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1SS306TE85LF Toshiba America Electronic Components Diode Switching 250V 0.1A 4-Pin SMQ T/R
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1SS306 datasheet (12)

Part Manufacturer Description Type PDF
1SS306 Kexin Silicon Epitaxial Planar Type Original PDF
1SS306 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
1SS306 Toshiba Japanese - Diodes Original PDF
1SS306 TY Semiconductor Silicon Epitaxial Planar Type - SOT-143 Original PDF
1SS306 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS306 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS306 Toshiba Toshiba Shortform Catalog Scan PDF
1SS306 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS) Scan PDF
1SS306 Toshiba DIODE Scan PDF
1SS306TE85L Toshiba 1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS306TE85LF Toshiba 1SS306TE85LF - Diode Switching 250V 0.1A 4-Pin SMQ T/R Original PDF
1SS306TE85R Toshiba 1SS306 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

1SS306 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS306

Abstract: AP-150 VR200
Text: 1SS306 1SS306 : : : : : mm SC-61 VF = 0.90V () trr = 30ns () CT = 1.5pF () JEDEC JEITA (Ta = 25°C) : 0.013 g () VRM 250 V SC­61 2­3J1A VR 200 V IFM 300 , ) (//) ( /) () () *: 150% 1 2007-11-01 1SS306 (Ta = 25°C) IF = , A 2 2007-11-01 1SS306 1. (trr) 3 2007-11-01 1SS306 · · ·


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PDF 1SS306 SC-61 100mA 1SS306 AP-150 VR200
2001 - 1SS306

Abstract: No abstract text available
Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC , Condition 1 Fig.1 Unit V µA 2001-06-07 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS306 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA


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PDF 1SS306 SC-61 10mstransportation 1SS306
2001 - 1SS306

Abstract: No abstract text available
Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-61 Maximum , Test Condition 1 Fig.1 Unit V µA 2001-06-07 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2001-06-07 1SS306 RESTRICTIONS ON PRODUCT USE 000707EAA


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PDF 1SS306 SC-61 1SS306
1SS306

Abstract: No abstract text available
Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications Unit in mm Low forward voltage : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM , Reliability Handbook. 2000-09-19 1/2 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit


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PDF 1SS306 SC-61 961001EAA2' 1SS306
2007 - 1SS306

Abstract: No abstract text available
Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , .1 Unit V A 2007-11-01 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS306 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained


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PDF 1SS306 SC-61 1SS306
2009 - 1SS306

Abstract: No abstract text available
Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) Fast reverse recovery time : trr = 30ns (max) Small total capacitance : CT = 1.5pF (typ.) Small package : SC , Condition 1 Fig.1 Unit V A 2007-11-01 1SS306 Fig.1 Reverse Recovery Time (trr) Test Circuit 2 Marking 2007-11-01 1SS306 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and


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PDF 1SS306 SC-61 1SS306
Not Available

Abstract: No abstract text available
Text: TO SHIBA TO SHIBA DIODE 1SS306 HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. 1SS306 SILICON EPITAXIAL PLANAR TYPE Unit in mm · · · · Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp (2) = 0.90V (Typ.) : trr = 30ns (Max.) : CT = 1.5pF (Typ.) : SC-61 SYMBOL V r m M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse , b o o k . 1997-05-07 1/2 TO SHIBA If - V f IR Vr 1SS306 REVERSE VOLTAGE Ct - V r


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PDF 1SS306 SC-61
1SS306

Abstract: No abstract text available
Text: TOSHIBA 1SS306 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS306 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm • Low Forward Voltage : Vp (2) = 0.90V (Typ.) • Fast Reverse Recovery Time : trr = 30ns (Max.) • Small Total Capacitance : C>r = 1.5pF (Typ.) • Small Package : SC-61 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage Vrm 250 V , TOSHIBA Semiconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS306 If - VF IR - VR


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PDF 1SS306 SC-61 SC-61 961001EAA2' 1SS306
Not Available

Abstract: No abstract text available
Text: 1SS306 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage,High Speed Switching Applications l Low forward voltage Unit: mm : VF (2) = 0.90V (typ.) l Fast reverse recovery time : trr = 30ns (max) l Small total capacitance : CT = 1.5pF (typ.) l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 (*) mA Average forward


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PDF 1SS306 SC-61 100mA
Not Available

Abstract: No abstract text available
Text: 1SS306 TO SHIBA 1SS306 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. > - 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp (2) = 0.90V (Typ.) : trr = 30ns (Max.) : CT = 1.5pF (Typ.) : SC-61 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC , TOSHIBA S e m ico n d u cto r R e lia b ility H a n d b o o k . 1997-05-07 1/2 1SS306 TO SHIBA


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PDF 1SS306 SC-61
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE 1SS306 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. 1 S S 3 Q6 SILICON EPITAXIAL PLANAR TYPE Unit in mm + · · · · Low Forward Voltage Fast Reverse RecoveryTime : Small Total Capacitance Small Package : Vp (2) = 0.90V (Typ.) tr r =30n s (Max.) : Ct = 1.5pF (Typ.) ; SC-61 2.9 - 0.2 0.3 0.85 + M A X IM U M RATINGS (Ta = 25°C) 1. 5 0 - 0.25 0.15 , Handbook. 1997 05-07 1/2 - TOSHIBA If V f !R V r 1SS306 REVERSE VOLTAGE Vr (V) Ct -


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PDF 1SS306 SC-61 961001EAA2'
Not Available

Abstract: No abstract text available
Text: Product specification 1SS306 Unit: mm Features Low forward voltage :VF(2) = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * Maximum (peak) reverse voltage Reverse voltage IFSM 2 A Power


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PDF 1SS306 100mA
1SS306

Abstract: SMD Marking X1 MARKING A3
Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS306 Unit: mm Features Low forward voltage :VF(2) = 0.9 V(Typ) Fast reverse recovery time :trr = 30 ns (Typ) Small total capacitance :CT = 1.5 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VRM 250 V VR 200 V Average forward current * IO 100 mA Maximum (peak) forward current * IFM 300 mA Surge current (10 ms) * Maximum (peak) reverse voltage Reverse


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PDF 1SS306 100mA 1SS306 SMD Marking X1 MARKING A3
1SS306

Abstract: No abstract text available
Text: 1SS306 . Low Forward Voltage SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Unit in r r a n : V f = 0.92V(Typ.) + 0.2 2.9 -0.3 . Fast Reverse Recovery Time : trr= 60ns(Max.) . Small Total Capacitance . Small Package : Ct = 2 .2pF(Typ.) : SC-61 L-ES 0.55 2 EE+0.25 1.50-0.15 MAXIHUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximuin(Peak) Forward Current Average Forward Current Surge Current (10ms) Power


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PDF 1SS306 SC-61 100mA 1SS306
1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
Text: Super-Mini Diodes (SOT-23MOD, SOT-143MOD.) Electrical Characteristics (Ta=25°C) Type No. Application V r(V) 80 80 80 80 80 80 80 200 80 40 200 F6 Mark Equivalent other package Type No. 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 1S1585 Series Remarks IO(mA) 100 100 100 100 100 100 100 trr (ns) 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 1.6TYP 107YP 1.6TYP Connection 1SS181 1SS184 1SS187 1SS190 1SS193 1SS196 1SS226 1SS250 1SS272 1SS294 1SS306 1SS307 1SS308 1SS309 1SS311 1SS319 1SS321


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
ISS302

Abstract: iss314 1SS317 1SS289 1SS288 1SS287 ISS362 iss355 ISS301 2DL15A
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 50KHz ISS302 iss314 1SS317 1SS287 ISS362 iss355 ISS301 2DL15A
ISS302

Abstract: 1SS301 1SS290 1SS289 1SS288 1SS287 ISS362 iss355 iss314 ISS312
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 200mW ISS302 1SS301 1SS287 ISS362 iss355 iss314 ISS312
high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Text: le Product 1SS250 n M u ltip le 1SS306 Sin ile Procluct 1SS311 Sm all Product (2125 Type


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PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
1SS292

Abstract: iss304 1SS291 1SS290 1SS289 1SS288 1SS287 ISS362 ISS312 ISS302
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 50KHz iss304 1SS287 ISS362 ISS312 ISS302
1SS291

Abstract: 2DL15A 1SS301 1SS300 1SS292 ISS302 1SS290 1SS289 1SS288 1SS287
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 50KHz ap01c 2DL15A 1SS301 1SS300 ISS302 1SS287
diode Z47

Abstract: z43 diode Z5.6 Z3.3 02CZ5 S360 DIODE diode zener z6 S368 diode Z27 1s diode
Text: - - - 1SS306 - - - - - - - 1S S373 - - - 1S S367 - - - - _ - - -


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PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode zener z6 S368 diode Z27 1s diode
2DL15

Abstract: 1SS287 1SS301 1SS300 1SS292 1SS291 1SS290 1SS289 1SS288 1SS318
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 P-200mW 26MIN 2DL15 1SS287 1SS301 1SS300 1SS318
ISS352

Abstract: iss355 iss314 ISS302 1SS287 2DL15A ISS362 2U20 iss353 DA106K
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 50KHz ISS352 iss355 iss314 ISS302 1SS287 2DL15A ISS362 2U20 iss353 DA106K
1SS291

Abstract: 2DL15A 1SS301 1SS300 1SS292 1SS290 1SS289 1SS288 1SS287 iss314
Text: -K 31'/) 205D 1SS305 0® 100 100 300 100 2 0. 85 10 0. 1 100 4 3 205A 1SS306 JK2 250 200 300


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PDF I53-- 1SS287 1SS288 1SS289 1SS290 1SS291 1SS292 1SS300 81MIN 2DL15A 1SS301 1SS300 1SS287 iss314
2004 - Flashlamp

Abstract: scr trigger battery charger LDT565630T-002 330FW13AK6325 PERKIN ELMER BGDC0007PKI5700 BGDC0007PKI5700 S6A37 jim Williams SCR TRIGGER PULSE COIL-BO-02
Text: 10k C1: RUBYCON 330FW13AK6325 D1: TOSHIBA DUAL DIODE 1SS306 , CONNECT DIODES IN SERIES D2


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PDF DN345 dn345f Flashlamp scr trigger battery charger LDT565630T-002 330FW13AK6325 PERKIN ELMER BGDC0007PKI5700 BGDC0007PKI5700 S6A37 jim Williams SCR TRIGGER PULSE COIL-BO-02
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