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1SS181-TP Micro Commercial Components Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-3
1SS181,LF Toshiba America Electronic Components DIODE ARRAY GP 80V 100MA SC59
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1SS181 Toshiba Corporation Bristol Electronics 1,000 - -
1SS181,LF Toshiba America Electronic Components Avnet 12,000 $0.02 $0.02
1SS181,LF Toshiba America Electronic Components Chip1Stop 488 $0.05 $0.05
1SS181,LF(B Toshiba America Electronic Components Chip1Stop 3,000 $0.08 $0.03
1SS181,LF(T Toshiba America Electronic Components Chip1Stop 2,600 $0.14 $0.12
1SS181(F) Toshiba America Electronic Components RS Components 3,125 £0.08 £0.03
1SS181(TE85L,F) Toshiba America Electronic Components Avnet - - -
1SS181(TE85L) Toshiba Corporation Bristol Electronics 9,000 - -
1SS181S,LF Toshiba America Electronic Components Avnet - - -
1SS181T5LFT Toshiba America Electronic Components ComS.I.T. 6,000 - -
1SS181TE85L Toshiba Corporation Bristol Electronics 11,998 - -
1SS181TE85LND Toshiba America Electronic Components ComS.I.T. 3,000 - -

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1SS181 datasheet (25)

Part Manufacturer Description Type PDF
1SS181 EIC Semiconductor High Speed Switching Diodes Original PDF
1SS181 Galaxy Semi-Conductor Holdings Surface mount switching diode Original PDF
1SS181 Kexin Ultra High Speed Switching Application Original PDF
1SS181 Shenzhen Yongerjia Electronic Switching Diode Original PDF
1SS181 Toshiba Diode Silicon Epitaxial Planar Type Original PDF
1SS181 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1E) T/R Original PDF
1SS181 Toshiba Japanese - Diodes Original PDF
1SS181 Transys Electronics Plastic-Encapsulated Diodes Original PDF
1SS181 TY Semiconductor Surface Mount Switching Diode - SOT-23 Original PDF
1SS181 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS181 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS181 Toshiba Toshiba Shortform Catalog Scan PDF
1SS181 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
1SS181(F) Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3TO-236MOD Original PDF
1SS181S,LF Toshiba 1SS181S - X34 PB-F SOT-23 M8 DIODE (LF), IFM=300MA Original PDF
1SS181T5LFT Toshiba 1SS181 - Rectifiers Diode Original PDF
1SS181(T5L,M) Toshiba 1SS181 - Diode Switching 85V 0.3A 3-Pin S-Mini T/R Original PDF
1SS181(T:5LT) Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1E) T/R Original PDF
1SS181(TE85L) Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1E) T/R Original PDF
1SS181TE85L Toshiba 1SS181 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

1SS181 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1SS181

Abstract: No abstract text available
Text: 1SS181 1SS181 : : : : : mm SC-59 VF (3) = 0.92V () trr = 1.6ns () CT = 2.2pF () JEDEC JEITA (Ta = 25°C) : 0.012 g () VRM 85 V TO­236MOD SC­59 1­3G1E VR 80 V IFM , ) (//) ( /) () () *: 150% 1 2007-11-01 1SS181 (Ta = 25°C) VF (1 , ( 1) V A 2 2007-11-01 1SS181 1. (trr) 3 2007-11-01 1SS181 ·


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PDF 1SS181 SC-59 236MOD 100mA 1SS181
2010 - 1SS181

Abstract: J-STD-020D
Text: 1SS181 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere FEATURES SOT-23 · Fast Switching Speed · For general purpose switching applications , otherwise specified Characteristic Symbol 1SS181 Units Non-Repetitive Peak Reverse Voltage , Test Condition VF V uA REV. , Oct-2010, KSYR05 RATING AND CHARACTERISTIC CURVES 1SS181 , P/N 1SS181 Marking A3 Equivalent Circuit Diagram Legal Disclaimer Notice 1SS181


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PDF 1SS181 OT-23 OT-23 J-STD-020D 2002/95/EC 1SS181 J-STD-020D
2012 - 1ss181

Abstract: No abstract text available
Text: Product No. 1SS181-T1 1. 2. Package Type Shipping Quantity SOT-23 3000/Tape & Reel , € suffix to part number above. For example, 1SS181-T1-LF. WON-TOP ELECTRONICS and are registered , ® 1SS181 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  Dual , . Revision: April, 2012 www.wontop.com 1 ® 1SS181 WON-TOP ELECTRONICS Electrical , ® 1SS181 WON-TOP ELECTRONICS MARKING INFORMATION RECOMMENDED FOOTPRINT 0.035 (0.90) A3 A3


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PDF 1SS181 OT-23, MIL-STD-202, 1ss181
MARKING a3 SOT-23

Abstract: 1ss181 MARKING A3 sot23 A3 marking diode sot-23 CJ SOT23
Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS181 , INFORMATION Type No. Marking Package Code 1SS181 A3 SOT-23 MAXIMUM RATING @ Ta=25 unless , Production specification 1SS181 TYPICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Document , Surface mount switching diode 1SS181 PACKAGE OUTLINE Plastic surface mounted package SOT , : mm PACKAGE INFORMATION Device Package Shipping 1SS181 SOT-23 3000/Tape&Reel


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PDF 1SS181 OT-23 BL/SSSDC001 MARKING a3 SOT-23 1ss181 MARKING A3 sot23 A3 marking diode sot-23 CJ SOT23
2010 - A3 marking diode sot-23

Abstract: MARKING a3 SOT-23 1SS181 equivalent
Text: 1SS181 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , @t=10ms Symbol VRM VR IFM IO IFSM PD TJ TSTG 1SS181 Units V V mA mA A mW 85 80 300 100 2 150 125 , -2010, KSYR05 RATING AND CHARACTERISTIC CURVES 1SS181 Fig.1 Typical Forward Characteristics Fig.2 Typical , . Forward Current Device Marking : Device P/N 1SS181 Marking A3 Equivalent Circuit Diagram Lite-On


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PDF 1SS181 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA Jul-2010, KSYR05 A3 marking diode sot-23 MARKING a3 SOT-23 1SS181 equivalent
2001 - 1SS181

Abstract: 100MAS
Text: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (Typ.) l Fast reverse recovery time : trr = 1.6ns (Typ.) l Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse , 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS181 RESTRICTIONS ON


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PDF 1SS181 SC-59 1SS181 100MAS
2009 - Not Available

Abstract: No abstract text available
Text: 1SS181 SURFACE MOUNT FAST SWITCHING DIODE FEATURES REVERSE VOLTAGE ­ 80 Volts FORWARD CURRENT ­ 0.1 Ampere SOT-23 SOT-23 Dim. Min. Max. · Fast Switching Speed · For general purpose switching , VR IFM IO IFSM PD TJ TSTG 1SS181 Units V V mA mA A mW 85 80 300 100 2 150 125 -55~+125 , CHARACTERISTIC CURVES 1SS181 Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics Fig , Marking : Device P/N 1SS181 Marking A3 Equivalent Circuit Diagram Lite-On Semiconductor


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PDF 1SS181 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA May-2009, KSYR05
2001 - top marking c3 sot23

Abstract: marking C3 sot-23 1SS226 c3 1SS193 1SS184 F3 SOT-23 DIODE MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 1SS181
Text: 1SS181 /1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead(Pb)-Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose , 0.25 06-Sep-06 1SS181 /1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Maximum Ratings (TJ , Eqivalent Circuit diagram 1 2 1 2 1SS181 A3 3 1SS184 B3 3 1SS187 D3 3 1


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PDF 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 OT-23 OT-23, MIL-STD-202, OT-23 100mA 1SS181 1SS184 1SS187 top marking c3 sot23 marking C3 sot-23 1SS226 c3 1SS193 1SS184 F3 SOT-23 DIODE MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 1SS181
Not Available

Abstract: No abstract text available
Text: z charge Small total capacitance : CT = 2.2pF (typ.) * Low stored 1SS181 SOD-323(SC-76) .012 , -76) * Terminal : Solder plated, solderable per MIL-STD-750, Driver Marking 1SS181 = A3 Method 2026 , .049 (1.25) max. CATHODE 1 C C WILLAS 1SS181 Electrical characteristic curves 10 Ta=100 1 , Fig.5 Reverse recovery time (trr) test circuit WILLAS 1SS181 SOT-23 NOTES: A L 3 1 V G 2 B S


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PDF 1SS181 OD-323 SC-76) 1SS181 OT-23
2007 - 1SS181

Abstract: No abstract text available
Text: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Absolute , Reverse current Test Condition Unit V A Marking 1 2007-11-01 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS181 RESTRICTIONS ON PRODUCT USE


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PDF 1SS181 SC-59 1SS181
2001 - 1SS181

Abstract: robotics 100MAS
Text: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2001-06-07 1SS181 RESTRICTIONS ON


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PDF 1SS181 SC-59 1SS181 robotics 100MAS
1SS181

Abstract: No abstract text available
Text: TOSHIBA 1SS181 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS181 ULTRA HIGH SPEED SWITCHING APPLICATION. • Small Package : SC-59 • Low Forward Voltage : Vp (3) = 0.92V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) • Small Total Capacitance : Ct = 2.2PF (Typ.) MAXIMUM RATINGS (Ta = 25°C) (*) Unit Rating. Total Rating = Unit RatingXl.5. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit , Reliability Handbook. 1997-05-07 1/2 TOSHIBA 1SS181 If - VF ir - vr < fa 100m 10m lm 100/u 10 p


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PDF 1SS181 SC-59 961001EAA2' 1SS181
1SS181

Abstract: 100MAS 961001EAA2
Text: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage , the TOSHIBA Semiconductor Reliability Handbook. 2000-09-13 1/2 1SS181 Fig.1 Reverse


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PDF 1SS181 SC-59 961001EAA2' 1SS181 100MAS 961001EAA2
4558 dd

Abstract: 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
Text: F5/F6 Type No. 1 1 öS Max. Rating V r(V) IO(mA) P(mW)* SMV/SM6 USVAJS6 Structure Connection Mark SMV/SM6 USV/US8 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 E u Q , A2 HN1D02F HN1D02FU 80 100 300 200 1SS184X2 A3 HN1D03F HN1D03FU 80 100 300 200 1SS181 + 1SS184 a A4 HN2D01F HN2D01FU 80 80 300


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PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 TA75S393 LM358 LM393 4558 4558 8 PIN 4558 L
Not Available

Abstract: No abstract text available
Text: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF (3) = 0.92V (Typ.) l Fast reverse recovery time : trr = 1.6ns (Typ.) l Small total capacitance : CT = 2.2pF (Typ.) Maximum Ratings (Ta = 25°C) ° Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward


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PDF 1SS181 SC-59 O-236MOD 100mAs
2009 - 1SS181

Abstract: No abstract text available
Text: 1SS181 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS181 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.92V (Typ.) Fast reverse recovery time : trr = 1.6ns (Typ.) Small total capacitance : CT = 2.2pF (Typ.) Absolute , Reverse current Test Condition Unit V A Marking 1 2007-11-01 1SS181 Fig.1 Reverse recovery time (trr) test circuit 2 2007-11-01 1SS181 RESTRICTIONS ON PRODUCT USE ·


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PDF 1SS181 SC-59 1SS181
marking CODE A3

Abstract: 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features Small package 1. CATHODE 2. CATHODE Low forward voltage Fast reverse recovery time 3. ANODE Small total capacitance Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM , Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 31/08/2005 1SS181 SEMTECH ELECTRONICS


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PDF 1SS181 OT-23 100mA marking CODE A3 1SS181 code a3 sot 724 1SS181 a3 sot 23 "marking code A3"
Not Available

Abstract: No abstract text available
Text: SMD Type Product specification 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns(Typ.) 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 ■Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 3 2.Emitter +0.1 , ://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification 1SS181


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PDF 1SS181 OT-23 100mA
1SS181

Abstract: No abstract text available
Text: 1SS181 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:A3 ELECTRICAL CHARACTERISTICS o (Ta , 1SS181 Typical Characteristics IF - VF REVERSE CURRENT I R (A) FORWARD CYRRENT I F (A) 100m


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PDF 1SS181 OT-23 OT-23 100mA 1SS181
Not Available

Abstract: No abstract text available
Text: Diodes SMD Type Surface mount switching diode 1SS181 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Fast reverse recovery time :trr=1.6ns(Typ.) 1 ● Small total capacitance :CT=2.2pF(Typ.) 0.55 ● Low forward voltage. :VF(3)=0.92V(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 ■Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 3 2 , www.kexin.com.cn 1 Diodes SMD Type 1SS181 www.kexin.com.cn 2 Kexin


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PDF 1SS181 OT-23 100mA
2006 - 1SS181

Abstract: SOT23 DIODE marking CODE AV marking CODE A3
Text: Certificate TH97/10561QM 1SS181 SILICON EPITAXIAL PLANAR DIODE SOT-23 PRV : 85 Volts Io : 100 mA 0.100 0.013 1.40 0.95 0.50 0.35 Small package Low forward voltage Fast reverse recovery time Small total capacitance Ultra high speed switching application Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 3.10 2.70 0.19 0.08 FEATURES : * * * * * * Certificate TW00 , CURVES ( 1SS181 ) FIG.1 - FORWARD CURRENT VS. FIG.2 - REVERSE CURRENT VS. FORWARD VOLTAGE


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PDF TH97/10561QM 1SS181 OT-23 TW00/17276EM OT-23 1SS181 SOT23 DIODE marking CODE AV marking CODE A3
Not Available

Abstract: No abstract text available
Text: 1SS181 Switching Diodes SOT-23 1. CATHODE 2. CATHODE 3. ANODE Features Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: A3 Maximum Ratings @TA=25 Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Symbol VRM VR IFM IO PD TJ TSTG Dimensions in inches and (millimeters) Limits 85 80 300 100 150 125 -55-125 Unit V V mA mA mW , =1mA IF=10mA IF=100mA VR=30V VR=80V VR=0,f=1MHz IF=IR=10mA,Irr=0.1×IR Conditions 1SS181 Switching


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PDF 1SS181 OT-23 100mA
a1 sot-23

Abstract: "MARKING CODE A1" 1SS181 marking codes transistors a1 sot-23 marking code A1 marking 724 diode sot-23 marking code A1 SOT 23
Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features · Small package · Low forward voltage · Fast reverse recovery time · Small total capacitance 3 1 2 Marking Code: A1 SOT-23 Plastic Package Applications · Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 1SS181 SEMTECH


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PDF 1SS181 OT-23 a1 sot-23 "MARKING CODE A1" 1SS181 marking codes transistors a1 sot-23 marking code A1 marking 724 diode sot-23 marking code A1 SOT 23
1SS181

Abstract: No abstract text available
Text: 1SS181 SILICON EPITAXIAL PLANAR DIODE Features 3 · Small package · Low forward voltage · Fast reverse recovery time · Small total capacitance 1 2 Marking Code: A3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 85 , on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 19/10/2005 1SS181 SEMTECH


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PDF 1SS181 OT-23 100mA 1SS181
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES Low forward voltage Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 85 V DC Blocking Voltage VR 80 V Forward Continuous Current , =0.1×IR A,May,2011 Typical Characteristics Forward 100 Characteristics 1SS181 Reverse 1000


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PDF OT-23 1SS181 OT-23
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