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1SS154(TE85L,F) Toshiba America Electronic Components Chip1Stop 3,130 $1.41 $1.05

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1SS154 datasheet (10)

Part Manufacturer Description Type PDF
1SS154 Kexin UHF S Band Mixer / Detector Applications Original PDF
1SS154 Toshiba DIODE SCHOTTKY DIODE 6V 0.03A 3(1-3G1A) Original PDF
1SS154 TY Semiconductor UHF S Band Mixer / Detector Applications - SOT-23 Original PDF
1SS154 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1SS154 Others High Frequency Device Data Book (Japanese) Scan PDF
1SS154 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1SS154 Toshiba DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Scan PDF
1SS154 Toshiba Schottky barrier diode for UHF-S band mixer/detector applications Scan PDF
1SS154TE85L Toshiba 1SS154 - DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
1SS154TE85R Toshiba 1SS154 - DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode Original PDF

1SS154 Datasheets Context Search

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1SS154

Abstract: No abstract text available
Text: 1SS154 1SS154 UHFS / : mm (Ta = 25°C) VR 6 IF 30 JEDEC JEITA V mA Tj 125 °C Tstg -30125 °C : SC­59 1­3G1A : 12 mg () (//) ( /) () () (Ta = 25 , CT VR = 0, f = 1MHz 0.8 pF 1 2007-11-01 1SS154 2 2007-11-01 1SS154 · · · · "" · · ·


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PDF 1SS154 1SS154
2003 - 1SS154

Abstract: No abstract text available
Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range JEDEC JEITA , 2003-03-24 1SS154 2 2003-03-24 1SS154 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA


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PDF 1SS154 SC-59 1SS154
2007 - Not Available

Abstract: No abstract text available
Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Small package. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 6 30 125 -30~125 Unit V mA °C °C JEDEC JEITA TOSHIBA SC-59 1-3G1A Electrical Characteristics (Ta = 25 , 1SS154 2 2003-03-24 1SS154 RESTRICTIONS ON PRODUCT USE · The information contained herein


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PDF 1SS154 SC-59
1SS154

Abstract: No abstract text available
Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range JEDEC JEITA , 2003-03-24 1SS154 2 2003-03-24 1SS154 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA


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PDF 1SS154 SC-59 1SS154
1SS154

Abstract: No abstract text available
Text: TOSHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS154 UHF-S BAND MIXER/DETECTOR APPLICATIONS Small Package. Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 6 V Forward Current if 30 mA Junction Temperature Tj 125 °C , 1MHz — 0.8 — pF Marking Type Name b a TEI-B" 1 2001-05-31 TOSHIBA 1SS154 If - VF IR - , VOLTAGE Vr (V) REVERSE VOLTAGE VR (V) 2 2001-05-31 TOSHIBA 1SS154 RESTRICTIONS ON PRODUCT USE


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PDF 1SS154 SC-59 1SS154
2009 - 1SS154

Abstract: No abstract text available
Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range , 2007-11-01 1SS154 2 2007-11-01 1SS154 RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and


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PDF 1SS154 1SS154
1SS154

Abstract: SC-59 marking 1F 1fa MARKING AI500
Text: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS154 U n i t in m m UHF-S BAND MIXER /D ET ECT OR APPLICATIONS. + 0.5 . Small Package MAXIMUM RATINGS (Ta=25°C) SYMBOL Vr If Tj Tstg RATING 6 30 125 -30-125 UNIT V mA ° C ° C Weight : 0.012g CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range J EDEC E I AJ 2 N. C 3 CATHODE - SC 59 1- 3G1A ELECTRICAL , "B B A B 1119 1SS154 1F " VF Ip (mA) c ai 500 300 1fa = 75 r 50 lu VF FORWARD


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PDF 1SS154 1SS154 SC-59 marking 1F 1fa MARKING AI500
Not Available

Abstract: No abstract text available
Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range JEDEC ― JEITA SC-59 TOSHIBA Electrical Characteristics (Ta = 25°C) Characteristics 1-3G1A


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PDF 1SS154 SC-59
1SS154

Abstract: No abstract text available
Text: TOSHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS154 UHF-S BAND MIXER/DETECTOR APPLICATIONS Small Package. MAXIMUM RATINGS (Ta = 25°C) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 6 V Forward Current if 30 mA Junction Temperature Tj 125 °C Storage Temperature Range Tstg -30-125 °C +0.5 2.5-0.3 , /2 TOSHIBA 1SS154 If - VF IR - Vr


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PDF 1SS154 SC-59 10juA 1SS154
2007 - 1SS154

Abstract: No abstract text available
Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications · Unit: mm Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg -30~125 °C Storage temperature range , 2007-11-01 1SS154 2 2007-11-01 1SS154 RESTRICTIONS ON PRODUCT USE 20070701-EN · The


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PDF 1SS154 1SS154
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE 1SS154 U nit in mm + 0.5 2 5 -0 3 U H F - S BAN D M IXER / DETECTOR APPLICATIONS. Small Package. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range SYMBOL Vr if RATING 30 125 -3 0 -1 2 5 6 Tj UNIT V mA °C Tstg °c 1. N.C. 2. ANOUK 3. CATHODE , EL^T B B A Type Name ET 1 0 5 1SS154 TOTAL C A PA CITA N C E C t FORW ARD CU


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PDF 1SS154 SC-59 10//A
Not Available

Abstract: No abstract text available
Text: TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS154 1 w êêf w êêf m wm r 5 4 m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Forward Voltage Total Capacitance SYMBOL Vr Ir VF(1) V 'R Y O 'i c T Ir < TEST CONDITION = 10^A II cn 1SS154 ip - v f IR -


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PDF 1SS154
Not Available

Abstract: No abstract text available
Text: 1SS154 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 Unit in mm U H F-S BAND M IX E R / DETECTOR APPLICATIONS +0.5 2.5-0.3 Small Package. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr if Tj Tstg RATING 6 30 125 -3 0 -1 2 5 UNIT V mA , 1SS154 TO SHIBA ip - Vf IR - V r < a E -i & H S= 0 D ü H 8 a > 05


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PDF 1SS154 SC-59
1SS154

Abstract: varicap ghz
Text: 1SS154 SPICE PARAMETER 20020226 SPICE MODEL: DATA FORMAT: SPICE SYMBOL: BERKLEY SPICE2G6 DIODE MODEL MODEL FORMAT (-) TT(s),EG(eV),XTI(-) FREQUENCY RANGE: f = 0.1 to 3 GHz VOLTAGE RANGE: Va = -5 to 0.4V AMBIENT TEMPERATURE: Ta = -40 to 85deg PARAMETER IS N BV IBV RS CJ0 VJ M FC TT EG XTI = = = = = = = = = = = = 1.26E-09 1.02 6 1.00E-04 4.1 6.90E-13 0.119 0.146 0.5 2.75E-08 0.60 4.33 VARICAP


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PDF 1SS154 85deg 26E-09 00E-04 90E-13 75E-08 00E-09 varicap ghz
smd marking BA

Abstract: transistor smd marking BA transistor smd marking BA sot-23 smd transistor marking ba smd diode marking 9 ba 1SS154
Text: Diodes SMD Type UHF~S BAND MIXER/DETECTOR APPLICATIONS 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it R e v e rs e V o lta g e VR 6 V F o rw a rd C u rre n t IF 30


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PDF 1SS154 OT-23 smd marking BA transistor smd marking BA transistor smd marking BA sot-23 smd transistor marking ba smd diode marking 9 ba 1SS154
Not Available

Abstract: No abstract text available
Text: Product specification 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it R e v e rs e V o lta g e VR 6 V F o rw a rd C u rre n t IF 30 mA J u n c tio n te m p e


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PDF 1SS154 OT-23
isv149

Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV255 ISV103 1SS239 ISV102
Text: MIX Application Type No. 1SS154 1SS239 1SS271 S3275 1SS242 1SS295 1SS315 Package S-MINI (Single


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PDF ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239
tbf819

Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
Text: 1SS193 2SC2102 1SS238 1SS312, 1SS314 2SC2182 2SK573 2SK1641 1SS239 1SS154 , 1SS271


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PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
2005 - TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
Text: [ 1 ] [ 1 ] [ 1 ] 1SS154 BA 141 1SS268 BF 143 1SS269 , 1SV252 1SV312 1SS154 Single 1SS315 JDH2S01T Mixer SBD 1SS271 Twin 1SS295 1SV229 , (MHz) [ 3 ] 6. VHF~UHF SBD VR IF *VRM (V) (mA) 1SS154 6 1SS271 , USQ 1'st IF Amp 2SC5084 MT3S03A MT3S04A 1SS154 S-MINI Bipolar transistor S-MINI JDP2S01T JDP2S02T SMQ 1SS154 (single) 1SS271 (double) 3SK199 3SK232 3SK291 Si


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 2SC386A varicap v147 2sc5066 2SK1310 3SK78 toshiba S-AV24 V101 varicap diode 1SV149
3120 tuner

Abstract: C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
Text: Attinuater, Switch PIN Single Tw in Single 1SV237 1SV128 1SV172 1SS154 1SS271 1SS295 * 1SV252 1SS239


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PDF 3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SS241 C1923 2sc low noise 1SV204 1SV226 1SS242 2SA1161 1SS239
2005 - 3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
Text: Diode Double S-MINI fSC S-MINI SSM 1SS154 JDH2S01FS 2SC5084 MT3S03A , MOSFET 1SV271 1SV307 S-MINI 1SS239 1SS154 (single) 1SS271 (double) 3SK199 3SK232 3SK291 , Amp OSC 2SC5087 2SC5092 1SS154 (single) 1SS271 (double) SSM 2SC5092 USQ


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL 3SK112 3SK78 2SC2509
k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
Text: ALPHANUMERICAL INDEX Type No. 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 1SS314 1SS315 1SS364 1SS371 1SV99 1SV101 1SV102 1SV103 1SV128 1SV147 1SV149 1SV153 1SV153A 1SV160 1SV161 1SV172 1SV186 1SV204 1SV211 1SV212 1SV214 1SV215 1SV216 Marking BA SI TY S2 BF BG BD BH BF BG TY S2 BF TY V99 V101 V102 V103 BB V147 V149 T1 T5 VI T2 BE T3 T4 T6 T8 T1 T2 T4 Page 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 138 141 143 145 148 151 153 155 157 159 161 163 165 167


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PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 C2995 K241
2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
Text: ) hand book marked * device. 1 1 · Diodes Type No. 1SS154 1SS181 1SS184 1SS187 1SS190 1SS193


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 02CZ27 transistor 737 2n4401 331
2006 - BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors Zener c9v TOSHIBA S-AV29H 3SK114
Text: ] Part Number Index [ 1 ] Part Number Index Part Number Marking Page 1SS154 BA 149 , JDP4P02U JDP4P02AT* 1SS154 Single 1SS315 JDH2S01FS* Mixer (SBD) JDH2S02FS* 1SS271 Dual , * Single VRM (V) 1SS154 Application IF 6 30 0.5 10 0.8 0 S-MINI , Part Number 1SS154 (single) 1SS271 (dual) MT4S03AU MT4S04AU MT4S100U MT4S101U *MT4S102U , USM Application 1SS154 Part Number 2SC5084 MT3S03A MT3S04A MT3S03AU MT3S03AU Type


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PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors Zener c9v TOSHIBA S-AV29H 3SK114
2005 - FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Text: No file text available


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PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
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