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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1SS336 Toshiba America Electronic Components Bristol Electronics 1,450 $1.24 $0.32
1SS336(TE85L,F) Toshiba America Electronic Components Chip1Stop 8,150 $2.30 $1.80

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1SS336 datasheet (10)

Part Manufacturer Description Type PDF
1SS336 Kexin Ultra High Speed Switching Application Original PDF
1SS336 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
1SS336 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
1SS336 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS336 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
1SS336 Toshiba DIODE Scan PDF
1SS336TE85L Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS336TE85L2 Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS336TE85R Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS336TE85R2 Toshiba 1SS336 - DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

1SS336 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS336

Abstract: No abstract text available
Text: 1SS336 1SS336 : : : : : mm SC-59 VF (3) = 0.84V () trr = 7ns () CT = 7pF () JEDEC JEITA (Ta = 25°C) : 0.012 g , s ) (//) ( /) () () *: 150% 1 2007-11-01 1SS336 (Ta = 25 , trr IF = 30mA ( 1) V A 1. (trr) 2 2007-11-01 1SS336 3 2007-11-01 1SS336 · · · · "" · · · ·


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PDF 1SS336 SC-59 236MOD 100mA 200mA 1SS336
Not Available

Abstract: No abstract text available
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit in mm Small package : SC-59 Low forward voltage : VF (3) = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM 85 , Reliability Handbook. 2000-09-19 1/2 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circuit


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PDF 1SS336 SC-59 961001EAA2'
2007 - 1SS336

Abstract: No abstract text available
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF (3) = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.) Absolute Maximum , current Test Condition 1 Unit V A 2007-11-01 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS336 RESTRICTIONS ON PRODUCT USE 20070701


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PDF 1SS336 SC-59 1SS336
2001 - TD236

Abstract: 1SS336
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF (3) = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.) Maximum Ratings , voltage Reverse current Test Condition 1 Unit V µA 2001-06-07 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS336 RESTRICTIONS ON


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PDF 1SS336 SC-59 TD-236MOD TD236 1SS336
2001 - 1SS336

Abstract: No abstract text available
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF (3) = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ , voltage Reverse current Test Condition 1 Unit V µA 2001-06-07 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS336 RESTRICTIONS ON


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PDF 1SS336 SC-59 1SS336
1SS336

Abstract: No abstract text available
Text: TOSHIBA 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS336 ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package : SC-59 • Low Forward Voltage : Vf(3) = 0.84V (Typ.) • Fast Reverse Recovery Time : trr = 7ns (Typ.) Small Total Capacitance : CT = 7pF(Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward , . 1997-05-07 1/2 TOSHIBA 1SS336 961001EAA2' 0 The information contained herein is presented only as a guide


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PDF 1SS336 SC-59 O-236MOD 961001EAA2' 1SS336
2009 - 1SS336

Abstract: td236
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF (3) = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.) Absolute Maximum , current Test Condition 1 Unit V A 2007-11-01 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS336 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 1SS336 SC-59 1SS336 td236
2014 - TD236

Abstract: No abstract text available
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm Small package : SC-59 Low forward voltage : VF (3) = 0.84V (typ.) Fast reverse recovery time : trr = 7ns (typ.) Small total capacitance : CT = 7pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , 1SS336 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2014-03-01 1SS336


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PDF 1SS336 SC-59 TD236
Not Available

Abstract: No abstract text available
Text: 1SS336 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application Unit: mm l Small package : SC-59 l Low forward voltage : VF (3) = 0.84V (typ.) l Fast reverse recovery time : trr = 7ns (typ.) l Small total capacitance : CT = 7pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 600 * mA Average forward


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PDF 1SS336 SC-59 TD-236MOD 100mA 200mA
Not Available

Abstract: No abstract text available
Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. . • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp(3) = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , oo + I I - MAXIMUM , 1SS336 T O SH IB A ip 1 300m 100m 30m a = 125 100 75 3C Ö 50 >C JjLÇ 10m / h


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PDF 1SS336 SC-59
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA DIODE 1SS336 ULTRA HIGH SPEED SWITCHING APPLICATION. 1SS336 SILICON EPITAXIAL PLANAR TYPE Unit in mm + 0 .5 2 .5 - 0 . 3 + 0 .2 5 1 .5 - 0 . 1 5 , i oo + 1 0 .9 5 . · · · Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp(3) = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) UNIT V V mA mA mW °C S 6 , A Se m ico n d u cto r R e liab ility H andbo ok. 1997 05-07 - 1/2 T O SH IB A 1SS336


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PDF 1SS336 SC-59
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS336 1 < ; < ; 3 * f i ULTRA HIGH SPEED SW ITCHING APPLICATIO N. + 0.5 2 . 5 - 0 .3 U nit in mm · · · · Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capaçitançç : :SC-59 :Vf (3)= 0.84V (Typ.) = '7ns (Typ.) ;Ct ~ 7pF (Typ.) I2 + 0 ,2 5 1. 5 - 0 . 1 5 . o o + I -EB M A X IM , TOSHIBA 1SS336 ip - vf IR - Vr 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6


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PDF 1SS336 SC-59
Not Available

Abstract: No abstract text available
Text: Product specification 1SS336 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.84 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast reverse recovery time: trr = 7ns(Typ). +0.05 0.1-0.01 0-0.1 +0.1 0.97-0.1 : CT = 7pF(Typ). +0.1 0.38-0.1 Small total capacitance 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol


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PDF 1SS336 OT-23
1SS336

Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE 1SS336 Unit in mm +0.5 2 5-0.3 + 0.25 1.5 -0 .1 5 , 1 ULTRA HIGH SPEED SWITCHING APPLICATION. . Small Package . Low Forward Voltage :SC-59 :V f = 0 .84V(Typ.) . Fast Reverse Recovery Time : trr= ?n s (Typ.) . Small Total Capacitance :CT=7pF(Typ.) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximum(Peak) Forward Current Average Forward Current Surge Current (10ns) Power Dissipation Junction Temperature Storage


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PDF 1SS336 SC-59 100mA 200raA 1SS336
1998 - 1ss346

Abstract: No abstract text available
Text: DOC. NO. 04CB-000429 PART NO. 0407-000118 1SS336 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION, • Small Package : SC—59 • Low Forward Voltage : VF=0.84V(Typ.) • Fast Reverse Recovery Time : trr=7ns(Typ.) • Small Total Capacitance CT=7pF(Typ.) : MAXIMUM RATINGS (Ta=25oC) CHARACTERISTIC SYMBOL RATING UNIT Maximum(Peak) Reverse Voltage VRM Reverse Voltage VR 80 V Maximum(Peak) Forward Current


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PDF 04CB-000429 1SS336 101MA 200mA 1SS346 1ss346
1SS336

Abstract: No abstract text available
Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS336 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF3 = 0.84 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast reverse recovery time: trr = 7ns(Typ). +0.05 0.1-0.01 0-0.1 +0.1 0.97-0.1 : CT = 7pF(Typ). +0.1 0.38-0.1 Small total capacitance 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


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PDF 1SS336 OT-23 1SS336
1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
Text: 1SS336 1SS337 1SS344 1SS348 1SS349 1SS374 1SS377 1SS379 HN1D01F HN1D02F HN1D03F HN2D01F High-speed


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
diode Z47

Abstract: z43 diode Z5.6 Z3.3 02CZ5 S360 DIODE diode zener z6 S368 diode Z27 1s diode
Text: - - _ - - - - - - - - 1SS193 1SS196 1SS187 1SS190 1SS181 1SS184 1SS226 1SS336 1SS337 1S


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PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode zener z6 S368 diode Z27 1s diode
mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Text: 02CZ27~47 1SS42 2N3789 2N3790 1N4150 1SS336 , 1SS337 1SS155 1SS314 2N3791 1N4606 1SS336 , 1SS337 1SS179/180 1SS181 2N3792 05Z56~100 1SS148 1N4607


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PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: 1SS306 1SS307 1SS308 1SS309 1SS311 1SS312 1SS313 1SS314 1SS315 1SS319 1SS321 1SS322 1SS336 1SS337 Page


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 1SS336 205 02CZ3.6 133 02DZ5.6 139 1SS337 208 02CZ3.9 133 02DZ6.2 139 , 1SS272 HN1D03FU HN1D03F 1.6 typ. 1SS336 1SS337 6.0 typ. 1SS403 1SS370 1SS250 , * 300 * 100 0.5 80 1.2 100 3.0 0 4 C3 1SS336 150 80 * 600


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: in g > Type No. 1SSX81 1SS184 1SS187 1SS190 1SS193 1SS196 1SS226 1SS272 1SS307 1SS336 1SS337 Vr


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PDF 160-i f-1SS349-- SS181 SS184 SS187 SS190 1SS307 SS193 HN2D01P HN1D01F diode MARKING CODE A9 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: 1SS190 HN1D03FU + 1SS336 1SS337 1SS250 1SS306 1SS311


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: . 200 100 10 (30) Typ. 400 500 100 (1500) Typ. 400 100 80 1SS336 80


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: . 80 200 6.0 Typ. 200 100 10 (30) Typ. 400 500 100 (1500) Typ. 1SS336


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
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