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1SS187,LF Toshiba America Electronic Components Switching Diodes
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1SS187 datasheet (19)

Part Manufacturer Description Type PDF
1SS187 EIC Semiconductor High Speed Switching Diodes Original PDF
1SS187 Galaxy Semi-Conductor Holdings Surface mount switching diode Original PDF
1SS187 Kexin Ultra High Speed Switching Application Original PDF
1SS187 Shenzhen Yongerjia Electronic Switching Diode Original PDF
1SS187 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1D) Original PDF
1SS187 Toshiba Japanese - Diodes Original PDF
1SS187 Transys Electronics Plastic-Encapsulated Diodes Original PDF
1SS187 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
1SS187 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS187 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS187 Toshiba Toshiba Shortform Catalog Scan PDF
1SS187 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
1SS187T5LFT Toshiba 1SS187 - DIODE ULTRA HS 85V 100MA SC-59 Original PDF
1SS187T5LT Toshiba 1SS187T5LT - Diode Switching 85V 0.1A 3-Pin S-Mini Original PDF
1SS187TE85L Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS187TE85L2 Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS187(TE85L,F) Toshiba 1SS187 - Diode Switching 85V 0.1A 3-Pin S-Mini T/R Original PDF
1SS187TE85R Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
1SS187TE85R2 Toshiba 1SS187 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

1SS187 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS187

Abstract: No abstract text available
Text: 1SS187 1SS187 : : : : : mm SC-59 VF = 0.92V () trr = 1.6ns () CT = 2.2pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1D VR 80 V IFM , ) (//) ( /) () () 1 2007-11-01 1SS187 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS187 1. (trr) 3 2007-11-01 1SS187 ·


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PDF 1SS187 SC-59 236MOD 100mA 1SS187
2001 - 1SS187

Abstract: No abstract text available
Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum , V µA Marking 1 2001-06-07 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS187 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually


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PDF 1SS187 SC-59 1SS187
2012 - Not Available

Abstract: No abstract text available
Text: Product No. 1SS187-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel , € suffix to part number above. For example, 1SS187-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS187 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High , . Revision: April, 2012 www.wontop.com 1 ® 1SS187 WON-TOP ELECTRONICS Electrical , ® 1SS187 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) D3 D3


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PDF 1SS187 OT-23, MIL-STD-202,
2010 - Not Available

Abstract: No abstract text available
Text: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , @t=10ms Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS187 Units V V mA mA A mW 85 80 300 100 2 150 125 , -2010, KSYR07 RATING AND CHARACTERISTIC CURVES 1SS187 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Device Marking : Device P/N 1SS187 Marking D3 Equivalent Circuit Diagram Lite-On


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PDF 1SS187 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA Jul-2010, KSYR07
2001 - top marking c3 sot23

Abstract: marking C3 sot-23 1SS226 c3 1SS193 1SS184 F3 SOT-23 DIODE MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 1SS181
Text: 1SS181/1SS184/ 1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181/1SS184/ 1SS187 1SS190/1SS193/1SS196/1SS226 Maximum Ratings (TJ , Eqivalent Circuit diagram 1 2 1 2 1SS181 A3 3 1SS184 B3 3 1SS187 D3 3 1


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PDF 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 OT-23 OT-23, MIL-STD-202, OT-23 100mA 1SS181 1SS184 1SS187 top marking c3 sot23 marking C3 sot-23 1SS226 c3 1SS193 1SS184 F3 SOT-23 DIODE MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 1SS181
sot-23 DIODE marking code D3

Abstract: Marking Code D3 1SS187 DIODE marking code D3 sot-23 marking code
Text: 1SS187 SILICON EPITAXIAL PLANAR DIODE Features · Small package · Low forward voltage · Fast reverse recovery time · Small total capacitance 3 1 2 Marking Code: D3 SOT-23 Plastic Package Applications · Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/01/2008 1SS187 SEMTECH


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PDF 1SS187 OT-23 sot-23 DIODE marking code D3 Marking Code D3 1SS187 DIODE marking code D3 sot-23 marking code
sot-23 DIODE marking code D3

Abstract: 1SS187 sot 23-5 marking code 0-37G d3 sot23
Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS187 , INFORMATION Type No. Marking 1SS187 Package Code D3 SOT-23 MAXIMUM RATING @ Ta=25 unless , switching diode Production specification 1SS187 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise , Production specification Surface mount switching diode 1SS187 PACKAGE OUTLINE Plastic surface , SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 1SS187 SOT


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PDF 1SS187 OT-23 BL/SSSDC003 sot-23 DIODE marking code D3 1SS187 sot 23-5 marking code 0-37G d3 sot23
2010 - 1SS187

Abstract: J-STD-020D
Text: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 , otherwise specified Characteristic Symbol 1SS187 Units Non-Repetitive Peak Reverse Voltage , nS REV. 3, Oct-2010, KSYR07 RATING AND CHARACTERISTIC CURVES 1SS187 Fig.1 Typical Forward , .4 Reverse Recovery Time vs. Forward Current Device Marking : Device P/N 1SS187 Marking D3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS187 Important Notice and Disclaimer LSC


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PDF 1SS187 OT-23 OT-23 J-STD-020D 2002/95/EC 1SS187 J-STD-020D
2009 - Not Available

Abstract: No abstract text available
Text: 1SS187 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , VR IFM IO IFSM PD TJ TSTG 1SS187 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS187 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , Marking : Device P/N 1SS187 Marking D3 Equivalent Circuit Diagram Lite-On Semiconductor


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PDF 1SS187 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA May-2009, KSYR07
1SS187

Abstract: TO-236MOD
Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , . 2000-09-13 1/2 1SS187 Fig.1 Reverse recovery time (trr) test circuit 961001EAA2' · The


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PDF 1SS187 SC-59 961001EAA2' 1SS187 TO-236MOD
2009 - 1SS187

Abstract: No abstract text available
Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse , 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS187 RESTRICTIONS ON


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PDF 1SS187 SC-59 1SS187
2001 - 1SS187

Abstract: No abstract text available
Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ , V mA Marking 1 2001-06-07 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS187 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually


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PDF 1SS187 SC-59 1SS187
2007 - 1SS187

Abstract: No abstract text available
Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Absolute , 1 2007-11-01 1SS187 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS187 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained herein is


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PDF 1SS187 SC-59 1SS187
1SS187

Abstract: DIODE ED 16
Text: TOSHIBA 1SS187 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS187 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) Ijr = 1mA — 0.61 — V VF (2) IF = 10mA — 0.74 — VF (3) IF = 100mA — 0.92 1.20 Reverse Current !R(1) VR = 30V — — 0.1 juA Vr = 80 V — â , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS187 If - VF ir - vr < fa 100m 10m lm 100/u 10 p


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PDF 1SS187 100mA 961001EAA2 961001EAA2' 1SS187 DIODE ED 16
1SS187

Abstract: No abstract text available
Text: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:D3 ELECTRICAL CHARACTERISTICS o (Ta , . Http:// www.wej.cn f=1MHz V E-mail:wej@yongerjia.com A 1SS187 Typical


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PDF 1SS187 OT-23 OT-23 100mA
Not Available

Abstract: No abstract text available
Text: 1SS187 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS187 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current


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PDF 1SS187 SC-59 O-236MOD 100mA
1SS187

Abstract: No abstract text available
Text: 1SS187 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:D3 ELECTRICAL CHARACTERISTICS o (Ta , 1SS187 Typical Characteristics IF - VF IR - VR 10 1 REVERSE CURRENT I R (A) FORWARD


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PDF 1SS187 OT-23 OT-23 100mA 1SS187
2007 - 1SS187

Abstract: Marking Code D3 sot-23 DIODE marking code D3 SOT23 DIODE marking CODE AV
Text: Certificate TH97/10561QM 1SS187 SILICON EPITAXIAL PLANAR DIODE SOT-23 PRV : 85 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small package Low forward voltage Fast reverse recovery time Small total capacitance Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * * Certificate TW00/17276EM 1.02 0.89 2.04 1.78 3 , TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES( 1SS187 ) FIG.1 -


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PDF TH97/10561QM 1SS187 OT-23 TW00/17276EM OT-23 1SS187 Marking Code D3 sot-23 DIODE marking code D3 SOT23 DIODE marking CODE AV
marking d3

Abstract: No abstract text available
Text: 1SS187 Switching Diodes SOT-23 1. CATHODE 2. N.C. 3. ANODE Features Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: D3 Maximum Ratings @TA=25 Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Symbol VRM VR IFM IO PD TJ TSTG Dimensions in inches and (millimeters) Limits 85 80 300 100 150 125 -55-125 Unit V V mA mA mW , =1mA IF=10mA IF=100mA VR=30V VR=80V VR=0,f=1MHz IF=IR=10mA,Irr=0.1×IR Conditions 1SS187 Switching


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PDF 1SS187 OT-23 100mA marking d3
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: D3· 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage VRM 85 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM , =0.1×IR A,Jun,2011 Typical Characteristics Forward 100 Characteristics 1SS187 Reverse 1000


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PDF OT-23 1SS187 OT-23
1SS187

Abstract: marking MI
Text: SILICON EPITAXIAL PLANAR TYPE 1SS187 U n i t in m m ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES : . Small Package . Low Forward Voltage . Fast Reverse Recovery Time . Small Total C apacitance : SOT-23MOD : Vp = 0 .9 2 V ( T y p .) f-Q5 2 . 5 - 0.3 : trr-l 6 n s (Typ.) : CT" 2 . 2 p F ( T y p . ) MAXIMUM RATINGS (Ta=25°C) SYMBOL V RM VR ÎFM io IFSM p TJ Rang e T st g RATING 85 80 , pF ns Ip=10mA, B_ D] 3 "B ET 1125 1SS187 ir - vr c T - V R t rr -


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PDF 1SS187 OT-23MOD 1SS187 marking MI
Not Available

Abstract: No abstract text available
Text: 1SS187 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 1 87 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp (3) = 0.92V (Typ.) : trr= 1.6ns (Typ.) : CT = 2.2pF (Typ.) M A X IM U M RATINGS (Ta = 25 , u cto r R e lia b ility H a n d b o o k . 1997 - 05-07 1/2 TO SHIBA 1SS187 If -


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PDF 1SS187 SC-59
2004 - Not Available

Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW(Tamb=25℃) Forward Current 100 m A IF: Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 4 2. 9 2. 4 1. 3 0. 95 150 1. 9 PD : 0. 95 TJ,Tstg: -55℃ to +150℃ Unit : mm M ki ng D ar 3 ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter conditions MIN MAX UNIT IR= 100µA IR VR=80V 0.5 µA voltage VF


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PDF OT-23 1SS187 OT-23 100mA
TO-236MOD

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS187 1SS18 7 ULTRA HIGH SPEED SW ITCHING APPLICATIO N. + 0.5 2 .5 - 0 . 3 Unit in mm ,1 .5 - 0.15 + 0.25 Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vjr (3) = 0.92V (Typ.) : tj* ^ i.öns (Typ.) ; CVf1-2,2pF (Typ,) -e p ö o +I CHARACTERISTIC Maximum (Peak) Reverse Voltage , n d b o o k . 1997 - 05-07 1/2 TOSHIBA 1SS187 ip - v f IR - Vr REVERSE


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PDF 1SS187 1SS18 SC-59 O-236MOD SC-59 TO-236MOD
2004 - 1SS187

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS187 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW(Tamb=25) Forward Current 100 m A IF: Reverse Voltage 80 V VR: Operating and storage junction temperature range 0. 4 2. 9 2. 4 1. 3 0. 95 150 1. 9 PD : 0. 95 TJ,Tstg: -55 to +150 Unit : mm M ki ng D ar 3 ELECTRICAL CHARACTERISTICS(Tamb=25 Parameter conditions MIN MAX UNIT IR


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PDF OT-23 1SS187 OT-23 100mA specifi87 1SS187
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