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Toshiba America Electronic Components
1SS226TE85LF Diode Switching 85V 0.1A 3-Pin S-Mini T/R - Tape and Reel (Alt: 1SS226TE85LF)
1SS226TE85LF ECAD Model
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1SS226(TE85L,F) datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
1SS226TE85LF 1SS226TE85LF ECAD Model Toshiba 1SS226TE85LF - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original PDF

1SS226(TE85L,F) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
schematic diagram TCON lcd samsung

Abstract: T-CON BOARD samsung schematic diagram tcon samsung C319B samsung nc110 samsung T-CON Schematic T-CON Schematic samsung samsung nc108 T-CON LCD cs5845
Text: No file text available


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PDF 80PORT SW950 SW955 SW954 SW953 41-C4 PGB1010603NR schematic diagram TCON lcd samsung T-CON BOARD samsung schematic diagram tcon samsung C319B samsung nc110 samsung T-CON Schematic T-CON Schematic samsung samsung nc108 T-CON LCD cs5845
schematic diagram TCON lcd samsung

Abstract: C319B T-CON BOARD samsung schematic diagram tcon samsung samsung nc110 samsung nc108 T-CON Schematic samsung samsung T-CON Schematic T-CON BOARD samsung pin r7202m
Text: No file text available


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PDF 80PORT PGB1010603NR TP14297 CONN-20P-FPC SW950 SW955 SW954 SW953 41-C4 schematic diagram TCON lcd samsung C319B T-CON BOARD samsung schematic diagram tcon samsung samsung nc110 samsung nc108 T-CON Schematic samsung samsung T-CON Schematic T-CON BOARD samsung pin r7202m
2012 - 1SS226 MARKING C3

Abstract: No abstract text available
Text: ® 1SS226 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  Dual , . Revision: April, 2012 www.wontop.com 1 ® 1SS226 WON-TOP ELECTRONICS Electrical , ® 1SS226 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) C3 C3 , . Revision: April, 2012 www.wontop.com 3 ® 1SS226 WON-TOP ELECTRONICS ORDERING INFORMATION Product No. 1SS226 -T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel


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PDF 1SS226 OT-23, MIL-STD-202, 1SS226 MARKING C3
marking C3 sot-23

Abstract: diode marking code C3 sot23 SOT-23 marking C3 c3 sot-23 code c3 sot-23 1SS226 sot-23 marking code pd 1SS226 c3 marking code c3 sot 23 1SS226 MARKING C3
Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS226 FEATURES Pb Lead-free Fast switching. Power dissipation. PD:150mW(Tamb=25) APPLICATIONS High speed switching application. SOT-23 ORDERING INFORMATION Type No. Marking 1SS226 Package , switching diode Production specification 1SS226 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise , Production specification Surface mount switching diode 1SS226 PACKAGE OUTLINE Plastic surface


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PDF 1SS226 150mW OT-23 BL/SSSDC007 1SS196 marking C3 sot-23 diode marking code C3 sot23 SOT-23 marking C3 c3 sot-23 code c3 sot-23 1SS226 sot-23 marking code pd 1SS226 c3 marking code c3 sot 23 1SS226 MARKING C3
1SS226

Abstract: No abstract text available
Text: 1SS226 1SS226 : : : : : mm SC-59 VF = 0.9V () trr = 1.6ns () CT = 0.9pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1G VR 80 V IFM , ) (//) ( /) () () *: 70% 1 2007-11-01 1SS226 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS226 1. (trr) 3 2007-11-01 1SS226 ·


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PDF 1SS226 SC-59 236MOD 100mA 1SS226
2009 - marking C3 sot-23

Abstract: marking C3 Diode Marking C3 1SS226 MARKING C3
Text: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. A A1 b c D E E1 e e1 L 0.90 1.15 0.00 0.10 0.30 0.50 0.08 , Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS226 Units V V mA mA A mW 85 80 300 100 2 150 125 -55 , -2009, KSYR11 RATING AND CHARACTERISTIC CURVES 1SS226 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Fig.5 Reverse Recovery Time (trr) test circuit Device Marking : Device P/N 1SS226


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PDF 1SS226 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA May-2009, KSYR11 marking C3 sot-23 marking C3 Diode Marking C3 1SS226 MARKING C3
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. 1SS226 1SS226 + 0.5 2.5 -0.3 + 0.25 1.5-0.15 Unit in mm Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : V jt( 3 ) = 0.9V (Typ.) : tj* ^ 1.6ns (Typ.) ; CVf1-0,9pF (Typ,) -ES do o 2 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage , TOSHIBA Sem iconductor Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS226 ip - vf


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PDF 1SS226 SC-59 O-236LTAGE 961001EAA2'
1SS226

Abstract: No abstract text available
Text: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 2000-09-11 1/2 1SS226


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PDF 1SS226 SC-59 961001EAA2' 1SS226
2010 - marking C3 sot-23

Abstract: No abstract text available
Text: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , IO IFSM PD TJ TSTG 1SS226 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS226 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , .5 Reverse Recovery Time (trr) test circuit Device Marking : Device P/N 1SS226 Marking C3 Equivalent


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PDF 1SS226 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA Jul-2010, KSYR11 marking C3 sot-23
2010 - 1SS226 MARKING C3

Abstract: 1SS226 J-STD-020D marking C3 sot-23
Text: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 , otherwise specified Characteristic Symbol 1SS226 Units Non-Repetitive Peak Reverse Voltage , . 2, Oct-2010, KSYR11 RATING AND CHARACTERISTIC CURVES 1SS226 Fig.1 Typical Forward , Marking : Device P/N 1SS226 Marking C3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS226 Important Notice and Disclaimer LSC reserves the right to make changes to this document and


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PDF 1SS226 OT-23 OT-23 J-STD-020D 2002/95/EC 1SS226 MARKING C3 1SS226 J-STD-020D marking C3 sot-23
2SK147

Abstract: 2SC3281 2SA1302 2SC3280 2SA1301 2SK389 2SC2240 2sk405 2sj115 2SC3182N 2SJ109 2SK405 2SA970
Text: BL × 2 47 1SS226 × 2 1SS193 910 910 2SC2240 - BL 61 ,+) I = N , µF 1SS226 ×2 2SA970 × 2 4.7 µF 470 +VCC 270 pF 390 27 k (0.5 W) 2SA970 110 47 µF 110 680 2SA1145 0.02 (2 W) 0.02 (2 W) 1SS226 × 2 2 k 2.4


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PDF 2SK147 2SC2240 2SC2240 2SA970 1SS226 1SS193 2SA950 2SK147 2SC3281 2SA1302 2SC3280 2SA1301 2SK389 2sk405 2sj115 2SC3182N 2SJ109 2SK405
2001 - 1SS226

Abstract: No abstract text available
Text: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ , 1 2001-06-07 1SS226 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS226 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 1SS226 SC-59 1SS226
Not Available

Abstract: No abstract text available
Text: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward


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PDF 1SS226 SC-59 236MOD 100mA
2007 - Not Available

Abstract: No abstract text available
Text: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Ultra High Speed Switching Application z Small package z Low forward voltage z Small total capacitance : SC-59 : VF (3) = 0.9V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum , 1 2007-11-01 1SS226 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS226 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without


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PDF 1SS226 SC-59
2001 - 1SS226

Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
Text: 1SS226 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS226 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum , 1 2001-06-07 1SS226 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS226 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the


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PDF 1SS226 SC-59 1SS226 TOSHIBA "ULTRA HIGH SPEED" DIODE
2002 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS226 · · Features Low Current Leakage. Surface Mount SOT-23 Package 150mW SWITCHING DIODE SOT-23 A D . · · · Maximum Ratings Operating Temperature: -55°C to +125°C Storage Temperature: -55°C to +150 °C 150mW Power dissipation. C B F E Maximum Ratings Reverse , =0.1IR .037 .950 .037 .950 Revision: 4 www.mccsemi.com 2004/11/26 1SS226 MCC Micro Commercial


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PDF 1SS226 OT-23 150mW OT-23 100mA 300mA 600mV
toshiba pro

Abstract: No abstract text available
Text: TO SHIBA TO SHIBA DIODE 1SS226 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 1SS226 SILICON EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2 . 5 - 0.3 · · · · Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp (3) = 0.9V (Typ.) : trr= 1.6ns (Typ.) : CT = 0.9pF (Typ.) + 0.25 1 .5 - 0 .1 5 2 -ES M A X IM U M RATINGS (Ta = 25°C) 00 , ility H a n d b o o k . 1997 - 05-07 1/2 TO SHIBA 1SS226 If - V f IR - V r REVERSE


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PDF 1SS226 SC-59 toshiba pro
Not Available

Abstract: No abstract text available
Text: 1SS226 SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts Power 150 mW FEATURES • Ultra high speed • Low Forward Voltage • Small total capacitance • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free , -REV.00 PAGE . 1 1SS226 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) PARAMETER SYMBOL , 1 1.2 VF, Forward Voltage (V) Fig.4 Typical Forward Characteristics PAGE . 2 1SS226


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PDF 1SS226 2002/95/EC IEC61249 OT-23, MIL-STD-750, OT-23 2012-REV
2006 - marking c3

Abstract: 1SS226 marking C3 sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 1SS226 SWITCHING DIODE FEATURES Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) MARKING: C3 Maximum Ratings ,Single Diode @TA=25 Parameter Symbol Limits Unit Non-Repetitive Peak reverse , recovery time Typical Characteristics 1SS226 Jiangsu Changjiang Electronics Technology


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PDF OT-23 1SS226 100uA 100mA marking c3 1SS226 marking C3 sot-23
1SS226

Abstract: No abstract text available
Text: 1SS226 SILICON EPITAXIAL PLANAR DIODE 3 Features · Small package · Low forward voltage · Fast reverse recovery time · Small total capacitance 1 2 Marking Code: FC SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 , 1SS226 SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company


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PDF 1SS226 OT-23 100mA 1SS226
2002 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS226 · · Features Low Current Leakage. Surface Mount SOT-23 Package 150mW SWITCHING DIODE SOT-23 A D . · · · Maximum Ratings Operating Temperature: -55°C to +150 °C Storage Temperature: -55°C to +150 °C 150mW Power dissipation. C B F E Maximum Ratings Reverse , =0.1IR .037 .950 .037 .950 Revision: 4 www.mccsemi.com 2004/11/26 1SS226 MCC Micro Commercial


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PDF 1SS226 OT-23 150mW OT-23 100mA 300mA 600mV
2001 - top marking c3 sot23

Abstract: marking C3 sot-23 1SS226 c3 1SS193 1SS184 F3 SOT-23 DIODE MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 1SS181
Text: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/ 1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/ 1SS226 Maximum Ratings (TJ , 1SS190 E3 3 2 1SS193 F3 3 1 1SS196 G3 3 2 1SS226 C3 3 1 2


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PDF 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 OT-23 OT-23, MIL-STD-202, OT-23 100mA 1SS181 1SS184 1SS187 top marking c3 sot23 marking C3 sot-23 1SS226 c3 1SS193 1SS184 F3 SOT-23 DIODE MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 1SS181
marking C3

Abstract: 1SS226 MARKING C3
Text: 1SS226 Switching Diodes SOT-23 Features Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) MARKING: C3 Maximum Ratings ,Single Diode @TA=25 Parameter Non-Repetitive Peak reverse voltage Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRM VRRM VRWM VR IFM , recovery time 1SS226 Switching Diodes Typical Characteristics -


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PDF 1SS226 OT-23 100uA 100mA marking C3 1SS226 MARKING C3
2006 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS226 Features · · Low Current Leakage. Surface Mount SOT-23 Package x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability 150mW SWITCHING DIODE SOT-23 A D Maximum Ratings · · · Operating Temperature: -55°C to +125°C Storage Temperature: -55°C to +150 °C 150mW , Revision: 5 www.mccsemi.com 1 of 3 2006/09/21 1SS226 MCC Micro Commercial Components TM


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PDF 1SS226 OT-23 150mW OT-23 100mA 300mA
Not Available

Abstract: No abstract text available
Text: 1SS226 TO SHIBA 1SS226 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.5 2 . 5 - 0.3 : SC-59 : Vp (3) = 0.9V (Typ.) : trr= 1.6ns (Typ.) : CT = 0.9pF (Typ.) + 0.25 1 .5 - 0 .1 5 2 -ES M A X IM U M , e lia b ility H a n d b o o k . 1997 - 05-07 1/2 1SS226 TO SHIBA If - V f IR - V r


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PDF 1SS226 SC-59
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