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1SS32 datasheet (22)

Part Manufacturer Description Type PDF
1SS321 Kexin Low Voltage High Speed Switching Original PDF
1SS321 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
1SS321 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
1SS321 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS321 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS321 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
1SS321 Toshiba DIODE Scan PDF
1SS321TE85L Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS321TE85L2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS321TE85LF Toshiba 1SS321TE85LF - Diode Small Signal Schottky 12V 0.05A 3-Pin S-Mini T/R Original PDF
1SS321TE85R Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS321TE85R2 Toshiba 1SS321 - DIODE 0.05 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS322 Kexin Low Voltage High Speed Switching Original PDF
1SS322 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
1SS322 Toshiba Japanese - Diodes Original PDF
1SS322 TY Semiconductor Low Voltage High Speed Switching - SOT-323 Original PDF
1SS322 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS322 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS322 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
1SS322 Toshiba DIODE Scan PDF

1SS32 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 1SS321

Abstract: No abstract text available
Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF = 0.42V (typ.) Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 12 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 150 , V Marking 1 2001-06-07 1SS321 2 2001-06-07 1SS321 RESTRICTIONS ON PRODUCT


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PDF 1SS321 500nA SC-59 OT-23MOD) 1SS321
2004 - STF12A80

Abstract: BSTD1046 BSTC1026 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: 1SS244 1SS271 1SS294 1SS314 1SS319 1SS321 1SS344 1SS349 1SS355 1SS356 1SS357 1SS367 1SS369


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PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTD1046 BSTC1026 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
TPCA*8030

Abstract: lm2804 TPCA*8036 TPC8037 TPC8A03 Sj 88a diode 2SK2033 TPCA8028 IC sj 4558 TC4W53FU
Text: No file text available


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PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 TPC8037 TPC8A03 Sj 88a diode 2SK2033 TPCA8028 IC sj 4558 TC4W53FU
2001 - marking code 62z

Abstract: philips surface mount zener diode v6 1S2473 equivalent marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: JDH2S01T MA57 MA57WK MA57WA MA2S077 MA77 MA2S728 MA2S728 MA2J728 1SS315 1SS153 1SS329 /330 1SS327 /328 1SS316


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PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 1S2473 equivalent marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
2007 - 1SS322

Abstract: No abstract text available
Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , 1SS322 2 2007-11-01 1SS322 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The


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PDF 1SS322 SC-70 1SS322
2SKI34

Abstract: TA8515 westinghouse CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG TA8503F T6950 TD62803 LSI LOGIC product catalog TC8576
Text: No file text available


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PDF J22587 90-3D 2SKI34 TA8515 westinghouse CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG TA8503F T6950 TD62803 LSI LOGIC product catalog TC8576
Not Available

Abstract: No abstract text available
Text: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Unit in mm Low Forward Voltage : Vp = 0.42V (Typ.) Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak , u cto r R e lia b ility H a n d b o o k . 1997 - 05-07 1/2 1SS321 T O SH IB A If - V


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PDF 1SS321 SS321 500nA SC-59 OT-23MOD) T0-236M0D
CRG09

Abstract: DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
Text: ) (mm) 1SS321 1.25 1.6 (mm) USV 1.6 1.5 2.1 1.25 (mm) ESV 2.9 , ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR 1SS322 1SS393 (1SS423) 1SS294


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PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CRG09 DF2S3.6SC CRH02 CMG07 CRG07 1SS416CT CMZ24 SCJ0004O JDV2S10FS CRS01
lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K zener diode reference guide IC sj 4558 rn4983
Text: No file text available


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PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K zener diode reference guide IC sj 4558 rn4983
CMZB220

Abstract: CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
Text: SCJ0004R (mm) SMQ (SC-61) 2.0 2.1 (mm) (mm) 1SS321 1.25 1.6 (mm) USV , ) 1SS422 VF VF IR IR VF VF IR VF/IR VF/IR VF/IR 1SS322 1SS393


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PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CRS20I40A CES520 CRS10I30C CUS10I40 CRS30I30A TPC6K01 CMG07 6ct smd
smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: No file text available


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PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Not Available

Abstract: No abstract text available
Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V (typ.) l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 12 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 150 (*) mA Average forward current IO 50 (*) mA IFSM 1000 (*) mA Power


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PDF 1SS321 500nA SC-59 OT-23MOD) 23MOD
Tablet PC R116 schematic

Abstract: swap net ns681680 qe r524 VT1631 vt8233a via vt1634 VT2835 vt1634 ns681680 Insyde bios manual
Text: No file text available


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PDF T200C/T210C T200V/T210V LM358 AO3409 2N7002 CM6468500R SKS80-04CT 71-T2000-004) Tablet PC R116 schematic swap net ns681680 qe r524 VT1631 vt8233a via vt1634 VT2835 vt1634 ns681680 Insyde bios manual
Not Available

Abstract: No abstract text available
Text: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1 3 - 2 -E fl M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction


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PDF 1SS322 SS322 SC-70
zc marking code

Abstract: 1SS321 zc marking diode
Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features · Low forward voltage · Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 12 V Reverse Voltage VR 10 V Average Forward Current , 1SS321 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company


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PDF 1SS321 OT-23 zc marking code 1SS321 zc marking diode
DF2S6.8UFS

Abstract: JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
Text: ) (mm) 1SS394 1SS378 2.0 1.2 1.6 (mm) 1SS321 USV 1.6 1.5 2.9 2.1 , IR VF IR IR VF VF IR IR VF/IR VF/IR 1SS322 1SS294 (HN2S07T) 1SS383


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PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 DF2S6.8UFS JDV2S71E SCJ0004N CMG02 JDV2S10FS DF3S6.8ECT DF2S5.6SC CRS06 CMZ24 CMG07
1SS321

Abstract: No abstract text available
Text: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS321 Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Low Reverse Current Small Package VF=0.42V(Typ.) lR=500nA(Max.) SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak Reverse Voltage Reverse Voltage Haximum(Peak Forward Current Average Forward Current Surge Current (t=10ms) Power Dissipation Junction Temperature Storage , 0.42 0.63 3.2 MAX. 1.00 500 4.5 nA PF V UNIT Marking EL 1179 1SS321 1F Vp FORWARD


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PDF 1SS321 500nA OT-23MOD 1SS321
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. 1SS300 1SS301 1SS302 1SS322 1SS3S2 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU HN1D02FU HN1D03FU HN2D01FU HN2D02FU Application High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Low V f switching High voltage High-speed switching Low V f switching Low V f switching High-speed switching High-speed switching High-speed switching High-speed switching High-speed switching Electrical Characteristics {Ta=25°C) Va(V) 80


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
2009 - 1SS321

Abstract: No abstract text available
Text: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low-Voltage High-Speed Switching Low forward voltage: VF = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package: SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VRM 12 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 150* mA , Marking 1 2008-11-11 1SS321 2 2008-11-11 1SS321 RESTRICTIONS ON PRODUCT USE ·


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PDF 1SS321 SC-59 O-236MOD 1SS321
Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
Text: No file text available


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PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 D1N750 Q2N1132 D02CZ10 D1N751
diode MARKING A9

Abstract: transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING
Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS322 Features Low forward voltage:VF(3) = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e VR 40 V M a xim u m (p e a k ) fo rw a rd c u rre n t M a xim u m (p e a k ) re v e rs e v o lta g e IF M 300 mA A v e ra g e fo rw a rd C u rre n t IO 100 mA


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PDF 1SS322 diode MARKING A9 transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING
5252 0.9V 1.5V led driver

Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators TAH8N401K e 420 dual jfet tc7wh125 5252 solar cell chip 2SK3376TT
Text: 1SS321 Standard 1SS294 1SS319 1SS322 1SS357 1SS383 1SS388 1SS392 1SS393 1SS396 HN2S02FU , HN2S03FU 1SS321 1SS357 40 100 0.54 0.6 100 5 40 100 0.54 0.6 100 5 5 30 5 30 , 40 100 0.54 0.6 100 1SS322 40 1SS392 1SS393 Standard 1SS396 0.36 10 40 100


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PDF BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators TAH8N401K e 420 dual jfet tc7wh125 5252 solar cell chip 2SK3376TT
1SS322

Abstract: No abstract text available
Text: TOSHIBA 1SS322 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS322 LOW VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage : Vp (3) = 0.54V (Typ.) • Low Reverse Current : ir = 5/^A (Max.) • Small Package : SC-70 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current SYMBOL VRM VR , subject to change without notice. 1997-05-07 1/2 TOSHIBA 1SS322 Ct - vr 1997-05-07 2/2


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PDF 1SS322 SC-70 25are 1SS322
Not Available

Abstract: No abstract text available
Text: Product specification 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V(Typ) Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Small packag : SC-59(SOT-23MOD) 1.Base 2.Emitter 3.collector Absolute M axim um R atings Ta = 25 Param eter Sym bol R ating U nit VRM M axim um (Peak


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PDF 1SS321 OT-23 SC-59 OT-23MOD)
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: 1SS321 Sin g le Product 1SS294 T 2 pcs S in g le Product 1SS319 1SS344 1SS187 (40V/0.1A) (20V/0.5A , ) 1SS322 1SS357 (2-Lead) 1 2 pcs 1S S 184 1SS226 3 pcs HN 2D01F pcs 1 2 . 6-Lead s 5


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
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