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1SS319(TE85L,F) Toshiba America Electronic Components Diode Small Signal Schottky 45V 0.1A 4-Pin SMQ T/R
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1SS319 datasheet (11)

Part Manufacturer Description Type PDF
1SS319 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
1SS319 Toshiba Japanese - Diodes Original PDF
1SS319 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS319 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS319 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
1SS319 Toshiba DIODE Scan PDF
1SS319TE85L Toshiba 1SS319 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS319(TE85L,F) Toshiba 1SS319 - Diode Small Signal Schottky 45V 0.1A 4-Pin SMQ T/R Original PDF
1SS319TE85LF Toshiba 1SS319TE85LF - Diode Small Signal Schottky 45V 0.1A 4-Pin SMQ T/R Original PDF
1SS319TE85R Toshiba 1SS319 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS319TE85RF Toshiba 1SS319TE85RF - Diode Small Signal Schottky 45V 0.1A 4-Pin SMQ T/R Original PDF

1SS319 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS319

Abstract: No abstract text available
Text: 1SS319 1SS319 : mm : SC-61 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25°C) : 0.013 g () VRM 45 V SC­61 2­3J1A VR 40 V IFM 300* mA , Tstg 55125 °C : (//) ( / ) () () *: 150% 1 2007-11-01 1SS319 , 2007-11-01 1SS319 3 2007-11-01 1SS319 · · · ·


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PDF 1SS319 SC-61 100mA 1SS319
2001 - 1SS319

Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , Test Condition Unit V Marking 1 2001-06-07 1SS319 2 2001-06-07 1SS319


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PDF 1SS319 SC-61 1SS319
1SS319

Abstract: No abstract text available
Text: TOSHIBA 1SS319 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS319 LOW VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage : Vjr (3) = 0.54V (Typ.) • Low Reverse Current : Ir = 5/^A (Max.) • Small Package : SC-61 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current SYMBOL VRM VR , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS319 IF - VF IR - VR CT - VR 961001EAA2' 0 The


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PDF 1SS319 SC-61 961001EAA2' 1SS319
2001 - TOSHIBA DIODE

Abstract: 1SS319
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 , Test Condition Unit V Marking 1 2001-06-07 1SS319 2 2001-06-07 1SS319


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PDF 1SS319 SC-61 TOSHIBA DIODE 1SS319
2007 - 1SS319

Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , Test Condition Unit V Marking 1 2007-11-01 1SS319 2 2007-11-01 1SS319


Original
PDF 1SS319 SC-61 1SS319
2009 - 1SS319

Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5A (max) Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM , Test Condition Unit V Marking 1 2007-11-01 1SS319 2 2007-11-01 1SS319


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PDF 1SS319 SC-61 1SS319
Not Available

Abstract: No abstract text available
Text: 1SS319 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS319 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 , Reliability Handbook. 2000-09-11 1/2 1SS319 961001EAA2' · The information contained herein is


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PDF 1SS319 SC-61 013fied 961001EAA2'
SS31 DIODE

Abstract: SS31
Text: T O SH IB A TOSHIBA DIODE 1SS319 LO W VOLTAGE HIGH SPEED SWITCHING. 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.9 - 0.3 + 0.2 · · · Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-61 LT) LO M A X IM U M RATINGS (Ta = 25°C) < -o o © CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum , Reliability Handbook. 1997-05-07 1/2 T O SH IB A Ip _ Vp IR - V r 1SS319 E * Z D 0 H Ci


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PDF 1SS319 SC-61 961001EAA2' SS31 DIODE SS31
Not Available

Abstract: No abstract text available
Text: T O S H IB A TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS319 1SS319 LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 Unit in mm Low Forward Voltage : Vp (3) = 0.54V (Typ.) Low Reverse Current : I r = 5¿/A (Max.) Small Package : SC-61 1 .5 0 - 0 .1 5 5° CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power , 1997-05-07 1/2 T O S H IB A Ip _ Vp Ir vr 1SS319 REVERSE VOLTAGE Vr (V) Ct - VR 4


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PDF 1SS319 SC-61 SC-61
Not Available

Abstract: No abstract text available
Text: 1SS319 T O SH IB A TO SHIBA DIODE 1 SS31 9 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.2 2.9 - 0 .3 • • • Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package : SC-61 -H 0.85 0.55 + 0.25 LT) LO <- o o © M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC , k . 1997-05-07 1/2 1SS319 T O SH IB A ip _ Vf Ct - 0 4 8 12 16 ir


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PDF 1SS319 SC-61
1SS319

Abstract: No abstract text available
Text: 1SS319 FORWARD CURRENT I p (A ) FOIIVVAIU) VOLTAGE Vf (V) REVERSE CURRENT - GJ I R (A


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PDF SC-61 1SS319 1SS319
1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
Text: Super-Mini Diodes (SOT-23MOD, SOT-143MOD.) Electrical Characteristics (Ta=25°C) Type No. Application V r(V) 80 80 80 80 80 80 80 200 80 40 200 F6 Mark Equivalent other package Type No. 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 Series Remarks IO(mA) 100 100 100 100 100 100 100 trr (ns) 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 107YP 1.6TYP Connection 1SS181 1SS184 1SS187 1SS190 1SS193 1SS196 1SS226 1SS250 1SS272 1SS294 1SS306 1SS307 1SS308 1SS309 1SS311 1SS319 1SS321


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
1999 - Mitsubishi flash card

Abstract: CEP50 ic not buffer 10D254 M30624FG IC CARD CONNECTOR mitsubishi p66 mitsubishi memory card
Text: =0.5V(max) IOL=2mA Output circuit 1SS319 Output signal (RESET*) M16C61P70output port (N-channel , ) Input signal (BUSY) IIL=0.5mA(max) Vcc=5V Various IC specifications TC7W125FU: TC7WT125FU: 1SS319


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PDF MSA0655-G01) Z1-MS-FWGM16C M16C61P70output TC7WT125FU M16C61P62 M16C61P60 TC7W125FU: TC7WT125FU: 1SS319 MAX662A Mitsubishi flash card CEP50 ic not buffer 10D254 M30624FG IC CARD CONNECTOR mitsubishi p66 mitsubishi memory card
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: 1SS321 Sin g le Product 1SS294 T 2 pcs S in g le Product 1SS319 1SS344 1SS187 (40V/0.1A) (20V/0.5A


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
1ss283

Abstract: 495h HM 1211 1SS281 1SS276 ISS319 HSM88WA 1ss237 l497 1SS246
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz HSR276 1ss283 495h HM 1211 1SS281 1SS276 ISS319 HSM88WA l497
1SS281

Abstract: 1ss237 1SS283 1SS246 1SS285 1SS282 1SS276 1SS271 HSR276 HSK151
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 1SS283 1SS285 1SS282 1SS276 1SS271 HSR276 HSK151
iss319

Abstract: 1SS283 1SS281 1SS237 HSM88WA 1SS246 HSR2 HSR276 iSS295 1SS286
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm107s iss319 1SS283 1SS281 HSM88WA HSR2 HSR276 iSS295 1SS286
1ss237

Abstract: 1SS281 1SS276 1SS239 1SS271 1SS283 1SS286 HSR276 iss319 1SS282
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 1SS276 1SS239 1SS271 1SS283 1SS286 HSR276 iss319 1SS282
1SS281

Abstract: 1SS286 1SS285 1SS283 1SS282 1SS276 1SS271 1SS246 1SS239 HSR276
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 1SS286 1SS285 1SS283 1SS282 1SS276 1SS271 1SS239 HSR276
1SS281

Abstract: 1SS246 "1SS286" 1SS285 1SS283 1SS282 1SS276 1SS271 1SS239 HSR276
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 "1SS286" 1SS285 1SS283 1SS282 1SS276 1SS271 1SS239 HSR276
1ss283

Abstract: 1SS237 1SS281 HSR276 HSR277 1SS2371 1SS282 1SS276 1SS271 1SS246
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


OCR Scan
PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm276sr 1ss283 1SS281 HSR276 HSR277 1SS2371 1SS282 1SS276 1SS271
1SS276

Abstract: 1SS281 1SS283 1SS246 1SS285 1SS282 p150n 1SS271 1SS239 HSR276
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


OCR Scan
PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS276 1SS281 1SS283 1SS285 1SS282 p150n 1SS271 1SS239 HSR276
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 1SS311 196 02CZ2.4 133 02DZ3.9 139 1SS319 199 02CZ2.7 133 02DZ4.3 139 , 1000 17 1SS319 [ 2 ] (3) ESD ESD () (V) fSC USC (SOD-323) sESC , 100 25 0 A4 1SS322 1SS294 1SS319 * 1SS384 100 10 * * 200 100 20 , 25.0 0 18 A4 0.30 5 40 0 A5 0.50 100 * 1SS319 150 40 , 10 USM S-MINI SMQ 0.30 25 0 A4 1SS322 1SS294 1SS319 40


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
1SS283

Abstract: 1SS281 1SS276 55nF 1SS285 1SS282 1SS271 1SS246 1SS239 HSR276
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz i15-0Â 1SS283 1SS281 1SS276 55nF 1SS285 1SS282 1SS271 1SS239 HSR276
1SS283

Abstract: 1SS281 HSR276 iss319 1SS276 1SS366 1SS282 1SS271 1SS246 1SS239
Text: , lo=l. 5mA) 420D 1ss319 45 40 300 100 2 100 0. 6 5 40 25 0 10 ¡m^mû 559A 1SS321 ss ss 12 10 150


OCR Scan
PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz 81MIN 1SS283 1SS281 HSR276 iss319 1SS276 1SS366 1SS282 1SS271 1SS239
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