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1SS295(TE85L,F) Toshiba America Electronic Components Diode Schottky 4V 0.03A 3-Pin S-Mini T/R
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1SS295 datasheet (11)

Part Manufacturer Description Type PDF
1SS295 Kexin UHF Band Mixer Applications Original PDF
1SS295 TY Semiconductor UHF Band Mixer Applications - SOT-23 Original PDF
1SS295 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS295 Others High Frequency Device Data Book (Japanese) Scan PDF
1SS295 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS295 Toshiba DIODE SCHOTTKY DIODE 4V 0.03A 3(1-3G1G) Scan PDF
1SS295 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
1SS295 Toshiba DIODE (UHF BAND MIXER APPLICATIONS) Scan PDF
1SS295TE85L Toshiba DIODE SCHOTTKY DIODE 4V 0.03A 3(1-3G1G) T/R Scan PDF
1SS295(TE85L,F) Toshiba 1SS295 - Diode Schottky 4V 0.03A 3-Pin S-Mini T/R Scan PDF
1SS295TE85R Toshiba 1SS295 - DIODE SILICON, UHF BAND, MIXER DIODE, Microwave Mixer Diode Scan PDF

1SS295 Datasheets Context Search

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1SS295

Abstract: No abstract text available
Text: 1SS295 1SS295 UHF · : mm · · : CT = 0.1 pF () : VF = 10 mV () (Ta = 25°C) VR 4 V IF 30 mA Tj 125 °C Tstg -55~125 °C , 2007-11-01 1SS295 IF - VF IR - V R 30 30 Ta = 75°C -25 5 3 0.1 0.3 , ) 2 2007-11-01 1SS295 · · · · "" ·


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PDF 1SS295 SC-59 1SS295
ss295

Abstract: DIODE schottky 0.2v
Text: TO SHIBA TOSHIBA DIODE 1SS295 UHF BAND M IXER APPLICATIONS. 1 SS295 : AVjr= 10mV (Max.) : ACT = 0.1pF(Max.) SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm · · · Small Package Small Delta Forward Voltage Small Delta Total Capacitance M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR If Tj , to change w ith o u t notice. # # 1997- 05-08 1/2 TO SHIBA 1SS295 If - V f


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PDF 1SS295 SS295 ss295 DIODE schottky 0.2v
Not Available

Abstract: No abstract text available
Text: SILICO N EP IT A X IA L S C H O T T K Y B A R R IE R T Y P E DIODE - 1SS295 U n it in m m UHF B A N D M IX E R A PPLIC A TIO N S. · · · Small Package Small Delta Forward Voltage Small Delta Total Capacitance : A V j'= lOmV(Max.) : ACx = 0.1pF (Max.) M A X IM U M R A T IN G S (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature , - 119 TOTAL CAPACITANCE C r (pF> O 1SS295 FORW ARD CURRENT IF (mA) FORWARD VOLTAGE VF


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PDF -1SS295 1SS295
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS295 1 <; <; i Q < 5 UHF BAND MIXER APPLICATIONS. · · · Small Package Small Delta Forward Voltage Small Delta Total Capacitance AVjr = 10mV (Max.) : a Ct = 0.IpF (Max.) : MAXIMUM RATINGS (Ta = 255C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL RATING UNIT 4 V , TOSHIBA 1SS295 ip - vf IR - VR FORWARD VOLTAGE VF tV) REVERSE VOLTAGE VR (V) Ct - V r


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PDF 1SS295 100MHz
ss295

Abstract: No abstract text available
Text: 1SS295 TO SHIBA TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr= 10mV (Max.) : ACT = 0.1pF(Max.) M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING 4 VR 30 If 125 Tj -5 5 -1 2 5 Tstg CHARACTERISTIC Reverse Voltage Forward , to change w ith o u t notice. 1997- 05-08 1/2 1SS295 TO SHIBA If - V f FORWARD


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PDF 1SS295 SS295 ss295
1SS295

Abstract: No abstract text available
Text: TOSHIBA 1SS295 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1 S S 2 9 5 UHF BAND MIXER APPLICATIONS. • Small Package • Small Delta Forward Voltage • Small Delta Total Capacitance : AVjp = lOmV (Max.) : ACt = O.lpF (Max.) MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL , 1SS295 CT - VR Ta = 25°C f= 1MHz 0.1 0.3 0.5 1 3 5 REVERSE VOLTAGE Vr (V) 2 2001-05-31 TOSHIBA 1SS295 RESTRICTIONS ON PRODUCT USE


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PDF 1SS295 SC-59 1SS295
ss295

Abstract: 1SS295 SS29
Text: TOSHIBA 1SS295 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1 SS29 5 UHF BAND MIXER APPLICATIONS. • Small Package • Small Delta Forward Voltage • Small Delta Total Capacitance : AVjr = lOmV (Max.) : ACt = O.lpF (Max.) MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 4 V Forward , /2 TOSHIBA 1SS295 If - VF IR - Vr


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PDF 1SS295 SC-59 ss295 1SS295 SS29
1SS295

Abstract: No abstract text available
Text: 1SS295 · · · SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF B A N D M IXER APPLICATIONS. + 0 .5 2 .5 - 0 .3 Unit in mm + 0 .2 5 1.5 - 0 . 15^ Small Package Small Delta Forward Voltage Small Delta Total Capacitance : AVp>= lOmV (Max.) : ACx = 0.1pF (Max.) E£- -e M A X IM U M RATINGS (Ta = 25°C) J-LE SYMBOL VR IF Tj Tstg ÖÖ +1 - ·o CHARACTERISTIC Reverse Voltage , ET 1152 1SS295 if - Vf IR - V r FORWARD CURRENT IF (mA) 0 1 2 3 4


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PDF 1SS295 SC-59 100MHz 1SS295
2SC2499

Abstract: 1SV252 transistor 2sc2499 2sc4200 Schottky Diode SC-62 2sa1161 NPN Transistor TO92 300ma THS117, THS119 THS126 VCEO150V
Text: * Twin 1SS271* 1SS295 * 4 in 1 ù : Diode 1SV261* 1SV257* 1SV258* 1SV260* 1SS315* S3275* (FM8


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PDF 300mA 400MHz 200MHz 2SC2705 2SA1145 2SC4203 O-126 2SC3613 O-220AB T0-220 2SC2499 1SV252 transistor 2sc2499 2sc4200 Schottky Diode SC-62 2sa1161 NPN Transistor TO92 300ma THS117, THS119 THS126 VCEO150V
3120 tuner

Abstract: C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
Text: 1SV238 * 1SV262 1SV269 1SS314 1S V 2 16 % % % % * 1SV254 * 1SV256 1SS295 * 1SV254 , Attinuater, Switch PIN Single Tw in Single 1SV237 1SV128 1SV172 1SS154 1SS271 1SS295 * 1SV252 1SS239


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PDF 3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
smd marking BH

Abstract: BH Ra marking BH 1SS295 datasheet transistor smd bh datasheet transistor smd marking bh
Text: Diodes SMD Type UHF BAND MIXER APPLICATIONS 1SS295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ÄVF = 10 mV(Max) 1 Small Delat total capacitance: ÄCT = 0.1pF(Max) 0.55 Small Delat forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a


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PDF 1SS295 OT-23 smd marking BH BH Ra marking BH 1SS295 datasheet transistor smd bh datasheet transistor smd marking bh
Not Available

Abstract: No abstract text available
Text: Product specification 1SS295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ÄVF = 10 mV(Max) 1 Small Delat total capacitance: ÄCT = 0.1pF(Max) 0.55 Small Delat forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it VR R e


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PDF 1SS295 OT-23
isv149

Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV255 ISV103 1SS239 ISV102
Text: MIX Application Type No. 1SS154 1SS239 1SS271 S3275 1SS242 1SS295 1SS315 Package S-MINI (Single


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PDF ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239
1ss283

Abstract: 1SS237 1SS281 HSR276 HSR277 1SS2371 1SS282 1SS276 1SS271 1SS246
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm276sr 1ss283 1SS281 HSR276 HSR277 1SS2371 1SS282 1SS276 1SS271
1SS276

Abstract: 1SS281 1SS283 1SS246 1SS285 1SS282 p150n 1SS271 1SS239 HSR276
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS276 1SS281 1SS283 1SS285 1SS282 p150n 1SS271 1SS239 HSR276
tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Text: 2SK2322 1SS242 1SS315, 1SS295 2SC2238B 2SC4793 2SK892 2SK2386 1SV153 1SV214


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PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
2005 - TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
Text: BG 1SS271 BD 1SS295 BH 1SS312 1SV278 T1 224 1SV279 T8 , 1SS364 JDS2S03S UHF 1SV214 1SS295 1SV278 1SV215 1SV217 1SV231 1SV232 Tuning , 1SV252 1SV312 1SS154 Single 1SS315 JDH2S01T Mixer SBD 1SS271 Twin 1SS295 1SV229 , UHF MIX (pF) VR (V) 1SS295 VHF~ S Band MIX (V) IF (mA) *5 30 0.25 2 , S-MINI USC MIX Schottky Diode UHF 1SS295 (double) 1SS315 TESC JDH2S01T SSM


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
1SS281

Abstract: 1SS286 1SS285 1SS283 1SS282 1SS276 1SS271 1SS246 1SS239 HSR276
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 1SS286 1SS285 1SS283 1SS282 1SS276 1SS271 1SS239 HSR276
1SS281

Abstract: 1SS246 "1SS286" 1SS285 1SS283 1SS282 1SS276 1SS271 1SS239 HSR276
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 "1SS286" 1SS285 1SS283 1SS282 1SS276 1SS271 1SS239 HSR276
2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
Text: Applications u se USM % 1SV99 1SV128 1SV172 1SSI54 1SS271 1SS295 1SS239 1SV252 Attinuater, Switch , Frequency Equipm ent> SMC Applications 'N% S-MINI use USM SSM % 1SS295 % 1SV214 1SV216


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PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC1815O 2SC1815 NPN SOT-23 2SC 1207
1SS283

Abstract: MZN 1000 S 1SS281 1SS295 1SS282 SS28
Text: 1 TjCC) 100 AVFW) 10. 00 I f=10mA • 1SS295 S2 TO: UHF kä : sâifflgmsâî/m ffi : 2 (BAO Vr


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PDF 1SS282 1SS295 1SS283 MZN 1000 S 1SS281 SS28
1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
Text: 1SV128 1SV 172 1SS268 1SS269 1SS271 1SS295 1SV160 1SV225 1SV228 1SV242 Application UHF-S Band, Mix, Det


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PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SV103 1SV99 1SS337 J9 1SS SOT mark 1SS241
1SS283

Abstract: 1SS281 1SS276 55nF 1SS285 1SS282 1SS271 1SS246 1SS239 HSR276
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz i15-0Â 1SS283 1SS281 1SS276 55nF 1SS285 1SS282 1SS271 1SS239 HSR276
1ss283

Abstract: 495h HM 1211 1SS281 1SS276 ISS319 HSM88WA 1ss237 l497 1SS246
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz HSR276 1ss283 495h HM 1211 1SS281 1SS276 ISS319 HSM88WA l497
1SS281

Abstract: 1ss237 1SS283 1SS246 1SS285 1SS282 1SS276 1SS271 HSR276 HSK151
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 1SS283 1SS285 1SS282 1SS276 1SS271 HSR276 HSK151
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