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1SS367,H3F Toshiba America Electronic Components DIODE SCHOTTKY 10V 100MA SC76
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1SS367 Toshiba America Electronic Components Chip One Exchange 5,880 - -
1SS367 T3SONY Toshiba America Electronic Components Chip One Exchange 2,950 - -
1SS367 T3SONY Toshiba America Electronic Components Chip One Exchange 2,800 - -
1SS367,H3F Toshiba America Electronic Components Chip1Stop 6,591 $0.05 $0.05
1SS367,H3F Toshiba America Electronic Components Chip1Stop 2,950 $0.14 $0.10
1SS367,H3F Toshiba America Electronic Components Avnet - $0.02 $0.02
1SS367(F) Toshiba America Electronic Components RS Components 100 £0.20 £0.07
1SS367(TPH3,F) Toshiba America Electronic Components Avnet - - -
1SS367(TPH3,F) Toshiba America Electronic Components Chip1Stop 49,884 $0.09 $0.07
1SS367(TPH3,F) Toshiba America Electronic Components Chip1Stop 6,000 $0.58 $0.44
1SS367(TPH3,F) Toshiba America Electronic Components Avnet 33,000 - -
1SS367H3F(T Toshiba America Electronic Components Avnet - €0.04 €0.02
1SS367T3SONY Toshiba America Electronic Components ComS.I.T. 12,000 - -

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1SS367 datasheet (9)

Part Manufacturer Description Type PDF
1SS367 Kexin High Speed Switching Application Original PDF
1SS367 Toshiba shottky barrier diode Original PDF
1SS367 Toshiba Japanese - Diodes Original PDF
1SS367 TY Semiconductor High Speed Switching Application - SOD-323 Original PDF
1SS367 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS367 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan PDF
1SS367 Toshiba DIODE Scan PDF
1SS367TH3FT Toshiba 1SS367TH3FT - Diode Small Signal Schottky 15V 0.2A 2-Pin USC T/R Original PDF
1SS367TPH3F Toshiba 1SS367TPH3F - 1SS367TPH3F Original PDF

1SS367 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS367

Abstract: No abstract text available
Text: 1SS367 1SS367 : mm 2 : VF = 0.23V () @IF = 5mA JEDEC JEITA (Ta = 25°C) : 0.004 g () VRM 15 V 1­1E1A VR 10 V IFM 200 mA IO 100 mA IFSM , ) (//) ( / ) () () *: (: 20mm×20mm: 4mm×4mm) 1 2007-11-01 1SS367 (Ta = 25°C) VF (1 , 20 40 pF (TOP VIEW) 2 2007-11-01 1SS367 3 2007-11-01 1SS367 ·


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PDF 1SS367 100mA 1SS367
2001 - 1SS367

Abstract: No abstract text available
Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-07 1SS367 2 2001-06-07 1SS367 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 1SS367 1SS367
Marking Code "s3" diode

Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features · Low forward voltage PINNING DESCRIPTION PIN 1 Applications · High Speed Switching Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC , Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 Ta=100°C 300 300m 100m , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 PACKAGE


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PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Marking Code "s3" diode

Abstract: MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features · DESCRIPTION PIN 1 VF = 0.23V (typ.) @IF = 5mA Cathode 2 Low forward voltage: Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol , /2004 1SS367 100m 100 30m Reverse Current IR (A) Ta=100°C 75°C 50°C 25°C 10m , , Stock Code: 724) ® Dated : 30/08/2004 1SS367 PACKAGE OUTLINE Plastic surface mounted


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PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
2007 - 1SS367

Abstract: No abstract text available
Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , (Top View) Unit V Marking 1 2007-11-01 1SS367 2 2007-11-01 1SS367


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PDF 1SS367 1SS367
2001 - 1SS367

Abstract: No abstract text available
Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR , Equivalent Circuit (Top View) Unit V Marking 1 2001-06-07 1SS367 2 2001-06-07 1SS367 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 1SS367 1SS367
Not Available

Abstract: No abstract text available
Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , 1/2 1SS367 2000-09-14 2/2 Toshiba


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PDF 1SS367
3m sod

Abstract: marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features · Low forward voltage PINNING DESCRIPTION PIN 1 Applications · High Speed Switching Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC , Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 Ta=100°C 300 300m 100m , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 1SS367 PACKAGE


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PDF 1SS367 OD-323 OD-323 3m sod marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
S3 marking DIODE

Abstract: 1SS367
Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features · DESCRIPTION PIN 1 VF = 0.23V (typ.) @IF = 5mA Cathode 2 Low forward voltage: Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol , /2004 1SS367 Ta=100° C 300 300m 100m 100 Reverse Current IR (A) Ta=100° C 30m , listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 30/08/2004 1SS367 PACKAGE


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PDF 1SS367 OD-323 OD-323 S3 marking DIODE 1SS367
1SS367

Abstract: marking OE MARKING L toshiba USC
Text: TOSHIBA 1SS367 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS367 HIGH SPEED SWITCHING APPLICATION • Small Package Low Forward Voltage : Vjr = 0.23V (TYP.) MAXIMUM RATINGS (Ta = 25°C) )Ijr = 5mA CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage Vr 10 V Maximum (Peak) Forward Current ÏFM 200 mA Average Forward Current io 100 mA , /2 TOSHIBA 1SS367 If - VF IR - VR 00Â


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PDF 1SS367 1SS367 marking OE MARKING L toshiba USC
2009 - 1SS367

Abstract: No abstract text available
Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 , (Top View) Unit V Marking 1 2007-11-01 1SS367 2 2007-11-01 1SS367


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PDF 1SS367 1SS367
2014 - Not Available

Abstract: No abstract text available
Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage , Marking Start of commercial production 1993-04 1 2014-03-01 1SS367 2 2014-03-01 1SS367 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates


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PDF 1SS367
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS367 HIGH SPEED SWITCHING APPLICATION · · Small Package Low Forward Voltage : Vf = 0.23V (TYP.) @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Vn'llncr#» SYMBOL RATING 15 10 200 UNIT VRM VR X FM V V mA Reverse Voltage Maximum (Peak) Forward C urrent Average Forward Current , . 1997-05-07 1/2 TOSHIBA Ip _ Vp IR - Vr 1SS367 REVERSE VOLTAGE Vr (V) Ct - Vr f - lM H


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PDF 1SS367
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching , EE33 S3 1SS294 Schottky barrier 1SS373 Low VF switching 10 100 S4 1SS367


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Not Available

Abstract: No abstract text available
Text: 1SS367 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SSB67 HIGH SPEED SW ITCHING APPLICATION • • Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse V 15 Vr m Voltage 10 V Reverse Voltage Vr Maximum (Peak) Forward mA 200 !f M Current , notice. 1997 - 05-07 1/2 1SS367 TO SHIBA ip _ Vf IR - V r Ct - V r Ta H O 2


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PDF 1SS367 SSB67
1SS367

Abstract: marking S4 markingS4
Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS367 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small package: :SC-70 Low forward voltage :VF(3) = 0.23 V(Typ) @ IF = 5 mA +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Maximum (peak) reverse voltage Parameter VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward


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PDF 1SS367 OD-323 SC-70 1SS367 marking S4 markingS4
Not Available

Abstract: No abstract text available
Text: TO SHIBA TO SHIBA DIODE 1SS367 HIGH SPEED SW ITCHING APPLICATION 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE · · Small Package Low Forward Voltage : Vp = 0.23V (TYP.) @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse V 15 Vr m Voltage 10 V Reverse Voltage Vr Maximum (Peak) Forward mA 200 !f M Current mA Average Forward , # 1997 - 05-07 1/2 TO SHIBA ip _ Vf 300m IR Vr 1SS367 H £ W tí tí O 0 Q


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PDF 1SS367 SS367 Hv100
DF2S3.6SC

Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU TC7SZ00F TC7SZ00AFS
Text: 0.6 100 1SS367 10 5 100 1SS421 DSF521 DSF05S30CTB USC (SOD , Typ. Max (mA) Max (V) 0.23 0.3 20 IR (A) VF (V) 1SS367 5 10 100 Ta 25 30


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PDF BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU TC7SZ00F TC7SZ00AFS
Not Available

Abstract: No abstract text available
Text: Product specification 1SS367 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small package: :SC-70 Low forward voltage :VF(3) = 0.23 V(Typ) @ IF = 5 mA +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Maximum (peak) reverse voltage Parameter VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA


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PDF 1SS367 OD-323 SC-70
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 1SS367 246 DF2S6.2FS 339 DF5A3.6CJE 425 1SS370 248 DF2S6.2S 341 DF5A3 , USM (SOT-323, SC-70) 100 0.23 VF 0.3 0.35 10 Max USC (SOD-323) 1SS367 , 1SS357 1SS294 40 0 S4 1SS367 1SS394 50 3.9 0 A7 1SS406 , 20 10 0.5 100 20 0 A6 1SS367 1SS394 ×2 * HN2S02JE 100 40 , 40 300 100 5 40 0.60 100 25 0 S3 1SS294 0.30 5 * 1SS367


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: GIC IRC MA748 1SS367 /373 LRP EK04 AK04 DINS4 D1FS4 SE014 1GWJ42 1GWJ43


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PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
2fu smd transistor

Abstract: Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Text: RN1901 RN1301 X 2 Schottky barrier diode HN2S01FU 1SS367 X 3 Small signal MOSFET , 1SS367 1SS378 1SS357 2.0 mm 2.0 mm 1SS372 1SS393 2.0 mm 1SS384 2.9 mm


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PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 smd 1608 tsop Ir sensor TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
FC54M

Abstract: FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
Text: C10P09Q 10GWJ2C42 SBL1040CT C10P04Q F10P04Q MA750 MA749/A MA7D49 MA752/A 1SS349 CMPAK URP 1SS378 1SS367


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PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
2001 - HN4C06J

Abstract: te85l F 1SS302 rn4983 2SC4117 US6 KEC 2SK2145 SUFFIX TE85L Toshiba HN1B04FE RN4607
Text: type 1SS385F 1SS385 1SS378 1SS377 1SS367 15 200 100 VF = 0.18 V @1 mA, VF = , withstand capability ­ Series connection 2-in-1 ­ 1SS372 1SS374 1SS367 15 200 , 100 High withstand capability 1SS384 1SS391 1SS367 15 200 100 VF = 0.18 V @1 mA, VF , HN2S01F 1SS367 15 200 100 HN2S02FU Features HN2D01F ­ 1SS357 45 300


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CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: ) CST2B 1.0 0.8 fSC 0.6 1.2 CST2 (Ta = 25°C) 1.2 300 1SS389 1SS367


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
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