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1SS294,LF Toshiba America Electronic Components DIODE SCHOTTKY 40V 100MA SMINI
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1SS294 Toshiba America Electronic Components Chip One Exchange 10,890 - -
1SS294 (TE85L) Toshiba Corporation Bristol Electronics 4,175 - -
1SS294-TE85L Toshiba America Electronic Components Bristol Electronics 5,140 $0.75 $0.11
1SS294,LF Toshiba America Electronic Components Avnet - $0.05 $0.04
1SS294,LF Toshiba America Electronic Components Chip1Stop 3,000 $0.21 $0.07
1SS294,LF Toshiba America Electronic Components Chip1Stop 3,012 $0.19 $0.08
1SS294(F) Toshiba America Electronic Components RS Components 5 £0.40 £0.06
1SS294(TE85L,F) Toshiba America Electronic Components Avnet - - -
1SS294(TE85L,F) Toshiba America Electronic Components Avnet - €0.11 €0.05
1SS294(TE85L,F) Toshiba America Electronic Components Avnet - - -
1SS294(TE85L,F) Toshiba America Electronic Components Chip1Stop 5,600 $0.42 $0.38
1SS294(TE85L) Toshiba America Electronic Components Chip1Stop 1,800 $1.12 $0.94

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1SS294 datasheet (18)

Part Manufacturer Description Type PDF
1SS294 EIC Semiconductor Schottky Barrier Diodes Original PDF
1SS294 Kexin Low Voltage High Speed Switching Original PDF
1SS294 Toshiba DIODE SCHOTTKY DIODE 45V 0.1A 3(1-3G1B) Original PDF
1SS294 Toshiba Diode - Silicon Epitaxial Schottoky Barrier Type Original PDF
1SS294 Toshiba Japanese - Diodes Original PDF
1SS294 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
1SS294 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS294 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS294 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
1SS294 Toshiba DIODE Scan PDF
1SS294S,LF Toshiba 1SS294S - X34 PB-F S-MINI SHOTTKY BARRIER DIODE (LF), IFM=300MA Original PDF
1SS294T5LFT Toshiba 1SS294 - Schottky (Diodes & Rectifiers) Diode Original PDF
1SS294T5LT Toshiba 1SS294T5LT - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original PDF
1SS294TE85L Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS294TE85L2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS294(TE85L,F) Toshiba 1SS294 - Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R Original PDF
1SS294TE85R Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS294TE85R2 Toshiba 1SS294 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

1SS294 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS294

Abstract: No abstract text available
Text: 1SS294 1SS294 : mm : SC-59 : VF (3) = 0.54V () : IR = 5A () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 45 V , Tstg 55125 °C : (//) ( / ) () () 1 2007-11-01 1SS294 (Ta = 25 , CT VR = 0, f = 1MHz 18 25 pF 2 2007-11-01 1SS294 3 2007-11-01 1SS294 · · · · "" · · · ·


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PDF 1SS294 SC-59 236MOD 100mA 1SS294
S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Mark A3 B3 C3 Similar 1S1585 1S1585 1S1585 1SS294 Remarks Anode common Cathode common Series , 1S1585 1SS294 1SS377 2SS2S0 1SS374 1SS377 1S1585 1S158S 1S1585 1S1585 1S1585 FS Schottky barrier Series , EE33 S3 1SS294 Schottky barrier 1SS373 Low VF switching 10 100 S4 1SS367


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PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
2003 - mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Text: 1SS272 169 015AZ12 127 02CZ39 133 1SS294 172 015AZ13 127 02CZ43 133 , 1SS357 1SS322 1SS383 HN2S02FU 1SS393 1SS294 1SS392 1SS396 VR 1SS348 80 , 1SS357 1SS294 40 0 S4 1SS367 1SS394 50 3.9 0 A7 1SS406 , 100 5 40 0.6 100 18 0 A9 1SS357 1SS294 ×2 * HN2D01JE 100 80 , 40 300 100 5 40 0.60 100 25 0 S3 1SS294 0.30 5 * 1SS367


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PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TOSHIBA 2N3055 TLR103 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
2001 - 1SS294

Abstract: No abstract text available
Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , V Marking 1 2001-06-07 1SS294 2 2001-06-07 1SS294 RESTRICTIONS ON PRODUCT


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PDF 1SS294 SC-59 1SS294
2001 - TOSHIBA DIODE

Abstract: 1SS294
Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , 2001-06-07 1SS294 2 2001-06-07 1SS294 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA


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PDF 1SS294 SC-59 TOSHIBA DIODE 1SS294
2007 - 1SS294

Abstract: No abstract text available
Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 1 2007-11-01 1SS294 2 2007-11-01 1SS294 RESTRICTIONS ON PRODUCT USE 20070701


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PDF 1SS294 SC-59 O-236MOD 1SS294
transistor XM

Abstract: marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech
Text: 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features · Small surface mounting type · Low reverse current · Low forward voltage 3 1 Absolute Maximum Ratings (Ta = 25 OC) Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit Maximum Peak Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Forward Current IO , 1SS294 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company


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PDF 1SS294 OT-23 transistor XM marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech
Not Available

Abstract: No abstract text available
Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current , information contained herein is subject to change without notice. 2000-09-11 1/2 1SS294


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PDF 1SS294 SC-59 O-236MOD 25used
1SS294

Abstract: No abstract text available
Text: TOSHIBA 1SS294 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. • Low Forward Voltage : Vp (3) = 0.54V (Typ.) • Low Reverse Current : Ir = 5/^A (Max.) • Small Package : SC-59 MAXIMUM RATINGS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 45 V Reverse Voltage Vr 40 V Maximum (Peak , 1SS294 IF - vf IR - Vr A /A


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PDF 1SS294 SC-59 O-236MOD 1SS294
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2 . 5 - 0.3 + 0.25 1. 5 - 0.15 Low Forward Voltage : Vp (3) = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô E2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum , w itho ut notice. 1997-05-07 1/2 TOSHIBA 1SS294 ip - vf IR - Vr FORWARD


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PDF 1SS294 O-236MOD SC-59
1SS294

Abstract: No abstract text available
Text: 1SS294 LOW VOLTAGE HIGH SPEED SWITCHING. . Low Forward Voltage . Low Reverse Current . Small Package SC-59 SILICON EPITAXIAL PLANAR TYPE Unit in mm V f = 0 .54V(Typ.) lR=5MA(Max.) +0.5 2.5 -0.3 +0.25 1.5-0.15 03 1 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage Maximura(Peak) Forward Current Average Forward Current Power Dissipation , 1SS294


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PDF 1SS294 SC-59 100mA 1SS294
Not Available

Abstract: No abstract text available
Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF (3) = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 150


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PDF 1SS294 236MOD 100mA
2007 - 1SS294

Abstract: SOT23 DIODE marking CODE AV
Text: Certificate TH97/10561QM 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE SOT-23 PRV : 45 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small surface mounting type Low forward voltage Low reverse current Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 , CHARACTERISTIC CURVES ( 1SS294 ) FIG.1 - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS. FORWARD VOLTAGE


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PDF TH97/10561QM 1SS294 OT-23 TW00/17276EM OT-23 1SS294 SOT23 DIODE marking CODE AV
2009 - 1SS294

Abstract: No abstract text available
Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF (3) = 0.54V (typ.) Low reverse surrent : IR = 5A (max) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward , 1 2007-11-01 1SS294 2 2007-11-01 1SS294 RESTRICTIONS ON PRODUCT USE · Toshiba


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PDF 1SS294 SC-59 O-236MOD 1SS294
Not Available

Abstract: No abstract text available
Text: 1SS294 TO SHIBA TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.5 2.5-0.3 Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 • • • + 0.25 , 1.5-0.15 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage , VOLTAGE Vf (V) REVERSE CURRENT Ir (A) REVERSE VOLTAGE 1SS294


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PDF 1SS294 SS294 SC-59
2012 - 8D139

Abstract: BLM41AF800SN1 6MCM106MA MNR35P3RJ103 S15829J Y1 XTAL 30Mhz ET-0138 3a54 upc2933t SLR-322-R
Text: U2 uPC2933T D4 1SS294 SLR-322-MG 1 C7 47uF/16V 3 RESETB C3 47uF/16V POWER 2 D1 1SS294 CP9 0.1uF TTP1 TP1 +3.3V GND TP TTP C2 12pF C1 12pF 3.3v , ,JP1M0, JP2M1 3 2 1 3 2 1 D3 1SS294 D2 1SS294 GND 5v 1 2 RESET 4 , , D3, D4 D 1SS294 4 4 Y1 AT-49(30MHz) 1 5 R1, R3, R4, R9, R12 R


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PDF PD720122 ET-0138 S16801JJ1V0UM00 S16801JJ1V0UM TMMS-115-01-F-Q FB-2345B 8D139 BLM41AF800SN1 6MCM106MA MNR35P3RJ103 S15829J Y1 XTAL 30Mhz ET-0138 3a54 upc2933t SLR-322-R
2013 - RK73K2A

Abstract: GRM40B103K50 omron cp10 SRA16VB22M bpy 79 34-FG AVDD25 10MCM106MA LBA48 GRM40F105Z16
Text: SDA 5v R44 10K D2 1SS294 R37 5.6K D1 10k 8 7 6 5 10K C1 2.2uF/16V , C11 10uF/16V C12 0.01uF TP2 5v D5 1SS294 5v 1 2 3 4 1 2 3 U3 IN OUT , 1SS294 Toshiba 5 OMRON 1 IDE 20 QZF-B4LFDG7A2K Honda 1 USB XG8W , D5 1SS294 12 FG FG 4 3 2 1 CN1 UBB-4R-D10T-1 POWER 3 4 FG C14 2.2uF/50V CPU3.3 1 2 8 7 6 5 5v R44 10K D2 1SS294 R37 5.6K CP1 0.1uF


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PDF ET-0148 PD720130USB2 S16429JJ2V0UM00 S16429JJ2V0UM IOCS16B XG4C-4031 RK73K2A GRM40B103K50 omron cp10 SRA16VB22M bpy 79 34-FG AVDD25 10MCM106MA LBA48 GRM40F105Z16
NMR14

Abstract: r2533 XG4C-4031 BLM21PG600SN1 DD11 TANTAL 16V DD15 M24C32 1SS294 Bpy 43
Text: 5 4 3 2 1 3.3V 3.3V 3.3V U2 A0 A1 A2 GND VCC WP SCL SDA D1 1SS294 R1 10k 8 7 6 5 ST M24C32 R3 R4 C2 47 12pF C1 CP1 D R5 1.5k P 1 2 3 4 12pF C3 22uF/16V 10k 0.1uF D N Y1 30MHz 5V 2.5V 3.3V R7 1K R13 2 3 1 4 FG 39(1%) 2.43K(1%) FG 39(1%) R12 FG R11 4 3 2 , 1SS294 DA0 DA2 CS0B CS1B 8 7 6 5 R26 5.6K NMR14 33ohm 1 2 3 4 5 6 7 8 9 10


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PDF 1SS294 M24C32 22uF/16V 30MHz VDD25 VDD33 IDED10 IDED11 IDED12 NMR14 r2533 XG4C-4031 BLM21PG600SN1 DD11 TANTAL 16V DD15 M24C32 1SS294 Bpy 43
Not Available

Abstract: No abstract text available
Text: TO SHIBA TO SHIBA DIODE 1SS294 LO W VOLTAGE HIGH SPEED SW ITCHING. 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2 . 5 - 0 .3 + 0.25 1 .5 - 0 .1 5 · · · Low Forward Voltage : Vp (3 ) = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage , CURRENT IR (A) REVERSE VOLTAGE 1SS294


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PDF 1SS294 SS294 SC-59 O-236MOD SC-59
XJ8C-0311

Abstract: R3012 R2533 XG8W-0231 1SS294 TANTAL R DD10 DPC 31 DD12 M24C32-WBN6
Text: 5 4 3 SCL 3.3V 3.3V DPC R2 10k R1 10k 10k DPC U2 8 7 6 5 JP5 D JP1 XG8W-0231 2 R3 + + R6 1K 1 1 JP2 XJ8C-0311 3 2 1 3.3V 2 1 2 3 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 D 3.3V M24C32-WBN6 R33 10k XJ8C-0311 CP1 D1 1SS294 0.1uF CMB_STATE R5 1.5k RESET JP4 10k 2 , 8 7 6 5 5.6K R20 1SS294 IDEIORB 82 IDERDY 22 IDEDAKB R22 82 R25


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PDF XG8W-0231 XJ8C-0311 M24C32-WBN6 1SS294 12pF/10pF 30MHz 22uF/16V XJ8C-0311 R3012 R2533 XG8W-0231 1SS294 TANTAL R DD10 DPC 31 DD12 M24C32-WBN6
NMR14

Abstract: TANTAL 16V BLM21PG600SN1 Tantal 22uF/16V SML-310DT M24C32-WBN6 B3F-1002 1SS294 DPC 31 SW-DIP
Text: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K C1 47 12pF , INTRQ IOCS16B DA1 10K C4 2.2uF/16V 1 2 3 4 N 1SS294 R26 10K 82 R25 17


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PDF XJ8C-0311 B3FS-1002 M24C32-WBN6 1SS294 22uF/16V B3F-1002 30MHz XG8T-1031 NMR14 TANTAL 16V BLM21PG600SN1 Tantal 22uF/16V SML-310DT M24C32-WBN6 B3F-1002 1SS294 DPC 31 SW-DIP
SMD SOT23 A9

Abstract: diode MARKING A9 transistor marking A9 Diodes smd A9 1ss294 A9 SOT-23 smd diode a9 smd A9 st 2901 marking a9 1SS294
Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF(3) = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5 0.55 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM Maximum(Peak) Reverse


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PDF 1SS294 OT-23 SMD SOT23 A9 diode MARKING A9 transistor marking A9 Diodes smd A9 1ss294 A9 SOT-23 smd diode a9 smd A9 st 2901 marking a9 1SS294
Not Available

Abstract: No abstract text available
Text: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF(3) = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5 0.55 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM Maximum(Peak) Reverse


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PDF 1SS294 OT-23
1SS281

Abstract: 1ss237 1SS283 1SS246 1SS285 1SS282 1SS276 1SS271 HSR276 HSK151
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


OCR Scan
PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm88wk 1SS281 1SS283 1SS285 1SS282 1SS276 1SS271 HSR276 HSK151
iss319

Abstract: 1SS283 1SS281 1SS237 HSM88WA 1SS246 HSR2 HSR276 iSS295 1SS286
Text: 368D 1ss294 ss 45 40 300 100 2 1 0. 4 5 40 50 0 10 610A 1ss295 SS 4 30 20 0. 5 50 0. 5


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PDF 1ss237 855MHz) 1SS239 800MHz) 1SSZ42 1SS246 1SS271 800MHz hsm107s iss319 1SS283 1SS281 HSM88WA HSR2 HSR276 iSS295 1SS286
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