ldr 07 ldr resistor LDR 20K circuit design of ldr
Text: 100k EL sheet 180k 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC , 1SS370 Coil:MURATA LQH4N471K04M00 0.47mH VSS CHV OCE OUT1 VDD EL sheet size:10cm2 to , 1.5V 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 C bypass 0.01µF , 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 0.47mH VSS CHV ENA , OUT2 180k EL sheet 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00


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PDF SM8142 SM8142 SM8142A) SM8142B) NC9810JE Circuit diagram of LDR LDR Datasheet LDR -03 100V transformerless power supply circuit ldr 1000 ldr 05 ldr 07 ldr resistor LDR 20K circuit design of ldr
LDR 20K

Abstract: ldr 100k 2 pin ldr LDR 03 diode oce LQH4N471K04M00 ldr 100 k SM8142BV ldr 05 SM8142B
Text: 100k EL sheet 180k 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER ELETEC FLC32PC , : TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 0.47mH VSS EL sheet size:10cm 2 to 15cm 2 Current , 180k 1.5V 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 Cbypass , Cbypass 0.01µF OUT2 100k EL sheet 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER , Diode: TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 0.22mH VSS CHV ENA OUT1 VDD OUT2


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PDF SM8142 SM8142 SM8142A) SM8142B) 200VP-P 1000Hz SM8142AD SM8142BD SM8142AV LDR 20K ldr 100k 2 pin ldr LDR 03 diode oce LQH4N471K04M00 ldr 100 k SM8142BV ldr 05 SM8142B
2001 - Circuit diagram of LDR

Abstract: LDR voltage range 3 pins LDR LDR FUNCTION Circuit diagram of LDR oscillator 3 pins LDR Datasheet LDR Datasheet LDR range LDR 03 datasheet LDR resistor
Text: 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 0.47mH VSS CHV OCE OUT1 , OUT2 180k EL sheet 180k 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:MURATA , Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 0.47mH VSS CHV OCE EL sheet size:30cm 2 to , C bypass 0.01µF OUT2 0.1µF 100V Diode:TOSHIBA 1SS370 Coil:MURATA LQH4N471K04M00 , EL sheet 0.1µF 100V 3.0V Diode:TOSHIBA 1SS370 Coil:RIVER ELETEC FLC32PC 0.47mH VSS EL


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PDF SM8142 SM8142 SM8142A) SM8142B) NC9810HE Circuit diagram of LDR LDR voltage range 3 pins LDR LDR FUNCTION Circuit diagram of LDR oscillator 3 pins LDR Datasheet LDR Datasheet LDR range LDR 03 datasheet LDR resistor
1SS370

Abstract: No abstract text available
Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-70 Maximum , the TOSHIBA Semiconductor Reliability Handbook. 2000-09-14 1/3 1SS370 Fig.1 Reverse , change without notice. 2000-09-14 2/3 1SS370 2000-09-14 3/3 Toshiba


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PDF 1SS370 SC-70 961001EAA2' 1SS370
2001 - NIPPON CAPACITORS

Abstract: transistor 495 LDR 24v
Text: ROSC 150k VDD (Coil) L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC , : Toshiba 1SS370 VDD (IC) 2.4V 2.4V Figure 14. Application circuit The inductance, ROSC can all be , LQH4N C1: Murata GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V Figure 17. Application circuit , : Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 2.4V 2.4V Figure 20. Application circuit , : Murata GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V Figure 23. Application circuit Current


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PDF SM8144 70cm2 SM8144B NK0005AE CIRCUITS--19 NIPPON CAPACITORS transistor 495 LDR 24v
2001 - 1SS370

Abstract: No abstract text available
Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC , current Test Condition SC-70 1-2P1D 1 Unit V µA 2001-06-07 1SS370 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS370 RESTRICTIONS ON


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PDF 1SS370 SC-70 1SS370
2010 - 1SS370

Abstract: J-STD-020D
Text: 1SS370 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 200 Volts FORWARD CURRENT ­ 0.1 , Characteristics @ TA = 25 unless otherwise specified Characteristic Symbol 1SS370 Units VRRM 250 , RATING AND CHARACTERISTIC CURVES 1SS370 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse , Fig.5 Reverse Recovery Time (trr) Test Circuit Device Marking : Device P/N 1SS370 Marking F5 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS370 Important Notice and Disclaimer LSC


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PDF 1SS370 OT-323 OT-323 J-STD-020D 2002/95/EC 1SS370 J-STD-020D
2001 - transistor 91 330

Abstract: CIRCUITS-20 220 uh K11-R k11r ldr 100 k
Text: ROCL 180k VDD (Coil) ROCE 180k L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 , ) VDD (IC) ROCE 130k L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 3.0V , ROCL 360k VDD (Coil) ROCE 130k L: Panasonic ELL6SH C1: Murata GRM435R104k100 D1: Toshiba 1SS370 , L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 3.0V 3.0V 27 , : Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 3.0V 3.0V 30 EL size [cm 2 ] [cm ] 49.5


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PDF SM8143 SM8143 SM8143A 1SM8143 F/100V CIRCUITS--19 transistor 91 330 CIRCUITS-20 220 uh K11-R k11r ldr 100 k
2001 - inductor CM 10 uH

Abstract: LDR 20K 220uh k11r
Text: D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 3.0V 3.0V 9 R OUT = 0 , GRM435R104k100 D1: Toshiba 1SS370 VDD (IC) 2.4V 2.4V 14 SM8144 ROSC EL size [cm 2 ] [cm ] 15.0 , ) VDD (IC) L: Murata LQH4N C1: Murata GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V 17 EL size , ROSC 220k VDD (Coil) L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC , GRM435R104k100 D1: Toshiba 1SS370 2.4V 2.4V 23 EL size [cm 2 ] [cm ] 30.1 30.1 30.1 30.1 30.1 30.1 ROSC


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PDF SM8144 70cm2 SM8144B 1SM8144 100000fast F/100V inductor CM 10 uH LDR 20K 220uh k11r
2006 - LDR Datasheet

Abstract: LDR 20K 3 pins LDR Datasheet Circuit diagram of LDR LDR -03 LDR resistor LDR DIMENSIONS LDR FUNCTION LDR 04 2 pin ldr datasheet
Text: 180k 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER ELETEC FLC32PC 0.47mH VSS OUT1 , OCL Cbypass 0.01µF 180k EL sheet 180k 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 , 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: MURATA LQH4N471K04M00 Cbypass 0.01µF 0.47mH , OUT2 100k EL sheet 0.1µF 100V 3.0V Diode: TOSHIBA 1SS370 Coil: RIVER ELETEC FLC32PC , 1SS370 Coil: MURATA LQH4N471K04M00 0.22mH VSS CHV ENA OUT1 VDD OUT2 180k 1.5V


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PDF SM8142 SM8142 30cm2 SM8142A) SM8142B) NC9810KE LDR Datasheet LDR 20K 3 pins LDR Datasheet Circuit diagram of LDR LDR -03 LDR resistor LDR DIMENSIONS LDR FUNCTION LDR 04 2 pin ldr datasheet
2007 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE FEATURES High voltage, high speed switching applications Low forward voltage Fast reverse recovery time Small total capacitance 1 3 2 MAKING: F5 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 250 V DC reverse , ,2012 Typical Characteristics 1SS370 Reverse Characteristics Forward Characteristics 100


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PDF OT-323 OT-323 1SS370
2007 - 1SS370

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES High Voltage, High Speed Switching Applications Low forward voltage Fast reverse recovery time Small total capacitance 3. CATHODE MAKING: F5 Maximum Ratings @TA=25 Parameter Symbol Limits Unit Peak reverse voltage VRM , 60 Typical Characteristics 1SS370 Jiangsu Changjiang Electronics Technology


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PDF OT-323 OT-323 1SS370 100mA 1SS370
2009 - marking f5

Abstract: diode marking F5
Text: 1SS370 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 200 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-323 SOT-323 Dim. A A1 b c D E E1 e e1 L Min. Max. · Fast Switching Speed · , Storage Temperature Range @t=10ms Symbol VRRM VR IFM IO IFSM TJ TSTG 1SS370 Units V V mA mA A 250 , 0.1 1 3 - REV. 0, May-2009, KSYR13 RATING AND CHARACTERISTIC CURVES 1SS370 Fig.1 Typical , Circuit Device Marking : Device P/N 1SS370 Marking F5 Equivalent Circuit Diagram Lite-On


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PDF 1SS370 OT-323 OT-323 J-STD-020D 2002/95/EC 100mA May-2009, KSYR13 1SS370 marking f5 diode marking F5
2009 - 1SS370

Abstract: No abstract text available
Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , 2007-11-01 1SS370 Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2 2007-11-01 1SS370 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates


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PDF 1SS370 SC-70 1SS370
Not Available

Abstract: No abstract text available
Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 mA Average forward current


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PDF 1SS370 SC-70 100mA
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE 1SS370 SILICON EPITAXIAL PLANAR TYPE v r m w 1 <; <; 3 7 n wêêf HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS · · · · Low Forward Voltage F a st Reverse Recovery Time Sm all Total Capacitance Sm all Package V F (2) = 0.9V (TYP.) tr r -60 ns (MAX.) CT = 1.5pF (TYP.) SC-70 MAXIMUM RATING (Ta = 25°C) CHARACTERISTIC M axim um (Peak) Reverse Voltage Reverse Voltage , . 1997-05-07 1/2 TOSHIBA Ip _ Vp 1SS370 Ir - v r R EV ER SE VOLTAGE Vr (V) C t - Vr


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PDF 1SS370 SC-70 961001EAA2'
1SS370

Abstract: No abstract text available
Text: TOSHIBA 1SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS370 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS Unit in mm • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance • Small Package MAXIMUM RATING (Ta = 25°C) VF (2) = 0.9 V (TYP.) trr = 60ns (MAX.) CT = 1.5pF (TYP.) SC-70 CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 250 V Reverse , TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS370 100m 30m 10m 3m lm 300// 100


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PDF 1SS370 SC-70 961001EAA2' 1SS370
2007 - 1SS370

Abstract: No abstract text available
Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , Forward voltage Reverse current Test Condition 1 Unit V A 2007-11-01 1SS370 Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2 2007-11-01 1SS370 RESTRICTIONS


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PDF 1SS370 SC-70 1SS370
transistor 91 330

Abstract: Circuit diagram of LDR SM8143 ldr 10k NIPPON CAPACITORS small ldr 2 pins datasheet 1SS370 ldr resistor SM8143A vsop 16
Text: : Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (Coil) EL lamp 4.3 7.0cm , Blue-Green ROCE 130k L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 VDD (IC , C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROCE 130k (IC) 3.0V 3.0V Figure 24 , (Coil) L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROCE 180k ROCL , : Panasonic ELL6SH C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROCE 180k (IC) 3.0V 3.0V Figure


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PDF SM8143 SM8143 NK0001CE transistor 91 330 Circuit diagram of LDR ldr 10k NIPPON CAPACITORS small ldr 2 pins datasheet 1SS370 ldr resistor SM8143A vsop 16
ldr 10k

Abstract: NIPPON CAPACITORS 3 pins LDR Datasheet 1SS370 SM8144 SM8144B LDR 20K LDR 5K
Text: Blue-Green D1 Cbypass 0.01µF L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 , L: Toko D73LCE-817CE C1: Murata GRM435R104k100 D1: Toshiba 1SS370 ROSC 150k VDD VDD , D1: Toshiba 1SS370 ROSC 180k VDD (Coil) VDD (IC) 2.4V 2.4V Figure 17. Application , D1: Toshiba 1SS370 ROSC 220k VDD VDD (Coil) (IC) 2.4V 2.4V Figure 20. Application , D1: Toshiba 1SS370 ROSC 270k VDD (Coil) VDD (IC) 2.4V 2.4V Figure 23. Application


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PDF SM8144 SM8144 70cm2 SM8144B NK0005BE ldr 10k NIPPON CAPACITORS 3 pins LDR Datasheet 1SS370 LDR 20K LDR 5K
diode marking F5

Abstract: marking F5
Text: 1SS370 Surface Mount Switching Diode SOT-323 Features Small surface mounting type. High speed. High reliability with high surge current handing capability. Applications For general purpose switching applications. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS370 Marking F5 Package Code SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise specified Parameter Non-Repetitive Peak reverse voltage Diode reverse voltage Forward peak Current(max.) Average


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PDF 1SS370 OT-323 1SS370 100mA diode marking F5 marking F5
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